公开(公告)号：US20200095703A1

公开(公告)日：2020-03-26

申请号：US16495282

申请日：2018-03-20

Applicant: Toyo Tanso Co., Ltd.

Inventor： Satoshi Torimi ,  Yusuke Sudo ,  Masato Shinohara ,  Youji Teramoto ,  Takuya Sakaguchi ,  Satoru Nogami ,  Makoto Kitabatake

IPC: C30B25/18 ,  H01L21/02 ,  H01L29/34 ,  H01L29/16 ,  C30B25/20 ,  C30B29/36

Abstract: In a method for manufacturing a reformed SiC wafer 41 (a surface treatment method for a SiC wafer) having its surface that is reformed by processing an untreated SiC wafer 40 before formation of an epitaxial layer 42, the method includes a surface reforming step as described below. That is, the untreated SiC wafer 40 includes BPDs as dislocations parallel to an inside of a (0001) face, and TEDs. Property of the surface of the untreated SiC wafer 40 is changed so as to have higher rate in which portions having BPDs on the surface of the untreated SiC wafer 40 propagate as TEDs at a time of forming the epitaxial layer 42.

公开(公告)号：US10014176B2

公开(公告)日：2018-07-03

申请号：US15527602

申请日：2015-11-17

Applicant: Toyo Tanso Co., Ltd.

Inventor： Norihito Yabuki ,  Satoshi Torimi ,  Satoru Nogami

IPC: H01L21/00 ,  H01L21/04 ,  H01L21/306

CPC classification number: H01L21/046 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3247 ,  H01L21/67115 ,  H01L21/67346 ,  H01L21/7602 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813

Abstract: Provided is a SiC substrate treatment method for, with respect to a SiC substrate (40) that has, on its surface, grooves (41), activating ions while preventing roughening of the surface of the substrate. In the method, an ion activation treatment in which the SiC substrate (40) is heated under Si vapor pressure is performed to the SiC substrate (40) has, on its surface, an ion implantation region (46) in which ions have been implanted, and has the grooves (41) provided in a region including at least the ion implantation region (46), thereby ions that are implanted in the SiC substrate (40) is activated while etching the surface of the substrate.

公开(公告)号：US20170236905A1

公开(公告)日：2017-08-17

申请号：US15360498

申请日：2016-11-23

Applicant: TOYO TANSO CO., LTD.

Inventor： Satoshi Torimi ,  Masato Shinohara ,  Youji Teramoto ,  Norihito Yabuki ,  Satoru Nogami ,  Makoto Kitabatake

IPC: H01L29/16 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/04 ,  H01L23/544

CPC classification number: H01L29/1608 ,  H01L21/02008 ,  H01L21/02016 ,  H01L21/02019 ,  H01L21/0475 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/3065 ,  H01L23/544 ,  H01L2223/54433

Abstract: Provided is a method for manufacturing a thin SiC wafer by which a SiC wafer is thinned using a method without generating crack or the like, the method in which polishing after adjusting the thickness of the SiC wafer can be omitted. The method for manufacturing the thin SiC wafer 40 includes a thinning step. In the thinning step, the thickness of the SiC wafer 40 can be decreased to 100 μm or less by performing the Si vapor pressure etching in which the surface of the SiC wafer 40 is etched by heating the SiC wafer 40 after cutting out of an ingot 4 under Si vapor pressure.

公开(公告)号：US20150249025A1

公开(公告)日：2015-09-03

申请号：US14468524

申请日：2014-08-26

Applicant: TOYO TANSO CO., LTD.

Inventor： Satoshi Torimi ,  Norihito Yabuki ,  Satoru Nogami

IPC: H01L21/67 ,  F27D11/00 ,  F27D7/06

CPC classification number: F27D11/00 ,  F27B17/0025 ,  F27D5/0037 ,  F27D7/06 ,  F27D11/02 ,  F27D2005/0081 ,  F27D2007/063 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67346 ,  H01L21/67386

Abstract: Provided is a heat treatment container having a small size and capable of efficiently performing a heat treatment on a SiC substrate. A heat treatment container is a container for a heat treatment on a SiC substrate 40 under Si vapor pressure. The SiC substrate 40 is made of, at least in a surface thereof, single crystal SiC. The heat treatment container includes a container part 30 and a substrate holder 50. The container part 30 includes an internal space 33 in which Si vapor pressure is caused. The internal space 33 is partially open. The substrate holder 50 is able to support the SiC substrate 40. When the substrate holder 50 supports the SiC substrate 40, an open portion of the container part 30 is covered so that the internal space 33 is hermetically sealed.

Abstract translation: 提供一种尺寸小且能够有效地对SiC基板进行热处理的热处理容器。 热处理容器是在Si蒸汽压下在SiC衬底40上进行热处理的容器。 SiC衬底40至少在其表面上由单晶SiC制成。 热处理容器包括容器部分30和基板保持件50.容器部分30包括其中引起Si蒸气压的内部空间33。 内部空间33部分打开。 衬底保持器50能够支撑SiC衬底40.当衬底保持器50支撑SiC衬底40时，容纳部分30的开口部分被覆盖，使得内部空间33被气密密封。