-
公开(公告)号：US20130213804A1
公开(公告)日：2013-08-22
申请号：US13881246
申请日：2011-12-15
申请人： Atsutoshi Arakawa , Yuki Ikeda
发明人： Atsutoshi Arakawa , Yuki Ikeda
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C23C14/3414 , G11B5/851 , H01F41/183
摘要： Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Pt is contained in an amount of 5 mol % or more, and the remainder is Co, wherein the target includes a base metal (A) and, within the base metal (A), a Co—Pt alloy phase (B) containing 40 to 76 mol % of Pt, and a metal or alloy phase (C), which is different from the phase (B) and is composed of Co or an alloy comprising Co as a main component. The present invention improves the leakage magnetic flux to provide a ferromagnetic material sputtering target that can perform stable discharge with a magnetron sputtering apparatus.
摘要翻译： 本发明提供一种含有金属含量为20摩尔％以下，含有5摩尔％以上的Pt，余量为Co的金属的铁磁材料溅射靶，其中，靶包含 贱金属（A）和贱金属（A）内含有40〜76摩尔％的Pt的Co-Pt合金相（B）和不同于相的金属或合金相（C） （B），由Co或Co组成的合金构成。 本发明改进了漏磁通量，从而提供可以用磁控溅射装置进行稳定放电的铁磁材料溅射靶。
-
22.发明申请公开(公告)号：US20120097535A1
公开(公告)日：2012-04-26
申请号：US13320840
申请日：2010-09-30
IPC分类号： C23C14/06
CPC分类号： C23C14/3414 , B22F2998/00 , C22C19/07 , C22C32/00 , C22C2202/02 , H01F41/183 , C22C32/0026 , B22F9/082
摘要： A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 μm or more and 150 μm or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.
摘要翻译： 一种铁磁溅射靶，其包含具有20摩尔％以下的Cr的组成的金属，余量为Co; 其特征在于，在所述基体金属（A）中，所述基体金属（A）和含有90重量％以上的Co的平坦相（B），所述相（B）的平均粒径为10μm， 多于150μm以下，相（B）的平均纵横比为1:2〜1:10。 本发明提供能够抑制溅射时的粒子产生的铁磁性溅射靶，提高通过磁通以通过磁控溅射装置实现稳定的放电。
-
公开(公告)号：US20080102022A1
公开(公告)日：2008-05-01
申请号：US11667676
申请日：2005-11-16
申请人： Atsutoshi Arakawa , Ryuichi Hirano
发明人： Atsutoshi Arakawa , Ryuichi Hirano
IPC分类号： C01B19/00
CPC分类号： C30B29/48 , C30B11/00 , C30B23/02 , H01L31/09 , H01L31/1832 , Y10S977/824
摘要： It is to define the resistivity and the contained amount of impurities of a CdTe system compound semiconductor single crystal and to provide a CdTe system compound semiconductor single crystal which is useful as a substrate for optical devices such as an infrared sensor and the like. In a CdTe system compound semiconductor single crystal for an optical device, a Group 1 (1A) element is included in a range of 5×1014 to 6×1015cm−3 in the crystal, a total amount of a Group 13 (3B) element and a Group 17 (7B) element included in the crystal is less than 2×1015cm−3 and less than a total amount of the Group 1 (1A) element, and resistivity of the crystal is in a range of 10 to 104 Ωcm.
