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21.发明授权公开(公告)号：US08120948B2
公开(公告)日：2012-02-21
申请号：US12561495
申请日：2009-09-17
申请人： Masahiko Nakayama , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
发明人： Masahiko Nakayama , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675
摘要： A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.
摘要翻译： 一种用于本发明一个方面的磁阻效应元件的数据写入方法，包括产生写入电流，其中从下降沿开始到下降沿结束的下降周期长于从开始 上升沿到上升沿结束，并且使写入电流流过磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层和设置在可变磁化方向之间的隧道势垒层， 第一磁性层和第二磁性层，以改变第二磁性层的磁化方向。
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22.发明申请公开(公告)号：US20100073998A1
公开(公告)日：2010-03-25
申请号：US12561495
申请日：2009-09-17
申请人： Masahiko NAKAYAMA , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
发明人： Masahiko NAKAYAMA , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675
摘要： A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.
摘要翻译： 一种用于本发明一个方面的磁阻效应元件的数据写入方法，包括产生写入电流，其中从下降沿开始到下降沿结束的下降周期长于从开始 上升沿到上升沿结束，并且使写入电流流过磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层和设置在可变磁化方向之间的隧道势垒层， 第一磁性层和第二磁性层，以改变第二磁性层的磁化方向。
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23.发明授权Magnetic memory element having an adjustment layer for reducing a leakage magnetic field from a reference layer and magnetic memory thereof 有权具有用于减小来自参考层的泄漏磁场的调整层及其磁存储器的磁存储元件公开(公告)号：US08634238B2
公开(公告)日：2014-01-21
申请号：US13604386
申请日：2012-09-05
申请人： Masahiko Nakayama , Hisanori Aikawa , Masaru Toko , Hiroaki Yoda , Tatsuya Kishi , Sumio Ikegawa
发明人： Masahiko Nakayama , Hisanori Aikawa , Masaru Toko , Hiroaki Yoda , Tatsuya Kishi , Sumio Ikegawa
IPC分类号： G11C11/15
CPC分类号： H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a memory layer, a first nonmagnetic layer, a reference layer, a second nonmagnetic layer, and an adjustment layer which are stacked. The adjustment layer is configured to reduce a leakage magnetic field from the reference layer. The adjustment layer is formed by stacking an interface layer provided on the second nonmagnetic layer, and a magnetic layer having magnetic anisotropy perpendicular to a film surface. Saturation magnetization of the interface layer is larger than that of the magnetic layer.
摘要翻译： 根据一个实施例，磁存储元件包括堆叠的存储器层，第一非磁性层，参考层，第二非磁性层和调整层。 调整层被配置为减少来自参考层的泄漏磁场。 调整层通过层叠设置在第二非磁性层上的界面层和垂直于膜表面的具有磁各向异性的磁性层而形成。 界面层的饱和磁化强度大于磁性层的饱和磁化强度。
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公开(公告)号：US20130099337A1
公开(公告)日：2013-04-25
申请号：US13604386
申请日：2012-09-05
申请人： Masahiko Nakayama , Hisanori Aikawa , Masaru Toko , Hiroaki Yoda , Tatsuya Kishi , Sumio Ikegawa
发明人： Masahiko Nakayama , Hisanori Aikawa , Masaru Toko , Hiroaki Yoda , Tatsuya Kishi , Sumio Ikegawa
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a memory layer, a first nonmagnetic layer, a reference layer, a second nonmagnetic layer, and an adjustment layer which are stacked. The adjustment layer is configured to reduce a leakage magnetic field from the reference layer. The adjustment layer is formed by stacking an interface layer provided on the second nonmagnetic layer, and a magnetic layer having magnetic anisotropy perpendicular to a film surface. Saturation magnetization of the interface layer is larger than that of the magnetic layer.
摘要翻译： 根据一个实施例，磁存储元件包括堆叠的存储器层，第一非磁性层，参考层，第二非磁性层和调整层。 调整层被配置为减少来自参考层的泄漏磁场。 调整层通过层叠设置在第二非磁性层上的界面层和垂直于膜表面的具有磁各向异性的磁性层而形成。 界面层的饱和磁化强度大于磁性层的饱和磁化强度。
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公开(公告)号：US20080158740A1
公开(公告)日：2008-07-03
申请号：US12037726
申请日：2008-02-26
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228
摘要： A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.
摘要翻译： 磁存储器件包括磁阻元件和第一布线层。 磁阻元件包括固定层，记录层和介于其间的非磁性层。 第一布线层沿第一方向延伸并产生用于在磁阻元件中记录数据的磁场。 记录层包括从第一方向旋转了大于0°至不大于20°的角度的第二方向延伸的基部，以及从第一和第二侧的第一和第二侧突出的第一和第二突出部 在与第二方向垂直的第三方向上的基部。 基部的第三和第四侧相对于第三方向在与第二方向旋转的旋转方向相同的旋转方向上倾斜。
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公开(公告)号：US20070013015A1
公开(公告)日：2007-01-18
申请号：US11378358
申请日：2006-03-20
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译： 磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。 参考层设置在第一表面上并具有固定的磁化方向。 磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。 矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。 第一突出部从第一长边突出的位置从中心向第一短边移动。 第二突出部从第二长边突出的位置从中心向第二短边移动。
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公开(公告)号：US07875903B2
公开(公告)日：2011-01-25
申请号：US12037726
申请日：2008-02-26
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228
摘要： A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.
摘要翻译： 磁存储器件包括磁阻元件和第一布线层。 磁阻元件包括固定层，记录层和介于其间的非磁性层。 第一布线层沿第一方向延伸并产生用于在磁阻元件中记录数据的磁场。 记录层包括从第一方向旋转了大于0°至不大于20°的角度的第二方向延伸的基部，以及从第一和第二侧的第一和第二侧突出的第一和第二突出部 在与第二方向垂直的第三方向上的基部。 基部的第三和第四侧相对于第三方向在与第二方向旋转的旋转方向相同的旋转方向上倾斜。
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公开(公告)号：US20080130176A1
公开(公告)日：2008-06-05
申请号：US12019657
申请日：2008-01-25
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译： 磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。 参考层设置在第一表面上并具有固定的磁化方向。 磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。 矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。 第一突出部从第一长边突出的位置从中心向第一短边移动。 第二突出部从第二长边突出的位置从中心向第二短边移动。
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公开(公告)号：US07414880B2
公开(公告)日：2008-08-19
申请号：US11378358
申请日：2006-03-20
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译： 磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。 参考层设置在第一表面上并具有固定的磁化方向。 磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。 矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。 第一突出部从第一长边突出的位置从中心向第一短边移动。 第二突出部从第二长边突出的位置从中心向第二短边移动。
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公开(公告)号：US07411263B2
公开(公告)日：2008-08-12
申请号：US11389110
申请日：2006-03-27
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228
摘要： A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.
摘要翻译： 磁存储器件包括磁阻元件和第一布线层。 磁阻元件包括固定层，记录层和介于其间的非磁性层。 第一布线层沿第一方向延伸并产生用于在磁阻元件中记录数据的磁场。 记录层包括从第一方向旋转了大于0°至不大于20°的角度的第二方向延伸的基部，以及从第一和第二侧的第一和第二侧突出的第一和第二突出部 在与第二方向垂直的第三方向上的基部。 基部的第三和第四侧相对于第三方向在与第二方向旋转的旋转方向相同的旋转方向上倾斜。
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