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    ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN-FORMING METHOD USING THE SAME
    2.
    发明申请
    ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN-FORMING METHOD USING THE SAME 审中-公开
    化学敏感性或辐射敏感性树脂组合物，耐腐蚀膜和使用其的图案形成方法

    公开(公告)号：US20140127627A1

    公开(公告)日：2014-05-08

    申请号：US13669530

    申请日：2012-11-06

    申请人： Takayuki Ito ,  Hidenori Takahashi ,  Tomotaka Tsuchimura ,  Shohei Kataoka ,  Takeshi Inasaki

    发明人： Takayuki Ito ,  Hidenori Takahashi ,  Tomotaka Tsuchimura ,  Shohei Kataoka ,  Takeshi Inasaki

    IPC分类号： G03F7/004

    CPC分类号： G03F7/004 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20

    摘要： Provided is an actinic ray-sensitive or radiation-sensitive resin composition, a resist film formed with the composition, and a pattern-forming method using the same. The actinic ray-sensitive or radiation-sensitive resin composition includes (P) a resin that contains the following repeating units (A), (B) and (C); and a solvent having a boiling temperature of 150° C. or less, (A) a repeating unit containing a group capable of decomposing and forming an acid upon irradiation with an actinic ray or radiation, (B) a repeating unit containing a group capable of decomposing and forming a carboxylic acid by the action of an acid, and (C) a repeating unit containing a carbon-carbon unsaturated bond.

    摘要翻译： 提供了一种光化射线敏感或辐射敏感性树脂组合物，由该组合物形成的抗蚀剂膜和使用其的图案形成方法。 光化射线敏感性或辐射敏感性树脂组合物包含（P）含有以下重复单元（A），（B）和（C）的树脂; 和沸点为150℃以下的溶剂，（A）含有能够在光化射线或辐射照射时能够分解形成酸的基团的重复单元，（B）含有能够具有基团的重复单元 通过酸的作用分解和形成羧酸，和（C）含有碳 - 碳不饱和键的重复单元。

    Actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern-forming method using the same
    4.
    发明授权
    Actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern-forming method using the same 有权
    光化学敏感性或辐射敏感性树脂组合物，抗蚀剂膜和使用其的图案形成方法

    公开(公告)号：US09223204B2

    公开(公告)日：2015-12-29

    申请号：US13669530

    申请日：2012-11-06

    申请人： Takayuki Ito ,  Hidenori Takahashi ,  Tomotaka Tsuchimura ,  Shohei Kataoka ,  Takeshi Inasaki

    发明人： Takayuki Ito ,  Hidenori Takahashi ,  Tomotaka Tsuchimura ,  Shohei Kataoka ,  Takeshi Inasaki

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/004 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20

    摘要： Provided is an actinic ray-sensitive or radiation-sensitive resin composition, a resist film formed with the composition, and a pattern-forming method using the same. The actinic ray-sensitive or radiation-sensitive resin composition includes (P) a resin that contains the following repeating units (A), (B) and (C); and a solvent having a boiling temperature of 150° C. or less, (A) a repeating unit containing a group capable of decomposing and forming an acid upon irradiation with an actinic ray or radiation, (B) a repeating unit containing a group capable of decomposing and forming a carboxylic acid by the action of an acid, and (C) a repeating unit containing a carbon-carbon unsaturated bond.

    摘要翻译： 提供了一种光化射线敏感或辐射敏感性树脂组合物，由该组合物形成的抗蚀剂膜和使用其的图案形成方法。 光化射线敏感性或辐射敏感性树脂组合物包含（P）含有以下重复单元（A），（B）和（C）的树脂; 和沸点为150℃以下的溶剂，（A）含有能够在光化射线或辐射照射时能够分解形成酸的基团的重复单元，（B）含有能够具有基团的重复单元 通过酸的作用分解和形成羧酸，和（C）含有碳 - 碳不饱和键的重复单元。

    CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION
    7.
    发明申请
    CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION 审中-公开
    化学放大型正电阻组合物，耐蚀膜，电阻涂层掩模和电阻图形使用组合物的方法

    公开(公告)号：US20120202141A1

    公开(公告)日：2012-08-09

    申请号：US13362569

    申请日：2012-01-31

    申请人： Takeshi INASAKI ,  Tomotaka TSUCHIMURA ,  Hiroo TAKIZAWA

    发明人： Takeshi INASAKI ,  Tomotaka TSUCHIMURA ,  Hiroo TAKIZAWA

    IPC分类号： G03F1/78 ,  G03F1/76 ,  G03F1/50 ,  C08F228/02

    CPC分类号： C08F228/02 ,  G03F1/78 ,  G03F7/0045 ,  G03F7/0392

    摘要： The object of the present invention is to solve the technical problems in the microfabrication of photomasks or semiconductors and is, in particular, to provide a chemical amplification type positive resist film, and a resist film, resist coated mask blanks and a method of forming a resist pattern using the composition, which satisfy at the same time all of high sensitivity, high resolution (for example, high resolving power), good exposure latitude (EL), and good line edge roughness (LER).A chemical amplification type positive resist composition comprising: a high molecular compound (A) having a repeating unit represented by the following general formula (1), a repeating unit represented by the following general formula (2), and a repeating unit represented by the following general formula (3).

    摘要翻译： 本发明的目的是解决光掩模或半导体的微细加工中的技术问题，特别是提供化学放大型正性抗蚀剂膜，抗蚀剂膜，抗蚀剂涂布掩模坯料和形成 使用该组合物的抗蚀剂图案，其同时满足高灵敏度，高分辨率（例如，高分辨率），良好的曝光宽容度（EL）和良好的线边缘粗糙度（LER）。 一种化学放大型正型抗蚀剂组合物，其包含：具有由以下通式（1）表示的重复单元的高分子化合物（A），由以下通式（2）表示的重复单元和由以下通式 按照通式（3）。

    ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN-FORMING METHOD USING THE SAME
    8.
    发明申请
    ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN-FORMING METHOD USING THE SAME 有权
    化学敏感性或辐射敏感性树脂组合物，耐腐蚀膜和使用其的图案形成方法

    公开(公告)号：US20100248143A1

    公开(公告)日：2010-09-30

    申请号：US12748728

    申请日：2010-03-29

    申请人： Takayuki ITO ,  Hidenori TAKAHASHI ,  Tomotaka TSUCHIMURA ,  Shohei KATAOKA ,  Takeshi INASAKI

    发明人： Takayuki ITO ,  Hidenori TAKAHASHI ,  Tomotaka TSUCHIMURA ,  Shohei KATAOKA ,  Takeshi INASAKI

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0045 ,  G03F7/0048 ,  G03F7/0392 ,  G03F7/0397

    摘要： Provided is an actinic ray-sensitive or radiation-sensitive resin composition, a resist film formed with the composition, and a pattern-forming method using the same. The actinic ray-sensitive or radiation-sensitive resin composition includes (P) a resin that contains the following repeating units (A), (B) and (C); and a solvent having a boiling temperature of 150° C. or less, (A) a repeating unit containing a group capable of decomposing and forming an acid upon irradiation with an actinic ray or radiation, (B) a repeating unit containing a group capable of decomposing and forming a carboxylic acid by the action of an acid, and (C) a repeating unit containing a carbon-carbon unsaturated bond.