摘要翻译： 为了限定CdTe系化合物半导体单晶的电阻率和含有量的杂质，提供可用作红外线传感器等的光学元件的基板的CdTe系化合物半导体单晶。 在用于光学器件的CdTe系统化合物半导体单晶中，组1（1A）元素包括在5×10 14至6×10 15 cm -3的范围内， -3，晶体中包含的第13族（3B）元素和第17（7B）族元素的总量小于2×10 15 cm > -3以下且小于第1族（1A）元素的总量，并且该结晶的电阻率在10〜104Ω·m范围内。
-
公开(公告)号：US20120241316A1
公开(公告)日：2012-09-27
申请号：US13513387
申请日：2010-10-21
申请人： Atsutoshi Arakawa
发明人： Atsutoshi Arakawa
CPC分类号： G11B5/851 , C22C19/03 , C22C19/07 , C22C38/002 , C22C38/08 , C22C38/10 , C22C38/105 , C23C14/3414 , H01F41/183
摘要： A magnetic sputtering target which contains B and is obtained by a melting and casting method, wherein the B content is 10 at % or more and 50 at % or less, and the remainder is one or more elements selected from Co, Fe, and Ni. Based on the method of the present invention, the sputtering target, in which gaseous impurities are few, there are no cracks and fractures, and segregation of its main constituent elements is minimal, is obtained. Consequently, when sputtered with a magnetron sputtering device comprising a DC power supply, this sputtering target yields a significant effect of being able to inhibit the generation of particles during sputtering, and improve the production yield upon forming thin films.
摘要翻译： 含有B并通过熔融流延法获得的磁性溅射靶，其中B含量为10at％以上且50at％以下，余量为选自Co，Fe和Ni中的一种以上的元素 。 基于本发明的方法，得到气体杂质少的溅射靶，没有裂纹和断裂，其主要构成元素的偏析最小。 因此，当用包括直流电源的磁控溅射装置溅射时，该溅射靶产生了能够抑制溅射期间颗粒产生的显着效果，并且在形成薄膜时提高了生产率。
-
公开(公告)号：US20120118734A1
公开(公告)日：2012-05-17
申请号：US13383886
申请日：2010-09-30
申请人： Atsushi Sato , Atsutoshi Arakawa
发明人： Atsushi Sato , Atsutoshi Arakawa
CPC分类号： C22C19/07 , C22C1/0433 , C23C14/3414 , H01F41/183
摘要： A ferromagnetic material sputtering target made of metal having a composition containing 20 mol % or less of Cr, and Co as the remainder thereof, wherein the structure of the target includes a metallic substrate (A), and, in the metallic substrate (A), a spherical phase (B) containing 90 wt % or more of Co in which the difference between the longest diameter and the shortest diameter is 0 to 50%. Provided is a ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetron sputtering device.
摘要翻译： 由具有20mol％以下的Cr，Co作为其余部分的金属制成的铁磁材料溅射靶，其中，所述靶的结构包括金属基板（A），并且在所述金属基板（A）中， ，含有90重量％以上的Co的球状相（B），其中最长直径和最短直径之间的差为0〜50％。 本发明提供能够提高漏电磁通量的磁铁材料溅射靶，从而通过磁控溅射装置获得稳定的放电。
-
26.发明授权公开(公告)号：US08679268B2
公开(公告)日：2014-03-25
申请号：US13320840
申请日：2010-09-30
CPC分类号： C23C14/3414 , B22F2998/00 , C22C19/07 , C22C32/00 , C22C2202/02 , H01F41/183 , C22C32/0026 , B22F9/082
摘要： A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 μm or more and 150 μm or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.
