公开(公告)号：US07787220B2

公开(公告)日：2010-08-31

申请号：US11391278

申请日：2006-03-29

申请人： Tomohito Mizuno ,  Daisuke Miyauchi

发明人： Tomohito Mizuno ,  Daisuke Miyauchi

IPC分类号： G11B5/33

CPC分类号： B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/1171

摘要： A free layer of an MR element incorporates a first layer, a second layer, a third layer, a fourth layer, a fifth layer and a sixth layer that are stacked in this order on a nonmagnetic conductive layer. The absolute value of magnetostriction constant of the free layer is 1×10−6 or smaller. The coercivity of the free layer is 20×79.6 A/m or smaller. The first layer is made of an alloy containing ‘a’ atomic percent cobalt and (100−a) atomic percent iron wherein ‘a’ falls within a range of 20 to 50 inclusive. The second layer is made of an alloy containing ‘b’ atomic percent cobalt and (100−b) atomic percent iron wherein ‘b’ falls within a range of 70 to 90 inclusive. In addition, oxidation treatment is given to a surface of the second layer farther from the first layer.

摘要翻译： MR元件的自由层包括在非磁性导电层上依次层叠的第一层，第二层，第三层，第四层，第五层和第六层。 自由层的磁致伸缩常数的绝对值为1×10-6以下。 自由层的矫顽力为20×79.6A / m以下。 第一层由含有“a”原子百分比的钴和（100-a）原子百分比的铁的合金制成，其中'a'在20至50的范围内。 第二层由含有'b'原子％的钴和（100-b）原子百分比的铁的合金制成，其中'b'落在70-90的范围内。 此外，对第二层的离第一层更远的表面进行氧化处理。

公开(公告)号：US07715153B2

公开(公告)日：2010-05-11

申请号：US11218719

申请日：2005-09-06

申请人： Tomohito Mizuno ,  Daisuke Miyauchi ,  Masashi Sano

发明人： Tomohito Mizuno ,  Daisuke Miyauchi ,  Masashi Sano

IPC分类号： G11B5/33

CPC分类号： G11B5/3929 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/16 ,  H01F10/3272 ,  H01F10/3295

摘要： A magneto-resistive effect element includes a free layer having a magnetization direction which varies with respect to an external magnetic field; a pinned layer which includes a stacked structure comprising an outer pinned layer which has a magnetization direction that is fixed with respect to the external magnetic field, a non-magnetic intermediate layer which is made of ruthenium with a thickness of about 0.4 nm, and an inner pinned layer with a thickness of 3 nm or more, wherein the inner pinned layer has a magnetization direction which is fixed with respect to the external magnetic field due to anti-ferromagnetic coupling with the outer pinned layer via the non-magnetic intermediate layer; and a spacer layer sandwiched between the free layer and the inner pinned layer. Sense current flows through the pinned layer, the spacer layer, and the free layer substantially in a stacked direction.

摘要翻译： 磁阻效应元件包括具有相对于外部磁场而变化的磁化方向的自由层; 钉扎层，其包括堆叠结构，包括具有相对于外部磁场固定的磁化方向的外部被钉扎层，由约0.4nm的厚度的钌制成的非磁性中间层，以及 内部被钉扎层，其中内部钉扎层具有通过非磁性中间层与外部钉扎层的反铁磁耦合而相对于外部磁场固定的磁化方向; 以及夹在自由层和内部钉扎层之间的间隔层。 感应电流基本上沿堆叠方向流过被钉扎层，间隔层和自由层。

公开(公告)号：US20090086383A1

公开(公告)日：2009-04-02

申请号：US11865384

申请日：2007-10-01

申请人： Shinji Hara ,  Daisuke Miyauchi ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Takahiko Machita

发明人： Shinji Hara ,  Daisuke Miyauchi ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Takahiko Machita

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307

摘要： The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer. Thus, there is a nitride of high covalent bonding capability formed at the surface of junction between the semiconductor oxide layer and the interface protective layer, so that the migration of oxygen from the semiconductor oxide layer to the insulating layer is inhibited; even when the device undergoes heat and stress in the process, fluctuations and deteriorations of device characteristics are held back.

