Thin film transistor array panel
    21.
    发明授权
    Thin film transistor array panel 有权
    薄膜晶体管阵列面板

    公开(公告)号:US08604469B2

    公开(公告)日:2013-12-10

    申请号:US12464920

    申请日:2009-05-13

    IPC分类号: H01L29/10

    摘要: A thin film transistor array panel includes a substrate, a gate line formed on the substrate and including a gate electrode, a gate insulating layer formed on the gate line, a semiconductor formed on the gate insulating layer and including a channel of a thin film transistor, a data line formed on the semiconductor and including a source electrode and a drain electrode formed on the semiconductor and opposite to the source electrode with respect to the channel of the thin film transistor, wherein the channel of the thin film transistor covers both side surfaces of the gate electrode.

    摘要翻译: 薄膜晶体管阵列面板包括基板,形成在基板上的栅极线,包括栅极电极,形成在栅极线上的栅极绝缘层,形成在栅极绝缘层上并包括薄膜晶体管的沟道的半导体 ,形成在半导体上的数据线,包括相对于薄膜晶体管的沟道形成在半导体上并与源电极相对的源电极和漏电极,其中薄膜晶体管的沟道覆盖两个侧表面 的栅电极。

    Display substrate and method of manufacturing the same
    22.
    发明授权
    Display substrate and method of manufacturing the same 有权
    显示基板及其制造方法

    公开(公告)号:US08598577B2

    公开(公告)日:2013-12-03

    申请号:US13177783

    申请日:2011-07-07

    IPC分类号: H01L29/786

    摘要: A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode.

    摘要翻译: 显示基板包括在基底基板上沿第一方向延伸的栅极线,在基底基板上的数据线,并且沿与第一方向交叉的第二方向延伸,栅极线上的栅极绝缘层,薄膜晶体管和 像素电极。 薄膜晶体管包括栅电极,电极连接栅极线,氧化物半导体图案以及氧化物半导体图案上的源电极和漏电极并彼此间隔开。 氧化物半导体图案包括包括氧化铟的第一半导体图案和包含无铟氧化物的第二半导体图案。 像素电极与漏电极电连接。

    Display substrate and a method of manufacturing the same
    23.
    发明授权
    Display substrate and a method of manufacturing the same 有权
    显示基板及其制造方法

    公开(公告)号:US08077275B2

    公开(公告)日:2011-12-13

    申请号:US12408213

    申请日:2009-03-20

    IPC分类号: G02F1/1339 G02F1/1335

    摘要: A display substrate includes a transistor layer, a plurality of color filters, a first blocking member, a supporting member, a circuit part, a second blocking member and a protruding member. The first blocking member is disposed between different color filters. The supporting member maintains a distance between a base substrate and a substrate facing the base substrate. A circuit part is disposed in a peripheral area surrounding a display area, and the circuit part includes a metal pattern and a contact electrode in contact with the metal pattern. The second blocking member includes substantially the same material as the first blocking member and the second blocking member covers the circuit part. The protruding member includes substantially the same material as the second blocking member, and is integrally formed with the second blocking member.

    摘要翻译: 显示基板包括晶体管层,多个滤色器,第一阻挡构件,支撑构件,电路部分,第二阻挡构件和突出构件。 第一阻挡构件设置在不同的滤色器之间。 支撑构件保持基底基板和面向基底基板的基板之间的距离。 电路部分设置在围绕显示区域的周边区域中,并且电路部分包括与金属图案接触的金属图案和接触电极。 第二阻挡构件包括与第一阻挡构件基本相同的材料,并且第二阻挡构件覆盖电路部分。 突出构件包括与第二阻挡构件基本相同的材料,并且与第二阻挡构件一体地形成。

    THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD OF THE SAME
    24.
    发明申请
    THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD OF THE SAME 有权
    薄膜晶体管显示面板及其制造方法

