公开(公告)号：US07406562B2

公开(公告)日：2008-07-29

申请号：US11401724

申请日：2006-04-10

申请人： Hideki Saga ,  Motoyasu Tsunoda ,  Terumi Takashi

发明人： Hideki Saga ,  Motoyasu Tsunoda ,  Terumi Takashi

IPC分类号： G06F13/00

CPC分类号： G06F3/0659 ,  G06F3/0625 ,  G06F3/0626 ,  G06F3/0658 ,  G06F3/0676 ,  G11B20/10 ,  Y02D10/154

摘要： An information read/write device has a first processor for instructing a second processor to write information onto or read information from a recording medium. The recording medium has a random access memory module which allows both processors to read or write data to the memory module. The second processor controls a scanning module for the recording medium, a write signal processing module and a read signal processing module. The read/write device is easy-to-operate while using a minimum of electric power consumption with prevention against electromagnetic interference (EMI) making the invention suitable for use in hand-held devices.

摘要翻译： 信息读/写设备具有第一处理器，用于指示第二处理器将信息写入或从记录介质读取信息。 记录介质具有随机存取存储器模块，其允许两个处理器将数据读取或写入存储器模块。 第二处理器控制用于记录介质的扫描模块，写入信号处理模块和读取信号处理模块。 读/写设备易于操作，同时使用最小的电力消耗，防止电磁干扰（EMI），使本发明适用于手持设备。

公开(公告)号：US20060236024A1

公开(公告)日：2006-10-19

申请号：US11401724

申请日：2006-04-10

申请人： Hideki Saga ,  Motoyasu Tsunoda ,  Terumi Takashi

发明人： Hideki Saga ,  Motoyasu Tsunoda ,  Terumi Takashi

IPC分类号： G06F12/00

CPC分类号： G06F3/0659 ,  G06F3/0625 ,  G06F3/0626 ,  G06F3/0658 ,  G06F3/0676 ,  G11B20/10 ,  Y02D10/154

摘要： Embodiments of the invention provide an easy-to-operate information read/write device that operates with minimum electric power consumption, has an excellent prevention effect against EMI, is small in weight and in physical size, and is particularly suitable for use in hand-held devices. In one embodiment, an information read/write device having a processor A to control a scanning module for a recording medium, a write signal processing module, and a read signal processing module, and a processor B for instructing the processor A to write information onto or read information from the recording medium, is further provided with a memory module which is random-accessible from the processors A and B and into which the information to be written or read is stored.

摘要翻译： 本发明的实施例提供了一种易于操作的信息读/写装置，其以最小的电力消耗进行操作，具有优异的防EMI效果，重量轻和物理尺寸小，特别适用于手持式 手持设备。 在一个实施例中，具有控制用于记录介质的扫描模块的处理器A，写入信号处理模块和读取信号处理模块的信息读取/写入装置以及用于指示处理器A将信息写入到 或从记录介质读取信息，还具有存储器模块，该存储器模块可从处理器A和B随机存取并存储要写入或读取的信息。

公开(公告)号：US20060114726A1

公开(公告)日：2006-06-01

申请号：US11330233

申请日：2006-01-12

申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G11C16/04 ,  G11C7/10

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

公开(公告)号：US20050128627A1

公开(公告)日：2005-06-16

申请号：US11044298

申请日：2005-01-28

申请人： Kyo Akagi ,  Takashi Yamaguchi ,  Koki Uefune ,  Motoyasu Tsunoda ,  Atsushi Saito

发明人： Kyo Akagi ,  Takashi Yamaguchi ,  Koki Uefune ,  Motoyasu Tsunoda ,  Atsushi Saito

IPC分类号： G11B5/00 ,  G11B5/012 ,  G11B17/04 ,  G11B19/04 ,  G11B15/48 ,  G11B21/02

CPC分类号： G11B5/012 ,  G11B17/0402 ,  G11B17/0407 ,  G11B19/04 ,  G11B2005/001

摘要： A magnetic disk apparatus has: a magnetic disk having a magnetic film formed on a substrate; a spindle motor for rotating the magnetic disk; a magnetic head for writing/reading information on/from the magnetic disk; a supporting member for supporting the magnetic head; a driving mechanism for moving the magnetic head to a predetermined position on the magnetic disk; a magnetic writing/reading circuit for enabling the magnetic head to write/read information on/from the magnetic disk; an interface for sending/receiving signals for controlling the information to/from another information processing device, a device for detecting whether or not the magnetic disk apparatus is in operation; and mechanism for latching movable part of the magnetic disk apparatus on the basis of detection result of the detecting device.

