Photoelectronic device and image sensor
    26.
    发明授权
    Photoelectronic device and image sensor 有权
    光电器件和图像传感器

    公开(公告)号:US09070888B2

    公开(公告)日:2015-06-30

    申请号:US14044315

    申请日:2013-10-02

    Abstract: A photoelectronic device includes a first electrode, a second electrode facing the first electrode, an active layer between the first electrode and the second electrode, and an auxiliary layer between the first electrode and the active layer, the auxiliary layer including a first auxiliary layer including a metal oxide and a metal and a second auxiliary layer including a first organic material having a HOMO energy level of greater than or equal to about 6.0 eV.

    Abstract translation: 光电子器件包括第一电极,面对第一电极的第二电极,第一电极和第二电极之间的有源层,以及在第一电极和有源层之间的辅助层,辅助层包括第一辅助层,包括 金属氧化物和金属,以及包括HOMO能级大于或等于约6.0eV的第一有机材料的第二辅助层。

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