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342 条记录 (耗时 0.046 秒)

    RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
    22.
    发明申请
    RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN 有权
    耐蚀组合物及其制造方法

    公开(公告)号：US20120034563A1

    公开(公告)日：2012-02-09

    申请号：US13196446

    申请日：2011-08-02

    申请人： Koji ICHIKAWA ,  Satoshi Yamamoto

    发明人： Koji ICHIKAWA ,  Satoshi Yamamoto

    IPC分类号： G03F7/38 ,  G03F7/039

    CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/2059

    摘要： A resist composition contains; a resin having a structural unit derived from a compound represented by the formula (a); and an acid generator represented by the formula (B1). wherein R1 represents a hydrogen atom or a methyl group; A10 represents a single bond, an optionally substituted C1 to C6 alkanediyl group or the like; W1 represents an optionally substituted C4 to C36 alicyclic hydrocarbon group; A20 in each occurrence independently represents an optionally substituted C1 to C6 aliphatic hydrocarbon group; R2 in each occurrence independently represents a C1 to C12 perfluoroalkyl group; n represents 1 or 2; Q1 and Q2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group; Lb1 represents an optionally substituted C1 to C17 divalent aliphatic hydrocarbon group; Y represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; and Z+ represents an organic cation.

    摘要翻译： 抗蚀剂组合物含有 具有衍生自由式（a）表示的化合物的结构单元的树脂; 和由式（B1）表示的酸发生剂。 其中R1表示氢原子或甲基; A10表示单键，可以具有取代基的C1〜C6烷二基等; W1表示任选取代的C4至C36脂环族烃基; A20每次独立地表示任选取代的C 1至C 6脂族烃基; R2各自独立地表示C1〜C12全氟烷基; n表示1或2; Q1和Q2独立地表示氟原子或C1〜C6全氟烷基; Lb1表示任选取代的C 1至C 17二价脂族烃基; Y表示任选取代的C 1至C 18脂族烃基; Z +表示有机阳离子。

    RESIST PROCESSING METHOD
    24.
    发明申请
    RESIST PROCESSING METHOD 审中-公开
    电阻加工方法

    公开(公告)号：US20110189618A1

    公开(公告)日：2011-08-04

    申请号：US13062180

    申请日：2009-09-01

    申请人： Mitsuhiro Hata ,  Nobuo Ando ,  Satoshi Yamamoto ,  Junji Shigematsu ,  Akira Kamabuchi

    发明人： Mitsuhiro Hata ,  Nobuo Ando ,  Satoshi Yamamoto ,  Junji Shigematsu ,  Akira Kamabuchi

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0035 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/40

    摘要： A resist processing method comprises the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B), a cross-linking agent (C) and an acid amplifier (D) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.

    摘要翻译： 抗蚀剂处理方法包括以下步骤：（1）通过施加第一抗蚀剂组合物形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含：具有酸不稳定基团的树脂（A），其在碱性水溶液中不溶或难溶，并且呈现 通过酸，光酸产生剂（B），交联剂（C）和酸放大器（D）的作用将其溶于碱水溶液中并干燥; （2）预烘第一抗蚀膜; （3）暴露于第一抗蚀膜; （4）第一抗蚀剂膜的曝光后烘烤; （5）用第一碱性显影剂显影以获得第一抗蚀剂图案; （6）硬烘烤第一抗蚀剂图案，（7）通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上并干燥获得第二抗蚀剂膜; （8）预烘烤第二抗蚀剂膜; （9）使第二抗蚀剂膜曝光; （10）曝光后烘烤第二抗蚀膜; 和（11）用第二碱性显影剂显影以获得第二抗蚀剂图案。

    RESIST PROCESSING METHOD
    25.
    发明申请
    RESIST PROCESSING METHOD 审中-公开
    电阻加工方法

    公开(公告)号：US20110171586A1

    公开(公告)日：2011-07-14

    申请号：US13003178

    申请日：2009-07-07

    申请人： Mitsuhiro Hata ,  Satoshi Yamamoto ,  Takayuki Miyagawa

    发明人： Mitsuhiro Hata ,  Satoshi Yamamoto ,  Takayuki Miyagawa

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0035 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2022 ,  G03F7/38 ,  G03F7/40

    摘要： A resist processing method having the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B) and a cross-linking agent (C) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to a whole surface of the first resist film, and then exposing the first resist film through a mask; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre baking the second resist film; (9) exposing the second resist film through a mask; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.

    摘要翻译： 一种抗蚀剂处理方法，具有以下步骤：（1）通过施加第一抗蚀剂组合物形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含：具有酸不稳定基团的树脂（A），其在碱性水溶液中不溶或难溶，并且呈现 通过酸，光酸产生剂（B）和交联剂（C）的作用将其溶解在碱性水溶液中并干燥; （2）预烘第一抗蚀膜; （3）暴露于第一抗蚀剂膜的整个表面，然后通过掩模曝光第一抗蚀剂膜; （4）第一抗蚀剂膜的曝光后烘烤; （5）用第一碱性显影剂显影以获得第一抗蚀剂图案; （6）对第一抗蚀剂图案进行硬烘烤，（7）通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上，然后干燥获得第二抗蚀剂膜; （8）预烘烤第二抗蚀剂膜; （9）通过掩模使第二抗蚀剂膜曝光; （10）曝光后烘烤第二抗蚀膜; 和（11）用第二碱性显影剂显影以获得第二抗蚀剂图案。

    Semiconductor integrated circuit device and manufacturing method thereof
    29.
    发明授权
    Semiconductor integrated circuit device and manufacturing method thereof 有权
    半导体集成电路器件及其制造方法

    公开(公告)号：US07897467B2

    公开(公告)日：2011-03-01

    申请号：US12784876

    申请日：2010-05-21

    申请人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

    发明人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

    IPC分类号： H01L21/8234 ,  H01L21/336

    CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878

    摘要： After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

    摘要翻译： 在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9） 在半导体衬底（1）上形成高介电常数绝缘膜（10）。 因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数 在半导体衬底（1）上形成恒定绝缘膜（10）。

    Cable-type load sensor
    30.
    发明授权
    Cable-type load sensor 有权
    电缆式负载传感器

    公开(公告)号：US07779706B2

    公开(公告)日：2010-08-24

    申请号：US12356816

    申请日：2009-01-21

    申请人： Tomiya Abe ,  Yasuyuki Hishida ,  Satoshi Yamamoto

    发明人： Tomiya Abe ,  Yasuyuki Hishida ,  Satoshi Yamamoto

    IPC分类号： G01L1/22

    CPC分类号： G01L1/205 ,  G01L1/20

    摘要： A cable-type load sensor having an advantage in layout and being capable of sensing the load precisely is provided. The cable-type load sensor comprises a linear member composed of electrically conductive rubber and having a hollow part extending in the longitudinal direction at the central part of the cross section, and a cladding layer composed of the same kind of rubber material as the linear member and covering the circumference on the linear member.

    摘要翻译： 提供了具有布局优势并且能够精确地感测负载的电缆式负载传感器。 电缆式负载传感器包括由导电橡胶构成的线状部件，在该截面的中央部具有沿长度方向延伸的中空部，以及由与该直线部件相同种类的橡胶材料构成的包覆层 并且覆盖线状构件上的圆周。