公开(公告)号：US20130122691A1

公开(公告)日：2013-05-16

申请号：US13707613

申请日：2012-12-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-I Liao ,  Ching-I Li ,  Shu-Yen Chan

IPC: H01L21/20

CPC classification number: H01L21/20 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

Abstract: A method for forming a semiconductor structure is provided. First, multiple recesses are formed in a substrate. Second, a precursor mixture is provided to form a non-doped epitaxial layer on the inner surface of the recesses. The precursor mixture includes a silicon precursor, an epitaxial material precursor and a hydrogen-halogen compound. The flow rate ratio of the silicon precursor to the epitaxial material precursor is greater than 1.7. Later, a doped epitaxial layer including Si, the epitaxial material and the dopant is formed and substantially fills up the recess.

Abstract translation: 提供一种形成半导体结构的方法。 首先，在基板上形成多个凹部。 第二，提供前体混合物以在凹槽的内表面上形成非掺杂外延层。 前体混合物包括硅前体，外延材料前体和氢卤素化合物。 硅前体与外延材料前体的流速比大于1.7。 之后，形成包括Si，外延材料和掺杂剂的掺杂外延层，并基本上填充凹槽。

公开(公告)号：US09006805B2

公开(公告)日：2015-04-14

申请号：US13960816

申请日：2013-08-07

Applicant: United Microelectronics Corp.

Inventor： Chin-I Liao ,  Chun-Yu Chen

IPC: H01L29/41 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/267 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device includes at least two fin-shaped structures, a gate structure, at least two epitaxial structures and a silicon cap. The fin-shaped structures are disposed on a substrate and are covered by the gate structure. The epitaxial structures are disposed at one side of the gate structure and respectively directly contact each fin-shaped structure, wherein the epitaxial structures are spaced apart from each other. The silicon cap simultaneously surrounds the epitaxial structures.

Abstract translation: 半导体器件包括至少两个鳍状结构，栅极结构，至少两个外延结构和硅帽。 鳍状结构设置在基板上并被栅极结构覆盖。 外延结构设置在栅极结构的一侧并且分别直接接触每个鳍状结构，其中外延结构彼此间隔开。 硅帽同时围绕外延结构。

公开(公告)号：US20150041855A1

公开(公告)日：2015-02-12

申请号：US13960816

申请日：2013-08-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-I Liao ,  Chun-Yu Chen

IPC: H01L29/417 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/267 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device includes at least two fin-shaped structures, a gate structure, at least two epitaxial structures and a silicon cap. The fin-shaped structures are disposed on a substrate and are covered by the gate structure. The epitaxial structures are disposed at one side of the gate structure and respectively directly contact each fin-shaped structure, wherein the epitaxial structures are spaced apart from each other. The silicon cap simultaneously surrounds the epitaxial structures.

Abstract translation: 半导体器件包括至少两个鳍状结构，栅极结构，至少两个外延结构和硅帽。 鳍状结构设置在基板上并被栅极结构覆盖。 外延结构设置在栅极结构的一侧并且分别直接接触每个鳍状结构，其中外延结构彼此间隔开。 硅帽同时围绕外延结构。

公开(公告)号：US20140335674A1

公开(公告)日：2014-11-13

申请号：US13892424

申请日：2013-05-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-I Liao ,  Chin-Cheng Chien

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66636 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66795

Abstract: A manufacturing method of a semiconductor device is provided. The method includes at least the following steps. A gate structure is formed on a substrate. An epitaxial structure is formed on the substrate, wherein the epitaxial structure comprises SiGe, and the Ge concentration in the epitaxial structure is equal to or higher than 45%. A first cap layer is formed on the epitaxial structure, wherein the first cap layer comprises Si. The first cap layer is doped with boron for forming a flat top surface of the first cap layer.

Abstract translation: 提供一种半导体器件的制造方法。 该方法至少包括以下步骤。 在基板上形成栅极结构。 在衬底上形成外延结构，其中外延结构包括SiGe，外延结构中的Ge浓度等于或高于45％。 第一盖层形成在外延结构上，其中第一盖层包括Si。 第一盖层掺杂有硼以形成第一盖层的平坦顶表面。

公开(公告)号：US20140124904A1

公开(公告)日：2014-05-08

申请号：US13670476

申请日：2012-11-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-I Liao ,  Chin-Cheng Chien

IPC: H01L29/38 ,  H01L21/20

CPC classification number: H01L21/0262 ,  H01L21/0237 ,  H01L21/02576 ,  H01L21/02639 ,  H01L29/0843 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/78

Abstract: A method of forming an epitaxial layer includes the following steps. At first, a first epitaxial growth process is performed to form a first epitaxial layer on a substrate, and a gas source of silicon, a gas source of carbon, a gas source of phosphorous and a gas source of germanium are introduced during the first epitaxial growth process to form the first epitaxial layer including silicon, carbon, phosphorous and germanium. Subsequently, a second epitaxial growth process is performed to form a second epitaxial layer, and a number of elements in the second epitaxial layer is smaller than a number of elements in the first epitaxial layer.

Abstract translation: 形成外延层的方法包括以下步骤。 首先，执行第一外延生长工艺以在衬底上形成第一外延层，并且在第一外延期间引入硅气体源，碳气体源，磷气体源和锗气体源 生长工艺以形成包括硅，碳，磷和锗的第一外延层。 随后，进行第二外延生长工艺以形成第二外延层，并且第二外延层中的多个元件小于第一外延层中的元件的数量。

公开(公告)号：US20140124835A1

公开(公告)日：2014-05-08

申请号：US14156442

申请日：2014-01-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-I Liao ,  Chin-Cheng Chien

IPC: H01L29/78

CPC classification number: H01L29/7848 ,  H01L21/26506 ,  H01L21/28518 ,  H01L21/28525 ,  H01L29/66628 ,  H01L29/66636

Abstract: A semiconductor structure includes agate structure, an epitaxial layer and a carbon-containing silicon germanium cap layer. The gate structure is located on a substrate. The epitaxial layer is located in the substrate beside the gate structure. The carbon-containing silicon germanium cap layer is located on the epitaxial layer. Otherwise, semiconductor processes for forming said semiconductor structure are also provided.

Abstract translation: 半导体结构包括玛瑙结构，外延层和含碳硅锗覆盖层。 栅极结构位于衬底上。 外延层位于栅极结构旁边的衬底中。 含碳硅锗覆盖层位于外延层上。 否则，还提供了用于形成所述半导体结构的半导体工艺。