    公开(公告)号:US20110297930A1

    公开(公告)日:2011-12-08

    申请号:US13151102

    申请日:2011-06-01

    IPC分类号: H01L29/786 H01L21/44

    摘要: A TFT display panel having a high charge mobility and making it possible to obtain uniform electric characteristics with respect to a large-area display is provided as well as a manufacturing method thereof. A TFT display panel includes a gate electrode formed on an insulation substrate, a first gate insulting layer formed of SiNx on the gate electrode, a second gate insulting layer formed of SiOx on the first gate insulting layer, an oxide semiconductor layer formed to overlap the gate electrode and having a channel part, and a passivation layer formed of SiOx on the oxide semiconductor layer and the gate electrode, and the passivation layer includes a contact hole exposing the drain electrode. The contact hole has a shape in which the passivation layer of a portion directly exposed together with a metal occupies an area smaller than the upper passivation layer.

    摘要翻译: 提供具有高电荷迁移率并且可以获得相对于大面积显示器的均匀电特性的TFT显示面板及其制造方法。 TFT显示面板包括形成在绝缘基板上的栅极电极,栅极上由SiNx形成的第一栅极绝缘层,在第一栅极绝缘层上由SiOx形成的第二栅极绝缘层,形成为与栅极电极重叠的氧化物半导体层 栅电极,并具有通道部分,以及由氧化物半导体层和栅电极上的SiO x形成的钝化层,并且钝化层包括暴露漏电极的接触孔。 接触孔具有直接与金属一起暴露的部分的钝化层占据比上钝化层小的形状。

    THIN-FILM TRANSISTOR, ARRAY SUBSTRATE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME
    25.
    发明申请
    THIN-FILM TRANSISTOR, ARRAY SUBSTRATE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管,具有该薄膜晶体管的阵列基板及其制造方法

    公开(公告)号:US20110284852A1

    公开(公告)日:2011-11-24

    申请号:US13049783

    申请日:2011-03-16

    IPC分类号: H01L29/786 H01L21/336

    摘要: A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode.

    摘要翻译: 薄膜晶体管包括半导体图案,第一栅电极,源电极,漏电极和第二栅电极。 半导体图案形成在基板上。 第一导电层具有包括与半导体图案电绝缘的第一栅电极的图案。 第二导电层具有图案,其包括电连接到半导体图案的源电极,与源电极间隔开的漏电极和与第一栅电极电连接的第二栅电极。 第二栅电极与半导体图案,源电极和漏电极电绝缘。

    Display substrate, method for manufacturing the display substrate and display apparatus having the display substrate
    27.
    发明授权
    Display substrate, method for manufacturing the display substrate and display apparatus having the display substrate 有权
    显示基板,显示基板的制造方法以及具有显示基板的显示装置

    公开(公告)号:US07928440B2

    公开(公告)日:2011-04-19

    申请号:US12332117

    申请日:2008-12-10

    IPC分类号: H01L29/04 H01L29/15 H01L27/12

    CPC分类号: H01L27/124 G02F1/136286

    摘要: A display substrate includes a base substrate, a gate line, a gate insulation layer, a data line, a thin-film transistor (TFT) and a pixel electrode. The gate line is extended in a first direction on the base substrate. The gate insulation layer is formed on the base substrate to cover the gate line. The data line is extended in a second direction and intersects the gate line at an intersecting portion. At the intersecting portion, the data line is separated from the gate line by an air gap. In another embodiment, the data line also includes at least one etching hole extending to the air gap. The TFT is electrically connected to the data and the gate lines. The pixel electrode is electrically connected to the TFT.

    摘要翻译: 显示基板包括基底基板,栅极线,栅极绝缘层,数据线,薄膜晶体管(TFT)和像素电极。 栅极线在基底基板上沿第一方向延伸。 栅极绝缘层形成在基底基板上以覆盖栅极线。 数据线在第二方向上延伸并且在相交部分与栅极线相交。 在交叉部分,数据线通过气隙与栅极线分离。 在另一个实施例中,数据线还包括延伸到气隙的至少一个蚀刻孔。 TFT与数据和栅极线电连接。 像素电极电连接到TFT。

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    28.
    发明申请
    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    显示装置及其制造方法

