公开(公告)号：US07884368B2

公开(公告)日：2011-02-08

申请号：US12833822

申请日：2010-07-09

申请人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

发明人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

IPC分类号： H01L33/00

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969

摘要： One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode. Wherein the gate wire, the capacitor electrode and the capacitor wire are in the same layer as the gate electrode, and wherein the sealing layer does not cover a connection part of the source electrode and a connection part of the drain electrode and wherein the drain electrode and the source electrode are connected to the oxide semiconductor pattern via the connection part of the drain electrode and the connection part of the source electrode.

摘要翻译： 本发明的一个实施例是一种薄膜晶体管，其具有形成在绝缘基板上的栅电极，连接到栅极的栅极线，电容器电极，连接到电容器电极的电容器线，形成在栅极上的栅极绝缘体 电极，形成在栅极绝缘体上的氧化物半导体图案，形成在氧化物半导体图案上的密封层，形成在密封层上的漏电极和源电极，连接到漏电极的漏极和连接到漏电极的像素电极 源电极，漏极线和像素电极处于与漏电极和源极电极相同的层中。 其中栅极线，电容器电极和电容器线与栅电极处于相同的层中，并且其中密封层不覆盖源电极的连接部分和漏电极的连接部分，并且其中漏电极 并且源电极经由漏电极的连接部分和源电极的连接部分连接到氧化物半导体图案。

公开(公告)号：US20100258805A1

公开(公告)日：2010-10-14

申请号：US12753781

申请日：2010-04-02

申请人： Noriaki Ikeda ,  Kodai Murata ,  Manabu Ito ,  Chihiro Miyazaki

发明人： Noriaki Ikeda ,  Kodai Murata ,  Manabu Ito ,  Chihiro Miyazaki

IPC分类号： H01L33/16 ,  H01L29/786 ,  H01L21/44

CPC分类号： H01L27/1248 ,  H01L27/1255

摘要： One embodiment of the present invention is a thin film transistor having a substrate, a gate electrode formed on the substrate, a gate insulating film, a semiconductor layer formed on the gate insulating film, a protective film formed on the semiconductor layer and the gate insulating film and having first and second opening sections which are separately and directly formed on the semiconductor layer, a source electrode formed on the protective film and electrically connected to the semiconductor layer at the first opening section of the protective film, and a drain electrode formed on the protective film and electrically connected to the semiconductor layer at the second opening section of the protective film.

摘要翻译： 本发明的一个实施例是一种薄膜晶体管，其具有基板，形成在基板上的栅极电极，栅极绝缘膜，形成在栅极绝缘膜上的半导体层，形成在半导体层上的保护膜和栅极绝缘 膜，并且具有分开且直接形成在半导体层上的第一和第二开口部分，形成在保护膜上并与保护膜的第一开口部分处的半导体层电连接的源电极和形成在保护膜上的漏电极 保护膜，并与保护膜的第二开口部电连接到半导体层。

公开(公告)号：US07795613B2

公开(公告)日：2010-09-14

申请号：US11787554

申请日：2007-04-17

申请人： Manabu Ito ,  Masato Kon ,  Mamoru Ishizaki ,  Norimasa Sekine

发明人： Manabu Ito ,  Masato Kon ,  Mamoru Ishizaki ,  Norimasa Sekine

IPC分类号： H01L21/16

CPC分类号： H01L29/7869 ,  H01L29/78603

摘要： A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure.

摘要翻译： 公开了具有晶体管的结构，其包括衬底，衬底上的阻气层和阻气层上的晶体管。 晶体管可以包括氧化物半导体层。 氧化物半导体层可以包括In-Ga-Zn-O。 诸如液晶显示器的显示器可以具有这样的结构。

公开(公告)号：US07768008B2

公开(公告)日：2010-08-03

申请号：US11985235

申请日：2007-11-13

申请人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

发明人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

IPC分类号： H01L33/00

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969

摘要： One embodiment of the present invention is a thin film transistor including a gate electrode formed on an insulating substrate, a gate insulator formed on the gate electrode, a drain electrode and a source electrode formed on the gate insulator, an oxide semiconductor pattern formed between the drain electrode and the source electrode, and a sealing layer formed on the oxide semiconductor pattern.

摘要翻译： 本发明的一个实施例是一种薄膜晶体管，其包括形成在绝缘基板上的栅极电极，形成在栅电极上的栅极绝缘体，形成在栅极绝缘体上的漏电极和源电极，形成在栅绝缘体之间的氧化物半导体图案 漏电极和源电极，以及形成在氧化物半导体图案上的密封层。

公开(公告)号：US07741643B2

公开(公告)日：2010-06-22

申请号：US12075873

申请日：2008-03-13

申请人： Chihiro Miyazaki ,  Manabu Ito

发明人： Chihiro Miyazaki ,  Manabu Ito

IPC分类号： H01L29/94

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78609

摘要： One embodiment of the present invention is a thin film transistor, including: an insulating substrate; a gate electrode, a gate insulating layer and a semiconductor layer including an oxide, these three elements being formed over the insulating substrate in this order, and the gate insulating layer including: a lower gate insulating layer, the lower gate insulating layer being in contact with the insulating substrate and being an oxide including any one of the elements In, Zn or Ga; and an upper gate insulating layer provided on the lower gate insulating layer, the upper gate insulating layer comprising at least one layer; and a source electrode and a drain electrode formed on the semiconductor layer.