    摘要翻译： 提供了一种光化射线敏感或辐射敏感性树脂组合物，由该组合物形成的抗蚀剂膜和使用其的图案形成方法。 光化射线敏感性或辐射敏感性树脂组合物包含（P）含有以下重复单元（A），（B）和（C）的树脂; 和沸点为150℃以下的溶剂，（A）含有能够在光化射线或辐射照射时能够分解形成酸的基团的重复单元，（B）含有能够具有基团的重复单元 通过酸的作用分解和形成羧酸，和（C）含有碳 - 碳不饱和键的重复单元。

    Resist film, resist coated mask blanks and method of forming resist pattern using the resist film, and chemical amplification type resist composition
    9.
    发明授权
    Resist film, resist coated mask blanks and method of forming resist pattern using the resist film, and chemical amplification type resist composition 有权
    抗蚀剂膜，抗蚀剂涂层掩模坯料和使用抗蚀剂膜形成抗蚀剂图案的方法，以及化学放大型抗蚀剂组合物

    公开(公告)号：US08614033B2

    公开(公告)日：2013-12-24

    申请号：US13367512

    申请日：2012-02-07

    申请人： Tomotaka Tsuchimura ,  Takeshi Inasaki ,  Hiroo Takizawa

    发明人： Tomotaka Tsuchimura ,  Takeshi Inasaki ,  Hiroo Takizawa

    IPC分类号： G03F1/20 ,  G03C5/00

    CPC分类号： G03F1/50 ,  G03F1/76 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392

    摘要： A resist film formed by using a chemical amplification type resist composition containing (A) a high molecular compound having a structure wherein a hydrogen atom of a phenolic hydroxyl group is substituted by a group represented by the following general formula (I), (B) a compound generating an acid upon irradiation with actinic rays or radiation, and an organic solvent, and the film thickness is 10 to 200 nm. wherein, R1 represents a hydrocarbon group, R2 represents a hydrogen atom or a hydrocarbon group, and Ar represents an aryl group. R1 may also bind to Ar to form a ring which may also contain a heteroatom. * represents a binding position with an oxygen atom of the phenolic hydroxyl group.

    摘要翻译： 通过使用含有（A）具有酚羟基的氢原子被下述通式（I）表示的基团取代的结构的高分子化合物的化学扩增型抗蚀剂组合物形成的抗蚀剂膜，（B） 在用光化学射线或辐射照射时产生酸的化合物和有机溶剂，并且膜厚度为10-200nm。 其中，R1表示烃基，R2表示氢原子或烃基，Ar表示芳基。 R 1还可以与Ar结合形成也可含有杂原子的环。 *表示与酚羟基的氧原子的结合位置。

    Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition
    10.
    发明授权
    Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition 有权
    光化射线敏感或辐射敏感性树脂组合物，以及使用该组合物的光化射线敏感或辐射敏感膜和图案形成方法

    公开(公告)号：US08574814B2

    公开(公告)日：2013-11-05

    申请号：US13528477

    申请日：2012-06-20

    申请人： Takeshi Inasaki ,  Tomotaka Tsuchimura

    发明人： Takeshi Inasaki ,  Tomotaka Tsuchimura

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/028 ,  G03F7/26 ,  G03F7/20

    CPC分类号： C08F212/08 ,  G03F1/50 ,  G03F1/76 ,  G03F1/78 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397

    摘要： An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition that can form independent line patterns with high resolution and excellent shapes and shows excellent resist performances including roughness characteristics, and to provide an actinic ray-sensitive or radiation-sensitive film and a pattern forming method using the composition.The actinic ray-sensitive or radiation-sensitive resin composition contains a compound (P) that contains at least one phenolic hydroxyl group and at least one group in which a hydrogen atom of a phenolic hydroxyl group is substituted with a group represented by the following General Formula (1) (the respective symbols in the formula represent the same definitions as in the claims and the specification).

    摘要翻译： 本发明的目的是提供一种能够形成具有高分辨率和优异形状的独立线图案的光化射线敏感或辐射敏感性树脂组合物，并且显示出优异的包括粗糙度特性的抗蚀剂性能，并提供光化学光敏或 辐射敏感膜和使用该组合物的图案形成方法。 光化射线敏感性或辐射敏感性树脂组合物包含含有至少一个酚羟基的化合物（P）和至少一个其中酚羟基的氢原子被下列通式表示的基团取代的基团 式（1）（式中的相应符号表示与权利要求书和说明书中相同的定义）。