摘要:
To provide a contact probe which can easily be connected with a measurement apparatus electrically, can measure a high speed and high frequency signal with a fine pitch easily and correctly, and can easily cope with signal measurement for a plurality of channels, and a method of making the contact probe.It includes a first printed wiring board 3 having a signal electrode 10a and a ground electrode 10b used as a contact part with respect to a measuring object, in which the signal electrode 10a and ground electrode 10b are formed of a metal wiring pattern on a substrate, and a second printed wiring board 2 with a coaxial line structure having shield electrodes 12, 17, 18 which enclose a signal line 15a and the surroundings of the signal line 15a through an insulating layer. The signal electrode 10a of the first printed wiring board 3 and the signal line 15a of the second printed wiring board 2 are electrically connected together, and the ground electrode 10b of the first printed wiring board 3 and the shield electrodes 12, 17, 18 of the second printed wiring board 2 are electrically connected together.
摘要:
An interposer having multi-layer fine wiring structure which comprises an insulating layer made of photosensitive polyimide which is photosensitive organic material and a wiring layer portion made of metal, such as copper, silver, gold, aluminum, palladium, indium, titanium, tantalum, and niobium, functions as wiring in an integrated circuit chip, wherein junctions between the integrated circuit chip and the interposer are formed by micron to submicron size fine connection metal pads or bumps which are formed on both the integrated circuit chip and the interposer.
摘要:
There is provided a contact probe that is smaller than 50 μm in a pitch between a signal electrode and a ground electrode and can correctly conduct a high-speed high-frequency measurement, a measuring pad used for the contact probe, and a method of manufacturing the contact probe. The contact probe includes: a tip member having a signal electrode 10a and a ground electrode 11a that are put into contact with an object to be measured; and a coaxial cable 1 having a core 1b electrically connected to the signal electrode 10a and an outer covering conductor 1a electrically connected to the ground electrode 1a, wherein the tip member is formed on a printed wiring board 2, and wherein the signal electrode 10a and the ground electrode 11a are constructed of fine coplanar strip lines formed on an insulating board 2a.
摘要:
One or more superconducting memory cells capable of storing binary values as the presence or absence of a persisting loop current in their superconducting memory loops are connected in series by a circuit current line. This arrangement is provided with a set gate which switches to the voltage state and outputs circuit current from its output terminal to one end of the circuit current line when write command current is supplied to its control terminal and is further provided with a sense gate whose control terminal is series coupled though a capacitance element with the same one end of the circuit current line and whose ground side terminal is connected with the other end of the circuit control line thereby forming through the sense gate a read-out loop for receiving as differential current persisting loop current selectively discharged from the memory loop. The differential current causes the sense gate to switch itself to the voltage state and output a sense current. At least a part of the sense current is supplied to the control terminal of the set gate as rewrite command current. As a result, the read-out of binary values from the superconducting memory loop can be conducted in a manner that is equivalent to nondestructive read-out. As the differential current dissipates automatically over a period of time determined by a prescribed time constant, there remains no residual current which might cause an operational error.
摘要:
An elementary cell uses single-flux-quanta as two-valued logic propagation signals and is effective for Constructing asynchronous superconducting logic circuits. The elementary cell comprises one OR circuit section and one AND circuit section. Input pulses applied to two input terminals of the elementary cell are split at signal splitting sections in the elementary cell and applied to both inputs of the OR circuit section and both inputs of the AND circuit section. The output of the OR circuit section is defined as the OR output of the elementary cell. A first arrival pulse memory section is provided in the AND circuit section and when one of two input pulses input to the two input terminals of the AND circuit section arrives before the other, this fact is recorded in the first arrival pulse memory section as logical "1". When the other input pulse arrives while logical "1" is recorded in the first arrival pulse memory section, the AND circuit section produces an AND output which is defined as the AND output of the elementary cell. When a reset signal pulse is applied to a reset terminal, the first arrival pulse memory section is reset.
摘要:
Setting a polishing rate and a polishing time in chemical mechanical polishing can be performed with high accuracy by considering a product wafer of an object to be polished, and an instrumental error between apparatuses to be used, etc. By using, as a calculating formula, a formula well approximating a portion of a curve representing a state of chemical mechanical polishing on a side showing a target polishing amount, the polishing rate and the polishing time can be set with high accuracy according to a state of chemical mechanical polishing for actually polishing a product wafer. In the calculating formula, a parameter “A” relating to a film property of a film of an object to be polished, a parameter “B” relating to a roughness state of a film surface, and a parameter “C” relating to an instrumental error differential between apparatuses of a chemical mechanical polishing apparatus are joined by operators.
摘要:
Setting a polishing rate and a polishing time in chemical mechanical polishing can be performed with high accuracy by considering a product wafer of an object to be polished, and an instrumental error between apparatuses to be used, etc. By using, as a calculating formula, a formula well approximating a portion of a curve representing a state of chemical mechanical polishing on a side showing a target polishing amount, the polishing rate and the polishing time can be set with high accuracy according to a state of chemical mechanical polishing for actually polishing a product wafer. In the calculating formula, a parameter “A” relating to a film property of a film of an object to be polished, a parameter “B” relating to a roughness state of a film surface, and a parameter “C” relating to an instrumental error differential between apparatuses of a chemical mechanical polishing apparatus are joined by operators.