摘要:
A negative type photoresist composition comprising a light-sensitive s-triazine compound represented by formula (I), an acid-crosslinkable material, and an alkali soluble resin: ##STR1## wherein R.sub.1 and R.sub.2, which may be the same or different, each represents a hydrogen atom, an alkyl group, a substituted alkyl group, an aryl group, a substituted aryl group, a group represented by formula (II) or (III), or R.sub.1 and R.sub.2 may form a heterocyclic group consisting of non-metal atoms bonded to a nitrogen atom; R.sub.3 and R.sub.4 each represent a hydrogen atom, a halogen atom, an alkyl group, or an alkoxy group; X and Y, which may be the same or different, each represents a chlorine atom or a bromine atom; and m and n each represents 0, 1 or 2; ##STR2## wherein R.sub.5 represents an alkyl group, a substituted alkyl group, an aryl group, or a substituted aryl group; and R.sub.6 and R.sub.7, which may be the same or different, each represents a hydrogen atom, an alkyl group, a substituted alkyl group, an aryl group, or a substituted aryl group.
摘要:
A positive-working photoresist composition is disclosed, which comprises (1) a light-sensitive material obtained by reacting a polyhydroxy compound containing at least one group represented by the following general formula (I) per molecule with at least one of 1,2-naphthoquinonediazido-5-sulfonyl chloride and 1,2-naphthoquinonediazido-4-sulfonyl chloride, and (2) an alkali-soluble novolak resin: ##STR1## wherein R.sub.1 and R.sub.2 each represents a hydrogen atom or a C.sub.1 -C.sub.4 straight or branched alkyl or alkoxy group, provided that R.sub.1 and R.sub.2 do not represent hydrogen atoms at the same time; and X represents a divalent organic group.
摘要:
A positive-working photoresist composition containing an alkali-soluble novolak resin and a photosensitive compound represented by the formula ##STR1## wherein D.sub.1 and D.sub.2, which may be the same or different, each represents a 1,2-naphthoquinonediazido-5-sulfonyl group or a 1,2-naphthoquinonediazido-4-sulfonyl group; R.sub.1 and R.sub.2, which may be the same or different, each represents an alkoxy group, or an alkyl ester group; and a, b, c, and d each is 0 or an integer from 1 to 5, provided that (a+b).gtoreq.1 and (c+d).gtoreq.1.The photoresist composition is excellent in sensitivity and resolving power and forms a resist pattern having good sectional shape and high heat resistance on, for example, a semiconductor. The photoresist composition is also applicable for forming a resist pattern having a line width of less than 1 .mu.m.
摘要:
A positive-working photoresist composition is disclosed, which comprises a light-sensitive substance of 1,2-naphthoquinonediazide-4- and/or -5-sulfonate of 2,3,4,3',4',5'-hexahydroxybenzophenone and an alkali-soluble novolak resin dissolved in ethyl lactate or methyl lactate.
摘要:
A positively working resist material is disclosed, comprising a compound having at least one silyl ether group and capable of directly dissociating an Si-O-C bond upon irradiation with far ultraviolet rays, X-rays, an electron beam, or an ion beam. The resist material has high sensitivity to high energy radiation, excellent resistance to dry etching, and can be developed with an alkaline aqueous solution.
摘要:
A positive photoresist composition comprising an alkali-soluble novolak resin and a 1,2-quinonediazide compound is described, wherein the alkali-soluble novolak resin contains a novolak resin to be obtained by condensing a mixture of (a) at least one phenol represented by the following formula (1) and at least one compound represented by the following formula (2) and (b) at least one aldehyde: ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 are the same or different and each represents a hydrogen atom, a hydroxyl group, a halogen atom, an alkyl group, an alkoxy group, an alkenyl group, an aryl group, an aralkyl group, an alkoxycarbonyl group or an arylcarbonyl group; R.sub.4, R.sub.5, R.sub.6 and R.sub.7 are the same or different and each represents a hydrogen atom, a hydroxyl group, a halogen atom, an alkyl group, a cycloalkyl group, an alkoxy group, an alkenyl group, an aryl group or an aralkyl group; and n represents an integer of from 4 to 7.
摘要:
A micropattern-forming, light sensitive resin composition is disclosed. The composition comprises (a) a novolak resin comprising a condensate between formaldehyde and a mixture of m-cresol and p-cresol with a m-cresol to p-cresol charging weight ratio of from 45/55 to 60/40, wherein the novolak resin has the following characteristics: (i) a dissolving rate of 20 to 800 .ANG./sec in an aqueous solution of tetramethylammonium hydroxide (TMAH) and an alkali activity of 0.131N, (ii) a weight average molecular weight of 1000 to 6000 calculated as polystyrene equivalent, and (iii) a non-exposed dissolving rate of equal to or more than 100 .ANG./sec in an aqueous solution of TMAH with an alkali activity of 0.262N; (b) a light-sensitive substance of 1,2-naphthoquinonediazide-4-sulfonyl ester, and (c) a solvent capable of dissolving the novolak resin and the light-sensitive substance; wherein the novolak resin, the light-sensitive substance, and the solvent are present in such amounts that a 1.0 micron thick resist formed of the material has an optical density at 382 nm of 0.1 to 0.4 .mu.m.sup.-1. Also described is a micropattern-forming process having the steps of: (1) spin coating a substrate with the light-sensitive resin composition; (2) drying the light-sensitive composition; (3) exposing the dried light-sensitive composition using deep UV having a wavelength not longer than about 320 nm; and (4) developing the exposed light-sensitive composition.
