Thick film photoresist composition and method of forming resist pattern
    21.
    发明授权
    Thick film photoresist composition and method of forming resist pattern 有权
    厚膜光致抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号:US07598014B2

    公开(公告)日:2009-10-06

    申请号:US10578398

    申请日:2004-11-18

    IPC分类号: G03F7/00 G03F7/004

    摘要: A negative thick film photoresist composition with improved alkali developability is provided. The composition comprises: (A) a resin component containing (a) from 61 to 90% by weight of a structural unit derived from a cyclic alkyl (meth)acrylate ester, and (b) a structural unit derived from a radical polymerizable compound containing a hydroxyl group, (B) a polymerizable compound containing at least one ethylenic unsaturated double bond, (C) a photopolymerization initiator, and (D) an organic solvent.

    摘要翻译: 提供了具有改善的碱显影性的负厚膜光致抗蚀剂组合物。 该组合物包含:(A)含有(a)61〜90重量%的衍生自(甲基)丙烯酸环状烷基酯的结构单元的树脂成分,(b)衍生自含有 羟基,(B)含有至少一个烯属不饱和双键的聚合性化合物,(C)光聚合引发剂,(D)有机溶剂。

    Developer composition for resists and method for formation of resist pattern
    22.
    发明授权
    Developer composition for resists and method for formation of resist pattern 有权
    用于抗蚀剂的显影剂组合物和形成抗蚀剂图案的方法

    公开(公告)号:US07335465B2

    公开(公告)日:2008-02-26

    申请号:US10560155

    申请日:2004-06-10

    IPC分类号: G03F7/30 G03G7/32

    CPC分类号: G03F7/322

    摘要: To provide a developer composition for resists, capable of improving dimensional controllability of a resist pattern. The developer composition for resists comprises an organic quaternary ammonium base as a main component, said developer composition further comprising an anionic surfactant represented by the following general formula (I), and SO42−, the content of S42− being from 0.01 to 1% by mass. In the formula, at least one of R1 and R2 represents an alkyl or alkoxy group having 5 to 18 carbon atoms and the other one represents a hydrogen atom, or an alkyl or alkoxy group having 5 to 18 carbon atoms, and at least one of R3, R4 and R5 represents an ammonium sulfonate group or a sulfonic acid-substituted ammonium group and the others represent a hydrogen atom, an ammonium sulfonate group or a sulfonic acid-substituted ammonium group.

    摘要翻译: 提供能够提高抗蚀剂图案的尺寸可控性的抗蚀剂用显影剂组合物。 用于抗蚀剂的显影剂组合物包含有机季铵碱作为主要成分,所述显影剂组合物还包含由以下通式(I)表示的阴离子表面活性剂和SO 4 - / SUP>,其中S 2 的含量为0.01〜1质量%。 在该式中,R 1和R 2中的至少一个表示具有5至18个碳原子的烷基或烷氧基,另一个表示氢原子,或 具有5至18个碳原子的烷基或烷氧基,并且R 3,R 4和R 5中的至少一个表示磺酸铵基团 或磺酸取代的铵基,其余的表示氢原子,磺酸铵基或磺酸取代的铵基。

    Abrasive grains classifying apparatus
    23.
    发明授权
    Abrasive grains classifying apparatus 有权
    磨粒分级装置

    公开(公告)号:US08733554B2

    公开(公告)日:2014-05-27

    申请号:US12749774

    申请日:2010-03-30

    IPC分类号: B07B13/00 B24B57/00 B07B1/14

    摘要: An abrasive grains classifying apparatus is used to classify abrasive grains based on their sizes that can be determined by distances between mutually opposed surfaces of the respective abrasive grains. The abrasive grains classifying apparatus is provided with: a first gap portion 35 which includes two rollers 24 and 32 disposed at a predetermined distance L2 from each other and also which classifies the abrasive grains 60 into first abrasive grains 60b and 60c capable of passing through between the rollers 24 and 32 and second abrasive grains 60a incapable of passing through between the two rollers 24 and 32; and a second gap portion 54 which includes two rollers 54 and 69 disposed at a distance L3 smaller than the distance L2 in the first gap portion 35 from each other.

