摘要:
Reinforced materials for high temperature superconducting tape. More specifically reinforcement materials for significantly reducing the amount of required reinforcement and attaining much higher stress tolerances at practical conductor dimensions are described herein.
摘要:
This invention provides a substrate for a superconducting wire used for manufacturing a superconducting wire with excellent superconductivity and a method for manufacturing the same. Such substrate for a superconducting wire exhibits the crystal orientation of metals on the outermost layer, such as a c-axis orientation rate of 99% or higher, a Δω of 6 degrees or less, and a percentage of an area in which the crystal orientation is deviated by 6 degrees or more from the (001) [100] per unit area of 6% or less.
摘要:
Reinforced materials for high temperature superconducting tape. More specifically reinforcement materials for significantly reducing the amount of required reinforcement and attaining much higher stress tolerances at practical conductor dimensions are described herein.
摘要:
The present invention relates to a textured substrate for epitaxial film formation, comprising a textured metal layer at least on one side, wherein the textured metal layer includes a copper layer having a cube texture and a nickel layer having a thickness of 100 to 20000 nm formed on the copper layer; the nickel layer has a nickel oxide layer formed on a surface thereof, having a thickness of 1 to 30 nm, and including a nickel oxide; and the nickel layer further includes a palladium-containing region formed of palladium-containing nickel at an interface with the nickel oxide layer. The top layer of the textured substrate, i.e. the nickel oxide layer, has a surface roughness of preferably 10 nm or less.
摘要:
An objective of the present invention is to provide a copper substrate for epitaxial growth, which has higher biaxial crystal orientation, and a method for manufacturing the same. The substrate for epitaxial growth of the present invention contains a biaxially crystal-oriented copper layer, wherein the full width at half maximum Δφ of a peak based on the pole figure of the copper layer is within 5° and the tail width Δβ of the peak based on the pole figure is within 15° Such a substrate for epitaxial growth is manufactured by a 1st step of performing heat treatment of a copper layer so that Δφ is within 6° and the tail width Δβ is within 25°, and after the 1st step, a 2nd step of performing heat treatment of the copper layer at a temperature higher than the temperature for heat treatment in the 1st step, so that Δφ is within 5° and the tail width Δβ is within 15°.
摘要:
There is provided a method for producing a substrate (600) suitable for supporting an elongated superconducting element, wherein, e.g., a deformation process is utilized in order to form disruptive strips in a layered solid element, and where etching is used to form undercut volumes (330, 332) between an upper layer (316) and a lower layer (303) of the layered solid element. Such relatively simple steps enable providing a substrate which may be turned into a superconducting structure, such as a superconducting tape, having reduced AC losses, since the undercut volumes (330, 332) may be useful for separating layers of material. In a further embodiment, there is placed a superconducting layer on top of the upper layer (316) and/or lower layer (303), so as to provide a superconducting structure with reduced AC losses.
摘要:
The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, Rs, and highly linear surface reactance, Xs, i.e. high JIMD. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.
摘要:
Disclosed herein is a high-temperature superconducting tape, including: a substrate; a buffer layer formed on the substrate; and a high-temperature superconducting layer formed on the buffer layer, wherein the substrate is made of SUS310s or stainless steel containing 0.01-1% of silicon (Si) and 1-5% of molybdenum (Mo) and has an average metal crystal grain size of 12 μm or less, and the high-temperature superconducting layer is made of a ReBCO (ReBa2Cu3O7, Re=Nd, Sm, Eu, Gd, Dy, Ho, Y)-based superconductive material. The high-temperature superconducting tape is advantageous with the result that a high-grade superconducting layer can be deposited on the thin buffer layer and thus the critical current density of the high-temperature superconducting tape can be improved, thereby remarkably improving the characteristics of the high-temperature superconducting tape.
摘要:
The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. A clad textured metal substrate for forming the epitaxial thin film thereon according to the present invention comprises a metallic layer and a nickel layer which is bonded to at least one face of the metallic layer, wherein the nickel layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦7 degrees and has a nickel purity of 99.9% or more. The oriented metal substrate is manufactured by cold-working the nickel sheet having a purity of 99.9% or more, heat-treating it for orientation, and bonding the metal sheet with the oriented nickel sheet by using a surface activated bonding process.
摘要:
An oxide superconductor member is composed of a tape-shaped substrate, an intermediate layer formed on this substrate and an oxide superconductor thin film layer formed on this intermediate layer. A surface of the tape-shaped substrate is polished by continuously running the tape-shaped substrate. The polishing step includes initial polishing process and finishing process which are carried out such that the average surface roughness Ra of the substrate becomes 2 nanometers or less and the in-plane directionality of the intermediate layer becomes 5° or less after the polishing step.