METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE
    22.
    发明申请
    METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE 审中-公开
    形成图案的方法,制造发光装置的方法和发光装置

    公开(公告)号:US20110303911A1

    公开(公告)日:2011-12-15

    申请号:US13213255

    申请日:2011-08-19

    IPC分类号: H01L27/32 H01L51/52

    摘要: Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic.

    摘要翻译: 对设置有光催化性导电膜和绝缘膜的基板的表面进行氧化处理; 进行硅烷偶联剂的处理,形成硅烷偶联剂膜,将基材的表面改性为疏液性; 并且用能量大于或等于用于形成光催化性导电膜的材料的带隙的能量(小于等于390nm)的光照射衬底的表面,使得只有硅烷偶联 光催化性导电膜的表面上的试剂膜分解,光催化性导电膜的表面可以改性为亲液性的。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    23.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
    半导体器件和半导体器件的制造方法

    公开(公告)号:US20110031494A1

    公开(公告)日:2011-02-10

    申请号:US12911041

    申请日:2010-10-25

    IPC分类号: H01L29/12 H01L21/36

    摘要: A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

    摘要翻译: 一种制造半导体器件的方法包括以下步骤:在透光衬底上形成栅电极,在栅电极和衬底上形成含有无机材料的栅极绝缘层,在栅极上形成含有可光聚合反应性基团的有机层 通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层,通过除去除了聚合的有机层的残留物形成有机聚合物层,形成 在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜,通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极,形成 栅电极上的半导体层,源极和漏极。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    25.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
    半导体器件和半导体器件的制造方法

    公开(公告)号:US20080099759A1

    公开(公告)日:2008-05-01

    申请号:US11923349

    申请日:2007-10-24

    IPC分类号: H01L51/40 H01L51/50

    摘要: A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

    摘要翻译: 一种制造半导体器件的方法包括以下步骤:在透光衬底上形成栅电极,在栅电极和衬底上形成含有无机材料的栅极绝缘层,在栅极上形成含有可光聚合反应性基团的有机层 通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层,通过除去除了聚合的有机层的残留物形成有机聚合物层,形成 在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜,通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极,形成 栅电极上的半导体层,源极和漏极。