AD converter
    21.
    发明授权
    AD converter 有权
    AD转换器

    公开(公告)号:US07671777B2

    公开(公告)日:2010-03-02

    申请号:US11822589

    申请日:2007-07-09

    IPC分类号: H03M1/34

    摘要: An AD converter includes an analog data storing unit, a first DA converter for converting an input digital data into a first analog reference voltage which varies within a first voltage range in a range of every possible signal voltage of the input analog data, a second DA converter for converting the input digital data into a second analog reference voltage which varies within a second voltage range in the range of every possible signal voltage of the input analog data, a first comparator for comparing the input analog data with the first reference voltage, a second comparator for comparing the input analog data with the second reference voltage and a digital data storing unit for storing a digital data corresponding to a point of time when a change of state occurs in the comparison results of each of the first and second comparators.

    摘要翻译: AD转换器包括模拟数据存储单元,第一DA转换器,用于将输入数字数据转换成在输入模拟数据的每个可能的信号电压的范围内在第一电压范围内变化的第一模拟参考电压;第二DA 转换器,用于将输入数字数据转换成在输入模拟数据的每个可能的信号电压的范围内在第二电压范围内变化的第二模拟参考电压,用于将输入的模拟数据与第一参考电压进行比较的第一比较器, 第二比较器,用于将输入模拟数据与第二参考电压进行比较;以及数字数据存储单元,用于存储对应于在第一和第二比较器中的每一个的比较结果中发生状态改变的时间点的数字数据。

    Summing signals in pixel units of solid-state imager
    22.
    发明授权
    Summing signals in pixel units of solid-state imager 有权
    以固态成像仪的像素单位求和信号

    公开(公告)号:US08018510B2

    公开(公告)日:2011-09-13

    申请号:US11569603

    申请日:2005-02-25

    IPC分类号: H04N5/335

    CPC分类号: H04N5/374 H04N5/347

    摘要: A solid-state imaging device is provided in which sensitivity is prevented from lowering even when signals of pixels are mixed. The solid-state imaging device includes a plurality of pixel units each of which has a photoelectric conversion element, and is capable of summing signals corresponding to respective outputs of the photoelectric conversion elements of the pixel units. The device includes: a plurality of capacitors, each of which individually accumulates electric charges corresponding to a signal outputted from the associated photoelectric conversion element; and a plurality of MOS transistors which are alternately connected with the associated capacitor. By disconnecting the MOS transistor, the electric charges of the signal outputted from each of the photoelectric conversion elements are accumulated in each associated capacitor, and by conducting the MOS transistors to sum the signals of the pixel units, the capacitors are connected in series.

    摘要翻译: 提供一种固态成像装置,即使在像素的信号混合的情况下也可以防止其降低灵敏度。 固态成像装置包括多个像素单元,每个像素单元具有光电转换元件,并且能够对与像素单元的光电转换元件的各个输出相对应的信号求和。 该装置包括:多个电容器,每个电容器分别累积与从相关联的光电转换元件输出的信号相对应的电荷; 以及与相关联的电容器交替连接的多个MOS晶体管。 通过断开MOS晶体管,从每个相关联的电容器中累积从每个光电转换元件输出的信号的电荷,并且通过使MOS晶体管将像素单元的信号相加,电容器串联连接。

    Solid-state imaging device
    23.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US07667171B2

    公开(公告)日:2010-02-23

    申请号:US11571461

    申请日:2005-07-04

    IPC分类号: H01L27/00

    摘要: In the case where a subject is captured with a high-luminance light, such as sunlight, for a background, a phenomenon that a portion of the high-luminance subject is detected as a no-signal level is prevented. The solid-state imaging device includes: a photoelectric transducer PD which converts incident light to charges; a voltage level detection circuit 50 in which pixel units 10an1 and 10bn1, each having a voltage conversion amplifying transistor Q13a which outputs a voltage by converting the charges accumulated in the photoelectric transducer PD, are arranged one-dimensionally or two-dimensionally, and which detects a pixel output voltage outputted from each of the pixel units to the common column signal line Ln; and a column signal processing circuit 80 which receives a logic output voltage of the voltage level detection circuit 50 and the pixel output voltage and which outputs a voltage to a horizontal output circuit 90. The column signal processing circuit 80 outputs either a voltage identical to the pixel output voltage or a fixed voltage, depending on the logic output voltage.

