摘要:
An AD converter includes an analog data storing unit, a first DA converter for converting an input digital data into a first analog reference voltage which varies within a first voltage range in a range of every possible signal voltage of the input analog data, a second DA converter for converting the input digital data into a second analog reference voltage which varies within a second voltage range in the range of every possible signal voltage of the input analog data, a first comparator for comparing the input analog data with the first reference voltage, a second comparator for comparing the input analog data with the second reference voltage and a digital data storing unit for storing a digital data corresponding to a point of time when a change of state occurs in the comparison results of each of the first and second comparators.
摘要:
A solid-state imaging device is provided in which sensitivity is prevented from lowering even when signals of pixels are mixed. The solid-state imaging device includes a plurality of pixel units each of which has a photoelectric conversion element, and is capable of summing signals corresponding to respective outputs of the photoelectric conversion elements of the pixel units. The device includes: a plurality of capacitors, each of which individually accumulates electric charges corresponding to a signal outputted from the associated photoelectric conversion element; and a plurality of MOS transistors which are alternately connected with the associated capacitor. By disconnecting the MOS transistor, the electric charges of the signal outputted from each of the photoelectric conversion elements are accumulated in each associated capacitor, and by conducting the MOS transistors to sum the signals of the pixel units, the capacitors are connected in series.
摘要:
In the case where a subject is captured with a high-luminance light, such as sunlight, for a background, a phenomenon that a portion of the high-luminance subject is detected as a no-signal level is prevented. The solid-state imaging device includes: a photoelectric transducer PD which converts incident light to charges; a voltage level detection circuit 50 in which pixel units 10an1 and 10bn1, each having a voltage conversion amplifying transistor Q13a which outputs a voltage by converting the charges accumulated in the photoelectric transducer PD, are arranged one-dimensionally or two-dimensionally, and which detects a pixel output voltage outputted from each of the pixel units to the common column signal line Ln; and a column signal processing circuit 80 which receives a logic output voltage of the voltage level detection circuit 50 and the pixel output voltage and which outputs a voltage to a horizontal output circuit 90. The column signal processing circuit 80 outputs either a voltage identical to the pixel output voltage or a fixed voltage, depending on the logic output voltage.
摘要:
An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.
摘要:
By making an aperture 13a to which light of an R (Red) component enters larger than other apertures (apertures 12a, 14a, and 15a), an attenuation ratio of light of the R component can be reduced when compared with the case where each aperture has a same size. Therefore, deterioration in sensitivity to the light of the R component can be suppressed, and deterioration in image quality can be reduced.
摘要:
Provided is a solid-state imaging device which can obtain an output characteristic without preventing linearity even in a high light-intensity range, and at the same time achieve a much wider dynamic range. The solid-state imaging device 1 includes: a photo-detecting element (a photoelectric transducer PD) for transducing incident light to electric charges and accumulate the electric charges; an accumulation element (a floating de-fusion FD) for accumulating the electric charges; and a transfer circuit (a MOS transistor Q11 and a pulse generating circuit 50a) for transferring the electric charges accumulated in the photo-detecting element to the accumulation element, wherein the transfer circuit has two operation modes as follows: a whole transfer for transferring almost all of the accumulated electric charges to the accumulation element; and a partial transfer for transferring only a part of the accumulated electric charges which exceeds a predetermined amount to the accumulation element.
摘要:
The signal transmission circuit is provided, said signal transmission circuit being capable of stable operations even with a source power of low voltage and a fast operation. The signal transmission circuit comprises plural stages of circuit in each of which the pulse voltage according to the driving pulse is sequentially outputted. The circuit of each stage includes: the output transistor T12 for outputting the pulse voltage to the source, according to the driving pulse; the bootstrap capacitor C1 connected between the gate and the source of the output transistor; the first charging transistor T11 for charging the bootstrap capacitor; the first and the second discharging transistor T13 and T14 for discharging the electric charge of the bootstrap capacitor; and the logical circuit which (i) turns on the first and the second discharging transistor, according to the driving pulse for each circuit of the other stages, and (ii) turns off the first and the second discharging transistor, according to the gate signal of the charging transistor.
摘要:
The signal transmission circuit is provided, said signal transmission circuit being capable of stable operations even with a source power of low voltage and a fast operation. The signal transmission circuit comprises plural stages of circuit in each of which the pulse voltage according to the driving pulse is sequentially outputted. The circuit of each stage includes: the output transistor T12 for outputting the pulse voltage to the source, according to the driving pulse; the bootstrap capacitor C1 connected between the gate and the source of the output transistor; the first charging transistor T11 for charging the bootstrap capacitor; the first and the second discharging transistor T13 and T14 for discharging the electric charge of the bootstrap capacitor; and the logical circuit which (i) turns on the first and the second discharging transistor, according to the driving pulse for each circuit of the other stages, and (ii) turns off the first and the second discharging transistor, according to the gate signal of the charging transistor.
摘要:
A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.
摘要:
A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.