公开(公告)号：US5953595A

公开(公告)日：1999-09-14

申请号：US721948

申请日：1996-09-27

申请人： Dharam Pal Gosain ,  Jonathan Westwater ,  Miyako Nakagoe ,  Setsuo Usui

发明人： Dharam Pal Gosain ,  Jonathan Westwater ,  Miyako Nakagoe ,  Setsuo Usui

IPC分类号： G03F7/42 ,  H01L21/027 ,  H01L21/306 ,  H01L21/336 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L29/66765 ,  G03F7/42 ,  H01L21/02046 ,  H01L21/0272 ,  H01L29/78621 ,  Y10S438/949

摘要： The manufacturing processes can be simplified and the reliability can be improved. A method of processing a thin film includes a first process of selectively forming a resist pattern on a ground surface, a second process of forming a thin film on the ground surface and a surface of the resist pattern, and a third process of removing the resist pattern to selectively remove the thin film deposited on the former, i.e., carrying out the lift-off, thereby the thin film process for a desired pattern being carried out.

摘要翻译： 可以简化制造工序，提高可靠性。 一种处理薄膜的方法包括在地表面上选择性地形成抗蚀剂图案的第一工艺，在地表面上形成薄膜的第二工艺和抗蚀剂图案的表面，以及除去抗蚀剂的第三工艺 以选择性地去除沉积在前者上的薄膜，即进行剥离，从而进行所需图案的薄膜处理。

公开(公告)号：US5858862A

公开(公告)日：1999-01-12

申请号：US822758

申请日：1997-03-24

申请人： Jonathan Westwater ,  Dharam Pal Gosain ,  Miyako Nakagoe ,  Setsuo Usui

发明人： Jonathan Westwater ,  Dharam Pal Gosain ,  Miyako Nakagoe ,  Setsuo Usui

IPC分类号： C30B11/00 ,  C30B11/12 ,  H01L21/205 ,  H01L33/06 ,  H01L33/16 ,  H01L33/34 ,  H01S5/00 ,  C30B23/00

CPC分类号： C30B11/12 ,  C30B11/00 ,  C30B29/605

摘要： A process of producing quantum fine wires, it is called silicon nanowires, too, which allows silicon quantum fine wires to grow into desirable shapes. In this process, gold is deposited on a silicon substrate to a thickness of 5 nm or less, and the silicon substrate is heated at a temperature of 450.degree. C. to 650.degree. C. in an atmosphere containing silane gas at a pressure less than 0.5 Torr, whereby drops of a molten alloy of silicon and gold are formed on the surface of the silicon substrate and the silane gas is decomposed by the action of the molten alloy drops as catalyst, to allow silicon quantum fine wires to grow into such desirable shapes as to be uniform in diameter without any bending.

摘要翻译： 制造量子细线的过程也称为硅纳米线，这允许硅量子细线生长成期望的形状。 在该方法中，将金沉积在硅衬底上至5nm或更小的厚度，并将硅衬底在含有硅烷气体的气氛中在450℃至650℃的温度下加压至低于 0.5托，由此在硅基板的表面上形成硅和金的熔融合金的液滴，并且通过熔融合金液滴的作用将硅烷气分解为催化剂，以使硅量子细线生长成所需的 形状在直径上是均匀的而没有任何弯曲。

公开(公告)号：US5437734A

公开(公告)日：1995-08-01

申请号：US193467

申请日：1994-02-08

申请人： Takeshi Matsushita ,  Dharam P. Gosain ,  Jonathan Westwater ,  Setsuo Usui ,  Kunio Hane

发明人： Takeshi Matsushita ,  Dharam P. Gosain ,  Jonathan Westwater ,  Setsuo Usui ,  Kunio Hane

IPC分类号： H01L31/068 ,  H01L31/0687 ,  H01L31/18 ,  H01L31/06 ,  H01L31/078

CPC分类号： H01L31/0687 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： Disclosed herein is a solar cell which is composed basically of a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a third semiconductor layer formed between them. The third semiconductor layer has a band gap narrower than that of the first and second semiconductor layers. The third semiconductor layer also has a pn junction therein. The semiconductor layers are each separated by a buffer layer in which the composition changes gradually across the thickness so that the lattice mismatch between the semiconductor layers is relieved.

