摘要:
A thin film transistor array panel includes a substrate, a gate line formed on the substrate and including a gate electrode, a gate insulating layer formed on the gate line, a semiconductor formed on the gate insulating layer and including a channel of a thin film transistor, a data line formed on the semiconductor and including a source electrode and a drain electrode formed on the semiconductor and opposite to the source electrode with respect to the channel of the thin film transistor, wherein the channel of the thin film transistor covers both side surfaces of the gate electrode.
摘要:
A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode.
摘要:
A display substrate includes a transistor layer, a plurality of color filters, a first blocking member, a supporting member, a circuit part, a second blocking member and a protruding member. The first blocking member is disposed between different color filters. The supporting member maintains a distance between a base substrate and a substrate facing the base substrate. A circuit part is disposed in a peripheral area surrounding a display area, and the circuit part includes a metal pattern and a contact electrode in contact with the metal pattern. The second blocking member includes substantially the same material as the first blocking member and the second blocking member covers the circuit part. The protruding member includes substantially the same material as the second blocking member, and is integrally formed with the second blocking member.
摘要:
A TFT display panel having a high charge mobility and making it possible to obtain uniform electric characteristics with respect to a large-area display is provided as well as a manufacturing method thereof. A TFT display panel includes a gate electrode formed on an insulation substrate, a first gate insulting layer formed of SiNx on the gate electrode, a second gate insulting layer formed of SiOx on the first gate insulting layer, an oxide semiconductor layer formed to overlap the gate electrode and having a channel part, and a passivation layer formed of SiOx on the oxide semiconductor layer and the gate electrode, and the passivation layer includes a contact hole exposing the drain electrode. The contact hole has a shape in which the passivation layer of a portion directly exposed together with a metal occupies an area smaller than the upper passivation layer.
摘要:
A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode.
摘要:
A thin-film transistor (TFT) substrate having reduced defects is fabricated using a reduced number of masks. The TFT substrate includes gate wiring formed on a substrate. The gate wiring includes a gate electrode. A semiconductor pattern is formed on the gate wiring. An etch-stop pattern is formed on the semiconductor pattern. Data wiring includes a source electrode which is formed on the semiconductor pattern and the etch-stop pattern. Each of the gate wiring and the data wiring includes a copper-containing layer and a buffer layer formed on or under the copper-containing layer.
摘要:
A display substrate includes a base substrate, a gate line, a gate insulation layer, a data line, a thin-film transistor (TFT) and a pixel electrode. The gate line is extended in a first direction on the base substrate. The gate insulation layer is formed on the base substrate to cover the gate line. The data line is extended in a second direction and intersects the gate line at an intersecting portion. At the intersecting portion, the data line is separated from the gate line by an air gap. In another embodiment, the data line also includes at least one etching hole extending to the air gap. The TFT is electrically connected to the data and the gate lines. The pixel electrode is electrically connected to the TFT.
摘要:
A display device includes a gate pattern, a semiconductor pattern, a source pattern and a pixel electrode are provided. The gate pattern is formed on a base substrate and includes a gate line and a gate electrode. The semiconductor pattern is formed on the base substrate having the gate pattern and includes an oxide semiconductor. The source pattern is formed from a data metal layer and formed on the base substrate having the semiconductor pattern, and includes a data line, a source electrode and a drain electrode. The data metal layer includes a first copper alloy layer, and a lower surface of the data metal layer substantially coincides with an upper surface of the semiconductor pattern. The pixel electrode is formed on the base substrate having the source pattern and electrically connected to the drain electrode. Thus, manufacturing processes may be simplified, and reliability may be improved.
摘要:
Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.
摘要:
A liquid crystal display to prevent light leakage with an improvement of aperture ratio and a reduction of load of a data line is provided. The liquid crystal display includes a gate line and a storage electrode line formed on a insulating substrate and apart from each other, a first data line and a second data line intersecting the gate line, a first pixel electrode defined by the gate line and the first data line, and a second pixel electrode defined by the gate line and the second data line and neighboring the first pixel electrode. Also, a blocking electrode between the first pixel electrode and the second pixel electrode is included, wherein at least portion of the first data line is disposed under the first pixel electrode, and at least portion of the blocking electrode is disposed under the second pixel electrode and apart from the first data line.