摘要翻译： 磁盘装置具有：在基板上形成有磁性膜的磁盘; 用于旋转磁盘的主轴电机; 用于在/从磁盘读/写信息的磁头; 用于支撑磁头的支撑构件; 用于将磁头移动到磁盘上的预定位置的驱动机构; 用于使磁头能够从/从磁盘写入/读取信息的磁性写入/读取电路; 用于发送/接收用于将信息控制到另一个信息处理装置的信号的接口，用于检测磁盘装置是否正在运行的装置; 以及基于检测装置的检测结果来锁定磁盘装置的可动部的机构。

公开(公告)号：US20050007860A1

公开(公告)日：2005-01-13

申请号：US10914363

申请日：2004-08-10

申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G06F12/16 ,  G06F12/02 ,  G11C16/02 ,  G11C16/06 ,  G11C16/34 ,  G11C29/00 ,  G11C29/42 ,  G11C8/00

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

摘要翻译： 对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏，系统无法运行的异常状态。 非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量 的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

公开(公告)号：US06687072B2

公开(公告)日：2004-02-03

申请号：US09801846

申请日：2001-03-09

申请人： Atsushi Okuyama ,  Kyo Akagi ,  Takashi Yamaguchi ,  Motoyasu Tsunoda

发明人： Atsushi Okuyama ,  Kyo Akagi ,  Takashi Yamaguchi ,  Motoyasu Tsunoda

IPC分类号： G11B502

CPC分类号： G11B27/34 ,  G11B5/012 ,  G11B20/10 ,  G11B27/36 ,  G11B2220/20

摘要： A magnetic disk apparatus includes a requesting unit for requesting the magnetic disk apparatus to re-set a value of specification information capable of determining performance of the magnetic disk apparatus in combination with either identification result or flag information; a performance unit for causing the magnetic disk apparatus which receives the request to re-set the own specification; a detecting unit for detecting an internal condition of the disk apparatus; a processing unit for processing the detection result; a conversion unit for converting the internal condition of the magnetic disk apparatus into states of a numeral value, a figure, a color, and a sound in combination with the process result, and for notifying the converted condition to a user; and a battery.

摘要翻译： 磁盘装置包括：请求单元，用于请求磁盘装置重新设置能够与识别结果或标志信息相结合的能够确定磁盘装置的性能的指定信息的值; 执行单元，用于使接收到所述请求的磁盘装置重新设置自己的规格; 检测单元，用于检测盘装置的内部状态; 用于处理检测结果的处理单元; 转换单元，用于结合处理结果将磁盘装置的内部状态转换成数字值，图形，颜色和声音的状态，并将转换的条件通知给用户; 和电池。

公开(公告)号：US08850128B2

公开(公告)日：2014-09-30

申请号：US12646726

申请日：2009-12-23

申请人： Frank R. Chu ,  Spencer W. Ng ,  Motoyasu Tsunoda ,  Marco Sanvido

发明人： Frank R. Chu ,  Spencer W. Ng ,  Motoyasu Tsunoda ,  Marco Sanvido

IPC分类号： G06F12/10 ,  G06F3/06

CPC分类号： G06F3/0658 ,  G06F3/0626 ,  G06F3/0635 ,  G06F3/068

摘要： A method for implementing data storage and a dual port, dual element storage device are provided. A storage device includes a predefined form factor including a first port and a second port, and a first storage element and a second storage element. A controller coupled between the first port and second port, and the first storage element and second storage element controls access and provides two separate data paths to the first storage element and second storage element.

摘要翻译： 提供了实现数据存储的方法和双端口双元素存储设备。 存储装置包括预定义的形状因子，包括第一端口和第二端口，以及第一存储元件和第二存储元件。 耦合在第一端口和第二端口之间的控制器，并且第一存储元件和第二存储元件控制访问，并且提供到第一存储元件和第二存储元件的两个单独的数据路径。

公开(公告)号：US07817480B2

公开(公告)日：2010-10-19

申请号：US12409386

申请日：2009-03-23

申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G11C5/14

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

摘要翻译： 对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏，系统无法运行的异常状态。 非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量 的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

公开(公告)号：US07366034B2

公开(公告)日：2008-04-29

申请号：US11797842

申请日：2007-05-08

申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G11C7/10

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

摘要翻译： 对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏，系统无法运行的异常状态。 非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量 的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

公开(公告)号：US07350023B2

公开(公告)日：2008-03-25

申请号：US11636629

申请日：2006-12-11

申请人： Nagamasa Mizushima ,  Takashi Tsunehiro ,  Motoyasu Tsunoda ,  Toshio Tanaka ,  Kunihiro Katayama ,  Koichi Kimura ,  Tomihisa Hatano

发明人： Nagamasa Mizushima ,  Takashi Tsunehiro ,  Motoyasu Tsunoda ,  Toshio Tanaka ,  Kunihiro Katayama ,  Koichi Kimura ,  Tomihisa Hatano

IPC分类号： G06F12/00

CPC分类号： G06K7/0021 ,  G06F21/602 ,  G06K7/0047 ,  G06K19/07732

摘要： A memory device is provided which is connected to operate with power and clocks supplied from a host apparatus. The memory device includes external terminals, a flash memory chip to store data, an IC chip to process data; and a controller chip connected with the external terminals, the flash memory chip and the IC chip, wherein, the flash memory chip, the IC chip and the controller chip are discrete chips. The controller chip writes data inputted from the host apparatus into the flash memory chip or the IC chip and transfers data read from the flash memory chip or the IC chip to the host apparatus, based upon commands from the host apparatus.

摘要翻译： 提供了一种存储装置，其连接用于从主机装置提供的电源和时钟进行操作。 存储器件包括外部端子，存储数据的闪存芯片，处理数据的IC芯片; 以及与外部端子，闪存芯片和IC芯片连接的控制器芯片，其中，闪存芯片，IC芯片和控制器芯片是分立芯片。 控制器芯片根据主机装置的命令将从主机装置输入的数据写入闪存芯片或IC芯片，并将从闪存芯片或IC芯片读取的数据传送到主机装置。