摘要:
In a field effect transistor, a Group III nitride semiconductor layer structure containing a hetero junction, a source electrode 101 and a drain electrode 103 formed apart from each other over the Group III nitride semiconductor layer structure, and a gate electrode 102 disposed between these electrodes, are provided. Over the surface of the Group III nitride semiconductor layer structure, a SiO2 film 122 containing oxygen as a constitutive element is provided, in contact with both side faces of the gate electrode 102. Over the surface of the Group III nitride semiconductor layer structure, a SiN film 121 is provided so as to cover the region between the SiO2 film 122 and the source electrode 101, and the region between the SiO2 film 122 and the drain electrode 103. The SiN film 121 is composed of a material different from that composing the SiO2 film 122, and contains nitrogen as a constitutive element.
摘要:
In a predetermined range from a nose portion toward a scroll finish side in a scroll casing of a centrifugal blower, a first clearance dimension on a side of a suction port between an outer periphery of a centrifugal fan and a side plate of the scroll casing is set smaller than a second clearance dimension on a side opposite to the suction port between the outer periphery of the centrifugal fan and the side plate of the scroll casing. In addition, in the vicinity of the nose portion, a first wall part of the scroll casing on the side of the suction port protrudes toward a scroll finish side, from a second wall part of the scroll casing on the side opposite to the suction port.
摘要:
In a vehicle air conditioner with a heat pump refrigerant cycle, an interior heat exchanger of the refrigerant cycle is disposed in an air conditioning case to heat air in a heating operation and to cool air in a cooling operation. Further, a cooling heat exchanger for cooling air by evaporating the refrigerant is disposed so that a part of refrigerant circulating in the refrigerant cycle flows into the cooling heat exchanger at least in the heating operation. In addition, a decompression unit for decompressing refrigerant flowing to the cooling heat exchanger is disposed, and the decompression unit is opened even in the cooling operation. Accordingly, dehumidifying capacity of the air conditioner can be improved while the refrigerant cycle has a simple structure.
摘要:
In a tip portion structure basically having a substrate, a plate spring, and a ground block, the substrate is attached to a signal line on a back surface of the substrate and is contacted on the tip with the signal electrode of the DUT placed on a device stage. The plate spring is made of a resilient material, placed on the front side of the substrate, and positioned to apply a pressure to the substrate. The ground block is positioned between the signal line and the device stage functioned as a ground electrode of the DUT. Alternatively, the tip portion structure further may have a ground plate or a ground surface formed of a conductive thin plate covering entirely the front surface of the substrate, and shaped to surround the signal line in cooperation with the ground block. A plurality of the signal lines may be arranged in parallel on the same plane of the substrate. Another tip portion structure is based on a coaxial cable to be cut from the center at a plane perpendicular to the axial direction thereof along one or more oblique plane. A metal ring fitted over a periphery of the coaxial outer conductor may be used.
摘要:
The present invention solves characteristic deterioration caused by peaking and a ground inductance, and provides a transimpedance amplifier capable of achieving a higher gain and a wider band. For this purpose, the transimpedance amplifier is configured to include a feedback circuit having two or more extreme frequencies and having a filter characteristic which is flat with respect to frequencies in a frequency region not more than a smallest extreme frequency among the extreme frequencies, which is flat with respect to frequencies in a frequency region not less than a largest extreme frequency among the extreme frequencies, and which has at least one negative inclination portion with respect to frequencies in a frequency region between the smallest and largest extreme frequencies.
摘要:
A centrifugal ventilator fan, which has improved fan performance and lower noise. A first outlet angle, on an upstream end of the fan, is less than a second outlet angle. Additionally, the first outlet angle is equal to zero degrees or greater and five degrees or less, while the second outlet angle is equal to thirty degrees or greater and forty five degrees or less. Furthermore, a first inlet angle, on an upstream end, is greater than a second inlet angle, on the opposite end. The first inlet angle is equal to sixty-five degrees or greater and ninety degrees or less, and the second inlet angle is equal to fifty-five degrees or more and seventy-five degrees or less.
摘要:
An air conditioning unit of a vehicle air conditioner is disposed inside a dashboard approximately at a center portion in a vehicle right-left direction. Center face air outlets are provided in the dashboard opposite to right and left end sides of the air conditioning unit, and center face openings are provided in the air conditioning unit at right and left end sides in a vehicle right-left direction. Therefore, the center face outlets on the dashboard and the center face openings of the air conditioning unit can be connected by center face ducts each of which extends substantially straightly. Accordingly, pressure loss of air in the center face ducts can be reduced, and an air amount blown from the center face air outlet into the passenger compartment can be effectively increased.
摘要:
In an air conditioning apparatus, an air conditioning case has an upstream portion defining an air intake port through which air flows into the upstream portion substantially parallel to a core surface of a heat exchanger. The air intake port has a vertical dimension H1 that is smaller than a vertical dimension H2 of the core surface. The upstream portion has an air flow direction changing portion protruding inside of the upstream portion at a position opposite to the core surface above the air intake port. The air flow direction changing portion defines a clearance between the core surface and itself. A part of the air turned upward and further turned substantially parallel to the core surface strikes the air flow direction changing portion and flows toward the core surface through the clearance.
摘要:
A carrier travel layer is formed on the substrate of a semiconductor device with a buffer layer interposed, and a spacer layer and carrier supply layer are then formed on this carrier travel layer. On the carrier supply layer are provided a source electrode and a drain electrode, and a gate electrode is provided on an interposed Schottky layer. The carrier supply layer is composed of AlGaN and has tensile strain. The Schottky layer is composed of InGaN and has compressive strain. A negative piezoelectric charge is induced on the carrier supply layer side of the Schottky layer, and a positive piezoelectric charge is induced on the opposite side of the Schottky layer, whereby a sufficient Schottky barrier height is obtained and leakage current is suppressed.
摘要:
A high-frequency probe according to the present invention comprises a probe chip that has an end part that is pressed to an electrode and is covered by a electrically conductive outer enclosure, and slides in a vertical direction by an inner surface of this electrically conductive outer enclosure inside this electrically conductive outer enclosure. A signal conductive pattern is fixed inside this probe chip and is connected with a inner conductor having elasticity. The inner conductor can be bent in the vertical direction at a central part of a hole having an opening, which is sufficiently long in the vertical direction, in the center space of a ground conductor, which is fixed to an end part of the main block, when the inner conductor is pressed due to contact of the end part. In addition, the high-frequency probe has a thin shape of a maximum thickness in a transverse direction which is perpendicular to the vertical direction that is a direction of the probe being pressed to a device electrode. The maximum thickness is substantially equal to a pitch between device electrodes, and can be formed in the construction of unifying a plurality of high-frequency probes.