公开(公告)号：US07679140B2

公开(公告)日：2010-03-16

申请号：US12003040

申请日：2007-12-19

申请人： Young-soo Park ,  Wenxu Xianyu ,  Takashi Noguchi

发明人： Young-soo Park ,  Wenxu Xianyu ,  Takashi Noguchi

IPC分类号： H01L27/01

CPC分类号： H01L21/76259 ,  H01L21/32134 ,  H01L21/76256 ,  H01L27/1266 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78687 ,  H01L2924/0002 ,  Y10S438/933 ,  H01L2924/00

摘要： Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating substrate, and a strained silicon layer formed on the SiO2 layer.

摘要翻译： 提供了一种应变SOI结构和制造应变SOI结构的方法。 应变SOI结构包括绝缘衬底，形成在绝缘衬底上的SiO 2层和形成在SiO 2层上的应变硅层。

公开(公告)号：US20050139882A1

公开(公告)日：2005-06-30

申请号：US11024469

申请日：2004-12-30

申请人： Wenxu Xianyu ,  Takashi Noguchi ,  In-kyeong Yoo ,  Young-soo Park

发明人： Wenxu Xianyu ,  Takashi Noguchi ,  In-kyeong Yoo ,  Young-soo Park

IPC分类号： H01L21/3205 ,  G11C11/22 ,  H01L21/82 ,  H01L21/8239 ,  H01L21/8246 ,  H01L21/84 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/12 ,  H01L29/786 ,  H01L31/119

CPC分类号： H01L27/11507 ,  H01L21/84 ,  H01L27/11502 ,  H01L27/12

摘要： In an electronic device, and a method of manufacturing the same, the electronic device includes a first substrate, a first lower capacitor on the first substrate, a first lower switching element on the first lower capacitor, and a second substrate on the first lower switching element. The electronic device may further include a second lower switching element which is isolated from the first lower capacitor, and an upper capacitor on the second substrate, the lower electrode of the upper capacitor being connected to the second lower switching element.

摘要翻译： 在电子设备及其制造方法中，电子设备包括第一基板，第一基板上的第一下部电容器，第一下部电容器上的第一下部开关元件，以及第一下部开关 元件。 电子设备还可以包括与第一下电容器隔离的第二下开关元件和第二基板上的上电容器，上电容器的下电极连接到第二下开关元件。

公开(公告)号：US07629207B2

公开(公告)日：2009-12-08

申请号：US11692716

申请日：2007-03-28

申请人： Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Young-kwan Cha

发明人： Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Young-kwan Cha

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/78678 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78684 ,  H01L29/78696

摘要： A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of manufacturing a bottom gate thin film transistor includes forming a bottom gate electrode on a substrate, forming a gate insulating layer on the substrate to cover the bottom gate electrode, forming an amorphous semiconductor layer, an N-type semiconductor layer and an electrode layer on the gate insulating layer sequentially, etching an electrode region and an N-type semiconductor layer region formed on the bottom gate electrode sequentially to expose an amorphous semiconductor layer region, melting the amorphous semiconductor layer region using a laser annealing method, and crystallizing the melted amorphous semiconductor layer region to form a laterally grown polycrystalline channel region.

摘要翻译： 相对简单且容易地形成具有大晶粒尺寸的多晶沟道区的底栅薄膜晶体管（“TFT”）的制造方法。 制造底栅极薄膜晶体管的方法包括在衬底上形成底栅电极，在衬底上形成栅极绝缘层以覆盖底栅电极，形成非晶半导体层，N型半导体层和电极 依次在栅极绝缘层上蚀刻形成在底栅电极上的电极区域和N型半导体层区域，以暴露非晶半导体层区域，使用激光退火法熔化非晶半导体层区域，并使 熔融的非晶半导体层区域以形成横向生长的多晶沟道区域。

公开(公告)号：US20080164479A1

公开(公告)日：2008-07-10

申请号：US12000242

申请日：2007-12-11

申请人： Wenxu Xianyu ,  Jung-hyun Lee ,  Hyung-Jin Bae ,  Young-soo Park

发明人： Wenxu Xianyu ,  Jung-hyun Lee ,  Hyung-Jin Bae ,  Young-soo Park

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/28537 ,  H01L27/1021 ,  H01L29/861

摘要： A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNx material layer and a poly-Si layer formed on the TaNx material layer. The semiconductor device including poly-Si may be manufactured by forming a TaNx material layer and forming a poly-Si layer by depositing silicon formed on the TaNx material layer and annealing silicon.

摘要翻译： 提供了包括多晶硅（poly-Si）的半导体器件及其制造方法。 该半导体器件包括形成在TaN xS材料层上的TaN 材料层和多晶硅层。 包括多晶硅的半导体器件可以通过形成TaN xS材料层并通过沉积形成在TaN材料层上的硅和退火形成多晶硅层来制造 硅。

公开(公告)号：US07999266B2

公开(公告)日：2011-08-16

申请号：US12000242

申请日：2007-12-11

申请人： Wenxu Xianyu ,  Jung-hyun Lee ,  Hyung-jin Bae ,  Young-soo Park

发明人： Wenxu Xianyu ,  Jung-hyun Lee ,  Hyung-jin Bae ,  Young-soo Park

IPC分类号： H01L29/43 ,  H01L21/283

CPC分类号： H01L21/28537 ,  H01L27/1021 ,  H01L29/861

摘要： A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNx material layer and a poly-Si layer formed on the TaNx material layer. The semiconductor device including poly-Si may be manufactured by forming a TaNx material layer and forming a poly-Si layer by depositing silicon formed on the TaNx material layer and annealing silicon.

