公开(公告)号：US09077980B2

公开(公告)日：2015-07-07

申请号：US13304927

申请日：2011-11-28

申请人： Hideo Takagi ,  Kenji Goto ,  Masafumi Takiguchi

发明人： Hideo Takagi ,  Kenji Goto ,  Masafumi Takiguchi

IPC分类号： H04N13/02 ,  G06K9/00 ,  H04N5/232 ,  G06T5/00

CPC分类号： H04N13/239 ,  G06K9/00 ,  G06T5/003 ,  G06T2207/20201 ,  H04N5/23258 ,  H04N13/296

摘要： A correction value calculation apparatus that includes circuitry configured to: acquire a relative position of a feature point to a reference point in a left/right image formed by a left/right lens as a left/right pixel position in the case where the left/right lens is moved in a coordinate system constructed with a pitch axis and a yaw axis; detect a relative position of the left/right lens to a reference position as a left/right lens detection position; generate a characteristic representing a relationship between the left/right pixel position and the left/right lens detection position; set each of the left/right lens detection position as a correction object position and determine an adjustment position which is a position on a straight line connecting the left and right pixel positions; and calculate correction values which are differences between the left and right lens detection positions.

摘要翻译： 一种校正值计算装置，包括电路，其被配置为：在左/右像素的左/右像素位置中，获取特征点与由左/右透镜形成的左/右图像中的参考点的相对位置， 右镜头在由俯仰轴和偏转轴构成的坐标系中移动; 检测左/右透镜相对于参考位置的相对位置作为左/右透镜检测位置; 产生表示左/右像素位置和左/右透镜检测位置之间的关系的特性; 将每个左/右透镜检测位置设置为校正对象位置，并确定作为连接左右像素位置的直线上的位置的调整位置; 并计算作为左右透镜检测位置之间的差的校正值。

公开(公告)号：US08131141B2

公开(公告)日：2012-03-06

申请号：US10576097

申请日：2005-08-18

申请人： Tomoya Takei ,  Toshifumi Takaoka ,  Hideo Takagi ,  Yoshikazu Ito ,  Masanori Hayashi ,  Tomohiro Yasui ,  Hideki Yamaoka ,  Kentaro Tashita

发明人： Tomoya Takei ,  Toshifumi Takaoka ,  Hideo Takagi ,  Yoshikazu Ito ,  Masanori Hayashi ,  Tomohiro Yasui ,  Hideki Yamaoka ,  Kentaro Tashita

IPC分类号： G03B17/00

CPC分类号： G02B7/102 ,  G03B17/04 ,  H04N2101/00

摘要： A lens position detecting device 200 has a position detecting magnet 202, a magnetic force detecting sensor 204, a positional information generating means 206, etc. The position detecting magnet 202 is mounted on a rear surface of a lens holder frame 1460. The magnetic force detecting sensor 204 serves to generate a detected signal having a magnitude depending on the intensity of a magnetic force generated from the magnetic poles of the position detecting magnet 202. The magnetic force detecting sensor 204 is disposed on a straight line that passes through the position detecting magnet 202 parallel to the optical axis. The magnetic force detecting sensor 204 outputs a detected signal having a voltage corresponding (proportional) to the intensity of the magnetic force. An amplifying circuit 208 of a positional information generating means 206 amplifies the detected signal Ss from the magnetic force detecting sensor 204.

摘要翻译： 透镜位置检测装置200具有位置检测磁铁202，磁力检测传感器204，位置信息生成装置206等。位置检测用磁铁202安装在透镜架框架1460的背面。磁力 检测传感器204用于产生具有取决于从位置检测磁体202的磁极产生的磁力的强度的检测信号。磁力检测传感器204设置在通过位置检测的直线上 磁体202平行于光轴。 磁力检测传感器204输出具有与磁力的强度对应（成比例）的电压的检测信号。 位置信息生成装置206的放大电路208从磁力检测传感器204放大检测信号Ss。

公开(公告)号：US20080292297A1

公开(公告)日：2008-11-27

申请号：US12034363

申请日：2008-02-20

申请人： Masahiro FUSHIDA ,  Toshifumi Takaoka ,  Hideo Takagi

发明人： Masahiro FUSHIDA ,  Toshifumi Takaoka ,  Hideo Takagi

IPC分类号： G03B17/00

CPC分类号： H04N5/23248 ,  H04N5/23258 ,  H04N5/23261 ,  H04N5/23287

摘要： A vibration detecting device includes: a vibration amount detecting unit including at least a vibration amount sensor which is a portion for detecting a vibration amount, and outputting a vibration detection signal which is a signal indicating the detected vibration amount, and a high-pass filter configured to remove DC components to be superimposed on the vibration detection signal; a status detecting unit configured to detect a particular status which causes a result for providing particular change to the vibration amount detected by said vibration amount sensor; and an input control unit configured to prevent said vibration amount detection signal from being input to said high-pass filter in response to said particular status being detected by said status detecting unit.