摘要翻译： 本发明提供了包括间隔层的CPP（电流垂直于平面）结构（CPP-GMR器件）的巨磁阻效应器件，以及与夹在它们之间的间隔层堆叠在一起的第一铁磁层和第二铁磁层 ，其中感测电流在层叠方向上通过，其中第一铁磁层和第二铁磁层的功能使得两个磁体的磁化方向之间产生的角度根据外部磁场而相对地改变，所述间隔层包含半导体 氧化物层和氮元素界面保护层设置在形成全部或一部分所述间隔层的半导体氧化物层与绝缘层接触的位置。 因此，在半导体氧化物层和界面保护层的结的表面形成有高共价键合能力的氮化物，从而抑制氧从半导体氧化物层向绝缘层的迁移; 即使该装置在该过程中经受热和应力，阻止装置特性的波动和劣化。

公开(公告)号：US07510787B2

公开(公告)日：2009-03-31

申请号：US11671248

申请日：2007-02-05

申请人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Daisuke Miyauchi ,  Koji Shimazawa

发明人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Daisuke Miyauchi ,  Koji Shimazawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  H01F10/1936 ,  H01F10/3259 ,  H01F10/3272 ,  H01L43/10 ,  Y10T428/1121

摘要： An MR element has a pinned layer, a spacer layer, and a free layer successively stacked in the order named. The free layer includes a Heusler alloy layer in at least a region thereof adjacent to the spacer layer. An oxide is distributed as sea-islands in the interface between the Heusler alloy layer and the spacer layer. The Heusler alloy layer virtually has a stoichiometric composition. The oxide has an RA in the range from 0.10 Ωμm2 to 0.36 Ωμm2.

摘要翻译： MR元件具有钉扎层，间隔层和自由层，依次按顺序堆叠。 自由层在与间隔层相邻的至少一个区域中包括Heusler合金层。 在Heusler合金层和间隔层之间的界面中，氧化物作为海岛分布。 Heusler合金层实际上具有化学计量组成。 该氧化物的RA为0.10〜2μm，峰值为0.36μmol。

公开(公告)号：US20070086120A1

公开(公告)日：2007-04-19

申请号：US11581478

申请日：2006-10-17

申请人： Koji Shimazawa ,  Daisuke Miyauchi ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

发明人： Koji Shimazawa ,  Daisuke Miyauchi ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B2005/3996

摘要： A magneto-resistive element has: a first stacked film assembly having a pinned layer, a spacer layer, and a free layer; a first electrode layer which is arranged such that the first layer is in contact with the first electrode layer on the other side of the first layer, the first electrode layer being made of a ferromagnetic material; and a second electrode layer which is arranged on a side that is opposite to the first electrode layer with regard to the first stacked film assembly. The first and second electrode layers are adapted to apply a sense current to the first stacked film assembly and the first layer in a direction that is perpendicular to layer surfaces. The first layer is made of gold, silver, copper, ruthenium, rhodium, iridium, chromium or platinum, or an alloy thereof.

摘要翻译： 磁阻元件具有：具有钉扎层，间隔层和自由层的第一层叠膜组件; 第一电极层，被布置成使得第一层与第一层的另一侧上的第一电极层接触，第一电极层由铁磁材料制成; 以及相对于第一层叠膜组件布置在与第一电极层相对的一侧的第二电极层。 第一和第二电极层适于在垂直于层表面的方向上向第一堆叠膜组件和第一层施加感测电流。 第一层由金，银，铜，钌，铑，铱，铬或铂或其合金制成。

公开(公告)号：US20070019341A1

公开(公告)日：2007-01-25

申请号：US11490112

申请日：2006-07-21

申请人： Tomohito Mizuno ,  Daisuke Miyauchi

发明人： Tomohito Mizuno ,  Daisuke Miyauchi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/16

摘要： An MR device includes a magnetization pinned film having a nonmagnetic intermediate layer positioned on the opposite side of a magnetization free layer while sandwiching a nonmagnetic spacer layer and made of RuCu. In the case of passing read current in the stacking direction via lower and upper electrodes, decrease in a resistance change amount caused by a second magnetization pinned layer can be suppressed. Further, a first magnetization pinned layer and the second magnetization pined layer which are thicker can be antiferromagnetically coupled to each other in magnetic fields in a wider range. Thus, both increase in the resistance change amount and magnetic field stability can be achieved. Therefore, while maintaining stable operations by reducing the influence of external noise, the invention can address higher recording density by the increase in the resistance change amount as a whole.

