公开(公告)号：US07393710B2

公开(公告)日：2008-07-01

申请号：US11247935

申请日：2005-10-11

申请人： Jin Chul Kim ,  Su Yeol Lee ,  Chang Zoo Kim ,  Sang Heon Han ,  Keun Man Song ,  Tae Jun Kim ,  Seok Beom Choi

发明人： Jin Chul Kim ,  Su Yeol Lee ,  Chang Zoo Kim ,  Sang Heon Han ,  Keun Man Song ,  Tae Jun Kim ,  Seok Beom Choi

IPC分类号： H01L21/00

CPC分类号： H01S5/4031 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01S5/2231 ,  H01S5/4087 ,  H01S2304/04

摘要： The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.

摘要翻译： 本发明涉及一种双波长半导体激光器件，更具体地涉及一种多波长半导体激光器件的制造方法。 在该方法中，提供了具有分隔成至少第一和第二区域的上表面的基板。 然后，形成基板上的第一电介质掩模，仅露出第一区域。 然后，在衬底的第一区域上生长用于第一半导体激光器的外延层。 然后，形成基板上的第二电介质掩模，仅露出第二区域。 然后，在衬底的第二区域上生长用于第二半导体激光器的外延层。

公开(公告)号：US20120299038A1

公开(公告)日：2012-11-29

申请号：US13293858

申请日：2011-11-10

申请人： Deok Ki Hwang ,  Young Ju Han ,  Hee Seok Choi ,  Ju Won Lee ,  Pil Geun Kang ,  Seok Beom Choi

发明人： Deok Ki Hwang ,  Young Ju Han ,  Hee Seok Choi ,  Ju Won Lee ,  Pil Geun Kang ,  Seok Beom Choi

IPC分类号： H01L33/36

CPC分类号： H01L33/62 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/483 ,  H01L33/505 ,  H01L33/507 ,  H01L33/641 ,  H01L2224/16

摘要： A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode under the first semiconductor layer, a reflective electrode layer under the second conductive semiconductor layer, a second electrode under the reflective electrode layer, and a support member under the first semiconductor layer and the reflective electrode layer around the first and second electrodes. A first connection electrode may be provided under the first electrode. At least a part of the first connection electrode is provided in the support member. A second connection electrode may be provided under the second electrode At least a part of the second connection electrode may be provided in the support member.

摘要翻译： 可以提供一种发光器件，其包括衬底，发光结构，第一半导体层下的第一电极，第二导电半导体层下的反射电极层，反射电极层下的第二电极和支撑构件 在第一半导体层和第一和第二电极周围的反射电极层之下。 可以在第一电极下方设置第一连接电极。 第一连接电极的至少一部分设置在支撑构件中。 第二连接电极可以设置在第二电极下方第二连接电极的至少一部分可以设置在支撑构件中。

公开(公告)号：US07361521B2

公开(公告)日：2008-04-22

申请号：US11503944

申请日：2006-08-15

申请人： Jeong Tak Oh ,  Jae Hoon Lee ,  Seok Beom Choi

发明人： Jeong Tak Oh ,  Jae Hoon Lee ,  Seok Beom Choi

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/007

摘要： The present invention relates to a method of manufacturing a vertical GaN-based LED. The method includes forming an insulating pattern on a substrate to define LED regions having a predetermined size; sequentially stacking an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer on the substrate except for the insulating pattern to form a light emitting structure; removing the insulating pattern to divide the light emitting structure into LED sections having a predetermined size; forming p-electrodes on the LED sections, respectively; forming a structure support layer on the p-electrodes; removing the substrate to expose the divided n-type GaN-based semiconductor layer; and forming n-electrodes on the exposed n-type GaN-based semiconductor layer.

摘要翻译： 本发明涉及一种制造垂直GaN基LED的方法。 该方法包括在基板上形成绝缘图案以限定具有预定尺寸的LED区域; 在除了绝缘图案之外的衬底上依次堆叠n型GaN基半导体层，有源层和p型GaN基半导体层以形成发光结构; 去除绝缘图案以将发光结构分成具有预定尺寸的LED部分; 分别在LED部分上形成p电极; 在p电极上形成结构支撑层; 去除衬底以暴露分开的n型GaN基半导体层; 在暴露的n型GaN基半导体层上形成n电极。

公开(公告)号：US09269878B2

公开(公告)日：2016-02-23

申请号：US13293858

申请日：2011-11-10

申请人： Deok Ki Hwang ,  Young Ju Han ,  Hee Seok Choi ,  Ju Won Lee ,  Pil Geun Kang ,  Seok Beom Choi

发明人： Deok Ki Hwang ,  Young Ju Han ,  Hee Seok Choi ,  Ju Won Lee ,  Pil Geun Kang ,  Seok Beom Choi

IPC分类号： H01L33/36 ,  H01L33/62 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/50

CPC分类号： H01L33/62 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/483 ,  H01L33/505 ,  H01L33/507 ,  H01L33/641 ,  H01L2224/16

摘要： A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode under the first semiconductor layer, a reflective electrode layer under the second conductive semiconductor layer, a second electrode under the reflective electrode layer, and a support member under the first semiconductor layer and the reflective electrode layer around the first and second electrodes. A first connection electrode may be provided under the first electrode. At least a part of the first connection electrode is provided in the support member. A second connection electrode may be provided under the second electrode At least a part of the second connection electrode may be provided in the support member.

摘要翻译： 可以提供一种发光器件，其包括衬底，发光结构，第一半导体层下的第一电极，第二导电半导体层下的反射电极层，反射电极层下的第二电极和支撑构件 在第一半导体层和第一和第二电极周围的反射电极层之下。 可以在第一电极下方设置第一连接电极。 第一连接电极的至少一部分设置在支撑构件中。 第二连接电极可以设置在第二电极下方第二连接电极的至少一部分可以设置在支撑构件中。