METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE
    21.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE 有权
    制造半导体光学器件的方法

    公开(公告)号:US20080233668A1

    公开(公告)日:2008-09-25

    申请号:US12049456

    申请日:2008-03-17

    Applicant: Shinji Abe

    Inventor: Shinji Abe

    Abstract: A method for manufacturing a semiconductor optical device includes: forming a laminated semiconductor structure of GaN-based materials on a semiconductor wafer, the laminated semiconductor structure forming a laser diode of GaN-based materials, including an active layer having a quantum well structure; cleaving the semiconductor wafer including the laminated semiconductor structure to expose a cleaved end face of the laminated semiconductor structure; and forming an SiO2 film on the cleaved end face and performing a heat treatment to cause Ga vacancy diffusion in the active layer to disorder the quantum well structure of the active layer.

    Abstract translation: 一种制造半导体光学器件的方法包括:在半导体晶片上形成GaN基材料的叠层半导体结构,所述叠层半导体结构形成GaN基材料的激光二极管,其包括具有量子阱结构的有源层; 将包含层叠半导体结构的半导体晶片切断,使层叠半导体结构的切断端面露出; 在切割端面上形成SiO 2膜,进行热处理,使有源层发生Ga空位扩散,使有源层的量子阱结构紊乱。

    METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE
    22.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE 失效
    制造半导体光学器件的方法

    公开(公告)号:US20080090315A1

    公开(公告)日:2008-04-17

    申请号:US11868629

    申请日:2007-10-08

    Abstract: After a metal cap layer is laminated on a semiconductor laminated structure, a waveguide ridge is formed, the waveguide ridge is coated with an SiO2 film, and a resist is applied; then, a resist pattern is formed, the resist pattern exposing the surface of the SiO2 film on the top of the waveguide ridge, and burying the SiO2 film in channels with a resist film having a surface higher than the surface of the metal cap layer of the waveguide ridge and lower than the surface of the SiO2 film of the waveguide ridge; the SiO2 film is removed by dry etching, using the resist pattern as a mask. The metal cap layer is removed by wet etching, and a p-GaN layer of the waveguide ridge is exposed to form the electrode layer.

    Abstract translation: 在半导体层叠结构上层压金属覆盖层之后,形成波导脊,将波导脊涂覆有SiO 2膜,并施加抗蚀剂; 然后,形成抗蚀剂图案,抗蚀剂图案将波导脊的顶部上的SiO 2膜的表面曝光,并且在SiO 2膜中埋入SiO 2膜, 具有比波导脊的金属盖层的表面高的表面的抗蚀剂膜,并且低于波导脊的SiO 2膜的表面; 通过干蚀刻除去SiO 2膜,使用抗蚀剂图案作为掩模。 通过湿蚀刻去除金属盖层,并且暴露波导脊的p-GaN层以形成电极层。

    Olefinic polymer and process for producing the same
    23.
    发明授权
    Olefinic polymer and process for producing the same 有权
    烯烃聚合物及其制备方法

    公开(公告)号:US07157540B2

    公开(公告)日:2007-01-02

    申请号:US11246075

    申请日:2005-10-11

    Abstract: The olefinic polymer characterised in that the n-decane-soluble content thereof is 10% by weight or less and the content of a ligand having a cyclopentadienyl structure is 5 ppb by weight or less. The process for producing an olefinic polymer is a process of producing an olefinic polymer by (co)polymerizing olefins in a gas phase using a fluidized-bed reactor, the process comprising: a polymerization step of (co)polymerizing the olefins with allowing a saturated aliphatic hydrocarbon to exist in a concentration of 2 to 30 mol % in the fluidized-bed reactor and a ligand removing step involving a step of bringing the resulting (co)polymer into contact with a ligand-remover and a step of heating said (co)polymer which has been brought into contact with the ligand-remover.

    Abstract translation: 该烯烃类聚合物的特征在于,正癸烷可溶成分为10重量%以下,具有环戊二烯基结构的配体的含量为5ppb重量%以下。 制备烯烃聚合物的方法是通过使用流化床反应器在气相中共聚合烯烃来生产烯烃聚合物的方法,该方法包括:(共)使烯烃聚合以允许饱和的聚合步骤 在流化床反应器中以2至30mol%的浓度存在的脂族烃,以及涉及使所得(共)聚合物与配体去除剂接触的步骤的配体去除步骤,以及加热所述(共 - )聚合物,其与配体去除剂接触。

    Process for producing polyolefin
    25.
    发明授权
    Process for producing polyolefin 有权
    生产聚烯烃的方法

    公开(公告)号:US06891002B2

    公开(公告)日:2005-05-10

    申请号:US10395254

    申请日:2003-03-25

    Abstract: A process for producing a polyolefin according to the present invention comprises (co) polymerizing one or two or more α-olefins in a vapor phase in a fluidized-bed reactor, wherein the concentration of (A) a saturated aliphatic hydrocarbon in the fluidized bed reactor is 1 mol % or more and at least one compound selected from (B) an aliphatic amide and (C) a nonionic surfactant constituted only of carbon, oxygen and hydrogen atoms is made to exist in the reactor. The present invention can provide a process for producing a polyolefin, the process ensuring that the prevention of clogging caused by the generation of sheet or block polymers and a high efficiency of the production of a polyolefin due to good catalytic activity can be accomplished at the same time and also having superb continuous productivity.

