公开(公告)号：US11114304B2

公开(公告)日：2021-09-07

申请号：US16564851

申请日：2019-09-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki Katsunuma ,  Toru Hisamatsu ,  Shinya Ishikawa ,  Yoshihide Kihara ,  Masanobu Honda ,  Maju Tomura ,  Sho Kumakura

IPC: H01L21/311 ,  H01L21/02

Abstract: A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.

公开(公告)号：US20200381265A1

公开(公告)日：2020-12-03

申请号：US16999145

申请日：2020-08-21

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Toru Hisamatsu ,  Sho Kumakura ,  Ryuichi Asako ,  Shinya Ishikawa ,  Masanobu Honda

IPC: H01L21/3213 ,  H01J37/32 ,  H01L21/02 ,  G03F7/40 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/768

Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.

公开(公告)号：US10777425B2

公开(公告)日：2020-09-15

申请号：US16229036

申请日：2018-12-21

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Toru Hisamatsu ,  Sho Kumakura ,  Ryuichi Asako ,  Shinya Ishikawa ,  Masanobu Honda

IPC: H01L21/3213 ,  H01J37/32 ,  H01L21/02 ,  G03F7/40 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/768

Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.

公开(公告)号：US10700166B2

公开(公告)日：2020-06-30

申请号：US13904315

申请日：2013-05-29

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Kai ,  Shinya Ishikawa ,  Yuji Kamikawa ,  Shuichi Nagamine ,  Naoki Shindo

IPC: B08B9/032 ,  H01L29/16 ,  B05B15/55 ,  B05B15/555 ,  B08B3/10 ,  H01L21/67 ,  H01L29/78 ,  B05B1/36

Abstract: A nozzle cleaning device is capable of uniformly cleaning a nozzle from a front end of the nozzle to an upper part thereof. The nozzle cleaning device includes a storage tank, a liquid discharging portion and an overflow discharging portion. The storage tank has a cylindrical inner peripheral surface and is configured to store therein a cleaning liquid that cleans a nozzle used in a substrate process. The liquid discharging portion is configured to discharge the cleaning liquid into the storage tank toward a position eccentric with respect to a central axis of the cylindrical inner peripheral surface to store the cleaning liquid within the storage tank and configured to form a vortex flow of the cleaning liquid revolving within the storage tank. The overflow discharging portion is configured to discharge the cleaning liquid that overflows the storage tank.

公开(公告)号：US20130319470A1

公开(公告)日：2013-12-05

申请号：US13904315

申请日：2013-05-29

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Kai ,  Shinya Ishikawa ,  Yuji Kamikawa ,  Shuichi Nagamine ,  Naoki Shindo

IPC: B08B9/032

CPC classification number: H01L29/1608 ,  B05B1/36 ,  B05B15/555 ,  B05B15/557 ,  B08B3/102 ,  B08B9/0321 ,  B08B9/0328 ,  H01L21/67051 ,  H01L29/7813

Abstract: A nozzle cleaning device is capable of uniformly cleaning a nozzle from a front end of the nozzle to an upper part thereof. The nozzle cleaning device includes a storage tank, a liquid discharging portion and an overflow discharging portion. The storage tank has a cylindrical inner peripheral surface and is configured to store therein a cleaning liquid that cleans a nozzle used in a substrate process. The liquid discharging portion is configured to discharge the cleaning liquid into the storage tank toward a position eccentric with respect to a central axis of the cylindrical inner peripheral surface to store the cleaning liquid within the storage tank and configured to form a vortex flow of the cleaning liquid revolving within the storage tank. The overflow discharging portion is configured to discharge the cleaning liquid that overflows the storage tank.

Abstract translation: 喷嘴清洁装置能够从喷嘴的前端到其上部均匀地清洁喷嘴。 喷嘴清洁装置包括储罐，液体排出部分和溢流排放部分。 储罐具有圆筒形的内周面，并且构造成在其中存储清洁基板工艺中使用的喷嘴的清洗液。 液体排出部分被配置成将清洁液体排出到相对于圆筒形内周面的中心轴线偏心的位置，以将清洗液储存在储罐内，并且构造成形成清洁的涡流 液体在储罐内旋转。 溢流排出部被配置为排出溢出储罐的清洗液。