摘要翻译： 这里公开了一种太阳能电池，其基本上由第一导电类型的第一半导体层，第二导电类型的第二半导体层和在它们之间形成的第三半导体层组成。 第三半导体层具有比第一和第二半导体层窄的带隙。 第三半导体层也具有pn结。 半导体层各自被缓冲层隔开，其中组合物在整个厚度上逐渐变化，使得半导体层之间的晶格失配缓解。

公开(公告)号：US06953754B2

公开(公告)日：2005-10-11

申请号：US10478888

申请日：2002-06-04

申请人： Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

发明人： Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

IPC分类号： B32B7/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/822 ,  H01L27/04 ,  H01L29/786 ,  H01L31/04 ,  H01L21/31

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78678

摘要： The invention provides a functional device having no cracks and capable of delivering good functional characteristics and a method of manufacturing the same. A functional layer (14) is formed by crystallizing an amorphous silicon layer as a precursor layer by laser beam irradiation. A laser beam irradiation conducts heat up to a substrate (11) to cause it to try to expand; a stress to be produced by the difference in thermal expansion coefficient between the substrate (11) and the functional layer (14) is shut off by an organic polymer layer (12) lower in thermal expansion coefficient than the substrate (11), thereby causing no cracks nor separations in the functional layer (14). The organic polymer layer (12) is preferably made of an acrylic resin, an epoxy resin, or a polymer material containing these that is deformed by an optical or thermal process to undergo a three-dimensional condensation polymerization, for higher compactness and hardness. Inserting a metal layer and an inorganic heat resistant layer between the substrate (11) and the functional layer (14) will permit a more powerful laser irradiation.

摘要翻译： 本发明提供了一种没有裂纹并且能够提供良好的功能特性的功能装置及其制造方法。 通过激光束照射使非晶硅层作为前体层结晶而形成功能层（14）。 激光束照射将热量传导到衬底（11）以使其试图膨胀; 由基板（11）和功能层（14）之间的热膨胀系数的差异产生的应力由热膨胀系数低于基板（11）的有机聚合物层（12）切断，从而导致 在功能层（14）中没有裂纹或分离。 有机聚合物层（12）优选由丙烯酸树脂，环氧树脂或包含它们的聚合物材料制成，这些材料通过光学或热过程变形以进行三维缩聚，以获得更高的紧凑性和硬度。 在基板（11）和功能层（14）之间插入金属层和无机耐热层将允许更强大的激光照射。

公开(公告)号：US20050092358A1

公开(公告)日：2005-05-05

申请号：US10999049

申请日：2004-11-29

申请人： Akio Machida ,  Setsuo Usui ,  Kazumasa Nomoto

发明人： Akio Machida ,  Setsuo Usui ,  Kazumasa Nomoto

IPC分类号： H01L31/00 ,  H01L31/0368

CPC分类号： H01L31/03682 ,  Y02E10/546

摘要： An optical energy conversion apparatus 10 includes a first impurity doped semiconductor layer 5, formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer 6, formed on the first impurity doped semiconductor layer 5, and which is of a hydrogen-containing amorphous semiconductor material, and a second impurity doped semiconductor layer 7, admixed with a second impurity and formed on the optically active semiconductor layer 6. The second impurity doped semiconductor layer is of a polycrystallized semiconductor material lower in hydrogen concentration than the material of the optically active semiconductor layer 6. The average crystal grain size in the depth-wise direction in an interfacing structure between the optically active semiconductor layer 6 and the second impurity doped semiconductor layer 7 is decreased stepwise in a direction proceeding from the surface of the second impurity doped semiconductor layer towards the substrate 1. By controlling the hydrogen concentration of the second impurity doped semiconductor layer 7, the number of dangling bonds in the second impurity doped semiconductor layer 7 is significantly decreased to exhibit superior crystallinity to improve the conversion efficiency of the apparatus 10.

