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    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20110001170A1

    公开(公告)日：2011-01-06

    申请号：US12822562

    申请日：2010-06-24

    申请人： Takayuki Ito ,  Kunihiro Miyazaki ,  Kiyotaka Miyano

    发明人： Takayuki Ito ,  Kunihiro Miyazaki ,  Kiyotaka Miyano

    IPC分类号： H01L29/04 ,  H01L21/336

    CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L29/045 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7848

    摘要： A semiconductor device according to the embodiment includes an element region provided with a transistor, a plurality of mixed crystal layers, a drain electrode and a source electrode, an element isolation layer and a dummy pattern. The mixed crystal layers are the layers made of a first atom composing the semiconductor substrate and a second atom having a lattice constant different from the lattice constant of the first atom and formed on both ends of a region, which becomes a channel of the transistor. The dummy pattern is a layer made of the same material as the mixed crystal layers and formed to extend on the surface of the semiconductor substrate and outside of the element region such that a major direction thereof is different from a direction of the semiconductor.

    摘要翻译： 根据实施例的半导体器件包括设置有晶体管，多个混晶层，漏电极和源电极，元件隔离层和虚设图案的元件区域。 混合晶体层是由构成半导体衬底的第一原子构成的层和具有不同于第一原子的晶格常数的晶格常数的第二原子，并形成在晶体管的沟道的区域的两端。 虚拟图案是由与混合晶体层相同的材料制成的层，并且形成为在半导体衬底的表面上延伸并且在元件区域的外部，使得其主要方向不同于半导体的<110>方向 。

    HEAT TREATMENT APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    6.
    发明申请
    HEAT TREATMENT APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    热处理装置及制造半导体器件的方法

    公开(公告)号：US20110034015A1

    公开(公告)日：2011-02-10

    申请号：US12796147

    申请日：2010-06-08

    申请人： Kenichi Yoshino ,  Takayuki Ito ,  Kunihiro Miyazaki

    发明人： Kenichi Yoshino ,  Takayuki Ito ,  Kunihiro Miyazaki

    IPC分类号： H01L21/28 ,  H01L21/26 ,  F27B5/06

    CPC分类号： F27B17/0025 ,  H01L21/268 ,  H01L21/67115 ,  H01L29/6659 ,  H01L29/7833

    摘要： According to one embodiment, a heat treatment apparatus includes a light emitting unit to emit light to irradiate a wafer, a processing unit with a stage section and a control unit. The control unit implements a first irradiation to irradiate the light onto the wafer. After the first irradiation, the control unit changes at least one selected from a disposition of the wafer, a distribution of an intensity of the light on a major surface of the stage section along a circumferential edge direction of the wafer, and a distribution of a temperature of the wafer in a supplemental heating by the stage section along a circumferential edge direction of the wafer. After the changing, the control unit implements a second irradiation to irradiate the light onto the wafer. Durations of the first irradiation and the second irradiation are shorter than a time necessary for the changing.

    摘要翻译： 根据一个实施例，热处理设备包括发射光以照射晶片的发光单元，具有台架部分的处理单元和控制单元。 控制单元执行第一次照射以将光照射到晶片上。 在第一次照射之后，控制单元改变从晶片的布置中选择的至少一种，沿着晶片的周向边缘方向在舞台部分的主表面上的光的强度分布，以及 沿着晶片的周向边缘方向由台阶段进行补充加热时的晶片的温度。 改变之后，控制单元进行第二次照射以将光照射到晶片上。 第一次照射和第二次照射的时间短于变化所需的时间。

    MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND HEAT TREATMENT APPARATUS
    7.
    发明申请
    MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND HEAT TREATMENT APPARATUS 审中-公开
    半导体器件和热处理设备的制造方法

    公开(公告)号：US20100151696A1

    公开(公告)日：2010-06-17

    申请号：US12635411

    申请日：2009-12-10

    申请人： Takayuki ITO ,  Masato Fukumoto ,  Kunihiro Miyazaki

    发明人： Takayuki ITO ,  Masato Fukumoto ,  Kunihiro Miyazaki

    IPC分类号： H01L21/268 ,  B01J19/12

    CPC分类号： H01L21/67115 ,  H01L21/26513 ,  H01L21/2686 ,  H01L21/324

    摘要： A manufacturing method for a semiconductor device, includes, forming an element region on a front surface of a semiconductor substrate, performing a first heat treatment by irradiating first irradiation light having a first irradiation energy density onto the front surface of the semiconductor substrate with a pulse width of 0.1 to 100 msec at the temperature of 1000° C. or less; and performing a second heat treatment by irradiating second irradiation light having a second irradiation energy density onto the surface of the semiconductor substrate with a pulse width of 0.1 to 100 msec at the temperature higher than the temperature in the first heat treatment.

