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公开(公告)号：US20060145625A1
公开(公告)日：2006-07-06
申请号：US10536704
申请日：2004-09-06
CPC分类号： H01J61/827 , H01J61/302
摘要： A metal halide lamp has an arc tube that includes: a pair of electrode structures, each of which has an electrode at a tip; a main tube part made of polycrystalline alumina ceramic, and containing a discharge space in which the electrodes of the electrode structures are located to oppose each other; and a pair of thin tube parts that connect from the main tube part and are sealed by respective sealing members with the electrode structures inserted therein, where 20≦WL≦50, EL/Di≧2.0, and 0.5≦G≦5.0 are satisfied where tube wall loading of the arc tube is WL(W/cm2), a distance between the electrodes is EL(mm), an inner diameter of the main tube part is Di (mm), and a crystal grain diameter of the polycrystalline alumina ceramic is G(μm)
摘要翻译： 金属卤化物灯具有电弧管，其包括：一对电极结构，每个电极结构具有尖端的电极; 由多晶氧化铝陶瓷制成的主管部分，并且包含其中电极结构的电极彼此相对的放电空间; 以及一对细管部分，其从主管部分连接并且由插入其中的电极结构的相应的密封构件密封，其中20 <= WL <= 50，EL / Di> = 2.0和0.5 <= G < = 5.0，其中电弧管的管壁负载为WL（W / cm 2），电极之间的距离为EL（mm），主管部分的内径为Di mm），多晶氧化铝陶瓷的晶粒直径为G（mum）
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公开(公告)号：US07057350B2
公开(公告)日：2006-06-06
申请号：US10839804
申请日：2004-05-05
IPC分类号： H01J17/20
CPC分类号： H01J61/827 , H01J61/125 , H01J61/302
摘要： An arc discharge metal halide lamp having a discharge chamber having visible light permeable walls bounding a discharge region supported electrodes in a discharge region spaced apart by a distance Le with an average interior diameter equal to D so they have a selected ratio with D exceeding a minimum value. Ionizable materials are provided in this chamber involving a noble gas, one or more halides, and mercury in an amount sufficiently small so as to result in a relatively low maximum voltage drop between the electrodes during lamp operation for a lamp dissipation sufficient to have the chamber wall loading exceed a minimum value or so as to maintain chamber luminosity above a minimum value for a selected operational duration.
摘要翻译： 一种电弧放电金属卤化物灯，其具有放电室，该放电室具有将平均内径等于D的间隔开距离为L的放电区域中的放电区域支撑的电极限定在其上， D的选择比例超过最小值。 在该室中设置可离子化材料，该惰性气体包含惰性气体，一种或多种卤化物和足够小量的汞，以便在灯操作期间导致电极之间相对较低的最大电压降，足以具有室 壁载荷超过最小值，以便在所选择的操作持续时间内将室内亮度保持在最小值以上。
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公开(公告)号：US6005805A
公开(公告)日：1999-12-21
申请号：US731555
申请日：1996-10-16
申请人： Nobuyoshi Takeuchi
发明人： Nobuyoshi Takeuchi
CPC分类号： G11C16/3445 , G11C16/3436 , G11C16/3459
摘要： In a nonvolatile semiconductor memory device, flash memory cells are arranged in rows and columns and the individual memory cells 2nk are connected to word lines WLi and bit lines BLi. Further connected to the individual word lines WLi are verify cells 4n that are verified in place of the memory cells 2nk during the verification of the memory cells 2nk. The memory cells 2nk and verify cells 4n are formed into almost the same EEPROM structure having a floating electrode, except that the gate couple ratio of the verify cells 4n are set smaller than that of the gate couple ratio of the memory cells 2nk. Therefore, as long as electrons are injected sufficiently into these two types of cells, the threshold values of the verify cells 4n are always smaller than those of the memory cells 2nk. Consequently, when it is confirmed that the verify cells 4n have been verified, this means that the memory cells have been verified as well.
摘要翻译： 在非易失性半导体存储器件中，闪存单元以行和列排列，并且各个存储单元2nk连接到字线WLi和位线BLi。 在存储单元2nk的验证期间，进一步连接到各个字线WLi是验证代替存储器单元2nk的单元4n。 存储单元2nk和验证单元4n形成为具有浮置电极的几乎相同的EEPROM结构，除了验证单元4n的栅极耦合比被设置为小于存储单元2nk的栅极耦合比的栅极耦合比。 因此，只要将电子充分地注入到这两种类型的单元中，则验证单元4n的阈值总是小于存储单元2nk的阈值。 因此，当确认验证单元4n已经被验证时，这意味着也已经验证了存储单元。
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公开(公告)号：US5717400A
公开(公告)日：1998-02-10
申请号：US400185
申请日：1995-02-24
CPC分类号： H03B9/141 , G01S7/032 , G01S13/34 , G01S7/35 , H03B2009/126
摘要： A radar module includes a high-frequency signal generator comprising upper and lower parallel conductive plates, at least one dielectric rod held between the parallel conductive plates, a metal diode mount held between the parallel conductive plates, a gunn diode member mounted on a side of the diode mount, and a printed-circuit board mounted on the side of the diode mount in covering relationship to the gunn diode member and having a bias supply circuit on its surface for supplying a bias voltage to the gunn diode member. One terminal of the gunn diode member extends through a through hole defined in the printed-circuit board, is exposed in the vicinity of the surface of the diode mount, and is connected to the bias supply circuit. The printed-circuit board has a rectangular metal pattern dimensionally adjustable for adjusting the oscillation frequency of the gunn diode member, and a varactor diode for modulating the frequency of a signal generated by the gunn diode member so that the high-frequency signal generator can function as an FM signal generator.
