Beltless tandem-type image forming apparatus
    21.
    发明授权
    Beltless tandem-type image forming apparatus 有权
    无级串联式图像形成装置

    公开(公告)号:US08115796B2

    公开(公告)日:2012-02-14

    申请号:US12388075

    申请日:2009-02-18

    摘要: In a beltless tandem-type image forming apparatus, a plurality of pairs of transfer rollers are placed side by side at intervals along a conveying direction of sheets. A control section independently conveys sheets in sequence through nip sections of respective pairs of transfer rollers driven by a driving section while sequentially transferring images formed by an imaging section onto the sheets. Conveying speeds of the respective pairs of transfer rollers controlled by the driving section are gradually decreased for every pair of transfer rollers from an upstream side toward a downstream side along a conveying direction of the sheets, and consequently, a driving period for driving the respective pairs of transfer rollers to convey each sheet is gradually increased for every pair of transfer rollers from the upstream side toward the downstream side along the conveying direction of the sheets.

    摘要翻译: 在无带式串联式图像形成装置中,沿着纸张的输送方向间隔地并排设置多对传送辊。 控制部分依次通过由驱动部分驱动的各对转印辊的辊隙部分顺序地输送纸张,同时顺序地将由成像部分形成的图像转印到纸张上。 由驱动部控制的各对转印辊的输送速度,对于每对转印辊,沿着纸张的输送方向从上游侧向下游侧逐渐降低,因此,驱动各对的驱动期间 沿着纸张的输送方向从上游侧向下游侧的每对转印辊逐渐增加用于输送每张纸的转印辊。

    ORGANIC ELECTROLUMINESCENCE ELEMENT AND LIGHT-EMITTING APPARATUS HAVING THE SAME
    22.
    发明申请
    ORGANIC ELECTROLUMINESCENCE ELEMENT AND LIGHT-EMITTING APPARATUS HAVING THE SAME 审中-公开
    有机电致发光元件及其发光装置

    公开(公告)号:US20110215367A1

    公开(公告)日:2011-09-08

    申请号:US13038233

    申请日:2011-03-01

    IPC分类号: H01L51/52

    CPC分类号: H01L51/52

    摘要: An organic EL element has a substrate, a first electrode, an organic compound layer, and a second electrode. The second electrode has a base layer and a metal layer, and light generated in this organic EL element is transmitted through the second electrode. The base layer is closer to the substrate than the metal layer and is a mixed layer containing lithium, oxygen, and magnesium, whereas the metal layer contains silver and has a thickness in the range of 5.0 to 20 nm, inclusive.

    摘要翻译: 有机EL元件具有基板,第一电极,有机化合物层和第二电极。 第二电极具有基底层和金属层,并且在该有机EL元件中产生的光被透过第二电极。 基底层比金属层更靠近基板,是含有锂,氧,镁的混合层,金属层含有银,厚度在5.0〜20nm的范围内。

    Semiconductor device with extension structure and method for fabricating the same
    23.
    发明授权
    Semiconductor device with extension structure and method for fabricating the same 有权
    具有延伸结构的半导体器件及其制造方法

    公开(公告)号:US07989903B2

    公开(公告)日:2011-08-02

    申请号:US12757658

    申请日:2010-04-09

    IPC分类号: H01L21/02

    摘要: A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extension region and drain extension region are formed in a surface portion of the semiconductor region. The first gate insulation film is formed on the semiconductor region between the source extension region and the drain extension region. The first gate insulation film is formed of a silicon oxide film or a silicon oxynitride film having a nitrogen concentration of 15 atomic % or less. The second gate insulation film is formed on the first gate insulation film and contains nitrogen at a concentration of between 20 atomic % and 57 atomic %. The gate electrode is formed on the second gate insulation film.

    摘要翻译: 半导体器件包括半导体区域,源极区域,漏极区域,源极延伸区域,漏极延伸区域,第一栅极绝缘膜,第二栅极绝缘膜和栅极电极。 源极区域,漏极区域,源极延伸区域和漏极延伸区域形成在半导体区域的表面部分中。 第一栅极绝缘膜形成在源极延伸区域和漏极延伸区域之间的半导体区域上。 第一栅极绝缘膜由氮浓度为15原子%以下的氧化硅膜或氮氧化硅膜形成。 第二栅极绝缘膜形成在第一栅极绝缘膜上,并且含有浓度为20原子%至57原子%之间的氮。 栅电极形成在第二栅绝缘膜上。

    IMAGE FORMING DEVICE AND IMAGE FORMING METHOD
    25.
    发明申请
    IMAGE FORMING DEVICE AND IMAGE FORMING METHOD 有权
    图像形成装置和图像形成方法

    公开(公告)号:US20110102489A1

    公开(公告)日:2011-05-05

    申请号:US12912815

    申请日:2010-10-27

    IPC分类号: B41J29/38

    摘要: An image forming device forms an image on a recording sheet by bidirectional recording. In the image forming device, a control part controls the image forming device. The control part includes a distance changing part that changes a sheet transporting distance for transporting the recording sheet after a forward movement of a recording head to a first transport distance and changes a sheet transporting distance for transporting the recording sheet after a backward movement of the recording head to a second transport distance, and a nozzle changing part that determines inactive nozzles which do not discharge a recording liquid among nozzles of the recording head alternately for one of the forward movement and the backward movement of the recording head.

