摘要:
The present invention relates to a preparation method of a tungsten carbide sintered body for a friction stir welding tool used in a friction stir welding tool of a high melting point material such as steel, titanium and the like or a dissimilar material such as aluminum, magnesium-steel, titanium and the like. The preparation method comprises the following steps: filling a tungsten carbide (WC) powder in a mold made of a graphite material; mounting the mold filled with tungsten carbide powder in a chamber of a discharge plasma sintering apparatus; making a vacuum inside of the chamber; molding the tungsten carbide powder while maintaining a constant pressure inside the mold and increasing the temperature according to a set heat increase pattern until the temperature reaches a final target temperature; and cooling the inside of the chamber while maintaining the pressure pressurized in the mold after the molding step.
摘要:
Disclosed is a crosslinked polymer nanoparticle containing composition, a method for preparing a copolymer using the composition, and a vinyl chloride resin with improved foam molding properties. Processing aid in according with the present invention, provides the effects of improved foam molding properties and processibility of a vinyl chloride resin, during a foam molding process upon being added to the vinyl chloride resin.
摘要:
A nonvolatile memory device includes an array of resistive memory cells and a write driver, which is configured to drive a selected bit line in the array with a reset current pulse, which is responsive to a first external voltage input through a first terminal/pad of the memory device during a memory cell reset operation. The write driver is further configured to drive the selected bit line in sequence with a first set current pulse, which is responsive to the first external voltage, and a second set current pulse, which is responsive to a second external voltage input through a second terminal/pad of the memory device during a memory cell set operation.
摘要:
A nonvolatile memory device comprises a one-time-programmable (OTP) lock bit register. The nonvolatile memory device comprises a variable-resistance memory cell array comprising an OTP block that store data and a register that stores OTP lock state information indicating whether the data is changeable. The register comprises a variable memory cell. An initial value of the OTP lock state information is set to a program protection state.
摘要:
A nonvolatile memory device includes an array of resistive memory cells and a write driver, which is configured to drive a selected bit line in the array with a reset current pulse, which is responsive to a first external voltage input through a first terminal/pad of the memory device during a memory cell reset operation. The write driver is further configured to drive the selected bit line in sequence with a first set current pulse, which is responsive to the first external voltage, and a second set current pulse, which is responsive to a second external voltage input through a second terminal/pad of the memory device during a memory cell set operation.
摘要:
A hollow fiber membrane module is disclosed, which is capable of preventing a bundle of hollow fiber membranes from being separated from a module case, the hollow fiber membrane module for accommodating a bundle of hollow fiber membranes closely held together through the use of potting agent, including a module case including: a first inner surface serving as a projection on which the bundle of hollow fiber membranes is stably placed; a second inner surface upwardly extending from one end of the first inner surface, the second inner surface including at least one separation-preventing groove to prevent the bundle of hollow fiber membranes from being separated from the module case; a third inner surface downwardly extending from the other end of the first inner surface; and a fourth inner surface connected to the third inner surface.
摘要:
Disclosed is a submerged hollow fiber membrane module which is easy to expand, has a small installation area, and exhibits excellent contamination prevention and durability. The submerged hollow fiber membrane module comprises: (I) a module body divided into two portions which has a permeated water collection space (5) and a permeated water outlet (3); (II) module support tubes (17) which are vertically connected to the upper and lower ends of the module body; (III) a plate type module header insertion layer which is provided with hollow fiber membrane spaces (10), and is inserted into the module body; (IV) a plate type diffusion layer which is provided with a diffusion port (4) and diffusion tubes (11) and is inserted into the module body subsequent to the module header insertion layer; and (V) module headers which are inserted into the module header insertion layer.
摘要:
An input receiver capable of sensing and amplifying an external signal having a very small swing input signal. The input receiver comprises a clock sampled amplifier for receiving a clock signal and a reference signal, respectively, in response to a first state of a clock signal and a delayed sampling clock signal, and for amplifying and sampling the voltage difference between the external signal and the reference signal, respectively, in response to a transition of the clock and delayed sampling clock signals to a second state; and a pulse generator for pre-charging a power source voltage and selectively pulling down the pre-charged signals to produce a pulse signal, in response to the second state of the delayed sampling clock signal and outputs of the clock sampled amplifier.
摘要:
Disclosed is a crosslinked polymer nanoparticle containing composition, a method for preparing a copolymer using the composition, and a vinyl chloride resin with improved foam molding properties. Processing aid in according with the present invention, provides the effects of improved foam molding properties and processibility of a vinyl chloride resin, during a foam molding process upon being added to the vinyl chloride resin.
摘要:
One embodiment includes a non-volatile memory cell array, and a read unit configured to disable read operation for the non-volatile memory cell array for a time period following writing of data in the non-volatile memory cell array.