公开(公告)号：US5183685A

公开(公告)日：1993-02-02

申请号：US749618

申请日：1991-08-19

申请人： Shumpei Yamazaki

发明人： Shumpei Yamazaki

IPC分类号： C23C16/26 ,  C23C16/511

CPC分类号： C23C16/511 ,  C23C16/26 ,  Y10T428/30

摘要： Diamond films can be formed on a surface by virtue of a microwave energy. A catalyst gas is introduced into a reaction chamber for ECR CVD, along with a carbon compound gas. The catalyst gas consists of a gaseous compound of nickel, germanium and/or manganese such as NiH.sub.2 NiF, NiO, NiF(H.sub.2 O)n (where n=1.3), Ni(CN).sub.2, Ni(C.sub.5 H.sub.5).sub.2, GeH.sub.4, GeF.sub.4, manganese carboxyl, MnF.sub.2 and so forth.

摘要翻译： 凭借微波能量可以在表面上形成金刚石薄膜。 将催化剂气体与碳化合物气体一起引入用于ECR CVD的反应室中。 催化剂气体由镍，锗和/或锰的气体化合物，如NiH 2 NiF，NiO，NiF（H 2 O）n（其中n = 1.3），Ni（CN）2，Ni（C 5 H 5）2，GeH 4，GeF 4 ，锰羧基，MnF 2等。

公开(公告)号：US4957900A

公开(公告)日：1990-09-18

申请号：US174503

申请日：1988-03-28

申请人： Shumpei Yamazaki

发明人： Shumpei Yamazaki

IPC分类号： C01G1/00 ,  C04B35/00 ,  C04B35/45 ,  C04B41/80 ,  H01B12/06 ,  H01B13/00 ,  H01F6/06 ,  H01F41/04 ,  H01L39/24

CPC分类号： H01L39/2454 ,  H01F41/048 ,  H01F6/06 ,  H01L39/2464 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/703 ,  Y10S505/704 ,  Y10S505/705 ,  Y10S505/728 ,  Y10S505/731 ,  Y10S505/742 ,  Y10T428/24926

摘要： A superconducting ceramic film is deposited on a substrate sputtering. In virtue of the low thermal conductivity of ceramic, a laser beam is radiated to the ceramic film in order to remove the irradiated portion by sublimation and produce a pattern on the ceramic film.

公开(公告)号：US4591892A

公开(公告)日：1986-05-27

申请号：US525459

申请日：1983-08-22

申请人： Shumpei Yamazaki

发明人： Shumpei Yamazaki

IPC分类号： H01L31/0376 ,  H01L31/075 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L31/075 ,  H01L31/03762 ,  Y02E10/548 ,  Y10S438/925

摘要： A semiconductor photoelectric conversion device has a conductive substrate or a first conductive layer formed on a suitable substrate, a non-single-crystal semiconductor laminate member formed on the conductive substrate or first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN or NIP junction, and a second conductive layer formed on the non-single-crystal semiconductor laminate member. The I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains oxygen, carbon or phosphorus only in such a low concentration as 5.times.10.sup.18 atoms/cm.sup.3 or less, 4.times.10.sup.18 atoms/cm.sup.3 or less, or 5.times.10.sup.15 atoms/cm.sup.3 or less, respectively.

摘要翻译： 半导体光电转换装置具有形成在合适的基板上的导电基板或第一导电层，形成在导电基板或第一导电层上的非单晶半导体层叠体，其包括至少一个I型非单晶半导体层叠体， 晶体半导体层，并且在其中形成有至少一个PI，NI，PIN或NIP结，以及形成在非单晶半导体层叠构件上的第二导电层。 非单晶半导体层叠体的I型非单晶半导体层仅含有5×10 18原子/ cm 3以下，4×10 18原子/ cm 3以下或5×10 15以下的低浓度的氧，碳或磷 原子/ cm3以下。