摘要翻译： 提供了包括多晶硅（poly-Si）的半导体器件及其制造方法。 半导体器件包括形成在TaNx材料层上的TaNx材料层和多晶硅层。 可以通过形成TaNx材料层并通过沉积形成在TaNx材料层上的硅并退火硅来形成多晶硅层来制造包括多晶硅的半导体器件。

公开(公告)号：US20080102602A1

公开(公告)日：2008-05-01

申请号：US12003039

申请日：2007-12-19

申请人： Young-soo Park ,  Wenxu Xianyu ,  Takashi Noguchi

发明人： Young-soo Park ,  Wenxu Xianyu ,  Takashi Noguchi

IPC分类号： H01L21/46

CPC分类号： H01L21/76259 ,  H01L21/32134 ,  H01L21/76256 ,  H01L27/1266 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78687 ,  H01L2924/0002 ,  Y10S438/933 ,  H01L2924/00

摘要： Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating substrate, and a strained silicon layer formed on the SiO2 layer.

公开(公告)号：US07332412B2

公开(公告)日：2008-02-19

申请号：US11071150

申请日：2005-03-04

申请人： Young-soo Park ,  Wenxu Xianyu ,  Takashi Noguchi

发明人： Young-soo Park ,  Wenxu Xianyu ,  Takashi Noguchi

IPC分类号： H01L21/30

CPC分类号： H01L21/76259 ,  H01L21/32134 ,  H01L21/76256 ,  H01L27/1266 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78687 ,  H01L2924/0002 ,  Y10S438/933 ,  H01L2924/00

摘要： Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating substrate, and a strained silicon layer formed on the SiO2 layer.

摘要翻译： 提供了一种应变SOI结构和制造应变SOI结构的方法。 应变SOI结构包括绝缘衬底，形成在绝缘衬底上的SiO 2层以及形成在SiO 2层上的应变硅层。

公开(公告)号：US20070284580A1

公开(公告)日：2007-12-13

申请号：US11692716

申请日：2007-03-28

申请人： Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Young-kwan Cha

发明人： Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Young-kwan Cha

IPC分类号： H01L29/76 ,  H01L29/10

CPC分类号： H01L29/78678 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78684 ,  H01L29/78696

摘要： A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of manufacturing a bottom gate thin film transistor includes forming a bottom gate electrode on a substrate, forming a gate insulating layer on the substrate to cover the bottom gate electrode, forming an amorphous semiconductor layer, an N-type semiconductor layer and an electrode layer on the gate insulating layer sequentially, etching an electrode region and an N-type semiconductor layer region formed on the bottom gate electrode sequentially to expose an amorphous semiconductor layer region, melting the amorphous semiconductor layer region using a laser annealing method, and crystallizing the melted amorphous semiconductor layer region to form a laterally grown polycrystalline channel region.

摘要翻译： 相对简单且容易地形成具有大晶粒尺寸的多晶沟道区的底栅薄膜晶体管（“TFT”）的制造方法。 制造底栅极薄膜晶体管的方法包括在衬底上形成底栅电极，在衬底上形成栅极绝缘层以覆盖底栅电极，形成非晶半导体层，N型半导体层和电极 依次在栅极绝缘层上蚀刻形成在底栅电极上的电极区域和N型半导体层区域，以暴露非晶半导体层区域，使用激光退火法熔化非晶半导体层区域，并使 熔融的非晶半导体层区域以形成横向生长的多晶沟道区域。

公开(公告)号：US20060118870A1

公开(公告)日：2006-06-08

申请号：US11071150

申请日：2005-03-04

申请人： Young-soo Park ,  Wenxu Xianyu ,  Takashi Noguchi

发明人： Young-soo Park ,  Wenxu Xianyu ,  Takashi Noguchi

IPC分类号： H01L27/12

CPC分类号： H01L21/76259 ,  H01L21/32134 ,  H01L21/76256 ,  H01L27/1266 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78687 ,  H01L2924/0002 ,  Y10S438/933 ,  H01L2924/00

摘要： Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating substrate, and a strained silicon layer formed on the SiO2 layer.

摘要翻译： 提供了一种应变SOI结构和制造应变SOI结构的方法。 应变SOI结构包括绝缘衬底，形成在绝缘衬底上的SiO 2层以及形成在SiO 2层上的应变硅层。

公开(公告)号：US07919777B2

公开(公告)日：2011-04-05

申请号：US12566106

申请日：2009-09-24

申请人： Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Young-kwan Cha

发明人： Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Young-kwan Cha

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L29/04

CPC分类号： H01L29/78678 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78684 ,  H01L29/78696

摘要： A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of manufacturing a bottom gate thin film transistor includes forming a bottom gate electrode on a substrate, forming a gate insulating layer on the substrate to cover the bottom gate electrode, forming an amorphous semiconductor layer, an N-type semiconductor layer and an electrode layer on the gate insulating layer sequentially, etching an electrode region and an N-type semiconductor layer region formed on the bottom gate electrode sequentially to expose an amorphous semiconductor layer region, melting the amorphous semiconductor layer region using a laser annealing method, and crystallizing the melted amorphous semiconductor layer region to form a laterally grown polycrystalline channel region.

摘要翻译： 相对简单且容易地形成具有大晶粒尺寸的多晶沟道区的底栅薄膜晶体管（“TFT”）的制造方法。 制造底栅极薄膜晶体管的方法包括在衬底上形成底栅电极，在衬底上形成栅极绝缘层以覆盖底栅电极，形成非晶半导体层，N型半导体层和电极 依次在栅极绝缘层上蚀刻形成在底栅电极上的电极区域和N型半导体层区域，以暴露非晶半导体层区域，使用激光退火法熔化非晶半导体层区域，并使 熔融的非晶半导体层区域以形成横向生长的多晶沟道区域。