    Abstract translation: 根据本发明的聚烯烃的制备方法包括在流化床反应器中(a)在气相中共聚合一种或两种以上的α-烯烃,其中在流化床中(A)饱和脂族烃的浓度 反应器为1摩尔%以上,并且在反应器中存在至少一种选自(B)脂族酰胺和(C)仅由碳,氧和氢原子构成的非离子表面活性剂的化合物。 本发明可以提供一种聚烯烃的制造方法,该方法确保防止由于片状或嵌段聚合物的产生而导致的堵塞以及由于良好的催化活性而产生聚烯烃的高效率可以在同一个 时间也具有极好的连续生产力。

    Method for fabricating of spindle housing with bearing
    27.
    发明授权
    Method for fabricating of spindle housing with bearing 失效
    具有轴承的主轴壳体的制造方法

    公开(公告)号:US4908922A

    公开(公告)日:1990-03-20

    申请号:US289727

    申请日:1988-12-27

    Applicant: Shinji Abe

    Inventor: Shinji Abe

    CPC classification number: B29C45/1459 B29L2031/04 Y10T29/49682 Y10T29/49705

    Abstract: A method for fabricating a spindle housing with a ball bearing has the following steps: positioning the ball bearing in a cavity of a molding tool in a condition that a pre-load is provided to eliminate an internal clearance of the ball bearing, and injecting synthetic resin within the cavity of the molding tool after relative movement of the outer race and inner races of the ball bearing due to the pre-load.

    Abstract translation: 制造具有滚珠轴承的主轴壳体的方法具有以下步骤:将球轴承定位在模制工具的空腔中,在提供预加载以消除球轴承的内部间隙的情况下,以及注入合成 树脂在模制工具的空腔内,由于预加载,外圈和滚珠轴承的内圈相对运动。

    Network switch for logical isolation between user network and server unit management network and its operating method
    29.
    发明授权
    Network switch for logical isolation between user network and server unit management network and its operating method 失效
    网络交换机用于用户网络和服务器单元管理网络之间的逻辑隔离及其操作方法

    公开(公告)号:US08019890B2

    公开(公告)日:2011-09-13

    申请号:US10948239

    申请日:2004-09-24

    Applicant: Shinji Abe

    Inventor: Shinji Abe

    CPC classification number: G06F9/4405 H04L29/12009 H04L29/12207 H04L61/20

    Abstract: In a network switch including a user network port connectable to a user network, a plurality of down link ports each connectable to one server unit, a server unit management network port connectable to a server unit management network for managing the server unit, a store-and-forward switching unit connected to the user network port, the down link ports and the server unit management network port, and a control unit connected to the store-and-forward switching unit, when a packet that has arrived at one of the down link ports is a dynamic host configuration protocol (DHCP) packet including a network boot option, the control unit operates the store-and-forward switching unit to transmit the packet to the server unit management network port.

    Abstract translation: 在包括可连接到用户网络的用户网络端口的网络交换机中,可连接到一个服务器单元的多个下行链路端口,可连接到用于管理服务器单元的服务器单元管理网络的服务器单元管理网络端口, 连接到用户网络端口,下行链路端口和服务器单元管理网络端口的前向切换单元,以及连接到存储转发交换单元的控制单元,当已经到达下一个 链路端口是包括网络引导选项的动态主机配置协议(DHCP)数据包,控制单元操作存储转发交换单元,将数据包发送到服务器单元管理网络端口。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    30.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号:US20100244074A1

    公开(公告)日:2010-09-30

    申请号:US12716399

    申请日:2010-03-03

    Abstract: A semiconductor light-emitting device and a manufacturing method are provided, in which a metal film is deposited with positional differences between edges of an insulating film and the metal film, opposite a ridge waveguide top face, utilizing an overhanging-shaped resist pattern. An opening through the insulating film is extended in width without another masking step by etching the insulation film on the ridge waveguide top face, using the metal film as a mask. The contact area between a p-side electrode and a p-type contact layer is increased and operating voltage of the semiconductor light-emitting device is reduced.

    Abstract translation: 提供了一种半导体发光器件和制造方法,其中利用突出形状的抗蚀剂图案,沉积金属膜,其间绝缘膜和金属膜的边缘之间的位置差异与脊形波导顶面相对。 通过使用金属膜作为掩模,通过蚀刻脊形波导顶面上的绝缘膜,通过绝缘膜延伸宽度而不进行另一掩蔽步骤。 p侧电极和p型接触层之间的接触面积增大,半导体发光元件的工作电压降低。

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