公开(公告)号：US11515325B2

公开(公告)日：2022-11-29

申请号：US17025479

申请日：2020-09-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bongsoon Lim ,  Sang-Wan Nam ,  Sang-Won Park ,  Sang-Won Shim ,  Hongsoo Jeon ,  Yonghyuk Choi

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/11573 ,  H01L23/522 ,  G11C7/18 ,  H01L27/11556 ,  H01L27/11526 ,  G11C8/14 ,  H01L27/11519

Abstract: A three-dimensional semiconductor memory device may include a peripheral circuit structure including transistors on a first substrate, and a cell array structure on the peripheral circuit structure, the cell array structure including: a first stack structure block comprising first stack structures arranged side by side in a first direction on a second substrate, a second stack structure block comprising second stack structures arranged side by side in the first direction on the second substrate, a separation structure disposed on the second substrate between the first stack structure block and the second stack structure block and comprising first mold layers and second mold layers, and a contact plug penetrating the separation structure. The cell array structure may include a first metal pad and the peripheral circuit structure may include a second metal pad. The first metal pad may be in contact with the second metal pad.

公开(公告)号：US10699782B2

公开(公告)日：2020-06-30

申请号：US16503169

申请日：2019-07-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Won Park ,  Dongkyo Shim ,  Kitae Park ,  Sang-Won Shim

IPC: G11C11/56 ,  G11C16/26 ,  G11C16/04 ,  G11C8/08 ,  G11C16/08 ,  G11C29/02 ,  G11C16/34

Abstract: A nonvolatile memory device includes a voltage generator that sequentially provides a first setup voltage and second setup voltage to a word line of a memory cell array, and control logic including a time control unit that determines a word line setup time for the word line in relation to the second setup voltage based on a difference between the first and second setup voltages.

公开(公告)号：US10395741B2

公开(公告)日：2019-08-27

申请号：US16139921

申请日：2018-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Won Park ,  Su-Chang Jeon ,  Dong-Kyo Shim

IPC: G11C16/10 ,  G11C16/04 ,  G11C16/08 ,  G11C16/26 ,  G11C16/34 ,  G11C16/24

Abstract: A nonvolatile memory device includes a cell string having a plurality of memory cells connected to one bit line. A page buffer is connected to the bit line via a sensing node and connected to the cell string via the bit line. The page buffer includes a first latch for storing bit line setup information and a second latch for storing forcing information. The first latch is configured to output the bit line setup information to the sensing node, and the second latch is configured to output the forcing information to the sensing node independently of the first latch.

公开(公告)号：US09502124B2

公开(公告)日：2016-11-22

申请号：US14322335

申请日：2014-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Won Park ,  Dongkyo Shim ,  Kitae Park ,  Sang-Won Shim

IPC: G11C16/26 ,  G11C16/04 ,  G11C8/08 ,  G11C11/56 ,  G11C16/08 ,  G11C29/02

CPC classification number: G11C11/5642 ,  G11C8/08 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/3459 ,  G11C29/021 ,  G11C29/028

Abstract: A nonvolatile memory device includes a voltage generator that sequentially provides a first setup voltage and second setup voltage to a word line of a memory cell array, and control logic including a time control unit that determines a word line setup time for the word line in relation to the second setup voltage based on a difference between the first and second setup voltages.

Abstract translation: 非易失性存储器件包括：电压发生器，其向存储单元阵列的字线依次提供第一设定电压和第二设定电压;以及控制逻辑，包括时间控制单元，所述时间控制单元确定所述字线的字线建立时间 基于所述第一和第二设定电压之间的差，将所述第二设置电压提供给所述第二设置电压。