公开(公告)号：US20170170065A1

公开(公告)日：2017-06-15

申请号：US15377141

申请日：2016-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki KITAMURA ,  Akira SHIMIZU ,  Yosuke WATANABE

IPC: H01L21/768 ,  C23C16/46 ,  C23C16/52 ,  H01L21/285 ,  C23C16/26

CPC classification number: C23C16/46 ,  C23C16/045 ,  C23C16/26 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76877

Abstract: A carbon film forming method including: forming a first carbon film so that the first carbon film is embedded in the step shape portion by supplying a film forming gas including a hydrocarbon-based carbon source gas to the process target object; etching the first carbon film so that a V-shaped etching region, which is wide in a frontage portion of the step shape portion and becomes narrow as going to a bottom portion of the step shape portion, is formed in the first carbon film existing within the step shape portion, by supplying an etching gas to the process target object; and forming a second carbon film so that the second carbon film is embedded in the etching region by supplying a film forming gas including a hydrocarbon-based carbon source gas to the process target object, in a state where the process target object is heated.

公开(公告)号：US20160251755A1

公开(公告)日：2016-09-01

申请号：US15045792

申请日：2016-02-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki KITAMURA ,  Satoshi MIZUNAGA ,  Akira SHIMIZU ,  Akinobu KAKIMOTO

IPC: C23C16/02 ,  C23C16/26

CPC classification number: C23C16/0272 ,  C23C16/26

Abstract: A method for forming a carbon film on a process surface to be processed of a workpiece includes forming a seed layer on the process surface of the workpiece by supplying an aminosilane-based gas, an aminosilane-based gas having high-order equal to or higher than that of aminodisilane, or a nitrogen-containing heterocyclic compound gas onto the process surface; and forming the carbon film on the process surface on which the seed layer is formed by supplying a hydrocarbon-based carbon source gas and a thermal decomposition temperature lowering gas for lowering a thermal decomposition temperature of the hydrocarbon-based carbon source gas onto the process surface on which the seed layer is obtained, and by setting a film formation temperature to be lower than the thermal decomposition temperature of the hydrocarbon-based carbon source gas.

Abstract translation: 在工件的加工面上形成碳膜的方法包括：通过供给氨基硅烷系气体，高等级以上的氨基硅烷系气体，在工件的加工面上形成种子层 或氨基二硅烷，或含氮杂环化合物气体加到工艺表面上; 以及通过提供烃类碳源气体和用于将烃类碳源气体的热分解温度降低到工艺表面上的热分解降温气体，在其上形成种子层的工艺表面上形成碳膜 在其上获得种子层，并且通过将成膜温度设定为低于烃类碳源气体的热分解温度。

公开(公告)号：US20160126106A1

公开(公告)日：2016-05-05

申请号：US14887685

申请日：2015-10-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira SHIMIZU ,  Masayuki KITAMURA

IPC: H01L21/3105 ,  C30B25/18 ,  C23C16/52 ,  C30B25/16 ,  H01L21/02 ,  H01L21/285

CPC classification number: C30B25/18 ,  C23C16/04 ,  C23C16/26 ,  C23C16/402 ,  C23C16/52 ,  C23C16/56 ,  C30B25/165 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/28568

Abstract: There is provided a selective growth method of selectively growing a thin film on exposed surfaces of an underlying insulation film and an underlying metal film, which includes: selectively growing a film whose thickness is decreased by combustion on the underlying metal film using metal of the underlying metal film as a catalyst; and selectively growing a silicon oxide film on the underlying insulation film while combusting the film whose thickness is decreased by combustion.

Abstract translation: 提供了选择性地生长薄膜在下面的绝缘膜和下面的金属膜的暴露表面上的选择性生长方法，其包括：使用下面的金属的金属，选择性地生长其厚度通过燃烧在下面的金属膜上而降低的膜 金属膜作催化剂; 并且在通过燃烧使其厚度减小的膜燃烧时，在下面的绝缘膜上选择性地生长氧化硅膜。

公开(公告)号：US20150318170A1

公开(公告)日：2015-11-05

申请号：US14698273

申请日：2015-04-28

Applicant: TOKYO ELECTRON LIMITED ,  IWATANI CORPORATION

Inventor： Kazuo YABE ,  Akira SHIMIZU ,  Koichi IZUMI ,  Masahiro FURUTANI

IPC: H01L21/02

CPC classification number: H01L21/67017 ,  C23C16/402 ,  C23C16/45534 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02219 ,  H01L21/02236 ,  H01L21/0228

Abstract: A film forming method for obtaining a thin film by laminating molecular layers of oxide on a surface of a substrate in a vacuum atmosphere includes performing a cycle a plurality of times. The cycle includes: supplying a source gas containing a source to the substrate in a vacuum vessel to adsorb the source onto the substrate; forming an ozone atmosphere containing ozone having a concentration not less than that where a chain decomposition reaction is caused in the vacuum vessel; and forcibly decomposing the ozone by supplying energy to the ozone atmosphere to generate active species of oxygen, and oxidizing the source adsorbed onto the surface of the substrate by the active species to obtain the oxide.

Abstract translation: 通过在真空气氛中层叠基板的表面上的氧化物的分子层来获得薄膜的成膜方法包括进行多次循环。 该循环包括：在真空容器中将含有源的源气体供应到衬底以将源吸附到衬底上; 形成含有浓度不低于在真空容器中引起链分解反应的臭氧的臭氧的臭氧气氛; 通过向臭氧气氛供给能量而强制分解臭氧，生成活性物质的氧，并且通过活性种氧化吸附在基材表面上的源，得到氧化物。