摘要翻译： 振动检测装置包括：振动量检测单元，至少包括作为用于检测振动量的部分的振动量传感器，并输出作为表示检测到的振动量的信号的振动检测信号，以及高通滤波器 被配置为去除要叠加在所述振动检测信号上的直流分量; 状态检测单元，被配置为检测使得结果对由所述振动量传感器检测到的振动量进行特定改变的特定状态; 以及输入控制单元，被配置为响应于所述状态检测单元检测到的所述特定状态，防止所述振动量检测信号被输入到所述高通滤波器。

公开(公告)号：US07253046B2

公开(公告)日：2007-08-07

申请号：US11065305

申请日：2005-02-25

申请人： Masahiko Higashi ,  Manabu Nakamura ,  Kentaro Sera ,  Hiroyuki Nansei ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

发明人： Masahiko Higashi ,  Manabu Nakamura ,  Kentaro Sera ,  Hiroyuki Nansei ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

IPC分类号： H01L21/8238

CPC分类号： H01L21/0217 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/28282 ,  H01L21/31155 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/66833

摘要： After an ONO film in which a silicon nitride film (22) formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (21), (23), a bit line diffusion layer (17) is formed in a memory cell array region (11) by an ion implantation as a resist pattern (16) taken as a mask, then lattice defects are given to the silicon nitride film (22) by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.

摘要翻译： 在通过使用具有径向线槽天线的等离子体处理器通过等离子体氮化方法形成的氮化硅膜（22）夹在氧化硅膜（21），（23）上的ONO膜之后，位线扩散层（17） ）通过离子注入形成在存储单元阵列区域（11）中，作为抗蚀剂图案（16）作为掩模，然后通过进一步的离子注入向氮化硅膜（22）提供晶格缺陷。 因此，可以实现在低温条件下形成高质量氮化物膜的高度可靠的半导体存储器件，此外，氮化物膜可以用作具有充分适应于 小型化和高度一体化是最近的需求。

公开(公告)号：US20050212074A1

公开(公告)日：2005-09-29

申请号：US11065307

申请日：2005-02-25

申请人： Kentaro Sera ,  Hiroyuki Nansei ,  Manabu Nakamura ,  Masahiko Higashi ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

发明人： Kentaro Sera ,  Hiroyuki Nansei ,  Manabu Nakamura ,  Masahiko Higashi ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L29/00

CPC分类号： H01L21/76235

摘要： A trench (4) is formed in a semiconductor substrate (1), and then a plasma oxynitride film (5) is formed on a side wall surface and a bottom surface of the trench (4) at a temperature of approximately 300° C. to 650° C. At such a temperature, no outward diffusion of impurities from the semiconductor substrate (1) occurs. Therefore, any problems such as formation of a parasitic transistor hardly occur even when ions of impurities are not implanted thereafter. After the plasma oxynitride film (5) is formed, it is thermally oxidized, and a portion where the outermost surface of the semiconductor substrate (1) meets the wall surface of the trench (4) is turned into a curved surface. As a result, the outermost surface of the semiconductor substrate (1) and the wall surface of the trench (4) meet each other while forming a curved surface, and hence a parasitic transistor is hardly formed at this portion. Consequently, formation of a hump is prevented, thereby achieving favorable characteristics.

