公开(公告)号：US10686125B2

公开(公告)日：2020-06-16

申请号：US16222031

申请日：2018-12-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Harry-Hak-Lay Chuang ,  Hung Cho Wang ,  Tong-Chern Ong ,  Wen-Ting Chu ,  Yu-Wen Liao ,  Kuei-Hung Shen ,  Kuo-Yuan Tu ,  Sheng-Huang Huang

IPC: H01L47/00 ,  H01L43/02 ,  H01L45/00 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

Abstract: The present disclosure, in some embodiments, relates to an integrated circuit. The integrated circuit includes a dielectric protection layer disposed over a dielectric structure that laterally surrounds one or more conductive interconnect layers. The dielectric protection layer has a protrusion extending outward from an upper surface of the dielectric protection layer. A bottom electrode is disposed over the dielectric protection layer and has sidewalls extending outward from a lower surface of the bottom electrode through the dielectric protection layer. The bottom electrode has a substantially planar upper surface over the protrusion. A data storage element is over the substantially planar upper surface of the bottom electrode, and a top electrode is over the data storage element.

公开(公告)号：US10516106B2

公开(公告)日：2019-12-24

申请号：US15939832

申请日：2018-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Ting Chu ,  Tong-Chern Ong ,  Ying-Lang Wang

IPC: H01L45/00 ,  H01L27/24

Abstract: The present disclosure relates to a resistive random access memory (RRAM) device. In some embodiments, the RRAM device has a bottom electrode disposed over a lower interconnect layer surrounded by an inter-level dielectric (ILD) layer. A dielectric data storage layer having a variable resistance is located above the bottom electrode, and a multi-layer top electrode is disposed over the dielectric data storage layer. The multi-layer top electrode has conductive top electrode layers separated by an oxygen barrier structure configured to mitigate movement of oxygen within the multi-layer top electrode. By including an oxygen barrier structure within the top electrode, the reliability of the RRAM device is improved since oxygen is kept close to the dielectric data storage layer.

公开(公告)号：US20190123264A1

公开(公告)日：2019-04-25

申请号：US16222031

申请日：2018-12-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Harry-Hak-Lay Chuang ,  Hung Cho Wang ,  Tong-Chern Ong ,  Wen-Ting Chu ,  Yu-Wen Liao ,  Kuei-Hung Shen ,  Kuo-Yuan Tu ,  Sheng-Huang Huang

IPC: H01L43/02 ,  H01L45/00 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1675

Abstract: The present disclosure, in some embodiments, relates to an integrated circuit. The integrated circuit includes a dielectric protection layer disposed over a dielectric structure that laterally surrounds one or more conductive interconnect layers. The dielectric protection layer has a protrusion extending outward from an upper surface of the dielectric protection layer. A bottom electrode is disposed over the dielectric protection layer and has sidewalls extending outward from a lower surface of the bottom electrode through the dielectric protection layer. The bottom electrode has a substantially planar upper surface over the protrusion. A data storage element is over the substantially planar upper surface of the bottom electrode, and a top electrode is over the data storage element.

公开(公告)号：US20180375024A1

公开(公告)日：2018-12-27

申请号：US15939832

申请日：2018-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Ting Chu ,  Tong-Chern Ong ,  Ying-Lang Wang

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1246 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608

Abstract: The present disclosure relates to an RRAM device having an electrode with an oxygen barrier structure, which is configured to improve RRAM reliability by mitigating oxygen movement and thereby maintaining oxygen within close proximity of a dielectric data storage layer, and an associated method of formation. In some embodiments, the RRAM device has a bottom electrode disposed over a lower interconnect layer surrounded by a ILD layer. A dielectric data storage layer having a variable resistance is located above the bottom electrode, and a multi-layer top electrode disposed over the dielectric data storage layer. The multi-layer top electrode has conductive top electrode layers separated by an oxygen barrier structure configured to mitigate movement of oxygen within the multi-layer top electrode. By including an oxygen barrier structure within the top electrode, the reliability of the RRAM device is improved since oxygen is kept close to the dielectric data storage layer.

公开(公告)号：US10164094B2

公开(公告)日：2018-12-25

申请号：US15640127

申请日：2017-06-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuo-Chi Tu ,  Jen-Sheng Yang ,  Sheng-Hung Shih ,  Tong-Chern Ong ,  Wen-Ting Chu

IPC: H01L29/78 ,  G11C11/22 ,  H01L27/1159 ,  H01L27/11592 ,  H01L29/51 ,  H01L29/66

Abstract: A semiconductor device includes a memory circuit and a logic circuit. The memory circuit includes a word line, a bit line, a common line and a memory transistor having a gate coupled to the word line, a drain coupled to the bit line and a source coupled to the common line. The logic circuit includes a field effect transistor (FET) having a gate, a drain and a source. The memory transistor has a gate electrode layer formed on a gate dielectric layer, and the gate dielectric layer includes a first insulating layer and a first ferroelectric (FE) material layer. The FET has a gate electrode layer formed on a gate dielectric layer, and the gate dielectric layer includes a second insulating layer and a second FE material layer.

公开(公告)号：US09412721B2

公开(公告)日：2016-08-09

申请号：US14280732

申请日：2014-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ping-Lin Yang ,  Jun-De Jin ,  Fu-Lung Hsueh ,  Sa-Lly Liu ,  Tong-Chern Ong ,  Chun-Jung Lin ,  Ya-Chen Kao

IPC: H01F5/00 ,  H01L25/065 ,  H01F27/28 ,  H01F41/04 ,  H01L23/522 ,  H01L23/48

CPC classification number: H01L25/0657 ,  H01F5/00 ,  H01F27/2804 ,  H01F41/046 ,  H01F2027/2809 ,  H01L23/48 ,  H01L23/5227 ,  H01L2225/06531 ,  H01L2924/0002 ,  Y10T29/4902 ,  H01L2924/00

Abstract: A communications structure comprises a first semiconductor substrate having a first coil, and a second semiconductor substrate having a second coil above the first semiconductor substrate. Inner edges of the first and second coils define a boundary of a volume that extends below the first coil and above the second coil. A ferromagnetic core is positioned at least partially within the boundary, such that a mutual inductance is provided between the first and second coils for wireless transmission of signals or power between the first and second coils.

Abstract translation: 通信结构包括具有第一线圈的第一半导体衬底和在第一半导体衬底上方具有第二线圈的第二半导体衬底。 第一和第二线圈的内边缘限定在第一线圈下方延伸并在第二线圈之上的体积的边界。 铁磁芯至少部分地位于边界内，使得在第一和第二线圈之间提供互感以在第一和第二线圈之间无线地传输信号或电力。