SUBSTRATE-INTEGRATED WAVEGUIDE
    22.
    发明公开

    公开(公告)号:US20230352315A1

    公开(公告)日:2023-11-02

    申请号:US17733921

    申请日:2022-04-29

    Abstract: One example includes a method for fabricating a substrate-integrated waveguide (SIW). The method includes forming a first metal layer on a carrier surface. The first metal layer can extend along an axis. The method also includes forming a first metal sidewall extending from a first edge of the first metal layer along the axis and forming a second metal sidewall extending from a second edge of the first metal layer opposite the first edge along the axis to form a trough extending along the axis. The method also includes providing a dielectric material over the first metal layer and over the first and second metal sidewalls. The method further includes forming a second metal layer over the dielectric material and over the first and second metal sidewalls. The second metal layer can extend along the axis to enclose the SIW in all radial directions along the axis.

    Multilayer package substrate with stress buffer

    公开(公告)号:US11784113B2

    公开(公告)日:2023-10-10

    申请号:US17233110

    申请日:2021-04-16

    Abstract: A semiconductor package includes a multilayer package substrate including a top layer including a top dielectric layer and a top metal layer providing a top portion of pins on top filled vias, and a bottom layer including a bottom dielectric layer and a bottom metal layer on bottom filled vias that provide externally accessible bottom side contact pads. The top dielectric layer together with the bottom dielectric layer providing electrical isolation between the pins. And integrated circuit (IC) die that comprises a substrate having a semiconductor surface including circuitry, with nodes connected to bond pads with bonding features on the bond pads. An electrically conductive material interconnect provides a connection between the top side contact pads and the bonding features. At least a first pin includes at least one bump stress reduction structure that includes a local physical dimension change of at least 10% in at least one dimension.

    ELECTRONIC DEVICE MULTILEVEL PACKAGE SUBSTRATE FOR IMPROVED ELECTROMIGRATION PREFORMANCE

    公开(公告)号:US20230055211A1

    公开(公告)日:2023-02-23

    申请号:US17406150

    申请日:2021-08-19

    Abstract: An electronic device includes a multilevel package substrate with first and second levels extending in planes of first and second directions and spaced apart from one another along a third direction, the first level having a first side with landing areas spaced apart from one another along the first direction. The multilevel package substrate includes a conductive structure having first and second ends and conductive portions in the first and second levels that provide a conductive path along the first direction from the landing areas toward the second end, where the conductive structure includes indents that extend into the conductive portions in the first level, the indents spaced apart from one another along the first direction and positioned along the first direction between respective pairs of the landing areas.

    MULTI-LAYER SEMICONDUCTOR PACKAGE WITH STACKED PASSIVE COMPONENTS

    公开(公告)号:US20220037280A1

    公开(公告)日:2022-02-03

    申请号:US16941818

    申请日:2020-07-29

    Abstract: A semiconductor package includes a first layer including a semiconductor die embedded within a dielectric substrate, and a first set of metal pillars extending through the dielectric substrate, a second layer stacked on the first layer, the second layer including a metal trace patterned on the dielectric substrate of the first layer, a passive component including at least one capacitor or resistor electrically coupled to the metal trace, and a second set of metal pillars extending from the metal trace to an opposing side of the second layer, and a third layer stacked on the second layer, the third layer including at least one inductor electrically coupled to metal pillars of the second set of metal pillars.

    ANTENNA-ON-PACKAGE INCLUDING MULTIPLE TYPES OF ANTENNA

    公开(公告)号:US20210328367A1

    公开(公告)日:2021-10-21

    申请号:US17232849

    申请日:2021-04-16

    Abstract: An AIP includes a package substrate including a top layer including a top metal layer including a first antenna type and a second antenna type, and a bottom layer including a bottom dielectric and a metal layer including a first and second contact pad and filled vias, and an IC embedded therein. Bond pads of an IC are coupled by a connection including ≥1 filled via for connecting to the top and/or bottom metal layer. A first metal pillar is between the first contact pad and first antenna, and a second metal pillar is between the second contact pad and second antenna. A first filled via is coupled to the first metal pillar providing a transmission line from the first contact pad to the first antenna. A second filled via is coupled to the first metal pillar providing a transmission line from the second contact pad to the second antenna.

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