公开(公告)号：US08545411B2

公开(公告)日：2013-10-01

申请号：US12772088

申请日：2010-04-30

Applicant: Moo Ho Bae ,  Tae Yun Kim

Inventor： Moo Ho Bae ,  Tae Yun Kim

IPC: A61B6/00

CPC classification number: G01S15/8981 ,  A61B8/488

Abstract: Embodiments of adaptively performing clutter filtering are disclosed. In one embodiment, by way of non-limiting example, an ultrasound system comprises: an ultrasound data acquisition unit configured to transmit and receive ultrasound signals to and from a target object to thereby output a plurality of ultrasound data for obtaining a color Doppler mode image, wherein the target object includes at least one of a tissue and a blood flow; and a processing unit placed in communication with the ultrasound data acquisition unit and being configured to locate the plurality of ultrasound data on a complex plane, the processing unit being further configured to perform a circle fitting upon the plurality of ultrasound data located on the complex plane and perform a downmixing and a clutter filtering upon the circle-fitted ultrasound data in consideration of speed of the tissue.

Abstract translation: 公开了自适应执行杂波滤波的实施例。 在一个实施例中，作为非限制性示例，超声系统包括：超声数据获取单元，被配置为向目标对象发送和接收超声信号，从而输出多个超声数据，以获得彩色多普勒模式图像 其中，所述目标对象包括组织和血流中的至少一个; 以及处理单元，放置成与所述超声数据获取单元通信并且被配置为将所述多个超声数据定位在复平面上，所述处理单元还被配置为对位于所述复平面上的所述多个超声数据执行圆适配 考虑到组织的速度，对圆形装配的超声数据执行下混合和杂波滤波。

公开(公告)号：US08502245B2

公开(公告)日：2013-08-06

申请号：US13357964

申请日：2012-01-25

Applicant: Tae Yun Kim ,  Hyo Kun Son

Inventor： Tae Yun Kim ,  Hyo Kun Son

IPC: H01L33/00 ,  H01L29/06 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12

CPC classification number: H01L33/06 ,  H01L33/08 ,  H01L33/32

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer.

Abstract translation: 提供了一种半导体发光器件。 半导体发光器件包括第一导电类型半导体层，有源层和第二导电类型半导体层。 有源层包括第一有源层，第二有源层，第一导电类型半导体层上的电子势垒层。 第一有源层和第二有源层包括量子阱层和量子势垒层。 电子势垒层形成在第一有源层和第二有源层之间。 第二导电型半导体层形成在有源层上。

公开(公告)号：US08378380B2

公开(公告)日：2013-02-19

申请号：US11681478

申请日：2007-03-02

Applicant: Tae Yun Kim

Inventor： Tae Yun Kim

IPC: H01L33/00

CPC classification number: H01L33/46 ,  H01L33/007 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0083

Abstract: Provided are a nitride semiconductor light-emitting device and a method for manufacturing the same, capable of improving light emitting efficiency by forming a reflection layer on a lateral side of an LED chip. An embodiment provides a nitride semiconductor light-emitting device includes a light-emitting device chip and a reflection layer. The reflection layer is formed on a lateral side of the light-emitting device chip.

Abstract translation: 提供一种氮化物半导体发光器件及其制造方法，其能够通过在LED芯片的侧面上形成反射层来提高发光效率。 实施例提供了一种氮化物半导体发光器件，其包括发光器件芯片和反射层。 反射层形成在发光元件芯片的侧面。

公开(公告)号：US20120119182A1

公开(公告)日：2012-05-17

申请号：US13357964

申请日：2012-01-25

Applicant: Tae Yun Kim ,  Hyo Kun Son

Inventor： Tae Yun Kim ,  Hyo Kun Son

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L33/08 ,  H01L33/32

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer.

Abstract translation: 提供了一种半导体发光器件。 半导体发光器件包括第一导电类型半导体层，有源层和第二导电类型半导体层。 有源层包括第一有源层，第二有源层，第一导电类型半导体层上的电子势垒层。 第一有源层和第二有源层包括量子阱层和量子势垒层。 电子势垒层形成在第一有源层和第二有源层之间。 第二导电型半导体层形成在有源层上。

公开(公告)号：US08148740B2

公开(公告)日：2012-04-03

申请号：US12941847

申请日：2010-11-08

Applicant: Tae Yun Kim ,  Hyo Kun Son

Inventor： Tae Yun Kim ,  Hyo Kun Son

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.

