公开(公告)号：US20210375540A1

公开(公告)日：2021-12-02

申请号：US17240656

申请日：2021-04-26

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Yuki Sato ,  Kenji Otake ,  Zhemin Zhang ,  Byron Lovell Williams ,  Dongbin Hou ,  Sombuddha Chakraborty

IPC: H01F41/04 ,  H01F17/00 ,  H01F17/04

Abstract: A laminate embedded core and coil structure comprises a magnetic core embedded in a laminate structure that includes two types of laminates. A first laminate embeds the coils of the structure and a second laminate fills space between the magnetic core and the first laminate, as well as space below the magnetic core and lower surface of the first laminate. The first and second laminates form a laminate structure that protects and improves isolation of the magnetic components. Solder resist encloses the laminate structure, magnetic core and coils. The laminate embedded core and coil structure may be assembled on a transformer leadframe of various types using non-conductive paste.

公开(公告)号：US10707297B2

公开(公告)日：2020-07-07

申请号：US16178065

申请日：2018-11-01

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey Alan West ,  Thomas D. Bonifield ,  Byron Lovell Williams

IPC: H01L49/02 ,  H01L29/06 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L23/522 ,  H01L27/06

Abstract: A microelectronic device contains a high voltage component having a high voltage node and a low voltage node. The high voltage node is isolated from the low voltage node by a main dielectric between the high voltage node and low voltage elements at a surface of the substrate of the microelectronic device. A lower-bandgap dielectric layer is disposed between the high voltage node and the main dielectric. The lower-bandgap dielectric layer contains at least one sub-layer with a bandgap energy less than a bandgap energy of the main dielectric. The lower-bandgap dielectric layer extends beyond the high voltage node continuously around the high voltage node. The lower-bandgap dielectric layer has an isolation break surrounding the high voltage node at a distance of at least twice the thickness of the lower-bandgap dielectric layer from the high voltage node.

公开(公告)号：US10366958B2

公开(公告)日：2019-07-30

申请号：US15857234

申请日：2017-12-28

Applicant: Texas Instruments Incorporated

Inventor： Thomas Dyer Bonifield ,  Jeffrey Alan West ,  Byron Lovell Williams

IPC: B81B7/00 ,  H01L23/00 ,  H01L23/64 ,  H01L25/00 ,  H01L27/07 ,  H01L49/02 ,  H01L25/065

Abstract: A packaged multichip device includes a first IC die with an isolation capacitor utilizing a top metal layer as its top plate and a lower metal layer as its bottom plate. A second IC die has a second isolation capacitor utilizing its top metal layer as its top plate and a lower metal layer as its bottom plate. A first bondwire end is coupled to one top plate and a second bondwire end is coupled to the other top plate. The second bondwire end includes a stitch bond including a wire approach angle not normal to the top plate it is bonded to and is placed so that the stitch bond's center is positioned at least 5% further from an edge of this top plate on a bondwire crossover side compared to a distance of the stitch bond's center from the side opposite the bondwire crossover side.

公开(公告)号：US10349526B2

公开(公告)日：2019-07-09

申请号：US16274772

申请日：2019-02-13

Applicant: Texas Instruments Incorporated

Inventor： Byron Lovell Williams ,  Asad Mahmood Haider ,  Licheng M. Han

IPC: H01F5/00 ,  H05K3/06 ,  H01F41/04 ,  H01F17/00

Abstract: An integrated circuit with a micro inductor or with a micro transformer with a magnetic core. A process of forming an integrated circuit with a micro inductor with a magnetic core. A process of forming an integrated circuit with a micro transformer with a magnetic core.

公开(公告)号：US20190182961A1

公开(公告)日：2019-06-13

申请号：US16274772

申请日：2019-02-13

Applicant: Texas Instruments Incorporated

Inventor： Byron Lovell Williams ,  Asad Mahmood Haider ,  Licheng M. Han

IPC: H05K3/06 ,  H01F41/04 ,  H01F5/00 ,  H01F17/00

CPC classification number: H05K3/061 ,  H01F5/00 ,  H01F17/0033 ,  H01F41/046 ,  Y10T29/49073

Abstract: An integrated circuit with a micro inductor or with a micro transformer with a magnetic core. A process of forming an integrated circuit with a micro inductor with a magnetic core. A process of forming an integrated circuit with a micro transformer with a magnetic core.

公开(公告)号：US10109574B1

公开(公告)日：2018-10-23

申请号：US15478615

申请日：2017-04-04

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey A. West ,  Byron Lovell Williams ,  David Leonard Larkin ,  Weidong Tian

IPC: H01L23/48 ,  H01L23/52 ,  H01L21/02 ,  H01L49/02 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A method and structure for improving high voltage breakdown reliability of a microelectronic device, e.g., a galvanic digital isolator, involves providing an abatement structure around metal plate corners of a high voltage isolation capacitor to ameliorate the effects of an electric field formed thereat during operation of the device due to dielectric discontinuity.

