Contact probe and method of making the same
    21.
    发明授权
    Contact probe and method of making the same 有权
    接触探头及其制作方法

    公开(公告)号:US07990165B2

    公开(公告)日:2011-08-02

    申请号:US12297732

    申请日:2007-04-19

    IPC分类号: G01R31/02

    摘要: To provide a contact probe which can easily be connected with a measurement apparatus electrically, can measure a high speed and high frequency signal with a fine pitch easily and correctly, and can easily cope with signal measurement for a plurality of channels, and a method of making the contact probe.It includes a first printed wiring board 3 having a signal electrode 10a and a ground electrode 10b used as a contact part with respect to a measuring object, in which the signal electrode 10a and ground electrode 10b are formed of a metal wiring pattern on a substrate, and a second printed wiring board 2 with a coaxial line structure having shield electrodes 12, 17, 18 which enclose a signal line 15a and the surroundings of the signal line 15a through an insulating layer. The signal electrode 10a of the first printed wiring board 3 and the signal line 15a of the second printed wiring board 2 are electrically connected together, and the ground electrode 10b of the first printed wiring board 3 and the shield electrodes 12, 17, 18 of the second printed wiring board 2 are electrically connected together.

    摘要翻译: 为了提供可以容易地与测量装置电连接的接触探针,可以容易且正确地测量具有细间距的高速和高频信号,并且可以容易地处理多个通道的信号测量,以及一种方法 使接触探针。 它包括具有信号电极10a和接地电极10b的第一印刷线路板3,该接地电极用作相对于测量对象的接触部分,其中信号电极10a和接地电极10b由基板上的金属布线图形成 以及具有同轴线结构的第二印刷布线板2,其具有通过绝缘层包围信号线15a和信号线15a的周围的屏蔽电极12,17,18。 第一印刷线路板3的信号电极10a和第二印刷线路板2的信号线15a电连接在一起,第一印刷线路板3的接地电极10b和屏蔽电极12,17,18的 第二印刷线路板2电连接在一起。

    Contact probe, measuring pad used for the contact probe, and method of manufacturing the contact probe
    23.
    发明授权
    Contact probe, measuring pad used for the contact probe, and method of manufacturing the contact probe 有权
    接触式探针,用于接触式探针的测量垫以及接触式探头的制造方法

    公开(公告)号:US07208966B2

    公开(公告)日:2007-04-24

    申请号:US11136572

    申请日:2005-05-25

    IPC分类号: G01R31/02

    摘要: There is provided a contact probe that is smaller than 50 μm in a pitch between a signal electrode and a ground electrode and can correctly conduct a high-speed high-frequency measurement, a measuring pad used for the contact probe, and a method of manufacturing the contact probe. The contact probe includes: a tip member having a signal electrode 10a and a ground electrode 11a that are put into contact with an object to be measured; and a coaxial cable 1 having a core 1b electrically connected to the signal electrode 10a and an outer covering conductor 1a electrically connected to the ground electrode 1a, wherein the tip member is formed on a printed wiring board 2, and wherein the signal electrode 10a and the ground electrode 11a are constructed of fine coplanar strip lines formed on an insulating board 2a.

    摘要翻译: 提供了在信号电极和接地电极之间以间距小于50um的接触探针,并且可以正确地进行高速高频测量,用于接触探针的测量垫以及制造方法 接触探头。 接触探针包括:具有与被测量物体接触的信号电极10a和接地电极11a的尖端部件; 以及具有电连接到信号电极10a的芯1b和电连接到接地电极1a的外部覆盖导体1A的同轴电缆1,其中尖端构件形成在印刷线路板2上,并且其中, 信号电极10a和接地电极11a由形成在绝缘板2a上的精细共面带状线构成。

    Josephson memory circuit
    24.
    发明授权
    Josephson memory circuit 失效
    约瑟夫森记忆电路