    摘要翻译: 磨粒分级装置用于根据其各自的磨粒相互相对的表面之间的距离可确定的尺寸对磨粒进行分类。 磨粒分级装置设置有:第一间隙部分35,其包括彼此以预定距离L2设置的两个辊24和32,并且还将磨粒60分类成能够穿过第二磨粒60b和60c之间的第一磨粒60b和60c 辊24和32以及不能穿过两个辊24和32之间的第二磨料颗粒60a; 以及第二间隙部分54,其包括设置在比第一间隙部分35中的距离L2小的距离L3处的彼此相对的两个辊54和69。

    Cleaning liquid used in photolithography and a method for treating substrate therewith
    24.
    发明授权
    Cleaning liquid used in photolithography and a method for treating substrate therewith 有权
    用于光刻的清洗液及其处理方法

    公开(公告)号:US08685910B2

    公开(公告)日:2014-04-01

    申请号:US12845085

    申请日:2010-07-28

    IPC分类号: C11D7/50 C11D11/00

    摘要: It is disclosed a cleaning liquid for stripping and dissolving a photoresist pattern having a film thickness of 10-150 μm, which contains (a) 0.5-15 mass % of a quaternary ammonium hydroxide, such as tetrapropylammonium hydroxide and tetrabutylammonium hydroxide, (b) 65-97 mass % of a water-soluble organic solvent, such as dimethylsulfoxide or a mixed solvent thereof with N-methyl-2-pyrrolidone, sulforane, etc., and (c) 0.5-30 mass % of water, and a method for treating a substrate therewith.

    摘要翻译: 公开了一种用于剥离和溶解膜厚度为10-150μm的光致抗蚀剂图案的清洗液,其含有(a)0.5-15质量%的季铵氢氧化物,例如四丙基氢氧化铵和四丁基氢氧化铵,(b) 65-97质量%的水溶性有机溶剂,例如二甲基亚砜或其与N-甲基-2-吡咯烷酮,sulforane等的混合溶剂,和(c)0.5-30质量%的水,以及 用于处理基材。

    Photosensitive resin composition and pattern forming method using the same
    25.
    发明授权
    Photosensitive resin composition and pattern forming method using the same 有权
    感光树脂组合物和使用其的图案形成方法

    公开(公告)号:US08617795B2

    公开(公告)日:2013-12-31

    申请号:US12223913

    申请日:2007-02-15

    IPC分类号: G03F7/40 G03F7/004 G03F7/038

    摘要: Problem: Providing a photosensitive resin composition that has high sensitivity, sustains a slight shrinkage in volume when cured under heating and can form resist patterns having high-aspect profiles, and a pattern forming method using such a composition.Means for Resolution: A photosensitive resin composition characterized by containing (a) a polyfunctional epoxy resin, (b) a cationic polymerization initiator and (c) an aromatic polycyclic compound as a sensitizer (such as 2,3-dihydroxynaphthalene, 1,5-dihydroxynaphthalene or 2,6-dihydroxynaphthalene), which has at least two substituents capable of forming cross-links with component (a).

    摘要翻译: 问题:提供一种具有高灵敏度的感光性树脂组合物,在加热下固化时能够容易地体积收缩,并且可以形成具有高外形轮廓的抗蚀剂图案,以及使用这种组合物的图案形成方法。 解决方法:一种感光性树脂组合物,其特征在于,含有(a)多官能环氧树脂,(b)阳离子聚合引发剂和(c)作为敏化剂的芳香族多环化合物(如2,3-二羟基萘, 二羟基萘或2,6-二羟基萘),其具有至少两个能够与组分(a)形成交联的取代基。

