摘要:
A negative thick film photoresist composition with improved alkali developability is provided. The composition comprises: (A) a resin component containing (a) from 61 to 90% by weight of a structural unit derived from a cyclic alkyl (meth)acrylate ester, and (b) a structural unit derived from a radical polymerizable compound containing a hydroxyl group, (B) a polymerizable compound containing at least one ethylenic unsaturated double bond, (C) a photopolymerization initiator, and (D) an organic solvent.
摘要:
To provide a developer composition for resists, capable of improving dimensional controllability of a resist pattern. The developer composition for resists comprises an organic quaternary ammonium base as a main component, said developer composition further comprising an anionic surfactant represented by the following general formula (I), and SO42−, the content of S42− being from 0.01 to 1% by mass. In the formula, at least one of R1 and R2 represents an alkyl or alkoxy group having 5 to 18 carbon atoms and the other one represents a hydrogen atom, or an alkyl or alkoxy group having 5 to 18 carbon atoms, and at least one of R3, R4 and R5 represents an ammonium sulfonate group or a sulfonic acid-substituted ammonium group and the others represent a hydrogen atom, an ammonium sulfonate group or a sulfonic acid-substituted ammonium group.
摘要:
An abrasive grains classifying apparatus is used to classify abrasive grains based on their sizes that can be determined by distances between mutually opposed surfaces of the respective abrasive grains. The abrasive grains classifying apparatus is provided with: a first gap portion 35 which includes two rollers 24 and 32 disposed at a predetermined distance L2 from each other and also which classifies the abrasive grains 60 into first abrasive grains 60b and 60c capable of passing through between the rollers 24 and 32 and second abrasive grains 60a incapable of passing through between the two rollers 24 and 32; and a second gap portion 54 which includes two rollers 54 and 69 disposed at a distance L3 smaller than the distance L2 in the first gap portion 35 from each other.
摘要:
It is disclosed a cleaning liquid for stripping and dissolving a photoresist pattern having a film thickness of 10-150 μm, which contains (a) 0.5-15 mass % of a quaternary ammonium hydroxide, such as tetrapropylammonium hydroxide and tetrabutylammonium hydroxide, (b) 65-97 mass % of a water-soluble organic solvent, such as dimethylsulfoxide or a mixed solvent thereof with N-methyl-2-pyrrolidone, sulforane, etc., and (c) 0.5-30 mass % of water, and a method for treating a substrate therewith.
摘要:
Problem: Providing a photosensitive resin composition that has high sensitivity, sustains a slight shrinkage in volume when cured under heating and can form resist patterns having high-aspect profiles, and a pattern forming method using such a composition.Means for Resolution: A photosensitive resin composition characterized by containing (a) a polyfunctional epoxy resin, (b) a cationic polymerization initiator and (c) an aromatic polycyclic compound as a sensitizer (such as 2,3-dihydroxynaphthalene, 1,5-dihydroxynaphthalene or 2,6-dihydroxynaphthalene), which has at least two substituents capable of forming cross-links with component (a).
摘要:
An arm 21 has a shape for grasping a part in a circumferential direction of a tool holder 7. The arm 21 is connected to the tool holder 7 with a bolt 23 inserted into a fixing hole 22 provided in a base side portion of the arm 21. A tapped hole 25 used for exchangeably attaching a cutting tool 24 is formed in a tip side portion of the arm 21. A groove part 26 extending in parallel to an axis of the tool holder 7 is formed in a position close to the base portion of the arm 21. Owing to the groove part 26, the arm 21 works as an elastic hinge when an external force is applied, so as to increase or decrease a radial dimension of the cutting tool 24 while keeping its parallelism to the axis of the tool.
摘要:
An electronic device is disclosed that includes an operations unit disposed in a device main body for input operations, and a camera unit including a camera for image capturing and a light source that emits light for image capturing. A light irradiation position of the light source is variable so that the light source illuminates the operations unit.
摘要:
A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table (100) having a polishing surface (101a), a top ring body (2) configured to hold and press a substrate against the polishing surface (101a), and a retainer ring (3) provided at an outer peripheral portion of the top ring body (2) and configured to press the polishing surface (101a). A fulcrum for receiving a lateral force applied from the substrate to the retainer ring (3) during polishing of the substrate is located above a central portion of the substrate.
摘要:
This process for producing a resist pattern includes: the step of laminating (a) a support having an upper surface on which copper exists, (b) an inorganic substance layer consisting of an inorganic substance supplied from an inorganic substance source, and (c) a photoresist layer consisting of a chemically amplified type positive photoresist composition, to obtain a photoresist laminate, the step of selectively irradiating active light or radioactive rays to said photoresist laminate, and the step of developing said (c) photoresist layer together with said (b) inorganic substance layer to form a resist pattern.
摘要:
The present invention provides a lubricating oil composition comprising a mixture of both a poly-alpha-olefin and an ester compound, the lubricating oil composition having an SAE viscosity grade of 75 W-85, satisfying GL-5 in terms of API gear oil designation and having a viscosity index of 160 or more. The above mixture of the poly-alpha-olefin and ester compound is preferably contained in an amount of from 75 to 90 wt % with reference to the total amount of the lubricating oil composition. The poly-alpha-olefin is preferably a mixture of a poly-alpha-olefin having low viscosity of from about 3 to 6 mm2/s at 100° C. and a poly-alpha-olefin having high viscosity of from about 35 to 45 mm2/s at 100° C.