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    Schottky Electrode of Nitride Semiconductor Device and Process for Production Thereof
    21.
    发明申请
    Schottky Electrode of Nitride Semiconductor Device and Process for Production Thereof 审中-公开
    氮化硅半导体器件的肖特基电极及其制造方法

    公开(公告)号：US20080006853A1

    公开(公告)日：2008-01-10

    申请号：US11571816

    申请日：2005-07-08

    申请人： Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yuji Ando ,  Yasuhiro Okamoto ,  Masaaki Kuzuhara ,  Takashi Inoue ,  Koji Hataya

    发明人： Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yuji Ando ,  Yasuhiro Okamoto ,  Masaaki Kuzuhara ,  Takashi Inoue ,  Koji Hataya

    IPC分类号： H01L29/47 ,  H01L21/283 ,  H01L29/812

    CPC分类号： H01L29/475 ,  H01L29/2003 ,  H01L29/812

    摘要： The present invention provides a Schottky electrode for a nitride semiconductor device having a high barrier height, a low leak current performance and a low resistance and being thermally stable, and a process for production thereof. The Schottky electrode for a nitride semiconductor has a layered structure that comprises a copper (Cu) layer being in contact with the nitride semiconductor and a first electrode material layer formed on the copper (Cu) layer as an upper layer. As the first electrode material, a metal material which has a thermal expansion coefficient smaller than the thermal expansion coefficient of copper (Cu) and starts to undergo a solid phase reaction with copper (Cu) at a temperature of 400° C. or higher is employed.

    摘要翻译： 本发明提供了一种用于氮化物半导体器件的肖特基电极，其具有高势垒高度，低漏电流性能和低电阻并且是热稳定的，以及其制造方法。 用于氮化物半导体的肖特基电极具有包括与氮化物半导体接触的铜（Cu）层和形成在作为上层的铜（Cu）层上的第一电极材料层的层状结构。 作为第一电极材料，在400℃以上的温度下开始与铜（Cu）的热膨胀系数小于铜（Cu）的热膨胀系数并开始与铜（Cu）的固相反应的金属材料为 雇用。

    Field Effect Transistor
    26.
    发明申请
    Field Effect Transistor 审中-公开
    场效应晶体管

    公开(公告)号：US20090173968A1

    公开(公告)日：2009-07-09

    申请号：US12097700

    申请日：2006-12-12

    申请人： Kouji Matsunaga ,  Kazuki Ota ,  Yasuhiro Okamoto ,  Tatsuo Nakayama ,  Akio Wakejima ,  Yuji Ando ,  Hironobu Miyamoto ,  Takashi Inoue ,  Yasuhiro Murase

    发明人： Kouji Matsunaga ,  Kazuki Ota ,  Yasuhiro Okamoto ,  Tatsuo Nakayama ,  Akio Wakejima ,  Yuji Ando ,  Hironobu Miyamoto ,  Takashi Inoue ,  Yasuhiro Murase

    IPC分类号： H01L29/205

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

    摘要： A semiconductor device 100 contains an undoped GaN channel layer 105, an AlGaN electron donor layer 106 provided on the undoped GaN channel layer 105 as being brought into contact therewith, an undoped GaN layer 107 provided on the AlGaN electron donor layer 106, a source electrode 101 and a drain electrode 103 provided on the undoped GaN layer 107 as being spaced from each other, a recess 111 provided in the region between the source electrode 101 and the drain electrode 103, as being extended through the undoped GaN layer 107, a gate electrode 102 buried in the recess 111 as being brought into contact with the AlGaN electron donor layer 106 on the bottom surface thereof, and an SiN film 108 provided on the undoped GaN layer 107, in the region between the gate electrode 102 and the drain electrode 103.

    摘要翻译： 半导体器件100包含未掺杂的GaN沟道层105，设置在与其接触的未掺杂的GaN沟道层105上的AlGaN电子供体层106，设置在AlGaN电子供体层106上的未掺杂的GaN层107，源电极 101和设置在未掺杂的GaN层107上彼此间隔开的漏电极103，设置在源电极101和漏电极103之间的区域中的凹槽111延伸穿过未掺杂的GaN层107，栅极 埋入凹槽111中的电极102与其底表面上的AlGaN电子供体层106接触，以及设置在未掺杂的GaN层107上的SiN膜108，在栅电极102和漏极之间的区域 103。

    Semiconductor device, schottky barrier diode, electronic apparatus, and method of producing semiconductor device
    27.
    发明授权
    Semiconductor device, schottky barrier diode, electronic apparatus, and method of producing semiconductor device 有权
    半导体器件，肖特基势垒二极管，电子器件，以及半导体器件的制造方法