摘要翻译： MR装置包括具有位于无磁化层的相对侧上的非磁性中间层的磁化固定膜，同时夹着非磁性间隔层并由RuCu制成。 在通过下电极和上电极在层叠方向上传递读取电流的情况下，可以抑制由第二磁化固定层引起的电阻变化量的降低。 此外，较厚的第一磁化固定层和第二磁化层可以在更宽范围内的磁场中彼此反铁磁耦合。 因此，可以实现电阻变化量和磁场稳定性的增加。 因此，通过减少外部噪声的影响来保持稳定的动作，本发明能够通过整体上的电阻变化量的增加来解决更高的记录密度。

公开(公告)号：US20060203397A1

公开(公告)日：2006-09-14

申请号：US11218719

申请日：2005-09-06

申请人： Tomohito Mizuno ,  Daisuke Miyauchi ,  Masashi Sano

发明人： Tomohito Mizuno ,  Daisuke Miyauchi ,  Masashi Sano

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3929 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/16 ,  H01F10/3272 ,  H01F10/3295

摘要： A magneto-resistive effect element includes a free layer having a magnetization direction which varies with respect to an external magnetic field; a pinned layer which includes a stacked structure comprising an outer pinned layer which has a magnetization direction that is fixed with respect to the external magnetic field, a non-magnetic intermediate layer which is made of ruthenium with a thickness of about 0.4 nm, and an inner pinned layer with a thickness of 3 nm or more, wherein the inner pinned layer has a magnetization direction which is fixed with respect to the external magnetic field due to anti-ferromagnetic coupling with the outer pinned layer via the non-magnetic intermediate layer; and a spacer layer sandwiched between the free layer and the inner pinned layer. Sense current flows through the pinned layer, the spacer layer, and the free layer substantially in a stacked direction.

摘要翻译： 磁阻效应元件包括具有相对于外部磁场而变化的磁化方向的自由层; 钉扎层，其包括堆叠结构，包括具有相对于外部磁场固定的磁化方向的外部被钉扎层，由约0.4nm的厚度的钌制成的非磁性中间层，以及 内部被钉扎层，其中内部钉扎层具有通过非磁性中间层与外部钉扎层的反铁磁耦合而相对于外部磁场固定的磁化方向; 以及夹在自由层和内部钉扎层之间的间隔层。 感应电流基本上沿堆叠方向流过被钉扎层，间隔层和自由层。

公开(公告)号：US08472149B2

公开(公告)日：2013-06-25

申请号：US11865384

申请日：2007-10-01

申请人： Shinji Hara ,  Daisuke Miyauchi ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Takahiko Machita

发明人： Shinji Hara ,  Daisuke Miyauchi ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Takahiko Machita

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307

摘要： The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer. Thus, there is a nitride of high covalent bonding capability formed at the surface of junction between the semiconductor oxide layer and the interface protective layer, so that the migration of oxygen from the semiconductor oxide layer to the insulating layer is inhibited; even when the device undergoes heat and stress in the process, fluctuations and deteriorations of device characteristics are held back.

公开(公告)号：US07881021B2

公开(公告)日：2011-02-01

申请号：US12022538

申请日：2008-01-30

申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

摘要： A magnetoresistive device with CPP structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer and a magnetization direction control area that extends further rearward from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer to produce magnetizations of the said first and second ferromagnetic layers which are antiparallel with each other; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions.

摘要翻译： 一种具有CPP结构的磁阻器件，包括非磁性中间层，以及第一铁磁层和第二铁磁层，所述第一铁磁层和第二铁磁层层叠并形成有位于它们之间的所述非磁性中间层，其中所述第一和第二铁磁层中的每一个包括连接到 所述非磁性中间层和从所述非磁性中间层的后端的位置向后延伸的磁化方向控制区域; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，以产生与所述第一和第二铁磁层反平行的所述第一和第二铁磁层的磁化 彼此; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。

公开(公告)号：US20090290264A1

公开(公告)日：2009-11-26

申请号：US12126567

申请日：2008-05-23

申请人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

发明人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first, substantially soft magnetic shield layer positioned below and a second, substantially soft magnetic shield layer positioned above, which are located and formed such that the magnetoresistive effect is sandwiched between them from above and below, with a sense current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them. At least one of the first shield layer positioned below and the second shield layer positioned above is configured in a framework form having a planar shape (X-Y plane) defined by the width and length directions of the device. The framework has a front frame-constituting portion located on a medium opposite plane side in front and near where the magnetoresistive unit is positioned, and any other frame portion. The any other frame portion partially comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The bias magnetic field-applying layer is constructed by repeating the stacking of a multilayer unit at least twice or up to 50 times, wherein the multilayer unit comprises a nonmagnetic underlay layer and a high-coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently sent out to the front frame-constituting portion. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with a magnetic flux going all the way around the framework, and turns the magnetization of the front frame-constituting portion into a single domain. It is thus possible to make the domain control of the shield layers much more stable, achieve remarkable improvements in resistance to an external magnetic field, and make the operation of the device much more reliable.