摘要翻译： 在半导体衬底（1）中形成沟槽（4），然后在约300℃的温度下在沟槽（4）的侧壁表面和底表面上形成等离子体氧氮化物膜（5） 到650℃。在这样的温度下，不会发生杂质从半导体衬底（1）的向外扩散。 因此，即使其后没有植入杂质的离子，也难以形成诸如形成寄生晶体管的问题。 在形成等离子体氮氧化物膜（5）之后，其被热氧化，并且半导体衬底（1）的最外表面与沟槽（4）的壁表面相交的部分变成弯曲表面。 结果，半导体衬底（1）的最外表面和沟槽（4）的壁表面在形成弯曲表面的同时彼此相遇，因此在该部分难以形成寄生晶体管。 因此，防止形成隆起，从而获得有利的特性。

公开(公告)号：US06666292B2

公开(公告)日：2003-12-23

申请号：US09832927

申请日：2001-04-12

申请人： Hideo Takagi ,  Chinmoy Pal

发明人： Hideo Takagi ,  Chinmoy Pal

IPC分类号： B60T722

CPC分类号： B60R21/01516 ,  B60R21/0134 ,  B60R21/01554 ,  B60R2021/0011 ,  B60R2021/01272 ,  B60R2022/4609

摘要： A rear end collision sensor is designed to detect the possibility of a rear end collision of a vehicle in advance. Upon detection, a controller drives a seat belt system to restrain the head of a seat occupant toward a headrest of the seat or to straighten the spine of the seat occupant to protect the neck against impending impact.

摘要翻译： 后端碰撞传感器被设计成预先检测车辆的后端碰撞的可能性。 在检测到时，控制器驱动安全带系统以将座椅乘员的头部朝向座椅的头枕限制，或者拉直座椅乘员的脊柱，以保护颈部免受即将发生的冲击。

公开(公告)号：US06440844B1

公开(公告)日：2002-08-27

申请号：US09111799

申请日：1998-07-08

申请人： Hideo Takagi ,  Kiyoshi Izumi ,  Wataru Futo ,  Satoshi Otsuka ,  Shigetaka Uji ,  Masataka Hoshino ,  Yukihiro Satoh ,  Koji Endo ,  Yuzuru Ohta ,  Nobuhiro Misawa

发明人： Hideo Takagi ,  Kiyoshi Izumi ,  Wataru Futo ,  Satoshi Otsuka ,  Shigetaka Uji ,  Masataka Hoshino ,  Yukihiro Satoh ,  Koji Endo ,  Yuzuru Ohta ,  Nobuhiro Misawa

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The method of manufacturing a semiconductor device includes the steps of forming copper wiring; reducing an oxide film on the surface of the copper wiring by heating the copper wiring to a temperature in a range of 250° C.-450° C. under reductive gas or by treating the copper wiring in plasma of reductive gas; and then forming a film of a material not containing oxygen on the copper wiring without exposing the copper wiring to external atmosphere, and can provide a semiconductor device with good copper wiring.

摘要翻译： 制造半导体器件的方法包括形成铜布线的步骤; 通过在还原性气体下将铜布线加热到250℃-450℃的温度，或者通过处理还原气体的等离子体中的铜布线来减少铜布线表面上的氧化膜; 然后在铜布线上形成不含氧的材料的膜，而不将铜布线暴露于外部大气，并且可以提供具有良好铜布线的半导体器件。

公开(公告)号：US6153522A

公开(公告)日：2000-11-28

申请号：US179886

申请日：1998-10-28

申请人： Hideo Takagi ,  Shigetaka Uji ,  Shyoji Hirao

发明人： Hideo Takagi ,  Shigetaka Uji ,  Shyoji Hirao

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H05K3/06 ,  H01L21/44

CPC分类号： H01L21/7684 ,  H01L21/76882

摘要： A semiconductor device manufacturing method of the present invention comprises the steps of forming a groove on an insulating film formed over a semiconductor substrate, forming a first copper film on the insulating film and in the groove by sputtering using a target, reflowing the first copper film by heating it, growing a second copper film on the first copper film by plating or chemical vapor deposition, and removing the second copper film and the first copper film on the insulating film by chemical mechanical polishing to remain at least the first copper film in the groove. Accordingly, in the semiconductor device manufacturing method to provide copper wirings, increase in resistance can be suppressed by firmly embedding copper into the groove and also electromigration resistance of copper wirings can be improved.

