公开(公告)号：US10438641B2

公开(公告)日：2019-10-08

申请号：US16068523

申请日：2018-02-01

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Yohei Shiokawa

IPC: G11C11/16 ,  G11C11/18 ,  G11C7/04 ,  G01R33/09 ,  H01L27/22

Abstract: A data writing method according to an aspect is configured such that a spin-orbit torque-type magnetoresistance effect element includes: a spin-orbit torque wire extending in a first direction; and a functional portion having a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer stacked on one surface of the spin-orbit torque wire in that order from the spin-orbit torque wire, wherein a voltage applied in the first direction of the spin-orbit torque wire is equal to or higher than a critical writing voltage at an environmental temperature and is equal to or lower than a predetermined value.

公开(公告)号：US12232426B2

公开(公告)日：2025-02-18

申请号：US18367135

申请日：2023-09-12

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Yohei Shiokawa

IPC: H10N52/00 ,  G11C11/16 ,  G11C11/18 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85 ,  H10N52/80

Abstract: A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.

公开(公告)号：US11832531B2

公开(公告)日：2023-11-28

申请号：US17296896

申请日：2019-01-31

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Yohei Shiokawa

IPC: H10N52/80 ,  H10B61/00 ,  H10N52/00 ,  H10N52/01

CPC classification number: H10N52/80 ,  H10B61/00 ,  H10N52/101 ,  H10N52/01

Abstract: A spin-orbit torque magnetization rotational element includes: a first insulating layer with first and second openings; a first conductive portion formed inside the first opening; a second conductive portion formed inside the second opening; a spin-orbit torque wiring located in a first direction and extends in a second direction over the first and second conductive portions; and a first ferromagnetic layer located on the side opposite to the first insulating layer in the spin-orbit torque wiring, wherein the first conductive portion includes a first surface facing the spin-orbit torque wiring, a second surface facing the first surface and is located at a position farther from the spin-orbit torque wiring than the first surface, and a side surface connecting the first surface and the second surface, and the side surface includes a continuous major surface and a third surface inclined or curved and is discontinuous with respect to the major surface.

公开(公告)号：US11778925B2

公开(公告)日：2023-10-03

申请号：US17171623

申请日：2021-02-09

Applicant: TDK CORPORATION

Inventor： Zhenyao Tang ,  Yohei Shiokawa ,  Tomoyuki Sasaki

IPC: H10N52/80 ,  H10B61/00 ,  H10N52/00 ,  H10N50/85 ,  H10N52/01

CPC classification number: H10N52/80 ,  H10B61/22 ,  H10N50/85 ,  H10N52/00 ,  H10N52/01

Abstract: A magnetic device includes a stacked body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first insulating layer which covers side surfaces of the stacked body; and a radiator located outside the first insulating layer with respect to the stacked body, in which a distance between the stacked body and the radiator differs depending on a position of the stacked body in a stacking direction.

公开(公告)号：US11611036B2

公开(公告)日：2023-03-21

申请号：US17077165

申请日：2020-10-22

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Yohei Shiokawa

IPC: H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14

Abstract: A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.

公开(公告)号：US11387407B2

公开(公告)日：2022-07-12

申请号：US16807704

申请日：2020-03-03

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Yohei Shiokawa ,  Minoru Sanuki

IPC: H01L29/82 ,  H01L43/02 ,  H01F10/32

Abstract: A spin-orbit-torque magnetization rotational element and a spin-orbit-torque magnetoresistance effect element capable of easily rotating or reversing magnetization of a ferromagnetic layer. The spin-orbit-torque magnetization rotational element includes spin-orbit-torque wiring and a first ferromagnetic layer laminated on the spin-orbit-torque wiring in a first direction, wherein the spin-orbit-torque wiring includes a first region extending in a second direction, a second region extending in a third direction different from the second direction, and an intersection region where the first region and the second region intersect, and wherein the first ferromagnetic layer and the intersection region at least partially overlap in a plan view from the first direction.

公开(公告)号：US11276447B2

公开(公告)日：2022-03-15

申请号：US16333176

申请日：2018-07-24

Applicant: TDK CORPORATION

Inventor： Yohei Shiokawa ,  Tomoyuki Sasaki

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01F10/32 ,  H01L27/105 ,  H01L43/08 ,  H01L29/82 ,  H01L21/8239 ,  H01L43/10 ,  H01L43/06

Abstract: A spin current magnetoresistance effect element includes a magnetoresistance effect element, a spin-orbit torque wiring that extends in a first direction intersecting a lamination direction of the magnetoresistance effect element and is positioned on a side of the magnetoresistance effect element with the second ferromagnetic metal layer, and a control unit configured to control a direction of a current during reading. The control unit is connected to at least one of a first and second point, which are positions with the magnetoresistance effect element interposed therebetween in the first direction in the spin-orbit torque wiring, and a third point on a side of the magnetoresistance effect element with the first ferromagnetic layer. The control unit shunts a read current during reading from the third point toward the first point and the second point or merges the read current toward the third point from the first point and the second point.

公开(公告)号：US11257533B2

公开(公告)日：2022-02-22

申请号：US16921211

申请日：2020-07-06

Applicant: TDK CORPORATION

Inventor： Yohei Shiokawa

IPC: G11C11/00 ,  G11C11/16 ,  H01L43/04 ,  H01L43/10 ,  H01L43/08

Abstract: A magnetic memory includes a storage element including a first ferromagnetic layer, a first conductive layer which faces the first ferromagnetic layer in a first direction and extends in a second direction different from the first direction, and a first conductive part and a second conductive part which are connected to the first conductive layer at positions which sandwich the first ferromagnetic layer in the second direction when seen in the first direction; and a plurality of first switching elements which are electrically connected to the first conductive part of the storage element.

公开(公告)号：US11211547B2

公开(公告)日：2021-12-28

申请号：US16493419

申请日：2019-02-06

Applicant: TDK CORPORATION

Inventor： Takuya Ashida ,  Yohei Shiokawa ,  Tomoyuki Sasaki

IPC: H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01F41/32 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: A spin-orbit-torque type magnetization rotating element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a metal oxide whose electrical conductivity properties exhibit a metallic behavior with respect to temperature, and an oxygen concentration in a region on the first ferromagnetic layer side and an oxygen concentration in a region opposite to the first ferromagnetic layer are asymmetrical with respect to a center of the spin-orbit torque wiring in a thickness direction thereof.

公开(公告)号：US20210384414A1

公开(公告)日：2021-12-09

申请号：US17407815

申请日：2021-08-20

Applicant: TDK CORPORATION

Inventor： Katsuyuki Nakada ,  Yohei Shiokawa

IPC: H01L43/02 ,  H01L27/22

Abstract: This spin-orbit-torque magnetization rotating element includes a spin-orbit torque wiring extending in a first direction and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a compound represented by XYZ or X2YZ with respect to a stoichiometric composition.