摘要翻译： 一种铁磁溅射靶，其包含具有20摩尔％以下的Cr的组成的金属，余量为Co; 其特征在于，在所述基体金属（A）中，所述基体金属（A）和含有90重量％以上的Co的平坦相（B），所述相（B）的平均粒径为10μm， 多于150μm以下，相（B）的平均纵横比为1:2〜1:10。 本发明提供能够抑制溅射时的粒子产生的铁磁性溅射靶，提高通过磁通以通过磁控溅射装置实现稳定的放电。
-
27.发明申请Method of Producing Mixed Powder Comprising Noble Metal Powder and Oxide Powder, and Mixed Powder Comprising Noble Metal Powder and Oxide Powder 有权包含贵金属粉末和氧化物粉末的混合粉末和包含贵金属粉末和氧化物粉末的混合粉末的方法公开(公告)号：US20110114879A1
公开(公告)日：2011-05-19
申请号：US12993133
申请日：2009-08-18
申请人： Atsutoshi Arakawa , Kazuyuki Satoh , Atsushi Sato
发明人： Atsutoshi Arakawa , Kazuyuki Satoh , Atsushi Sato
IPC分类号： C09K3/00
CPC分类号： B22F9/30 , C22B11/00 , C22C1/10 , C22C5/04 , C22C32/0021
摘要： Provided are a method of producing mixed powder comprising noble metal powder and oxide powder, wherein powder of ammonium chloride salt of noble metal and oxide powder are mixed, the mixed powder is subsequently roasted, and ammonium chloride is desorbed by the roasting process in order to obtain mixed powder comprising noble metal powder and oxide powder, and mixed powder comprising noble metal powder and oxide powder, wherein chlorine is less than 1000 ppm, nitrogen is less than 1000 ppm, 90% or more of the grain size of the noble metal powder is 20 μm or less, and 90% or more of the grain size of the oxide powder is 12 μm or less. Redundant processes in the production of noble metal powder are eliminated, and processes are omitted so that the inclusion of chlorine contained in the royal water and nitrogen responsible for hydrazine reduction reaction is eliminated as much as possible. Consequently, the present invention aims to omit the drying process at a high temperature and thereby prevent grain growth and aggregation, and further eliminate the pulverization and classification processes in order to considerably reduce the production cost.
摘要翻译： 提供一种制备包含贵金属粉末和氧化物粉末的混合粉末的方法，其中混合贵金属和氧化物粉末的氯化铵盐的粉末，随后将该混合粉末进行焙烧，并通过焙烧过程解吸氯化铵，以便 获得包含贵金属粉末和氧化物粉末的混合粉末，以及含有贵金属粉末和氧化物粉末的混合粉末，其中氯小于1000ppm，氮小于1000ppm，贵金属粉末的粒径为90％以上 为20μm以下，氧化物粉末的粒径的90％以上为12μm以下。 消除贵金属粉末生产中的冗余工艺，省略工艺，尽可能地除去包含在负责肼还原反应的皇家水和氮中的氯。 因此，本发明的目的是在高温下省略干燥过程，从而防止晶粒生长和聚集，并且进一步消除粉碎和分级过程，以显着降低生产成本。
-
公开(公告)号：US09269389B2
公开(公告)日：2016-02-23
申请号：US13513387
申请日：2010-10-21
申请人： Atsutoshi Arakawa
发明人： Atsutoshi Arakawa
IPC分类号： C23C14/34 , G11B5/851 , C22C19/03 , C22C19/07 , C22C38/00 , C22C38/08 , C22C38/10 , H01F41/18
CPC分类号： G11B5/851 , C22C19/03 , C22C19/07 , C22C38/002 , C22C38/08 , C22C38/10 , C22C38/105 , C23C14/3414 , H01F41/183
摘要： A magnetic sputtering target which contains B and is obtained by a melting and casting method, wherein the B content is 10 at % or more and 50 at % or less, and the remainder is one or more elements selected from Co, Fe, and Ni. Based on the method of the present invention, the sputtering target, in which gaseous impurities are few, there are no cracks and fractures, and segregation of its main constituent elements is minimal, is obtained. Consequently, when sputtered with a magnetron sputtering device comprising a DC power supply, this sputtering target yields a significant effect of being able to inhibit the generation of particles during sputtering, and improve the production yield upon forming thin films.
