公开(公告)号：US20180301346A1

公开(公告)日：2018-10-18

申请号：US15952328

申请日：2018-04-13

Applicant: Tokyo Electron Limited

Inventor： Sho Kumakura ,  Masahiro Tabata

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31144 ,  H01L29/66742

Abstract: An etching method of etching a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The etching method includes a first process of forming a film on the end surface of each protrusion region; a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process; and a third process of anisotropically etching the one or more end surfaces exposed through the second process atomic layer by atomic layer. The processing target layer contains silicon nitride, and the film contains silicon oxide.

公开(公告)号：US20180301332A1

公开(公告)日：2018-10-18

申请号：US15952359

申请日：2018-04-13

Applicant: Tokyo Electron Limited

Inventor： Sho Kumakura ,  Masahiro Tabata

IPC: H01L21/02 ,  H01L21/3065

Abstract: A technique regarding film formation capable of forming a three-dimensional pattern successfully is provided. A film forming method for a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The film forming method includes a first process of forming a film on the end surface of each protrusion region; and a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process.

公开(公告)号：US20250051915A1

公开(公告)日：2025-02-13

申请号：US18933255

申请日：2024-10-31

Applicant: Tokyo Electron Limited

Inventor： Yuta NAKANE ,  Sho Kumakura

IPC: C23C16/455 ,  C23C16/505 ,  H01J37/32

Abstract: A plasma processing method includes (a) providing a substrate including a first region including a first material and a second region including a second material different from the first material; (b) supplying a modifying gas for modifying a surface of the first region and a carbon-containing precursor; (c) forming a modified layer by modifying the surface of the first region with plasma generated from a gas mixture including the modifying gas and the carbon-containing precursor by supplying first radio frequency power; and (d) removing the modified layer in a manner that the modified layer and the carbon-containing precursor are caused to react with each other by stopping supply of the first radio frequency power or supplying second radio frequency power smaller than the first radio frequency power.

公开(公告)号：US11574806B2

公开(公告)日：2023-02-07

申请号：US15930637

申请日：2020-05-13

Applicant: Tokyo Electron Limited

Inventor： Sho Kumakura ,  Masahiro Tabata

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L29/66

Abstract: A technique regarding film formation capable of forming a three-dimensional pattern successfully is provided. A film forming method for a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The film forming method includes a first process of forming a film on the end surface of each protrusion region; and a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process.

公开(公告)号：US11450537B2

公开(公告)日：2022-09-20

申请号：US16804807

申请日：2020-02-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sho Kumakura ,  Hironari Sasagawa ,  Maju Tomura ,  Yoshihide Kihara

IPC: H01L21/67 ,  H01L21/033 ,  C23C16/50 ,  C23C16/46 ,  C23C16/02 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/32

Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.

公开(公告)号：US11139169B2

公开(公告)日：2021-10-05

申请号：US16902209

申请日：2020-06-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sho Kumakura ,  Satoshi Ohuchida ,  Maju Tomura

IPC: H01L21/033 ,  H01L21/67 ,  H01L21/311

Abstract: An etching method and an etching apparatus improve the shape of a mask deformed by an etching process. The etching method for etching a film with plasma includes a step of providing a substrate, an etching step, and a correction step. In the step of providing a substrate, a substrate having a mask formed on a first film is provided. In the etching step, the first film is etched with plasma generated from a first gas containing Xe, Kr, or Rn so that an aspect ratio of a hole or a groove formed in the first film is 30 or more. In the correction step, the shape of the mask is corrected with plasma generated from a second gas.

公开(公告)号：US10916420B2

公开(公告)日：2021-02-09

申请号：US16555633

申请日：2019-08-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro Tabata ,  Toru Hisamatsu ,  Maju Tomura ,  Sho Kumakura ,  Hironari Sasagawa

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  H01L21/311 ,  C23C16/50 ,  C23C16/455 ,  C23C16/02 ,  C23C16/56 ,  C23C16/46

Abstract: A substrate processing method includes: providing a substrate in a processing container; selectively forming a first film on a surface of a substrate by plasma enhanced vapor deposition (PECVD); and forming a second film by atomic layer deposition (ALD) in a region of the substrate where the first film does not exist. The second film is formed by repeatedly performing a sequence including: forming a precursor layer on the surface of the substrate; purging an interior of the processing container after forming of the precursor; converting the precursor layer into the second film; and purging a space in the processing container after the converting. A plasma processing apparatus performing the method is also provided.

公开(公告)号：US10600660B2

公开(公告)日：2020-03-24

申请号：US16394089

申请日：2019-04-25

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Sho Kumakura

IPC: H01L21/67 ,  H01L21/311 ,  H01J37/00 ,  H01J37/32

Abstract: Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.

公开(公告)号：US20190252217A1

公开(公告)日：2019-08-15

申请号：US16394089

申请日：2019-04-25

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Sho Kumakura

IPC: H01L21/67 ,  H01J37/00 ,  H01L21/311

CPC classification number: H01L21/67069 ,  H01J37/00 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67

Abstract: Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.

公开(公告)号：US20190198350A1

公开(公告)日：2019-06-27

申请号：US16229036

申请日：2018-12-21

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Toru Hisamatsu ,  Sho Kumakura ,  Ryuichi Asako ,  Shinya Ishikawa ,  Masanobu Honda

IPC: H01L21/3213 ,  G03F7/40 ,  H01L21/02 ,  H01J37/32

Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.