摘要翻译： 光能转换装置10包括形成在基板上的第一杂质掺杂半导体层5，其是与第一杂质混合的半导体材料，形成在第一杂质掺杂半导体层5上的光学活性层6，以及 其是含氢非晶半导体材料，和第二杂质掺杂半导体层7，与第二杂质混合并形成在光学活性半导体层6上。 第二杂质掺杂半导体层是多晶半导体材料，其氢浓度低于光学活性半导体层6的材料。 在光学活性半导体层6和第二杂质掺杂半导体层7之间的界面结构中的深度方向上的平均晶粒尺寸在从第二杂质掺杂半导体层的表面朝向衬底的方向上逐步降低 1。 通过控制第二杂质掺杂半导体层7的氢浓度，第二杂质掺杂半导体层7中的悬挂键数量显着降低，以显示出优异的结晶度，从而提高了装置10的转换效率。

公开(公告)号：US06794277B2

公开(公告)日：2004-09-21

申请号：US10204167

申请日：2002-10-23

申请人： Akio Machida ,  Setsuo Usui ,  Dharam Pal Gosain

发明人： Akio Machida ,  Setsuo Usui ,  Dharam Pal Gosain

IPC分类号： H01L2126

CPC分类号： H01L29/66757 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/268 ,  H01L29/78621 ,  Y10S438/914 ,  Y10S438/923

摘要： A lower concentration impurity diffusion region can be formed under excellent control, even when a low heat-resistant substrate is used. At the time of doping a semiconductor layer, a mask such as sidewalls (24) where an energy beam passes through, is formed on a part of a surface of a semiconductor layer (21), dopant ions (25) are adsorbed on the surface of the semiconductor layer (21) except a region in which the mask is formed, and an energy beam EBL is irradiated onto the semiconductor layer (21) having the formed mask to introduce the dopant ions into the semiconductor layer (21). In the lower part of the mask such sidewalls (24), diffusion in transverse direction occurs and lower concentration impurity diffusion regions can be formed in excellent reproducibility under excellent control.

摘要翻译： 即使使用低耐热性基板，也可以在优异的控制下形成浓度较低的杂质扩散区域。 在掺杂半导体层时，在半导体层（21）的表面的一部分上形成诸如能量束通过的侧壁（24）的掩模，掺杂离子（25）被吸附在表面 除了形成有掩模的区域之外的半导体层（21）和能量束EBL被照射到具有形成的掩模的半导体层（21）上以将掺杂剂离子引入到半导体层（21）中。 在掩模的下部，这样的侧壁（24）发生横向扩散，并且在优异的控制下可以以优异的再现性形成较低浓度的杂质扩散区域。

公开(公告)号：US06410412B1

公开(公告)日：2002-06-25

申请号：US09663006

申请日：2000-09-15

申请人： Kenichi Taira ,  Noriyuki Kawashima ,  Takashi Noguchi ,  Dharam Pal Gosain ,  Setsuo Usui

发明人： Kenichi Taira ,  Noriyuki Kawashima ,  Takashi Noguchi ,  Dharam Pal Gosain ,  Setsuo Usui

IPC分类号： H01L214763

CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/66757 ,  H01L29/7881 ,  Y10S438/927

摘要： Methods for fabricating memory devices having a multi-dot floating gate ensuring a desirable crystallization of a semiconductor film without ruining the flatness of the surface of the polycrystallized silicon layer and a tunnel oxide film, allowing desirable semiconductor dots to be produced, and allowing production of the memory devices having a multi-dot floating gate with ease and at low costs even when a substrate is made of glass or plastic. Such a method for fabricating memory devices includes steps for forming on a substrate a semiconductor film and treating said semiconductor film by a first laser annealing so as to have a polycrystalline structure; forming on the semiconductor film a semiconductor dot forming film having a non-stoichiometric composition with an excessive content of a semiconductor element; and dispersing semiconductor dots within the semiconductor dot forming film by a second laser annealing thereby to produce semiconductor dots; in which a pulse energy density of the laser used for the first laser annealing is larger than a pulse energy density of the laser used for the second laser annealing.

摘要翻译： 用于制造具有多点浮置栅极的存储器件的方法，其确保半导体膜的期望结晶，而不破坏多晶硅层的表面的平坦度和隧道氧化物膜，从而允许产生期望的半导体点，并且允许 存储器件具有多点浮置栅极，即使当衬底由玻璃或塑料制成时，其容易且成本低廉。 这种用于制造存储器件的方法包括以下步骤：在衬底上形成半导体膜并通过第一激光退火处理所述半导体膜以具有多晶结构; 在半导体膜上形成具有半导体元件含量过多的非化学计量组成的半导体点形成膜; 并通过第二激光退火将半导体点分散在半导体点形成膜内，从而产生半导体点; 其中用于第一激光退火的激光器的脉冲能量密度大于用于第二激光退火的激光器的脉冲能量密度。