    摘要翻译: 在用诸如阳光的高亮度光拍摄被摄体背景的情况下,防止将高亮度被摄体的一部分检测为无信号电平的现象。 固态成像装置包括:将入射光转换成电荷的光电转换器PD; 电压电平检测电路50,其中具有通过转换积累在光电变换器PD中的电荷而输出电压的电压转换放大晶体管Q13a的像素单元10an1和10bn1被一维或二维地排列, 从每个像素单元输出到公共列信号线Ln的像素输出电压; 以及列信号处理电路80,其接收电压电平检测电路50的逻辑输出电压和像素输出电压,并向水平输出电路90输出电压。列信号处理电路80输出与 像素输出电压或固定电压,取决于逻辑输出电压。

    Solid-state image sensor and manufacturing method thereof
    24.
    发明授权
    Solid-state image sensor and manufacturing method thereof 有权
    固态图像传感器及其制造方法

    公开(公告)号:US07968888B2

    公开(公告)日:2011-06-28

    申请号:US11422708

    申请日:2006-06-07

    IPC分类号: H01L31/00

    摘要: An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.

    摘要翻译: 本发明的目的是提供一种实现敏感度显着提高的小型固态图像传感器。 本发明的固态图像传感器包括形成有光电转换单元的半导体衬底,形成在半导体衬底之上并具有形成为位于各个光电转换单元之上的孔的遮光膜,以及 形成在孔中的高折射率层。 这里,每个孔径在从通过孔进入光电转换单元的光的波长转换的真空中的光波长中的最大波长较小,高折射率由高折射率材料 具有折射率,其允许通过孔径传输具有最大波长的光。

    Solid-state imaging device
    25.
    发明申请
    Solid-state imaging device 审中-公开
    固态成像装置

    公开(公告)号:US20060291056A1

    公开(公告)日:2006-12-28

    申请号:US11471705

    申请日:2006-06-21

    IPC分类号: G02B5/30

    摘要: By making an aperture 13a to which light of an R (Red) component enters larger than other apertures (apertures 12a, 14a, and 15a), an attenuation ratio of light of the R component can be reduced when compared with the case where each aperture has a same size. Therefore, deterioration in sensitivity to the light of the R component can be suppressed, and deterioration in image quality can be reduced.

    摘要翻译: 通过制造R(红色)分量的光进入其它孔径(孔径12a,14a和15a)的光圈13a,当与R(红色)成分相比,R成分的光的衰减比可以减小 每个孔径具有相同尺寸的情况。 因此,可以抑制对R成分的光的敏感性的降低,并且可以降低图像质量的劣化。

    Solid-state imaging device
    26.
    发明申请
    Solid-state imaging device 审中-公开
    固态成像装置

    公开(公告)号:US20060102827A1

    公开(公告)日:2006-05-18

    申请号:US11272895

    申请日:2005-11-15

    IPC分类号: H01L27/00

    摘要: Provided is a solid-state imaging device which can obtain an output characteristic without preventing linearity even in a high light-intensity range, and at the same time achieve a much wider dynamic range. The solid-state imaging device 1 includes: a photo-detecting element (a photoelectric transducer PD) for transducing incident light to electric charges and accumulate the electric charges; an accumulation element (a floating de-fusion FD) for accumulating the electric charges; and a transfer circuit (a MOS transistor Q11 and a pulse generating circuit 50a) for transferring the electric charges accumulated in the photo-detecting element to the accumulation element, wherein the transfer circuit has two operation modes as follows: a whole transfer for transferring almost all of the accumulated electric charges to the accumulation element; and a partial transfer for transferring only a part of the accumulated electric charges which exceeds a predetermined amount to the accumulation element.

    摘要翻译: 提供了即使在高的光强度范围也可以获得输出特性而不防止线性,同时实现更宽的动态范围的固态成像装置。 固态成像装置1包括:用于将入射光转换成电荷并积累电荷的光检测元件(光电变换器PD) 用于累积电荷的累积元件(浮动解耦FD); 以及用于将累积在光检测元件中的电荷转移到累积元件的转移电路(MOS晶体管Q 11和脉冲发生电路50a),其中传输电路具有如下两种操作模式: 将几乎所有累积的电荷转移到积聚元件; 以及仅将一部分超过预定量的累积电荷传送到累积元件的部分传送。

    Signal transmission circuit
    27.
    发明授权
    Signal transmission circuit 失效
    信号传输电路

    公开(公告)号:US06870401B1

    公开(公告)日:2005-03-22

    申请号:US10902095

    申请日:2004-07-30

    摘要: The signal transmission circuit is provided, said signal transmission circuit being capable of stable operations even with a source power of low voltage and a fast operation. The signal transmission circuit comprises plural stages of circuit in each of which the pulse voltage according to the driving pulse is sequentially outputted. The circuit of each stage includes: the output transistor T12 for outputting the pulse voltage to the source, according to the driving pulse; the bootstrap capacitor C1 connected between the gate and the source of the output transistor; the first charging transistor T11 for charging the bootstrap capacitor; the first and the second discharging transistor T13 and T14 for discharging the electric charge of the bootstrap capacitor; and the logical circuit which (i) turns on the first and the second discharging transistor, according to the driving pulse for each circuit of the other stages, and (ii) turns off the first and the second discharging transistor, according to the gate signal of the charging transistor.