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25.发明授权Method of forming diffusion layer and method of manufacturing nonvolatile semiconductor memory device 失效形成扩散层的方法和制造非易失性半导体存储器件的方法
公开(公告)号：US5641696A
公开(公告)日：1997-06-24
申请号：US519812
申请日：1995-08-25
申请人： Nobuyoshi Takeuchi
发明人： Nobuyoshi Takeuchi
IPC分类号： H01L21/8247
CPC分类号： H01L27/11521
摘要： The first impurity species having a low diffusion rate is heavily doped in a predetermined region of a semiconductor substrate in contact with portions corresponding to the edges of a floating gate, and the second impurity species having a low diffusion rate is lightly doped in the predetermined region from a position separated from the portions corresponding to the edges of the floating gate by a predetermined distance. Annealing is performed such that the second impurity species is diffused below the floating gate more inward than the first impurity species, and part of a diffusion region formed by the first impurity species serves as a tunnel region which overlaps the floating gate. With this structure, a short channel effect can be prevented, and an inter-band current can be suppressed.
摘要翻译： 具有低扩散速率的第一杂质物质在半导体衬底的与浮栅的边缘相对应的部分的预定区域中被重掺杂，并且具有低扩散速率的第二杂质物质在预定区域中被轻掺杂 从与浮动栅极的边缘相对应的部分分离预定距离的位置。 执行退火，使得第二杂质种类比第一杂质物质更向内扩散到浮置栅极之下，并且由第一杂质物质形成的扩散区域的一部分用作与浮置栅极重叠的隧道区域。 利用这种结构，可以防止短通道效应，并且可以抑制带间电流。
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公开(公告)号：US5223301A
公开(公告)日：1993-06-29
申请号：US850101
申请日：1992-03-12
IPC分类号： A23L17/00
CPC分类号： A23L17/70
摘要： There is disclosed an improved surimi manufacturing process employing a mince crushing step that increases mince surface area to volume ratios. The effect of increasing surface area to volume ratios of mince particles, depending upon when in the surimi manufacturing process it is used, will improve overall yield of surimi and surimi by-products and/or reduce the requirement for fresh water for the surimi manufacturing process.
摘要翻译： 公开了一种改进的鱼糜制造方法，该方法采用剁碎的破碎步骤，其增加最小表面积与体积比。 根据使用的鱼糜制造工艺中的时间，提高剁碎颗粒的表面积与体积比的效果将提高鱼糜和鱼糜副产物的总产量和/或减少鱼糜制造过程中对淡水的需求 。
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公开(公告)号：USD529876S1
公开(公告)日：2006-10-10
申请号：US29226631
申请日：2005-03-30
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公开(公告)号：USD529875S1
公开(公告)日：2006-10-10
申请号：US29226629
申请日：2005-03-30
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公开(公告)号：USD527351S1
公开(公告)日：2006-08-29
申请号：US29226591
申请日：2005-03-30
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公开(公告)号：US20050006221A1
公开(公告)日：2005-01-13
申请号：US10482750
申请日：2002-06-10
IPC分类号： H01L31/032 , C23C14/00 , C23C14/32
CPC分类号： C23C14/3464 , C23C14/0623 , H01L31/0322 , Y02E10/541
摘要： A method of forming a light-absorbing layer of CIGS by first forming a thin-film precursor of Ib-IIIb group metals by sputtering and then treating by heat the precursor in a selenium atmosphere, wherein particles sputtered from an alloy target of Ib group-IIIb group metals and a single metal target of Ib group or IIIb group metal, disposed opposite to each other, are well mixed to form a thin single-layered precursor being free from the occurrence of reaction of metals at a boundary of layers.
摘要翻译： 首先通过溅射形成Ib-IIIb族金属的薄膜前体，然后在硒气氛中通过加热处理前体，形成CIGS的光吸收层的方法，其中从Ib组合金属的合金靶溅射的颗粒， IIIb族金属和彼此相对设置的Ib族或IIIb族金属的单一金属靶被充分混合以形成在层边界处不发生金属反应的薄单层前体。
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