    公开(公告)号:US5260264A

    公开(公告)日:1993-11-09

    申请号:US663456

    申请日:1991-03-04

    IPC分类号: G11C11/44 H01B12/00 H01L39/12

    摘要: One or more superconducting memory cells capable of storing binary values as the presence or absence of a persisting loop current in their superconducting memory loops are connected in series by a circuit current line. This arrangement is provided with a set gate which switches to the voltage state and outputs circuit current from its output terminal to one end of the circuit current line when write command current is supplied to its control terminal and is further provided with a sense gate whose control terminal is series coupled though a capacitance element with the same one end of the circuit current line and whose ground side terminal is connected with the other end of the circuit control line thereby forming through the sense gate a read-out loop for receiving as differential current persisting loop current selectively discharged from the memory loop. The differential current causes the sense gate to switch itself to the voltage state and output a sense current. At least a part of the sense current is supplied to the control terminal of the set gate as rewrite command current. As a result, the read-out of binary values from the superconducting memory loop can be conducted in a manner that is equivalent to nondestructive read-out. As the differential current dissipates automatically over a period of time determined by a prescribed time constant, there remains no residual current which might cause an operational error.

    摘要翻译: 通过电路电流线将能够存储二进制值的一个或多个超导存储器单元串联连接在其超导存储器回路中的持续回路电流的存在或不存在。 该配置设置有一个设定门,当写命令电流被提供给其控制端时,其转换到电压状态并将电路电流从其输出端子输出到电路电流线的一端,并且还设置有控制门 端子通过电路电流线的同一端的电容元件串联耦合,并且其接地端与电路控制线的另一端相连,从而通过读出门形成用于接收作为差分电流的读出环 持续的回路电流从存储器回路中选择性地放电。 差分电流使感测门自身切换到电压状态并输出感测电流。 感测电流的至少一部分作为重写命令电流被提供给设定门的控制端。 结果,可以以等同于非破坏性读出的方式来读取来自超导存储器环路的二进制值。 由于差分电流在由规定时间常数决定的时间段内自动消耗,所以不存在可能导致操作错误的剩余电流。

    Elementary cell for constructing asynchronous superconducting logic
circuits
    25.
    发明授权
    Elementary cell for constructing asynchronous superconducting logic circuits 失效
    用于构造异步超导逻辑电路的基本单元

    公开(公告)号:US5598105A

    公开(公告)日:1997-01-28

    申请号:US562746

    申请日:1995-11-27

    IPC分类号: H01L39/22 H03K19/195

    CPC分类号: H03K19/1954

    摘要: An elementary cell uses single-flux-quanta as two-valued logic propagation signals and is effective for Constructing asynchronous superconducting logic circuits. The elementary cell comprises one OR circuit section and one AND circuit section. Input pulses applied to two input terminals of the elementary cell are split at signal splitting sections in the elementary cell and applied to both inputs of the OR circuit section and both inputs of the AND circuit section. The output of the OR circuit section is defined as the OR output of the elementary cell. A first arrival pulse memory section is provided in the AND circuit section and when one of two input pulses input to the two input terminals of the AND circuit section arrives before the other, this fact is recorded in the first arrival pulse memory section as logical "1". When the other input pulse arrives while logical "1" is recorded in the first arrival pulse memory section, the AND circuit section produces an AND output which is defined as the AND output of the elementary cell. When a reset signal pulse is applied to a reset terminal, the first arrival pulse memory section is reset.

    摘要翻译: 基本单元使用单通量量子作为二值逻辑传播信号,对于构造异步超导逻辑电路是有效的。 基本单元包括一个OR电路部分和一个AND电路部分。 施加到基本单元的两个输入端子的输入脉冲在基本单元中的信号分离部分处被分离,并且被施加到“或”电路部分的两个输入端和“与”电路部分的两个输入端。 OR电路部分的输出被定义为基本单元的OR输出。 在AND电路部分中设置第一到达脉冲存储器部分,并且当输入到AND电路部分的两个输入端子的两个输入脉冲之一到达另一个时,该事实被记录在第一到达脉冲存储器部分中作为逻辑“ 1“。 当在第一到达脉冲存储器部分中记录逻辑“1”时另一个输入脉冲到达时,与电路部分产生被定义为基本单元的与输出的“与”输出。 当将复位信号脉冲施加到复位端子时,第一到达脉冲存储器部分被复位。