摘要翻译： 本发明的半导体器件制造方法包括以下步骤：在半导体衬底上形成绝缘膜上形成沟槽，在绝缘膜上形成第一铜膜，通过使用靶溅射形成沟槽，回流第一铜膜 通过加热，通过电镀或化学气相沉积在第一铜膜上生长第二铜膜，并通过化学机械抛光去除绝缘膜上的第二铜膜和第一铜膜，以至少将第一铜膜保留在 槽。 因此，在提供铜布线的半导体器件制造方法中，通过将铜牢固地嵌入槽中可以抑制电阻的增加，并且还可以提高铜布线的电迁移阻力。

公开(公告)号：US07840126B2

公开(公告)日：2010-11-23

申请号：US12034363

申请日：2008-02-20

申请人： Masahiro Fushida ,  Toshifumi Takaoka ,  Hideo Takagi

发明人： Masahiro Fushida ,  Toshifumi Takaoka ,  Hideo Takagi

IPC分类号： G03B17/00

CPC分类号： H04N5/23248 ,  H04N5/23258 ,  H04N5/23261 ,  H04N5/23287

摘要： A vibration detecting device includes: a vibration amount detecting unit including at least a vibration amount sensor which is a portion for detecting a vibration amount, and outputting a vibration detection signal which is a signal indicating the detected vibration amount, and a high-pass filter configured to remove DC components to be superimposed on the vibration detection signal; a status detecting unit configured to detect a particular status which causes a result for providing particular change to the vibration amount detected by said vibration amount sensor; and an input control unit configured to prevent said vibration amount detection signal from being input to said high-pass filter in response to said particular status being detected by said status detecting unit.

摘要翻译： 振动检测装置包括：振动量检测单元，至少包括作为用于检测振动量的部分的振动量传感器，并输出作为表示检测到的振动量的信号的振动检测信号，以及高通滤波器 被配置为去除要叠加在所述振动检测信号上的直流分量; 状态检测单元，被配置为检测使得结果对由所述振动量传感器检测到的振动量进行特定改变的特定状态; 以及输入控制单元，被配置为响应于所述状态检测单元检测到的所述特定状态，防止所述振动量检测信号被输入到所述高通滤波器。

公开(公告)号：US07803801B2

公开(公告)日：2010-09-28

申请号：US11363563

申请日：2006-02-28

申请人： Yoshitoshi Kodama ,  Satoru Noji ,  Katsuaki Imamura ,  Ryo Mizojiri ,  Kenta Aoki ,  Hideo Takagi ,  Yuichi Naka ,  Goro Ito ,  Kiyotaka Shinoda ,  Akihito Fujiwara ,  Kazunori Kurihara ,  Masaru Tanaka

发明人： Yoshitoshi Kodama ,  Satoru Noji ,  Katsuaki Imamura ,  Ryo Mizojiri ,  Kenta Aoki ,  Hideo Takagi ,  Yuichi Naka ,  Goro Ito ,  Kiyotaka Shinoda ,  Akihito Fujiwara ,  Kazunori Kurihara ,  Masaru Tanaka

IPC分类号： C07D401/00 ,  A61K31/47

CPC分类号： C07D417/14

摘要： The present invention relates to an aminopyridine compound represented by the following general formula (I) or a salt thereof and an Syk inhibitor containing the compound or a salt thereof as an active ingredient. Here, X1, X2, X3, Z, Y1, Y2 represent a carbon atom or a nitrogen atom, R, R1, R5, R6 represent a hydrogen atom, an alkyl group, etc., and R7 represents a hydrogen atom, a halogen atom, a nitro group, a cyano group, —CpH2(p-1)(Ra1)(Ra2)—O—Ra3, —C(═O)—Rd1, a 5- or 6-membered saturated heterocyclic group, an aromatic heterocyclic group, —N(Rh1)(Rh2), etc. The aminopyridine compound of the present invention has not only high Syk inhibitory activity but also properties to selectively inhibit Syk.

摘要翻译： 本发明涉及由以下通式（I）表示的氨基吡啶化合物或其盐和含有该化合物或其盐作为有效成分的Syk抑制剂。 这里，X1，X2，X3，Z，Y1，Y2表示碳原子或氮原子，R，R1，R5，R6表示氢原子，烷基等，R7表示氢原子，卤素 原子，硝基，氰基，-CpH2（p-1）（Ra1）（Ra2）-O-Ra3，-C（= O）-Rd1，5或6元饱和杂环基，芳香族 杂环基，-N（Rh1）（Rh2）等。本发明的氨基吡啶化合物不仅具有高的Syk抑制活性，而且具有选择性抑制Syk的性质。