    公开(公告)号：US08772785B2

    公开(公告)日：2014-07-08

    申请号：US13141448

    申请日：2009-11-26

    申请人： Yasuhiro Okamoto ,  Hironobu Miyamoto ,  Yuji Ando ,  Tatsuo Nakayama ,  Takashi Inoue ,  Kazuki Ota ,  Kazuomi Endo

    发明人： Yasuhiro Okamoto ,  Hironobu Miyamoto ,  Yuji Ando ,  Tatsuo Nakayama ,  Takashi Inoue ,  Kazuki Ota ,  Kazuomi Endo

    IPC分类号： H01L29/15

    CPC分类号： H01L29/872 ,  H01L29/08 ,  H01L29/2003 ,  H01L29/475

    摘要： A semiconductor device includes semiconductor layers, an anode electrode, and a cathode electrode. The semiconductor layers include a composition change layer, the anode electrode is electrically connected to one of principal surfaces of the composition change layer through a formation of a Schottky junction between the anode electrode and a part of the semiconductor layers, the cathode electrode is electrically connected to the other of the principal surfaces of the composition change layer through a formation of a junction between the cathode electrode and another part of the semiconductor layers, the anode electrode and the cathode electrode are capable of applying a voltage to the composition change layer in a direction perpendicular to the principal surface.

    摘要翻译： 半导体器件包括半导体层，阳极电极和阴极电极。 半导体层包括组成变化层，阳极电极通过在阳极电极和一部分半导体层之间形成肖特基结而与组合物变化层的主表面电连接，阴极电连接 通过在阴极电极和另一部分半导体层之间形成接合而形成组合物变化层的另一个主表面，阳极电极和阴极电极能够向组合物变化层施加电压 方向垂直于主表面。

    SEMICONDUCTOR DEVICE, SCHOTTKY BARRIER DIODE, ELECTRONIC APPARATUS, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
    28.
    发明申请
    SEMICONDUCTOR DEVICE, SCHOTTKY BARRIER DIODE, ELECTRONIC APPARATUS, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
    半导体器件，肖特基二极管二极管，电子设备和生产半导体器件的方法

    公开(公告)号：US20110297954A1

    公开(公告)日：2011-12-08

    申请号：US13141448

    申请日：2009-11-26

    申请人： Yasuhiro Okamoto ,  Hironobu Miyamoto ,  Yuji Ando ,  Tatsuo Nakayama ,  Takashi Inoue ,  Kazuki Ota ,  Kazuomi Endo

    发明人： Yasuhiro Okamoto ,  Hironobu Miyamoto ,  Yuji Ando ,  Tatsuo Nakayama ,  Takashi Inoue ,  Kazuki Ota ,  Kazuomi Endo

    IPC分类号： H01L29/20 ,  H01L21/329

    CPC分类号： H01L29/872 ,  H01L29/08 ,  H01L29/2003 ,  H01L29/475

    摘要： [Problem to be Solved] Provided is a semiconductor device in which the trade-off between the pressure resistance and the on-state resistance is improved and the performance is improved.[Solution] The semiconductor device 1 of the present invention comprises semiconductor layers 20 to 23, an anode electrode 12, and a cathode electrode 13, wherein the semiconductor layers include a composition change layer 23, the anode electrode 12 is electrically connected to one of principal surfaces of the composition change layer through a formation of a Schottky junction between the anode electrode 12 and a part of the semiconductor layers, the cathode electrode 13 is electrically connected to the other of the principal surfaces of the composition change layer through a formation of a junction between the cathode electrode 13 and another part of the semiconductor layers, the anode electrode 12 and the cathode electrode 13 are capable of applying a voltage to the composition change layer 23 in a direction perpendicular to the principal surface, andthe composition change layer 23 has composition that changes from a cathode electrode 13 side toward an anode electrode 12 side in the direction perpendicular to the principal surface of the composition change layer, has a negative polarization charge that is generated due to the composition that changes, and contains a donor impurity.

    摘要翻译： [待解决的问题]提供了一种半导体器件，其中改善了耐压性和通态电阻之间的折衷，并提高了性能。 [解决方案]本发明的半导体器件1包括半导体层20至23，阳极电极12和阴极电极13，其中半导体层包括组成变化层23，阳极电极12电连接到 通过在阳极12和半导体层的一部分之间形成肖特基结，组成变化层的主表面通过形成阴极电极13而与组合物改变层的另一个主表面电连接 阴极电极13和半导体层的另一部分之间的接合点，阳极电极12和阴极电极13能够在垂直于主表面的方向上向组合物变化层23施加电压，并且组成变化层 23具有从阴极电极13侧向阳极电极12侧变化的组成 具有垂直于组成变化层的主表面的方向具有由于组成变化而产生并且包含施主杂质的负极化电荷。

    SEMICONDUCTOR DEVICE
    29.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110006346A1

