Photosensitive polymer and chemically amplified photoresist composition including the same
    21.
    发明授权
    Photosensitive polymer and chemically amplified photoresist composition including the same 失效
    光敏聚合物和包含其的化学放大光致抗蚀剂组合物

    公开(公告)号:US07297463B2

    公开(公告)日:2007-11-20

    申请号:US11142444

    申请日:2005-06-02

    IPC分类号: C08F212/08

    摘要: A photosensitive polymer for forming high-resolution fine circuit patterns with an exposure light source of a short wavelength, and a chemically amplified photoresist composition including the polymer, are disclosed. The photosensitive polymer is represented by the following Formula 1, wherein R1 is a hydrogen atom, R2 is a hydrogen atom, R3 is a chlorine atom, a bromine atom, hydroxy, cyano, t-butoxy, CH2NH2, CONH2, CH═NH, CH(OH)NH2 or C(OH)═NH group, R4 is a hydrogen atom or methyl group, each of 1-x-y-z, x, y and z is a degree of polymerization of each repeating unit constituting the photosensitive polymer, x, y and z are 0.01 to 0.8, respectively, and n is 1 or 2.

    摘要翻译: 公开了用于形成具有短波长的曝光光源的高分辨率精细电路图案的光敏聚合物和包含该聚合物的化学放大光致抗蚀剂组合物。 光敏聚合物由下式1表示,其中R 1是氢原子,R 2是氢原子,R 3是 氯原子,溴原子,羟基,氰基,叔丁氧基,CH 2 NH 2,CONH 2,CH-NH,CH (OH)NH 2或C(OH)-NH基,R 4是氢原子或甲基,1-xyz,x,y和z分别为 构成感光性聚合物的各重复单元的x,y,z的聚合度分别为0.01〜0.8,n为1或2。

    Chemically amplified resist and a resist composition
    23.
    发明授权
    Chemically amplified resist and a resist composition 失效
    化学扩增抗蚀剂和抗蚀剂组合物

    公开(公告)号:US06743881B2

    公开(公告)日:2004-06-01

    申请号:US10257531

    申请日:2003-04-16

    IPC分类号: C08F21206

    CPC分类号: G03F7/0392

    摘要: The present invention relates to a polymer for a chemically amplified resist and a resist composition using the same. The present invention provides a polymer represented by the Formula (1) and a chemically resist composition for deep ultraviolet light comprising the same, The chemically amplified resist composition comprising the polymer represented by the formula (1) of the present invention responds process and can embody a micro-paten of high resolution on a substrate.

    摘要翻译: 本发明涉及一种用于化学放大抗蚀剂的聚合物和使用其的抗蚀剂组合物。 本发明提供由式(1)表示的聚合物和包含该聚合物的用于深紫外光的化学抗蚀剂组合物。包含本发明式(1)表示的聚合物的化学增幅抗蚀剂组合物响应过程并且可以体现 在基板上具有高分辨率的微孔板。

    ISOCYANURATE COMPOUND FOR FORMING ORGANIC ANTI-REFLECTIVE LAYER AND COMPOSITION INCLUDING SAME
    24.
    发明申请
    ISOCYANURATE COMPOUND FOR FORMING ORGANIC ANTI-REFLECTIVE LAYER AND COMPOSITION INCLUDING SAME 有权
    用于形成有机抗反射层的异氰酸酯化合物和包括其的组合物

    公开(公告)号:US20120164338A1

    公开(公告)日:2012-06-28

    申请号:US13393682

    申请日:2010-09-14

    摘要: An isocyanurate compound for forming an organic anti-reflective coating layer, which has superior stability and etch rate at a high temperature, and which has a high refractive index, is represented by following Formula 1. In Formula 1, R is independently a hydrogen atom or a methyl group, R1 is independently a chain type or ring type saturated or unsaturated hydrocarbyl group of 1 to 15 carbon atoms containing 0 to 6 of hetero atoms, and R2 independently a chain type or ring type saturated or unsaturated hydrocarbyl group of 1 to 15 carbon atoms containing 0 to 15 of hetero atoms, wherein, R1 can have at least two bonding parts, and in the case that R1 has at least two bonding parts, the rest parts except R1 of the compounds represented by Formula 1 can connect to the R1 to form a polymer structure.

    摘要翻译: 用于形成有机抗反射涂层的异氰脲酸酯化合物,其在高温下具有优异的稳定性和蚀刻速率,并且具有高折射率,由下式1表示。在式1中,R独立地为氢原子 或甲基,R 1独立地为含有0〜6个杂原子的1〜15个碳原子的链型或环型饱和或不饱和烃基,R2独立地为1〜1的链型或环型饱和或不饱和烃基 含有0〜15个杂原子的15个碳原子,其中,R1可以具有至少两个键合部分,并且在R1具有至少两个键合部分的情况下,由式1表示的化合物除了R1之外的其余部分可以连接到 R1形成聚合物结构。

    Polymer for chemically amplified resist and a resist composition using the same
    26.
    发明授权
    Polymer for chemically amplified resist and a resist composition using the same 有权
    用于化学放大抗蚀剂的聚合物和使用其的抗蚀剂组合物

    公开(公告)号:US06767687B1

    公开(公告)日:2004-07-27

    申请号:US10070477

    申请日:2002-07-23

    IPC分类号: G03F7004

    摘要: The present invention relates to a polymer for a chemically amplified resist and a resist composition using the same. The present invention provides a polymer represented by the Formula (1) and a chemically resist composition for extreme ultraviolet light comprising the same. The chemically amplified resist composition comprising the polymer represented by the formula (1) of the present invention responds to mono wavelength in a micro-lithography process and can embody a micro-pattern of high resolution on a substrate.

    摘要翻译: 本发明涉及一种用于化学放大抗蚀剂的聚合物和使用其的抗蚀剂组合物。 本发明提供由式(1)表示的聚合物和包含该聚合物的用于极紫外光的化学抗蚀剂组合物。 包含本发明的式(1)表示的聚合物的化学放大抗蚀剂组合物在微光刻工艺中响应于单波长,并​​且可以在衬底上体现高分辨率的微图案。