公开(公告)号：US06716664B2

公开(公告)日：2004-04-06

申请号：US10391811

申请日：2003-03-20

申请人： Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

发明人： Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

IPC分类号： H01L5140

CPC分类号： H01L29/78603 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

摘要： A functional device free from cracking and having excellent functional characteristics, and a method of manufacturing the same are disclosed. A low-temperature softening layer (12) and a heat-resistant layer (13) are formed in this order on a substrate (11) made of an organic material such as polyethylene terephthalate, and a functional layer (14) made of polysilicon is formed thereon. The functional layer (14) is formed by crystallizing an amorphous silicon layer, which is a precursor layer, with laser beam irradiation. When a laser beam is applied, heat is transmitted to the substrate (11) and the substrate (11) tends to expand. However, a stress caused by a difference in a thermal expansion coefficient between the substrate (11) and the functional layer (14) is absorbed by the low-temperature softening layer (12), so that no cracks and peeling occurs in the functional layer (14). The low-temperature softening layer (12) is preferably made of a polymeric material containing an acrylic resin. By properly interposing a metal layer and a heat-resistant layer between the substrate (11) and the functional layer (14), a laser beam of higher intensity can be irradiated.

摘要翻译： 公开了一种没有破裂和功能特性优异的功能元件及其制造方法。 在由诸如聚对苯二甲酸乙二醇酯的有机材料制成的基板（11）上依次形成低温软化层（12）和耐热层（13），并且由多晶硅制成的功能层（14） 形成在其上。 通过用激光束照射使作为前体层的非晶硅层结晶来形成功能层（14）。 当施加激光束时，热量传递到基板（11），并且基板（11）趋于膨胀。 然而，由基板（11）和功能层（14）之间的热膨胀系数的差异引起的应力被低温软化层（12）吸收，从而在功能层中不会发生裂纹和剥离 （14）。 低温软化层（12）优选由含有丙烯酸树脂的聚合材料制成。 通过在基板（11）和功能层（14）之间适当地插入金属层和耐热层，可以照射更高强度的激光束。

公开(公告)号：US06548830B1

公开(公告)日：2003-04-15

申请号：US09616685

申请日：2000-07-14

申请人： Takashi Noguchi ,  Yasuhiro Kanaya ,  Masafumi Kunii ,  Yuji Ikeda ,  Setsuo Usui

发明人： Takashi Noguchi ,  Yasuhiro Kanaya ,  Masafumi Kunii ,  Yuji Ikeda ,  Setsuo Usui

IPC分类号： H01L2976

CPC分类号： H01L21/02686 ,  B82Y10/00 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02609 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/28273 ,  H01L29/66765 ,  H01L29/78678 ,  Y10T428/24372

摘要： A semiconductor device comprising a source/drain region and a channel region formed in a silicon thin film composed of a group of silicon single crystal grains which are each approximately rectangular-shaped and which are arranged in a grid pattern on the base body, where a selected orientation of the silicon single crystal grains to the surface of the base body is approximately the direction.

摘要翻译： 一种半导体器件，包括源极/漏极区域和形成在由硅单晶颗粒组成的硅薄膜中的沟槽区域，所述硅单晶晶体每个近似矩形并且以基板上的网格图案布置，其中 硅单晶晶粒的基体的表面的选择取向大致为<100>方向。

公开(公告)号：US5409857A

公开(公告)日：1995-04-25

申请号：US403934

申请日：1989-09-07

申请人： Seiichi Watanabe ,  Setsuo Usui

发明人： Seiichi Watanabe ,  Setsuo Usui

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L29/66765 ,  Y10S148/09 ,  Y10S148/164

摘要： An integrated circuit is formed thereof a conductive wiring pattern. On the conductive wiring semiconductor layer is directly formed in a form of amorphous on the substrate. The amorphous semiconductor layer is annealed to form a polycrystalline structure while avoiding influence of annealing heat for the substrate. In the polycrystalline semiconductor layer is formed a semiconductor element, such as MOS transistor, MIS transistor, TFT and so forth. The semiconductor element is directly connected to the wiring pattern on the substrate.

摘要翻译： 集成电路由导电布线图形形成。 导电布线半导体层直接在基板上形成非晶态。 将非晶半导体层进行退火以形成多晶结构，同时避免对基板的退火热的影响。 在多晶半导体层中形成诸如MOS晶体管，MIS晶体管，TFT等的半导体元件。 半导体元件直接连接到基板上的布线图案。