    公开(公告)号:US20110079776A1

    公开(公告)日:2011-04-07

    申请号:US12772836

    申请日:2010-05-03

    IPC分类号: H01L33/26

    摘要: A display device includes a gate pattern, a semiconductor pattern, a source pattern and a pixel electrode are provided. The gate pattern is formed on a base substrate and includes a gate line and a gate electrode. The semiconductor pattern is formed on the base substrate having the gate pattern and includes an oxide semiconductor. The source pattern is formed from a data metal layer and formed on the base substrate having the semiconductor pattern, and includes a data line, a source electrode and a drain electrode. The data metal layer includes a first copper alloy layer, and a lower surface of the data metal layer substantially coincides with an upper surface of the semiconductor pattern. The pixel electrode is formed on the base substrate having the source pattern and electrically connected to the drain electrode. Thus, manufacturing processes may be simplified, and reliability may be improved.

    摘要翻译: 显示装置包括栅极图案,半导体图案,源图案和像素电极。 栅极图案形成在基底基板上,并且包括栅极线和栅电极。 半导体图案形成在具有栅极图案的基底基板上,并且包括氧化物半导体。 源图案由数据金属层形成并形成在具有半导体图案的基底基板上,并且包括数据线,源电极和漏电极。 数据金属层包括第一铜合金层,数据金属层的下表面基本上与半导体图案的上表面重合。 像素电极形成在具有源极图案的基底基板上并与漏电极电连接。 因此,可以简化制造工艺,并且可以提高可靠性。

    THIN-FILM TRANSISTOR DISPLAY PANEL AND METHOD OF FABRICATING THE SAME
    29.
    发明申请
    THIN-FILM TRANSISTOR DISPLAY PANEL AND METHOD OF FABRICATING THE SAME 有权
    薄膜晶体管显示面板及其制造方法

    公开(公告)号:US20100059745A1

    公开(公告)日:2010-03-11

    申请号:US12499009

    申请日:2009-07-07

    IPC分类号: H01L29/786 H01L21/34

    摘要: Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.

    摘要翻译: 提供了一种薄膜晶体管(TFT)显示面板,其具有可以有效制造的改进的电气特性和制造TFT显示面板的方法。 TFT显示面板包括:形成在绝缘基板上的栅极布线; 形成在栅极布线上的氧化物有源层图案; 形成在氧化物有源层图案上以跨过栅极布线的数据布线; 形成在氧化物有源层图案和数据布线上并由氮化硅(SiNx)制成的钝化层; 以及形成在钝化层上的像素电极。

    Liquid crystal display
    30.
    发明申请
    Liquid crystal display 有权
    液晶显示器

    公开(公告)号:US20090033820A1

    公开(公告)日:2009-02-05

    申请号:US12152619

    申请日:2008-05-14

    IPC分类号: G02F1/1343 G02F1/133

    摘要: A liquid crystal display to prevent light leakage with an improvement of aperture ratio and a reduction of load of a data line is provided. The liquid crystal display includes a gate line and a storage electrode line formed on a insulating substrate and apart from each other, a first data line and a second data line intersecting the gate line, a first pixel electrode defined by the gate line and the first data line, and a second pixel electrode defined by the gate line and the second data line and neighboring the first pixel electrode. Also, a blocking electrode between the first pixel electrode and the second pixel electrode is included, wherein at least portion of the first data line is disposed under the first pixel electrode, and at least portion of the blocking electrode is disposed under the second pixel electrode and apart from the first data line.

    摘要翻译: 提供了一种液晶显示器,用于防止光泄漏,同时提高了开口率和减少了数据线的负载。 液晶显示器包括形成在绝缘基板上并且彼此分开的栅极线和存储电极线,与栅极线相交的第一数据线和第二数据线,由栅极线和第一栅极线限定的第一像素电极 数据线和由栅极线和第二数据线限定并与第一像素电极相邻的第二像素电极。 此外,包括第一像素电极和第二像素电极之间的阻挡电极,其中第一数据线的至少一部分设置在第一像素电极下方,并且阻挡电极的至少一部分设置在第二像素电极下方 并且除了第一条数据线之外。