Abstract translation: 提供一种半导体发光器件及其制造方法。 半导体发光层包括第一导电类型半导体层，第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层。 有源层包括量子阱层，量子势垒层和双阻挡层。

公开(公告)号：US20090240153A1

公开(公告)日：2009-09-24

申请号：US12404248

申请日：2009-03-13

Applicant: Tae Yun Kim

Inventor： Tae Yun Kim

IPC: A61B8/00

CPC classification number: G01S15/8981 ,  G01S7/5205 ,  G01S7/52063

Abstract: Embodiments for filtering clutter signals from receive signals obtained in a Doppler mode in an ultrasound system are disclosed. In one embodiment, the ultrasound system comprises a Tx/Rx unit, a signal processing unit and an input unit. The Tx/Rx unit transmits ultrasound signals to a target object and receives echoes reflected from the target object. The signal processing unit processes the received echoes to provide 2-dimensional image data of the target object, the 2-dimensional image data being representative of a 2-dimensional image. The input unit enables a user to set a region of interest (ROI) on the 2-dimensional image of the target object. The Tx/Rx unit and the signal processing unit are further configured to operate such that a Doppler mode image pixel data corresponding to the ROI is obtained. The signal processing unit is further configured to set filter cutoff frequencies based on characteristics of the Doppler mode image pixel data and filter the Doppler mode image pixel data with the set filter cutoff frequencies to output filtered pixel data with clutter signals filtered.

Abstract translation: 公开了用于从超声系统中以多普勒模式获得的接收信号滤波杂波信号的实施例。 在一个实施例中，超声系统包括Tx / Rx单元，信号处理单元和输入单元。 Tx / Rx单元将超声信号发送到目标对象并接收从目标对象反射的回波。 信号处理单元处理接收到的回波以提供目标对象的二维图像数据，二维图像数据代表二维图像。 输入单元使得用户能够在目标对象的二维图像上设置感兴趣区域（ROI）。 Tx / Rx单元和信号处理单元还被配置为操作，使得获得与ROI相对应的多普勒模式图像像素数据。 信号处理单元还被配置为基于多普勒模式图像像素数据的特性来设置滤波器截止频率，并用设定的滤波器截止频率对多普勒模式图像像素数据进行滤波，以输出滤波后的杂波信号的滤波像素数据。

公开(公告)号：US20070205429A1

公开(公告)日：2007-09-06

申请号：US11681478

申请日：2007-03-02

Applicant: Tae Yun Kim

Inventor： Tae Yun Kim

IPC: H01L33/00

CPC classification number: H01L33/46 ,  H01L33/007 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0083

Abstract: Provided are a nitride semiconductor light-emitting device and a method for manufacturing the same, capable of improving light emitting efficiency by forming a reflection layer on a lateral side of an LED chip. Am embodiment provides a nitride semiconductor light-emitting device includes a light-emitting device chip and a reflection layer. The reflection layer is formed on a lateral side of the light-emitting device chip.

Abstract translation: 提供一种氮化物半导体发光器件及其制造方法，其能够通过在LED芯片的侧面上形成反射层来提高发光效率。 实施例提供了一种氮化物半导体发光器件，其包括发光器件芯片和反射层。 反射层形成在发光元件芯片的侧面。

公开(公告)号：US20060104139A1

公开(公告)日：2006-05-18

申请号：US11125687

申请日：2005-05-10

Applicant: Hwang Hur ,  Tae Yun Kim

Inventor： Hwang Hur ,  Tae Yun Kim

IPC: G11C7/00

CPC classification number: G11C11/40611 ,  G11C11/406 ,  G11C11/40615 ,  G11C11/40618 ,  G11C11/40622

Abstract: In a memory device having an N number of banks, a refresh operation according to a piled refresh scheme is performed during a self-refresh mode to refresh the N number of banks in regular sequence when it is necessary to refresh all of the N number of banks. A refresh operation according to a Partial Array Self Refresh (PASR) scheme is performed during a self-refresh mode when it is necessary to refresh only an i number of banks (where 1

Abstract translation: 在具有N个存储体的存储器件中，在自刷新模式期间执行根据堆叠刷新方案的刷新操作，以便在需要刷新N个数量的N个存储块时，按规则顺序刷新N个存储区 银行。 在自刷新模式期间，当仅需刷新i个存储体（其中1