    摘要翻译： 一种半导体装置的制造方法，其特征在于，在半导体基板的前表面形成元件区域，通过用脉冲将第一照射能量密度的第一照射光照射到半导体衬底的前表面进行第一热处理 在1000℃以下的温度下为0.1〜100毫秒的宽度; 并且在比所述第一热处理中的温度高的温度下，以0.1〜100msec的脉冲宽度照射具有第二照射能量密度的第二照射光的第二照射能量密度的第二照射光进行第二热处理。

    System for controlling production of electronic devices, system and method for producing electronic devices, and computer program product
    8.
    发明申请
    System for controlling production of electronic devices, system and method for producing electronic devices, and computer program product 审中-公开
    用于控制电子设备生产的系统，用于生产电子设备的系统和方法以及计算机程序产品

    公开(公告)号：US20070233302A1

    公开(公告)日：2007-10-04

    申请号：US11600791

    申请日：2006-11-17

    申请人： Kunihiro Miyazaki ,  Yoshihiro Ogawa ,  Shoichi Harakawa

    发明人： Kunihiro Miyazaki ,  Yoshihiro Ogawa ,  Shoichi Harakawa

    IPC分类号： G06F19/00

    CPC分类号： G05B19/41865 ,  G05B2219/32097 ,  G05B2219/32275 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/265

    摘要： A system for controlling production of electronic devices includes a recipe creation unit creating a processing recipe describing processing conditions for first and second processes so as to satisfy a production specification of a characteristic and a yield rate of the electronic devices, and an additional recipe describing additional processing conditions determined based on a relation of the characteristic and the yield rate to a latency time between a completion time of the first process and a start time of the second process so as to satisfy the production specification; and a recipe designation module designating the additional recipe for processing of intermediate products of the electronic devices, produced by the first process, when the latency time exceeds a reference.

    摘要翻译： 一种用于控制电子设备生产的系统包括：配方创建单元，其创建描述第一和第二处理的处理条件的处理配方，以满足电子设备的特性和成品率的生产规格，以及描述附加的附加配方 基于特性和产率的关系确定的处理条件与第一处理的完成时间和第二处理的开始时间之间的等待时间以满足生产规范; 以及当延迟时间超过参考时，指定由第一处理产生的电子设备的中间产品的处理的附加配方的配方指定模块。

    Material supply system in semiconductor device manufacturing plant
    9.
    发明申请
    Material supply system in semiconductor device manufacturing plant 失效
    半导体器件制造厂的材料供应系统

    公开(公告)号：US20050177273A1

    公开(公告)日：2005-08-11

    申请号：US10507699

    申请日：2003-03-27

    申请人： Kunihiro Miyazaki ,  Soichi Nadahara ,  Kinya Usuda ,  Masaji Akahori ,  Sota Nakagawa ,  Ken Nakajima

    发明人： Kunihiro Miyazaki ,  Soichi Nadahara ,  Kinya Usuda ,  Masaji Akahori ,  Sota Nakagawa ,  Ken Nakajima

    IPC分类号： H01L21/02 ,  B24B57/02 ,  C11D11/00 ,  C23C16/52 ,  H01L21/00 ,  H01L21/306 ,  G06F19/00

    CPC分类号： H01L21/67276 ,  B24B37/04 ,  B24B57/02 ,  C11D11/0047 ,  C23C16/52 ,  G05B2219/32082 ,  H01L21/02052 ,  Y02P90/20 ,  Y10S210/90

    摘要： In a small scaled plant intended for flexible manufacturing, a pure water supply system is provided at a low cost without reducing a production efficiency. A pure water system produces a plurality of grades of pure water which are supplied through pipes connected to points of use for cleaning, CMP, lithography, and the like. Upon receipt of a request signal from each point of use for starting to use a certain grade of pure water, a controller determines whether or not a required amount exceeds the capacity of the grade of pure water which can be supplied by the pure water system. If not, the controller sends a use permission signal to the point of use for permitting the same to use the pure water. When a certain use point is using the requested grade of pure water, the controller may not permit the requesting point of use to use the pure water until a use end signal is sent from the use point which is using the pure water.

    摘要翻译： 在用于灵活制造的小规模工厂中，以低成本提供纯净水供应系统，而不降低生产效率。 纯水系统产生多个等级的纯水，其通过连接到用于清洁，CMP，光刻等的使用点的管道供应。 一旦控制器收到来自每个使用点的请求信号以开始使用一定等级的纯水，则控制器确定所需量是否超过纯水系统能提供的纯水等级的容量。 如果没有，控制器将使用许可信号发送到使用点，以允许其使用纯净水。 当某个使用点正在使用所要求的纯水量时，控制器可能不允许请求使用点使用纯净水，直到从使用纯水的使用点发出使用结束信号。

    Wafer cleaning method and equipment
    10.
    发明申请
    Wafer cleaning method and equipment 审中-公开
    晶圆清洗方法和设备

    公开(公告)号：US20050081886A1

    公开(公告)日：2005-04-21

    申请号：US10932006

    申请日：2004-09-02

    申请人： Kunihiro Miyazaki ,  Takashi Higuchi ,  Toshiki Nakajima ,  Hiroyuki Matsuo

    发明人： Kunihiro Miyazaki ,  Takashi Higuchi ,  Toshiki Nakajima ,  Hiroyuki Matsuo

    IPC分类号： H01L21/304 ,  C23G1/00 ,  G01N27/06 ,  H01L21/00 ,  H01L21/302

    CPC分类号： H01L21/67057 ,  G01N27/06

    摘要： There is disclosed a wafer cleaning method comprising supplying a cleaning water to a wafer cleaned with a chemical solution, measuring the resistivity of a solution including the chemical solution and cleaning water, and differentiating the measured value with respect to time, and cleaning the wafer continuously with the cleaning water until the time differential value of the resistivity becomes equal to or less than a preset value and is held at that values for preset time.

    摘要翻译： 公开了一种晶片清洗方法，其包括向清洗的化学溶液的晶片提供清洗水，测量包括化学溶液和清洗水的溶液的电阻率，并且相对于时间差分测量值，以及连续清洁晶片 直到电阻率的时间差值等于或小于预设值，并将其保持在该预定时间的值。