公开(公告)号：US20180026095A1

公开(公告)日：2018-01-25

申请号：US15714682

申请日：2017-09-25

Applicant: Texas Instruments Incorporated

Inventor： Raja Selvaraj ,  Anant Shankar Kamath ,  Byron Lovell Williams ,  Thomas D. Bonifield ,  John Kenneth Arch

IPC: H01L29/06 ,  H01L23/522 ,  H01L49/02 ,  H01L23/00

CPC classification number: H01L29/0646 ,  H01L21/265 ,  H01L21/761 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5286 ,  H01L24/05 ,  H01L27/0676 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L28/60 ,  H01L2224/48463

Abstract: Isolator structures for an integrated circuit with reduced effective parasitic capacitance. Disclosed embodiments include an isolator structure with parallel conductive elements forming a capacitor or inductive transformer, overlying a semiconductor structure including a well region of a first conductivity type formed within an tank region of a second conductivity type. The tank region is surrounded by doped regions and a buried doped layer of the first conductivity type, forming a plurality of diodes in series to the substrate. The junction capacitances of the series diodes have the effect of reducing the parasitic capacitance apparent at the isolator.

公开(公告)号：US20170263696A1

公开(公告)日：2017-09-14

申请号：US15606158

申请日：2017-05-26

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey Alan West ,  Thomas D. Bonifield ,  Byron Lovell Williams

IPC: H01L49/02 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L28/91 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/823481 ,  H01L23/5225 ,  H01L27/0629 ,  H01L28/00 ,  H01L28/40 ,  H01L28/60 ,  H01L29/0692 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7833

Abstract: A microelectronic device contains a high voltage component having a high voltage node and a low voltage node. The high voltage node is isolated from the low voltage node by a main dielectric between the high voltage node and low voltage elements at a surface of the substrate of the microelectronic device. A lower-bandgap dielectric layer is disposed between the high voltage node and the main dielectric. The lower-bandgap dielectric layer contains at least one sub-layer with a bandgap energy less than a bandgap energy of the main dielectric. The lower-bandgap dielectric layer extends beyond the high voltage node continuously around the high voltage node. The lower-bandgap dielectric layer has an isolation break surrounding the high voltage node at a distance of at least twice the thickness of the lower-bandgap dielectric layer from the high voltage node.

公开(公告)号：US09583558B2

公开(公告)日：2017-02-28

申请号：US15045421

申请日：2016-02-17

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey Alan West ,  Thomas D. Bonifield ,  Byron Lovell Williams

IPC: H01L21/00 ,  H01L49/02 ,  H01L21/02 ,  H01L29/78 ,  H01L27/06 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L28/91 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/823481 ,  H01L27/0629 ,  H01L28/40 ,  H01L28/60 ,  H01L29/0692 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7833

Abstract: A microelectronic device contains a high voltage component having a high voltage node and a low voltage node. The high voltage node is isolated from the low voltage node by a main dielectric between the high voltage node and low voltage elements at a surface of the substrate of the microelectronic device. A lower-bandgap dielectric layer is disposed between the high voltage node and the main dielectric. The lower-bandgap dielectric layer contains at least one sub-layer with a bandgap energy less than a bandgap energy of the main dielectric. The lower-bandgap dielectric layer extends beyond the high voltage node continuously around the high voltage node. The lower-bandgap dielectric layer has an isolation break surrounding the high voltage node at a distance of at least twice the thickness of the lower-bandgap dielectric layer from the high voltage node.

Abstract translation: 微电子器件包含具有高电压节点和低电压节点的高电压分量。 高电压节点通过微电子器件的基板的表面处的高压节点和低电压元件之间的主电介质与低电压节点隔离。 低压隙电介质层设置在高电压节点和主电介质之间。 低带隙电介质层含有至少一个带隙能量小于主电介质带隙能量的子层。 低带隙电介质层围绕高压节点连续延伸超过高压节点。 较低带隙电介质层具有围绕高电压节点的隔离断裂，距离高压节点的至少两倍于低带隙电介质层的厚度。

公开(公告)号：US20160172434A1

公开(公告)日：2016-06-16

申请号：US15045421

申请日：2016-02-17

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey Alan West ,  Thomas D. Bonifield ,  Byron Lovell Williams

IPC: H01L49/02

CPC classification number: H01L28/91 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/823481 ,  H01L27/0629 ,  H01L28/40 ,  H01L28/60 ,  H01L29/0692 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7833

Abstract: A microelectronic device contains a high voltage component having a high voltage node and a low voltage node. The high voltage node is isolated from the low voltage node by a main dielectric between the high voltage node and low voltage elements at a surface of the substrate of the microelectronic device. A lower-bandgap dielectric layer is disposed between the high voltage node and the main dielectric. The lower-bandgap dielectric layer contains at least one sub-layer with a bandgap energy less than a bandgap energy of the main dielectric. The lower-bandgap dielectric layer extends beyond the high voltage node continuously around the high voltage node. The lower-bandgap dielectric layer has an isolation break surrounding the high voltage node at a distance of at least twice the thickness of the lower-bandgap dielectric layer from the high voltage node.