摘要:
A composition, useful for its excellent resolution, sensitivity, development properties, and heat resistance, having an alkali soluble resin and a quinonediazide compound as essential ingredients, and further containing at least one polyhydroxy compound represented by the following formula (I) or (II): ##STR1## wherein R's, which may be the same or different, each represents a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group, an alkoxy group or --CH.sub.2 N--(--CH.sub.2 COOH).sub.2 ; X represents a --C(.dbd.O)-- group or an --SO.sub.2 -- group; m is an integer of 1 to 3; and n is an integer of 1 to 4.
摘要:
Disclosed is a positive type photoresist composition comprising an alkali-soluble resin, a quinone diazide compound and a compound represented by the following general formula (I): ##STR1## wherein R.sub.1, R.sub.2, R.sub.3 and R.sub.4 which may be the same or different and in which four groups for each group may be different from each other at the same time, each represents a hydrogen atom, a hydroxyl group, a halogen atom, an alkyl group, an alkoxy group, a nitro group, an alkenyl group, an aryl group, an aralkyl group, an alkoxycarbonyl group, an arylcarbonyl group, an acyloxy group, an acyl group, an aryloxy group or an aralkoxy group; a, b, d and e each represents 0 or an integer 1 to 3; and c represents 0 or 1, with the proviso that a, b, c, d and e satisfy the relationship (a+b+c+d+e.gtoreq.2), at least one of a and d is 1 or more and at least one of b and e is 1 or more.
摘要翻译:公开了一种正型光致抗蚀剂组合物,其包含碱溶性树脂,醌二叠氮化合物和由以下通式(I)表示的化合物:其中R 1,R 2,R 3和R 4可以相同 或者不同,并且每个基团的四个基团可以同时彼此不同,各自表示氢原子,羟基,卤素原子,烷基,烷氧基,硝基,烯基 芳基,芳烷基,烷氧基羰基,芳基羰基,酰氧基,酰基,芳氧基或芳烷氧基; a,b,d和e各自表示0或整数1〜3; 并且c表示0或1,条件是a,b,c,d和e满足关系式(a + b + c + d + e> / = 2),a和d中的至少一个为1或更大 b和e中的至少一个为1以上。
摘要:
A positive photoresist composition includes an alkali-soluble resin, a quinonediazide compound and a compound selected from the group consisting of compounds represented by formulae (I), (II) and (III): ##STR1## wherein R.sub.1 to R.sub.27, which may be the same or different, each represents a hydrogen atom, hydroxyl group, halogen atom, alkyl group, alkoxy group, nitro group, alkenyl group, aryl group, aralkyl group, alkoxycarbonyl group, arylcarbonyl group, acyloxy group, acyl group, aryloxy group or aralkoxy group; ##STR2## wherein R.sub.31 represents an organic group, single bond, ##STR3## R.sub.32 represents a hydrogen atom, monovalent organic group or ##STR4## R.sub.33 to R.sub.37, which may be the same or different, and in which not all four groups for each of R.sub.33 to R.sub.37 may be the same at the same time, each represents a hydrogen atom, hydroxyl group, halogen atom, alkyl group, alkoxy group or alkenyl group, with the proviso that at least one of R.sub.33 to R.sub.35 is a hydroxyl group; X represents a divalent organic group; and m represents an integer 0 or 1; ##STR5## wherein R.sub.41 to R.sub.44, which may be the same or different and in which not all four groups for each of R.sub.41 to R.sub.44 may be the same at the same time, each represents a hydrogen atom, hydroxyl group, halogen atom, alkyl group, alkoxy group or alkenyl group; R.sub.45 and R.sub.46 each represents a hydrogen atom, alkyl group or ##STR6## a and c each represents an integer 0 or 1; and b represents an integer from 1 to 4.
摘要翻译:正型光致抗蚀剂组合物包括碱溶性树脂,醌二叠氮化合物和选自由式(I),(II)和(III)表示的化合物的化合物:其中R 1至R 27, 可以相同或不同,分别表示氢原子,羟基,卤素原子,烷基,烷氧基,硝基,烯基,芳基,芳烷基,烷氧基羰基,芳基羰基,酰氧基,酰基, 芳氧基或芳烷氧基; (II)其中R31表示有机基团,单键,R32表示氢原子,一价有机基团或R33至R37,其可以相同或不同,并且其中并不全部为四 R 33〜R 37各自可以相同,各自表示氢原子,羟基,卤素原子,烷基,烷氧基或烯基,条件是R 33〜R 35中的至少一个为 羟基; X表示二价有机基团; m表示0或1的整数; (III)其中R41〜R44可以相同或不同,并且其中R41至R44中的每一个不是全部四个基团可以同时相同,各自表示氢原子,羟基,卤素 原子,烷基,烷氧基或烯基; R 45和R 46各自表示氢原子,烷基或者a和c各自表示0或1的整数; b表示1〜4的整数。