    摘要翻译: 图像形成装置通过双向记录在记录纸上形成图像。 在图像形成装置中,控制部控制图像形成装置。 控制部分包括距离改变部分,其改变在记录头向前移动到第一传送距离之后传送记录纸张的纸张传送距离,并且在记录的向后移动之后改变用于传送记录纸张的纸张传送距离 头部到第二传送距离,以及喷嘴改变部分,其用于确定记录头的喷嘴之间不会对记录头的喷嘴之间排出记录液体的非活动喷嘴,用于记录头的向前移动和向后移动中的一个。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    27.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    半导体器件及制造半导体器件的方法

    公开(公告)号:US20110001170A1

    公开(公告)日:2011-01-06

    申请号:US12822562

    申请日:2010-06-24

    IPC分类号: H01L29/04 H01L21/336

    摘要: A semiconductor device according to the embodiment includes an element region provided with a transistor, a plurality of mixed crystal layers, a drain electrode and a source electrode, an element isolation layer and a dummy pattern. The mixed crystal layers are the layers made of a first atom composing the semiconductor substrate and a second atom having a lattice constant different from the lattice constant of the first atom and formed on both ends of a region, which becomes a channel of the transistor. The dummy pattern is a layer made of the same material as the mixed crystal layers and formed to extend on the surface of the semiconductor substrate and outside of the element region such that a major direction thereof is different from a direction of the semiconductor.

    摘要翻译: 根据实施例的半导体器件包括设置有晶体管,多个混晶层,漏电极和源电极,元件隔离层和虚设图案的元件区域。 混合晶体层是由构成半导体衬底的第一原子构成的层和具有不同于第一原子的晶格常数的晶格常数的第二原子,并形成在晶体管的沟道的区域的两端。 虚拟图案是由与混合晶体层相同的材料制成的层,并且形成为在半导体衬底的表面上延伸并且在元件区域的外部,使得其主要方向不同于半导体的<110>方向 。

    Semiconductor device and method of manufacturing the same
    29.
    发明申请
    Semiconductor device and method of manufacturing the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号:US20100055859A1

    公开(公告)日:2010-03-04

    申请号:US12591085

    申请日:2009-11-06

    IPC分类号: H01L21/336 H01L21/425

    摘要: Disclosed is a method for manufacturing a semiconductor device comprising implanting ions of an impurity element into a semiconductor region, implanting, into the semiconductor region, ions of a predetermined element which is a group IV element or an element having the same conductivity type as the impurity element and larger in mass number than the impurity element, and irradiating a region into which the impurity element and the predetermined element are implanted with light to anneal the region, the light having an emission intensity distribution, a maximum point of the distribution existing in a wavelength region of not more than 600 nm.

    摘要翻译: 公开了一种制造半导体器件的方法,包括将杂质元素的离子注入到半导体区域中,将作为IV族元素的预定元素或与杂质相同的导电类型的元素的离子注入半导体区域 元素,并且质量数大于杂质元素,并且用光照射杂质元素和预定元素被注入的区域以使该区域退火,该光具有发光强度分布,存在于a的分布的最大点 波长区域不大于600nm。

    Secure processing device, method and program
    30.
    发明授权
    Secure processing device, method and program 有权
    安全处理设备,方法和程序

    公开(公告)号:US07650515B2

    公开(公告)日:2010-01-19

    申请号:US12160281

    申请日:2007-02-02

    IPC分类号: G06F11/30 G06F12/14

    CPC分类号: H04L9/3236 H04L2209/603

    摘要: A secure processing device having a power saving mode, which is used for built-in apparatuses, calculates a hash value of secure data that needs to be saved when switching to the power saving mode, stores the calculated hash value in a protection storage unit whose data is not lost even in the power saving mode, encrypts the secure data and stores the encrypted data in an external memory when switching to the power saving mode. When switching back to the normal power mode, the secure processing device decrypts the encrypted data, calculates a hash value of the decrypted data and compares the hash value with the hash value stored in the protection storage unit. The decrypted data is restored to the protection storage unit when the hash values are identical, but discarded together with the encrypted data stored in the external memory when the hash values are not identical.

    摘要翻译: 具有省电模式的安全处理装置,用于内置装置,计算切换到省电模式时需要保存的安全数据的哈希值,将计算出的散列值存储在保护存储部中, 即使在省电模式下数据也不会丢失,在切换到省电模式时,加密安全数据并将加密数据存储在外部存储器中。 当切换回正常功率模式时,安全处理装置解密加密数据,计算解密数据的散列值,并将哈希值与存储在保护存储单元中的散列值进行比较。 当哈希值相同时,解密的数据被恢复到保护存储单元,但是当哈希值不相同时,被解密的数据与存储在外部存储器中的加密数据一起被丢弃。