Abstract:
To provide a solid electrolytic capacitor having a high capacitance and an excellent heat resistance. A solid electrolytic capacitor includes: an anode 2; a dielectric layer 3 provided on the surface of the anode 2; a first conductive polymer layer 4a provided on the dielectric layer 3; a second conductive polymer layer 4b provided on the first conductive polymer layer 4a; a third conductive polymer layer 4c provided on the second conductive polymer layer 4b; and a cathode layer provided on the third conductive polymer layer 4c, wherein the first conductive polymer layer 4a is made of a conductive polymer film formed by polymerizing pyrrole or a derivative thereof, the second conductive polymer layer 4b is made of a conductive polymer film formed by polymerizing thiophene or a derivative thereof, and the third conductive polymer layer 4c is made of a conductive polymer film formed by electropolymerizing pyrrole or a derivative thereof.
Abstract:
A semiconductor device is provided with: a delay circuit including a first delay unit that has a plurality of differential first delay elements which are respectively connected in series, a plurality pairs of first contacts which are respectively provided between the plurality of first delay elements, and a first output circuit that outputs a first delayed signal corresponding to a pair of first contacts selected from among the plurality pairs of first contacts, on receiving a first selection signal; a second delay unit that receives the first delayed signal, and that includes a plurality of single-ended second delay elements which are respectively connected in series, a plurality of second contacts which are respectively provided between the plurality of second delay elements, and a second output circuit that outputs a second delayed signal corresponding to a second contact selected from among the plurality of second contacts, on receiving a second selection signal; and a control circuit that outputs each of the first and second selection signals.
Abstract:
A memory system includes a clock generation circuit, a memory device, and a controller. The memory device includes output circuits and a temperature sensor, the output circuits configured to output data at an output timing obtained based on a clock signal supplied from the clock generation circuit. The controller includes input circuits that receive the data outputted from the memory device at an input timing obtained based on a clock signal supplied from the clock generation circuit and a correction value setting circuit that adjusts the input timing based on a temperature value from the temperature sensor.
Abstract:
A system including a controller and a memory chip. The controller includes first and second selection signal terminals supplying first and second selection signals, respectively, multiple first data terminals and multiple second data terminals. The memory chip includes a semiconductor substrate, third and fourth selection signal terminals provided on the semiconductor substrate and electrically coupled to the first and second selection signal terminals of the controller, respectively. Multiple third data terminals are provided on the semiconductor substrate and electrically coupled to the first data terminals of the controller, respectively. Multiple fourth data terminals are provided on the semiconductor substrate and electrically coupled to the second data terminals of the controller, respectively. The first and third data terminals communicate first data in response to the first selection signal. The second and fourth data terminals communicate second data in response to the second selection signal.
Abstract:
A semiconductor device is provided with: a delay circuit including a first delay unit that has a plurality of differential first delay elements which are respectively connected in series, a plurality pairs of first contacts which are respectively provided between the plurality of first delay elements, and a first output circuit that outputs a first delayed signal corresponding to a pair of first contacts selected from among the plurality pairs of first contacts, on receiving a first selection signal; a second delay unit that receives the first delayed signal, and that includes a plurality of single-ended second delay elements which are respectively connected in series, a plurality of second contacts which are respectively provided between the plurality of second delay elements, and a second output circuit that outputs a second delayed signal corresponding to a second contact selected from among the plurality of second contacts, on receiving a second selection signal; and a control circuit that outputs each of the first and second selection signals.
Abstract:
A DLL circuit includes a first phase comparing circuit that compares phases between an input clock signal and an output clock signal, a first delay circuit that delays the output clock signal, and a second phase comparing circuit that compares phases between the input clock signal and an output signal of the first delay circuit. A delay amount in the variable delay circuit is controlled based on a comparison result of the first phase comparing circuit and a comparison result of the second phase comparing circuit.
Abstract:
A PLL circuit includes a phase comparator for outputting a frequency control signal based on a result of comparison between phases of an input reference clock signal and a fed-back oscillation signal; an oscillation circuit, connected to the phase comparator, for outputting an oscillation signal having a frequency in accordance with the frequency control signal, a power source voltage, and a predetermined reference voltage; and a bias control circuit, connected to the oscillation circuit, for increasing either the potential difference between the reference voltage of the oscillation circuit and a ground voltage or the potential difference between the power source voltage of the oscillation circuit and the ground voltage. A transistor in the oscillation circuit can operate in a saturation area, thereby operating the PLL circuit at a high speed with a low power source voltage, without being easily affected by a variation in the temperature or other process conditions.
Abstract:
An information system with an enhanced effect in reducing jitter with a short period. An input clock signal CLKi is output via a voltage-controlled delay circuit 14 as an output clock signal CLKo, and an amount of delay in the voltage-controlled delay circuit 14 is controlled based on the result of comparison of a phase of the input clock signal CLKi and that of the output clock signal CLKo. A phase correction circuit 21 receives the input clock signal CLKi and the output clock signal CLKo. If, after the DLL circuit has become locked, the input clock signal and the output clock signal are out of phase relative to each other, the phase correction circuit 21 corrects the phase of the input clock signal CLKi based on a phase of the output clock signal CLKo to output a signal to the variable delay circuit 14 (FIG. 1).
Abstract:
Jitter is stably reduced. An input clock signal (CLKi) is outputted as an output clock signal (CLKo) via a voltage controlled delay circuit (12), and in addition a delay amount in the voltage controlled delay circuit (12) is controlled based on a result of a phase comparison of the input clock signal (CLKi) and the output clock signal (CLKo). A phase comparison result judging circuit (15) adds up results of phase comparison of the input clock signal (CLKi) and the output clock signal (CLKo) over a prescribed time, and controls the delay amount based on a distribution of addition results.
Abstract:
A pulse generation section generates a pulse which is at H-level for the predetermined period of time from the timing of the input signal DATA changing to L-level. A main output section outputs a signal of L-level with transistors P1, N1, and N2 turned ON, while the pulse generation section outputs a pulse. When the pulse falls, the transistors P1 and N1 are turned OFF, and a potential of an output node is held at L-level by resistors of a L-level holding section.