摘要:
In a beltless tandem-type image forming apparatus, a plurality of pairs of transfer rollers are placed side by side at intervals along a conveying direction of sheets. A control section independently conveys sheets in sequence through nip sections of respective pairs of transfer rollers driven by a driving section while sequentially transferring images formed by an imaging section onto the sheets. Conveying speeds of the respective pairs of transfer rollers controlled by the driving section are gradually decreased for every pair of transfer rollers from an upstream side toward a downstream side along a conveying direction of the sheets, and consequently, a driving period for driving the respective pairs of transfer rollers to convey each sheet is gradually increased for every pair of transfer rollers from the upstream side toward the downstream side along the conveying direction of the sheets.
摘要:
An organic EL element has a substrate, a first electrode, an organic compound layer, and a second electrode. The second electrode has a base layer and a metal layer, and light generated in this organic EL element is transmitted through the second electrode. The base layer is closer to the substrate than the metal layer and is a mixed layer containing lithium, oxygen, and magnesium, whereas the metal layer contains silver and has a thickness in the range of 5.0 to 20 nm, inclusive.
摘要:
A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extension region and drain extension region are formed in a surface portion of the semiconductor region. The first gate insulation film is formed on the semiconductor region between the source extension region and the drain extension region. The first gate insulation film is formed of a silicon oxide film or a silicon oxynitride film having a nitrogen concentration of 15 atomic % or less. The second gate insulation film is formed on the first gate insulation film and contains nitrogen at a concentration of between 20 atomic % and 57 atomic %. The gate electrode is formed on the second gate insulation film.
摘要:
A method to allow programs running within the application space of a device with a secure processor and a trusted computing base to flexibly use certificates that describe the required system state. An information processing device including PSC database (1112), Component and PSC Map (1202), and OS support (1200).
摘要:
An image forming device forms an image on a recording sheet by bidirectional recording. In the image forming device, a control part controls the image forming device. The control part includes a distance changing part that changes a sheet transporting distance for transporting the recording sheet after a forward movement of a recording head to a first transport distance and changes a sheet transporting distance for transporting the recording sheet after a backward movement of the recording head to a second transport distance, and a nozzle changing part that determines inactive nozzles which do not discharge a recording liquid among nozzles of the recording head alternately for one of the forward movement and the backward movement of the recording head.
摘要:
Provided are a novel fused polycyclic aromatic compound having a fluoranthene skeleton and an organic light emitting device having high efficiency and high durability. The organic light emitting device includes a fused polycyclic aromatic compound represented by the following general formula [1] or [2], and the organic light emitting device includes an anode, a cathode, an organic compound layer interposed between the anode and the cathode, in which at least one layer of the organic compound layers includes at least one kind of the fused polycyclic aromatic compound represented by the following general formula [1] or [2].
摘要:
A semiconductor device according to the embodiment includes an element region provided with a transistor, a plurality of mixed crystal layers, a drain electrode and a source electrode, an element isolation layer and a dummy pattern. The mixed crystal layers are the layers made of a first atom composing the semiconductor substrate and a second atom having a lattice constant different from the lattice constant of the first atom and formed on both ends of a region, which becomes a channel of the transistor. The dummy pattern is a layer made of the same material as the mixed crystal layers and formed to extend on the surface of the semiconductor substrate and outside of the element region such that a major direction thereof is different from a direction of the semiconductor.
摘要:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition including (P) a resin which contains (A) a repeating unit having an ionic structure moiety capable of producing an acid anion on the side chain upon irradiation with an actinic ray or radiation, wherein a cation moiety of the ionic structure moiety has an acid-decomposable group or an alkali-decomposable group.
摘要:
Disclosed is a method for manufacturing a semiconductor device comprising implanting ions of an impurity element into a semiconductor region, implanting, into the semiconductor region, ions of a predetermined element which is a group IV element or an element having the same conductivity type as the impurity element and larger in mass number than the impurity element, and irradiating a region into which the impurity element and the predetermined element are implanted with light to anneal the region, the light having an emission intensity distribution, a maximum point of the distribution existing in a wavelength region of not more than 600 nm.
摘要:
A secure processing device having a power saving mode, which is used for built-in apparatuses, calculates a hash value of secure data that needs to be saved when switching to the power saving mode, stores the calculated hash value in a protection storage unit whose data is not lost even in the power saving mode, encrypts the secure data and stores the encrypted data in an external memory when switching to the power saving mode. When switching back to the normal power mode, the secure processing device decrypts the encrypted data, calculates a hash value of the decrypted data and compares the hash value with the hash value stored in the protection storage unit. The decrypted data is restored to the protection storage unit when the hash values are identical, but discarded together with the encrypted data stored in the external memory when the hash values are not identical.