    BORE WORKING TOOL
    26.
    发明申请
    BORE WORKING TOOL 有权
    钻孔工具

    公开(公告)号:US20120028550A1

    公开(公告)日:2012-02-02

    申请号:US13258127

    申请日:2010-03-31

    IPC分类号: B24B33/02 B24B33/08

    摘要: An arm 21 has a shape for grasping a part in a circumferential direction of a tool holder 7. The arm 21 is connected to the tool holder 7 with a bolt 23 inserted into a fixing hole 22 provided in a base side portion of the arm 21. A tapped hole 25 used for exchangeably attaching a cutting tool 24 is formed in a tip side portion of the arm 21. A groove part 26 extending in parallel to an axis of the tool holder 7 is formed in a position close to the base portion of the arm 21. Owing to the groove part 26, the arm 21 works as an elastic hinge when an external force is applied, so as to increase or decrease a radial dimension of the cutting tool 24 while keeping its parallelism to the axis of the tool.

    摘要翻译: 臂21具有用于抓握工具架7的圆周方向的一部分的形状。臂21通过插入到设置在臂21的基部侧的固定孔22中的螺栓23连接到工具夹具7 在臂21的前端部形成有用于可切换地安装切削工具24的螺纹孔25.平行于刀架7的轴线延伸的槽部26形成在靠近基部的位置 通过槽部26,当施加外力时,臂21作为弹性铰链起作用,以便增加或减小切削工具24的径向尺寸,同时保持其与轴线的平行度 工具。

    POLISHING APPARATUS
    28.
    发明申请
    POLISHING APPARATUS 有权
    抛光装置

    公开(公告)号:US20100273405A1

    公开(公告)日:2010-10-28

    申请号:US12747225

    申请日:2009-02-09

    IPC分类号: B24B7/20 B24B41/06 B24B55/02

    CPC分类号: B24B37/30

    摘要: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table (100) having a polishing surface (101a), a top ring body (2) configured to hold and press a substrate against the polishing surface (101a), and a retainer ring (3) provided at an outer peripheral portion of the top ring body (2) and configured to press the polishing surface (101a). A fulcrum for receiving a lateral force applied from the substrate to the retainer ring (3) during polishing of the substrate is located above a central portion of the substrate.

    摘要翻译: 抛光装置用于将半导体晶片等基板研磨成平面镜面。 抛光装置包括具有抛光面(101a)的抛光台(100),被配置为将基板保持并压靠在抛光表面(101a)上的顶环体(2),以及设置在抛光表面 所述顶环体(2)的外周部分构造成按压所述抛光表面(101a)。 用于在衬底抛光期间接收从衬底施加到保持环(3)的侧向力的支点位于衬底的中心部分的上方。

    Process for producing resist pattern and conductor pattern
    29.
    发明授权
    Process for producing resist pattern and conductor pattern 有权
    制造抗蚀剂图案和导体图案的方法

    公开(公告)号:US07754416B2

    公开(公告)日:2010-07-13

    申请号:US11720180

    申请日:2005-11-28

    IPC分类号: G03F7/26 G03F7/40

    摘要: This process for producing a resist pattern includes: the step of laminating (a) a support having an upper surface on which copper exists, (b) an inorganic substance layer consisting of an inorganic substance supplied from an inorganic substance source, and (c) a photoresist layer consisting of a chemically amplified type positive photoresist composition, to obtain a photoresist laminate, the step of selectively irradiating active light or radioactive rays to said photoresist laminate, and the step of developing said (c) photoresist layer together with said (b) inorganic substance layer to form a resist pattern.

    摘要翻译: 制造抗蚀剂图案的方法包括:(a)具有铜的上表面的载体的层叠步骤,(b)由无机物质源供给的无机物质构成的无机物质层,(c) 由化学放大型正性光致抗蚀剂组合物构成的光致抗蚀剂层,以获得光致抗蚀剂层压体,选择性地向所述光致抗蚀剂层压体照射活性光或放射线的步骤,以及将所述(c)光致抗蚀剂层与所述(b )无机物质层以形成抗蚀剂图案。