摘要翻译： 含有B并通过熔融流延法获得的磁性溅射靶，其中B含量为10at％以上且50at％以下，余量为选自Co，Fe和Ni中的一种以上的元素 。 基于本发明的方法，得到气体杂质少的溅射靶，没有裂纹和断裂，其主要构成元素的偏析最小。 因此，当用包括直流电源的磁控溅射装置溅射时，该溅射靶产生了能够抑制溅射期间颗粒产生的显着效果，并且在形成薄膜时提高了生产率。
-
公开(公告)号：US09228251B2
公开(公告)日：2016-01-05
申请号：US13383886
申请日：2010-09-30
申请人： Atsushi Sato , Atsutoshi Arakawa
发明人： Atsushi Sato , Atsutoshi Arakawa
CPC分类号： C22C19/07 , C22C1/0433 , C23C14/3414 , H01F41/183
摘要： A ferromagnetic material sputtering target made of metal having a composition containing 20 mol % or less of Cr, and Co as the remainder thereof, wherein the structure of the target includes a metallic substrate (A), and, in the metallic substrate (A), a spherical phase (B) containing 90 wt % or more of Co in which the difference between the longest diameter and the shortest diameter is 0 to 50%. Provided is a ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetron sputtering device.
摘要翻译： 由具有20mol％以下的Cr，Co作为其余部分的金属制成的铁磁材料溅射靶，其中，所述靶的结构包括金属基板（A），并且在所述金属基板（A）中， ，含有90重量％以上的Co的球状相（B），其中最长直径和最短直径之间的差为0〜50％。 本发明提供能够提高漏电磁通量的磁铁材料溅射靶，从而通过磁控溅射装置获得稳定的放电。
-
30.发明授权Method of producing mixed powder comprising noble metal powder and oxide powder, and mixed powder comprising noble metal powder and oxide powder 有权包含贵金属粉末和氧化物粉末的混合粉末的制造方法以及包含贵金属粉末和氧化物粉末的混合粉末公开(公告)号：US08758476B2
公开(公告)日：2014-06-24
申请号：US12993133
申请日：2009-08-18
申请人： Atsutoshi Arakawa , Kazuyuki Satoh , Atsushi Sato
发明人： Atsutoshi Arakawa , Kazuyuki Satoh , Atsushi Sato
CPC分类号： B22F9/30 , C22B11/00 , C22C1/10 , C22C5/04 , C22C32/0021
摘要： Provided are a method of producing mixed powder comprising noble metal powder and oxide powder, wherein powder of ammonium chloride salt of noble metal and oxide powder are mixed, the mixed powder is subsequently roasted, and ammonium chloride is desorbed by the roasting process in order to obtain mixed powder comprising noble metal powder and oxide powder, and mixed powder comprising noble metal powder and oxide powder, wherein chlorine is less than 1000 ppm, nitrogen is less than 1000 ppm, 90% or more of the grain size of the noble metal powder is 20 μm or less, and 90% or more of the grain size of the oxide powder is 12 μm or less. Redundant processes in the production of noble metal powder are eliminated, and processes are omitted so that the inclusion of chlorine contained in the royal water and nitrogen responsible for hydrazine reduction reaction is eliminated as much as possible. Consequently, the present invention aims to omit the drying process at a high temperature and thereby prevent grain growth and aggregation, and further eliminate the pulverization and classification processes in order to considerably reduce the production cost.
摘要翻译： 提供一种制备包含贵金属粉末和氧化物粉末的混合粉末的方法，其中混合贵金属和氧化物粉末的氯化铵盐的粉末，随后将该混合粉末进行焙烧，并通过焙烧过程解吸氯化铵，以便 获得包含贵金属粉末和氧化物粉末的混合粉末，以及含有贵金属粉末和氧化物粉末的混合粉末，其中氯小于1000ppm，氮小于1000ppm，贵金属粉末的粒径为90％以上 为20μm以下，氧化物粉末的粒径的90％以上为12μm以下。 消除贵金属粉末生产中的冗余工艺，省略工艺，尽可能地除去包含在负责肼还原反应的皇家水和氮中的氯。 因此，本发明的目的是在高温下省略干燥过程，从而防止晶粒生长和聚集，并且进一步消除粉碎和分级过程，以显着降低生产成本。
-
-
-
-
-
-
-
-
-
搜索结果
33 条记录 (耗时 0.018 秒)