摘要翻译： 本发明的一个实施例是薄膜晶体管，包括：绝缘基板; 栅极电极，栅极绝缘层和包括氧化物的半导体层，这三个元素依次形成在绝缘基板上，并且栅极绝缘层包括：下部栅极绝缘层，下部栅极绝缘层接触 具有绝缘基板并且是包括元素In，Zn或Ga中的任何一种的氧化物; 以及设置在所述下栅绝缘层上的上栅极绝缘层，所述上栅绝缘层包括至少一层; 以及形成在半导体层上的源电极和漏电极。

公开(公告)号：US20090294808A1

公开(公告)日：2009-12-03

申请号：US12132511

申请日：2008-06-03

申请人： Manabu Ito

发明人： Manabu Ito

IPC分类号： H01L29/417 ,  H01L21/00

CPC分类号： H01L27/1225 ,  H01L21/67132 ,  H01L27/1218 ,  H01L27/1262 ,  H01L29/78603 ,  H01L29/7869

摘要： One embodiment of the present invention is a method for manufacturing a bottom gate type thin film transistor having a gate electrode, a gate insulating film, an oxide semiconductor active layer, a source electrode and a drain electrode on a flexible plastic substrate of a supporting substrate, the method including continuously forming the gate insulating film and the oxide semiconductor active layer on the flexible plastic substrate with the gate electrode inside a vacuum film formation chamber of a film formation apparatus, the apparatus being a type of winding up continuously the roll-shaped substrate, and the gate insulating film and the oxide semiconductor active layer formed without being exposed to air.

摘要翻译： 本发明的一个实施例是一种制造底栅型薄膜晶体管的方法，该晶体管在支撑衬底的柔性塑料衬底上具有栅极，栅极绝缘膜，氧化物半导体有源层，源电极和漏电极 所述方法包括在所述柔性塑料基板上连续形成所述栅极绝缘膜和所述氧化物半导体活性层，所述栅电极在成膜装置的真空成膜室内，所述装置是连续卷绕所述辊状 衬底，并且栅极绝缘膜和氧化物半导体活性层形成而不暴露于空气。

公开(公告)号：US20080129195A1

公开(公告)日：2008-06-05

申请号：US11999141

申请日：2007-12-03

申请人： Mamoru Ishizaki ,  Norimasa Sekine ,  Manabu Ito ,  Eiichi Kitazume

发明人： Mamoru Ishizaki ,  Norimasa Sekine ,  Manabu Ito ,  Eiichi Kitazume

IPC分类号： H01L51/54 ,  C09K11/00

CPC分类号： H01L27/322

摘要： One embodiment of the present invention is a color EL display characterized in that at least color filters, a thin film transistor circuit, an organic EL layer, and a common electrode are laminated in this order on a transparent substrate. Another embodiment of the invention is a method for producing a color EL display comprising the steps of forming color filters or a transparent substrate; forming a thin film transistor circuit; forming an organic EL layer; and forming a common electrode, wherein process temperatures of the steps of forming the thin film transistor circuit and subsequent steps are 200° C. or less.

摘要翻译： 本发明的一个实施例是彩色EL显示器，其特征在于至少滤色器，薄膜晶体管电路，有机EL层和公共电极依次层叠在透明基板上。 本发明的另一实施例是一种彩色EL显示器的制造方法，包括以下步骤：形成滤色器或透明基板; 形成薄膜晶体管电路; 形成有机EL层; 并形成公共电极，其中形成薄膜晶体管电路和后续步骤的步骤的工艺温度为200℃或更低。

公开(公告)号：US20080033312A1

公开(公告)日：2008-02-07

申请号：US11628159

申请日：2005-05-31

申请人： Kenji Nakai ,  Kohei Kawazoe ,  Koichiro Kobayashi ,  Manabu Ito ,  Yoahihiko Nakamura ,  Takayuki Shimizu ,  Masahito Yoshizawa

发明人： Kenji Nakai ,  Kohei Kawazoe ,  Koichiro Kobayashi ,  Manabu Ito ,  Yoahihiko Nakamura ,  Takayuki Shimizu ,  Masahito Yoshizawa

IPC分类号： A61B5/05

CPC分类号： A61B5/04007 ,  A61B5/04 ,  A61B5/0402 ,  A61B5/05 ,  A61B5/055 ,  A61B5/4519 ,  A61B6/503

摘要： A cardiac magnetic field diagnostic apparatus for evaluating intracardiac three-dimensional localization of a myocardial injury by means of cardiac magnetic field measurement and a three-dimensional localization evaluating method of myocardial injury are disclosed. A magnetic field distribution measuring instrument (1) creates magnetic field distribution data by contactless magnetic field measurement on coordinates on the breast of a subject. An arithmetic operation unit (2) computers intracardiac three-dimensional current density distribution data from the magnetic field distribution data, draws a magnetic field integral cubic diagram as a cardiac contour cubic diagram according to the three-dimensional current density distribution data, creates data to draw the three-dimensional distribution of the QRS difference, the T-wave vector, or the RT dispersion of the same subject according to the three-dimensional current density distribution data, and reconstructs it on the cardiac contour. With this, evaluation of three-dimensional localization of a myocardial injury is possible.