    Chemical mechanical polishing method, chemical mechanical polishing system, and manufacturing method of semiconductor device
    26.
    发明申请
    Chemical mechanical polishing method, chemical mechanical polishing system, and manufacturing method of semiconductor device 失效
    化学机械抛光方法,化学机械抛光系统以及半导体器件的制造方法

    公开(公告)号:US20050197046A1

    公开(公告)日:2005-09-08

    申请号:US11063997

    申请日:2005-02-24

    CPC分类号: B24B37/005 B24B49/03

    摘要: Setting a polishing rate and a polishing time in chemical mechanical polishing can be performed with high accuracy by considering a product wafer of an object to be polished, and an instrumental error between apparatuses to be used, etc. By using, as a calculating formula, a formula well approximating a portion of a curve representing a state of chemical mechanical polishing on a side showing a target polishing amount, the polishing rate and the polishing time can be set with high accuracy according to a state of chemical mechanical polishing for actually polishing a product wafer. In the calculating formula, a parameter “A” relating to a film property of a film of an object to be polished, a parameter “B” relating to a roughness state of a film surface, and a parameter “C” relating to an instrumental error differential between apparatuses of a chemical mechanical polishing apparatus are joined by operators.

    摘要翻译: 通过考虑待抛光对象物的产品晶片和待使用的装置之间的仪器误差等,可以高精度地进行化学机械抛光中的抛光速度和抛光时间的设定。通过使用作为计算公式, 可以根据实际研磨的化学机械抛光的状态,高精度地设定好近似于表示化学机械研磨状态的曲线部分的公式,该曲线表示目标研磨量,抛光速度和研磨时间 产品晶圆。 在计算式中,与被研磨对象物的膜的膜特性,膜表面的粗糙状态相关的参数“B”以及与仪器的粗糙状态有关的参数“C”的参数“A” 化学机械抛光装置的装置之间的误差差别由操作者连接起来。

    Chemical mechanical polishing method, chemical mechanical polishing system, and manufacturing method of semiconductor device
    27.
    发明授权
    Chemical mechanical polishing method, chemical mechanical polishing system, and manufacturing method of semiconductor device 失效
    化学机械抛光方法,化学机械抛光系统以及半导体器件的制造方法

    公开(公告)号:US07234998B2

    公开(公告)日:2007-06-26

    申请号:US11063997

    申请日:2005-02-24

    IPC分类号: B24B49/00

    CPC分类号: B24B37/005 B24B49/03

    摘要: Setting a polishing rate and a polishing time in chemical mechanical polishing can be performed with high accuracy by considering a product wafer of an object to be polished, and an instrumental error between apparatuses to be used, etc. By using, as a calculating formula, a formula well approximating a portion of a curve representing a state of chemical mechanical polishing on a side showing a target polishing amount, the polishing rate and the polishing time can be set with high accuracy according to a state of chemical mechanical polishing for actually polishing a product wafer. In the calculating formula, a parameter “A” relating to a film property of a film of an object to be polished, a parameter “B” relating to a roughness state of a film surface, and a parameter “C” relating to an instrumental error differential between apparatuses of a chemical mechanical polishing apparatus are joined by operators.

    摘要翻译: 通过考虑待抛光对象物的产品晶片和待使用的装置之间的仪器误差等,可以高精度地进行化学机械抛光中的抛光速度和抛光时间的设定。通过使用作为计算公式, 可以根据实际研磨的化学机械抛光的状态,高精度地设定好近似于表示化学机械研磨状态的曲线部分的公式,该曲线表示目标研磨量,抛光速度和研磨时间 产品晶圆。 在计算式中,与被研磨对象物的膜的膜特性,膜表面的粗糙状态相关的参数“B”以及与仪器的粗糙状态有关的参数“C”的参数“A” 化学机械抛光装置的装置之间的误差差别由操作者连接起来。