    公开(公告)日：2011-01-13

    申请号：US12919640

    申请日：2009-03-12

    申请人： Yuji Ando ,  Yasuhiro Okamoto ,  Kazuki Ota ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

    发明人： Yuji Ando ,  Yasuhiro Okamoto ,  Kazuki Ota ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

    IPC分类号： H01L29/737

    CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/518 ,  H01L29/7785

    摘要： The present invention provides a semiconductor device that has high electron mobility while reducing a gate leakage current, and superior uniformity and reproducibility of the threshold voltage, and is also applicable to the enhancement mode type. The semiconductor device according to the present invention is a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed AlxGa1-xN (0≦x≦1), a channel layer composed of InyGa1-yN (0≦y≦1) with compressive strain and a contact layer composed of AlzGa1-zN (0≦z≦1), wherein a two-dimensional electron gas is produced in the vicinity of an interface of said InyGa1-yN channel layer with said AlzGa1-zN contact layer; a gate electrode is formed so as to be embedded in the recessed portion with intervention of an insulating film, which recessed portion is formed by removing a part of said AlzGa1-zN contact layer by etching it away until said InyGa1-yN channel layer is exposed; and, ohmic electrodes are formed on the AlzGa1-zN contact layer. Thus, there is provided a semiconductor device that has superior uniformity and reproducibility of the threshold voltage while maintaining a low gate leakage current and high electron mobility, and thereby, is capable of operation in enhancement mode.

    摘要翻译： 本发明提供了一种在降低栅极漏电流的同时具有高电子迁移率并具有优异的阈值电压的均匀性和再现性的半导体器件，并且也适用于增强型。 根据本发明的半导体器件是具有这样的结构的半导体器件，该半导体器件通过顺序地层叠由晶格弛豫的Al x Ga 1-x N（0＆lt; n 1; x＆n 1; 1）构成的下阻挡层，由InyGa1-yN（0＆ ; y＆nlE; 1）具有压应变和由AlzGa1-zN（0＆amp; nlE; z＆nlE; 1）组成的接触层，其中在所述In y Ga 1-y N沟道层的界面附近产生二维电子气体与所述AlzGa1 -zN接触层 通过介入绝缘膜形成嵌入在凹陷部分中的栅电极，该凹陷部分通过蚀刻除去所述AlzGa1-zN接触层的一部分而形成，直到所述In y Ga 1-y N沟道层暴露 ; 并且在AlzGa1-zN接触层上形成欧姆电极。 因此，提供了具有优异的阈值电压的均匀性和再现性的半导体器件，同时保持低栅极漏电流和高电子迁移率，从而能够在增强模式下操作。

    FIELD EFFECT TRANSISTOR
    30.
    发明申请
    FIELD EFFECT TRANSISTOR 审中-公开
    场效应晶体管

    公开(公告)号：US20090267114A1

    公开(公告)日：2009-10-29

    申请号：US12295104

    申请日：2007-03-23

    申请人： Tatsuo Nakayama ,  Yuji Ando ,  Hironobu Miyamoto ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota ,  Yasuhiro Murase ,  Naotaka Kuroda

    发明人： Tatsuo Nakayama ,  Yuji Ando ,  Hironobu Miyamoto ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota ,  Yasuhiro Murase ,  Naotaka Kuroda

    IPC分类号： H01L29/772 ,  H01L29/205

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/8128

    摘要： A field effect transistor 100 includes a group III-V nitride semiconductor layer structure containing a hetero junction, a source electrode 105 and a drain electrode 106 formed on the group III-V nitride semiconductor layer structure to be spaced apart from each other; a gate electrode 110 arranged between the source electrode 105 and the drain electrode 106, and an insulating layer 107 provided over, and in contact with, the group III-V nitride semiconductor layer structure in a region between the gate electrode 110 and the drain electrode 106 or in a region between the source electrode 105 and the gate electrode 110. A portion of the gate electrode 110 is buried in the group III-V nitride semiconductor layer structure, and a side edge of the gate electrode in an interface of the group III-V nitride semiconductor layer and the insulating layer 107 is spaced apart from the gate electrode 110.

    摘要翻译： 场效应晶体管100包括在III-V族氮化物半导体层结构上彼此间隔开的含有异质结的III-V族氮化物半导体层结构，源电极105和漏电极106。 布置在源电极105和漏电极106之间的栅电极110以及在栅电极110和漏电极之间的区域中设置在III-V族氮化物半导体层结构上并与III-V族氮化物半导体层结构接触的绝缘层107 106或源极电极105和栅电极110之间的区域中。栅电极110的一部分被掩埋在III-V族氮化物半导体层结构中，并且栅极电极在该组的界面中的侧边缘 III-V族氮化物半导体层和绝缘层107与栅电极110间隔开。