公开(公告)号：US09785493B1

公开(公告)日：2017-10-10

申请号：US15373887

申请日：2016-12-09

申请人： SanDisk Technologies LLC

发明人： Zhengyi Zhang ,  Yingda Dong

IPC分类号： G11C16/16 ,  G06F11/07 ,  G11C16/14 ,  G11C16/10 ,  G11C16/26 ,  G11C16/34 ,  G06F3/06

CPC分类号： G11C16/3427 ,  G06F11/1048 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5642 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3431 ,  G11C16/3445 ,  G11C16/3459 ,  G11C16/3481 ,  G11C16/349 ,  G11C29/025 ,  G11C29/028 ,  G11C29/42 ,  G11C29/44 ,  G11C29/52 ,  G11C2029/0409

摘要： A memory device and associated techniques provide a read recovery of data in case of a short circuit between word lines. When cells of a recovery word line WLrec are successfully programmed but cells of an adjacent work line WLrec+1 are not successfully programmed, the data of the cells of WLrec can be recovered. The cells of WLrec+1 are erased so that a low pass voltage on WLrec+1 is adequate to provide these cells in a conductive state during the recovery read of WLrec. Capacitive coupling between the word lines which shifts the apparent threshold voltage of the cells on WLrec is reduced so that a more accurate recovery read can be performed. Read voltages on WLrec can be upshifted compared to baseline read voltages.