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    MAGNETO-RESISTIVE EFFECT DEVICE AND MAGNETIC DISK SYSTEM
    21.
    发明申请
    MAGNETO-RESISTIVE EFFECT DEVICE AND MAGNETIC DISK SYSTEM 有权
    磁电阻效应器和磁盘系统

    公开(公告)号：US20080170336A1

    公开(公告)日：2008-07-17

    申请号：US11968911

    申请日：2008-01-03

    申请人： Yoshihiro TSUCHIYA ,  Tomohito Mizuno ,  Kei Hirata ,  Koji Shimazawa ,  Shinji Hara

    发明人： Yoshihiro TSUCHIYA ,  Tomohito Mizuno ,  Kei Hirata ,  Koji Shimazawa ,  Shinji Hara

    IPC分类号： G11B5/33

    CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3993 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01L43/10

    摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having the CPP (current perpendicular to plane) structure comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, the semiconductor oxide layer that forms a part of said spacer layer contains zinc oxide as its main component wherein the main component zinc oxide contains an additive metal, and the additive metal is less likely to be oxidized than zinc. It is thus possible to keep the area resistivity of the device low as desired, and make the semiconductor oxide layer forming a part of the spacer layer thick while holding back any noise increase. This makes sure the excellent advantages that any variation of the area resistivity of the device is inhibited while the S/N is prevented from getting worse, and the reliability of film characteristics is much more improved.

    摘要翻译： 本发明提供了一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），该结构包括间隔层，并且第一铁磁层和第二铁磁层彼此层叠，间隔层插入 在它们之间具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及介于第一非磁性金属层之间的半导体氧化物层 和第二非磁性金属层，形成所述间隔层的一部分的半导体氧化物层含有氧化锌作为主要成分，其中主要成分氧化锌含有添加金属，并且添加金属不太可能被氧化成锌。 因此，可以根据需要保持器件的面积电阻率低，并且使得形成间隔层的一部分的半导体氧化物层变厚，同时阻止任何噪声增加。 这确保了防止S / N变差的装置的面电阻率的任何变化被抑制的优点，并且膜特性的可靠性得到更大的改善。

    MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER CONTAINING GALLIUM OXIDE, PARTIALLY OXIDIZED COPPER
    22.
    发明申请
    MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER CONTAINING GALLIUM OXIDE, PARTIALLY OXIDIZED COPPER 有权
    含有氧化铝，部分氧化铜的间隔层的磁电阻效应元件

    公开(公告)号：US20120237796A1

    公开(公告)日：2012-09-20

    申请号：US13049195

    申请日：2011-03-16

    申请人： Hayato KOIKE ,  Tsutomu CHOU ,  Yoshihiro TSUCHIYA ,  Hironobu MATSUZAWA

    发明人： Hayato KOIKE ,  Tsutomu CHOU ,  Yoshihiro TSUCHIYA ,  Hironobu MATSUZAWA

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996 ,  Y10T428/1121

    摘要： A magneto-resistive effect (MR) element includes first and second magnetic layers where a relative angle formed by magnetization directions changes in response to an external magnetic field and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes a main spacer layer that is composed of gallium oxide as a primary component and a bottom layer that is positioned between the main spacer layer and the first magnetic layer and that is composed of partially oxidized copper as a primary component.

    摘要翻译： 磁阻效应（MR）元件包括第一和第二磁性层，其中由磁化方向形成的相对角响应于外部磁场而变化，并且间隔层位于第一磁性层和第二磁性层之间。 第一磁性层定位成比第二磁性层更靠近形成MR元件的衬底。 间隔层包括由氧化镓作为主要成分构成的主间隔层和位于主间隔层和第一磁性层之间并由部分氧化的铜作为主要成分的底层。

    METHOD FOR MANUFACTURING HEAD INCLUDING LIGHT SOURCE UNIT FOR THERMAL ASSIST
    24.
    发明申请
    METHOD FOR MANUFACTURING HEAD INCLUDING LIGHT SOURCE UNIT FOR THERMAL ASSIST 有权
    用于制造包括用于热辅助的光源单元的头的方法