摘要翻译： 公开了一种用于通过心脏磁场测量和心肌损伤的三维定位评估方法来评价心肌损伤的心内三维定位的心脏磁场诊断装置。 磁场分布测量仪器（1）通过无源磁场测量产生磁场分布数据，用于对象的乳房上的坐标。 算术运算单元（2）根据磁场分布数据计算心室内三维电流密度分布数据，根据三维电流密度分布数据绘制磁场积分立方图作为心脏轮廓立方图，创建数据 根据三维电流密度分布数据绘制QRS差，T波矢量或同一受试者的RT色散的三维分布，并在心脏轮廓上重建。 由此，对心肌损伤的三维定位的评价是可能的。

公开(公告)号：US20070240795A1

公开(公告)日：2007-10-18

申请号：US11785065

申请日：2007-04-13

申请人： Motonori Sato ,  Poong Kim ,  Manabu Ito ,  Tadashi Masuda

发明人： Motonori Sato ,  Poong Kim ,  Manabu Ito ,  Tadashi Masuda

IPC分类号： C22F1/18

CPC分类号： C22F1/18 ,  C23C14/3414

摘要： A method for producing a Ta sputtering target including the following steps: (a) a step of forging a Ta ingot, comprising subjecting the Ta ingot to a forging pattern over at least 3 times, wherein each forging pattern is “a cold forging step comprising stamp-forging and upset-forging operations alternatively repeated over at least 3 times; (b) an in-process vacuum heat-treating step carried out between every successive two forging patterns to thus prepare a Ta billet; (c) a step of rolling the Ta billet to obtain a rolled plate; and (d) a step of vacuum heat-treating the rolled plate to obtain a Ta sputtering target. A sputtering target produced by the above method.

摘要翻译： 一种制造Ta溅射靶的方法，包括以下步骤：（a）锻造Ta锭的步骤，包括使Ta锭经历至少3次的锻造图案，其中每个锻造图案是“包括 冲压锻造和锻造操作交替重复至少3次;（b）在每个连续的两个锻造图案之间进行的在工艺真空热处理步骤，从而制备Ta钢坯;（c）轧制步骤 所述Ta钢坯得到轧制板;（d）对所述轧制板进行真空热处理以获得Ta溅射靶的工序，通过上述方法制造溅射靶。

公开(公告)号：US20050082377A1

公开(公告)日：2005-04-21

申请号：US10946890

申请日：2004-09-22

申请人： Hiroshi Kato ,  Manabu Ito ,  Takeshi Uchida

发明人： Hiroshi Kato ,  Manabu Ito ,  Takeshi Uchida

IPC分类号： H03B5/32 ,  G05D23/19 ,  H03B5/04 ,  H03B5/36 ,  H05K1/02 ,  H05K1/18 ,  H05K3/30 ,  G05D15/00 ,  F25D23/12 ,  G05D23/00

CPC分类号： H05K1/0201 ,  G05D23/19 ,  H03B5/04 ,  H03B5/36 ,  H05K1/181 ,  H05K3/301 ,  H05K2201/10022 ,  H05K2201/10068 ,  H05K2201/10151 ,  H05K2201/10515 ,  H05K2201/10606

摘要： To provide a highly stable crystal oscillator having increased thermal efficiency. The highly stable crystal oscillator comprises; a thermostat mainframe which maintains the temperature of a crystal resonator including a resonator container for sealing a crystal piece constant, an oscillating element which constitutes an oscillation circuit together with said crystal resonator, a temperature control element which controls the temperature inside of said thermostat mainframe, and a circuit board mounted with said thermostat mainframe, said oscillating element, and said temperature control element. The construction is such that a heat generating chip resistor and a highly heat sensitive element having a higher temperature dependency, among said oscillating element and said temperature control element, are arranged on one principal plane of said circuit board, and said heat generating chip resistor, said highly heat sensitive element, and said thermostat mainframe are directly heat bonded by a thermo-conductive material.

摘要翻译： 提供具有增加的热效率的高度稳定的晶体振荡器。 高度稳定的晶体振荡器包括： 恒温器主机，其保持包括用于密封晶体片的谐振器容器的晶体谐振器的温度，与所述晶体谐振器一起构成振荡电路的振荡元件，控制所述恒温器主机内部的温度的温度控制元件， 以及安装有所述恒温器主机，所述振荡元件和所述温度控制元件的电路板。 该结构使得在所述振荡元件和所述温度控制元件之中具有较高温度依赖性的发热芯片电阻器和高热敏元件被布置在所述电路板的一个主平面上，并且所述发热芯片电阻器， 所述高热敏元件，并且所述恒温器主机通过热导材料直接热粘合。