    摘要翻译: 提供信号传输电路,所述信号传输电路即使具有低电压和快速操作的源功率也能够稳定地工作。 信号传输电路包括多个电路,其中根据驱动脉冲的脉冲电压被依次输出。 每级的电路包括:输出晶体管T12,用于根据驱动脉冲将脉冲电压输出到源; 所述自举电容器C1连接在所述输出晶体管的栅极和源极之间; 用于对自举电容器充电的第一充电晶体管T11; 用于放电自举电容器的电荷的第一和第二放电晶体管T13和T14; 和逻辑电路(i)根据其他级的每个电路的驱动脉冲导通第一和第二放电晶体管,以及(ii)根据栅极信号关断第一和第二放电晶体管 的充电晶体管。

    SIGNAL TRANSMISSION CIRCUIT
    28.
    发明申请
    SIGNAL TRANSMISSION CIRCUIT 失效
    信号传输电路

    公开(公告)号:US20050046445A1

    公开(公告)日:2005-03-03

    申请号:US10902095

    申请日:2004-07-30

    摘要: The signal transmission circuit is provided, said signal transmission circuit being capable of stable operations even with a source power of low voltage and a fast operation. The signal transmission circuit comprises plural stages of circuit in each of which the pulse voltage according to the driving pulse is sequentially outputted. The circuit of each stage includes: the output transistor T12 for outputting the pulse voltage to the source, according to the driving pulse; the bootstrap capacitor C1 connected between the gate and the source of the output transistor; the first charging transistor T11 for charging the bootstrap capacitor; the first and the second discharging transistor T13 and T14 for discharging the electric charge of the bootstrap capacitor; and the logical circuit which (i) turns on the first and the second discharging transistor, according to the driving pulse for each circuit of the other stages, and (ii) turns off the first and the second discharging transistor, according to the gate signal of the charging transistor.

    摘要翻译: 提供信号传输电路,所述信号传输电路即使具有低电压和快速操作的源功率也能够稳定地工作。 信号传输电路包括多个电路,其中根据驱动脉冲的脉冲电压被依次输出。 每级的电路包括:输出晶体管T12,用于根据驱动脉冲将脉冲电压输出到源; 所述自举电容器C1连接在所述输出晶体管的栅极和源极之间; 用于对自举电容器充电的第一充电晶体管T11; 用于放电自举电容器的电荷的第一和第二放电晶体管T13和T14; 和逻辑电路(i)根据其他级的每个电路的驱动脉冲导通第一和第二放电晶体管,以及(ii)根据栅极信号关断第一和第二放电晶体管 的充电晶体管。

    Solid state imaging device and differential circuit having an expanded dynamic range
    29.
    发明授权
    Solid state imaging device and differential circuit having an expanded dynamic range 有权
    具有扩展动态范围的固态成像装置和差分电路

    公开(公告)号:US08866059B2

    公开(公告)日:2014-10-21

    申请号:US13055863

    申请日:2009-07-23

    摘要: A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.

    摘要翻译: 可配置为适于扩展动态范围的小尺寸的固态成像装置包括:光电二极管,其是通过入射光产生电荷的光电转换单元; 连接到光电二极管并传送电荷的MOS晶体管; 浮动扩散区域,其是通过MOS晶体管积累电荷的第一累积单元; MOS晶体管,其是与所述浮动扩散区域连接并与所述MOS晶体管串联连接的第二转移单元; 以及MOS晶体管,其是经由MOS晶体管输出根据电荷量的信号电压的输出单元。

    SOLID-STATE IMAGING DEVICE AND DIFFERENTIAL CIRCUIT
    30.
    发明申请
    SOLID-STATE IMAGING DEVICE AND DIFFERENTIAL CIRCUIT 有权
    固态成像装置和差分电路

    公开(公告)号:US20110121162A1

    公开(公告)日:2011-05-26

    申请号:US13055863

    申请日:2009-07-23

    IPC分类号: H01L27/146

    摘要: A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.

    摘要翻译: 可配置为适于扩展动态范围的小尺寸的固态成像装置包括:光电二极管,其是通过入射光产生电荷的光电转换单元; 连接到光电二极管并传送电荷的MOS晶体管; 浮动扩散区域,其是通过MOS晶体管积累电荷的第一累积单元; MOS晶体管,其是与所述浮动扩散区域连接并与所述MOS晶体管串联连接的第二转移单元; 以及MOS晶体管,其是经由MOS晶体管输出根据电荷量的信号电压的输出单元。