    公开(公告)号：US20120090162A1

    公开(公告)日：2012-04-19

    申请号：US12904553

    申请日：2010-10-14

    申请人： Koji SHIMAZAWA ,  Seiichi TAKAYAMA ,  Nobuyuki MORI ,  Yoshihiro TSUCHIYA ,  Shinji HARA

    发明人： Koji SHIMAZAWA ,  Seiichi TAKAYAMA ,  Nobuyuki MORI ,  Yoshihiro TSUCHIYA ,  Shinji HARA

    IPC分类号： G11B5/127

    CPC分类号： G11B5/314 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3967 ,  G11B5/6088 ,  G11B2005/001 ,  G11B2005/0021 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/5313 ,  Y10T29/53191

    摘要： Provided is a method for manufacturing a thermally-assisted magnetic recording head including a light source unit with a light source and a slider with an optical system. The method comprises steps of: adhering by suction the light source unit with a back holding jig; moving the back holding jig, then aligning a light-emission center of the light source with a light-receiving end surface of the optical system in directions within a slider back surface of the slider; bringing the light source unit into contact with the slider back surface, with a suction surface of the back holding jig tilted from the normal to the slider back surface; applying a load to a load application surface of the unit substrate by a loading means to bring a joining surface of the light source unit into conformity with the slider back surface; and bonding the light source unit and the slider. This method can improve the conformity, thereby achieving adequately strong junction and adequately high accuracy in position.

    摘要翻译： 提供一种制造包括具有光源的光源单元和具有光学系统的滑块的热辅助磁记录头的方法。 该方法包括以下步骤：用后保持夹具吸附光源单元; 移动后保持夹具，然后将光源的发光中心与光学系统的光接收端面沿滑块的滑块后表面内的方向对准; 使光源单元与滑块后表面接触，后保持夹具的吸力表面从滑块后表面的法线倾斜; 通过加载装置将负载施加到单元基板的负载施加表面，以使光源单元的接合表面与滑块背面一致; 并且接合光源单元和滑块。 该方法可以改善一致性，从而实现足够强的接合和足够高的位置精度。

    FABRICATION PROCESS FOR MAGNETO-RESISTIVE EFFECT DEVICES OF THE CPP STRUCTURE
    28.
    发明申请
    FABRICATION PROCESS FOR MAGNETO-RESISTIVE EFFECT DEVICES OF THE CPP STRUCTURE 失效
    CPP结构磁阻效应器件的制造工艺

    公开(公告)号：US20080052896A1

    公开(公告)日：2008-03-06

    申请号：US11757174

    申请日：2007-06-01

    申请人： Yoshihiro TSUCHIYA ,  Tomohito Mizuno ,  Koji Shimazawa

    发明人： Yoshihiro TSUCHIYA ,  Tomohito Mizuno ,  Koji Shimazawa

    IPC分类号： G11B5/127

    CPC分类号： H01F41/183 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3906 ,  H01F10/1936 ,  H01F10/3268 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49034 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： A free layer functions such that a magnetization direction changes depending on an external magnetic field, and is made up of a multilayer structure including a first Heusler alloy layer, and a fixed magnetization layer takes a form wherein an inner pin layer and an outer pin layer are stacked one upon another with a nonmagnetic intermediated layer sandwiched between them. The inner pin layer is made up of a multilayer structure including a second Heusler alloy layer. The first and second Heusler alloy layers are each formed by a co-sputtering technique using a split target split into at least two sub-targets in such a way as to constitute a Heusler alloy layer composition. When the Heusler alloy layer is formed, therefore, it is possible to bring up a film-deposition rate, improve productivity, and improve the performance of the device.

    摘要翻译： 自由层的功能使得磁化方向根据外部磁场而变化，并且由包括第一Heusler合金层的多层结构构成，并且固定磁化层采用其中内部销层和外部销层 彼此叠置，夹在它们之间的非磁性中间层。 内销层由包括第二Heusler合金层的多层结构构成。 第一和第二Heusler合金层各自通过共溅射技术形成，其使用分裂的目标分成至少两个子靶，以构成Heusler合金层组成。 因此，当形成Heusler合金层时，可以提高膜沉积速率，提高生产率并提高器件的性能。