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    Resin used for magnetic recording media and a method for the production of the same
    22.
    发明授权
    Resin used for magnetic recording media and a method for the production of the same 失效
    用于磁记录介质的树脂及其制造方法

    公开(公告)号：US4996272A

    公开(公告)日：1991-02-26

    申请号：US371400

    申请日：1989-06-26

    Applicant: Takeshi Nakachi ,  Akio Hata ,  Yoshihisa Watanabe

    Inventor： Takeshi Nakachi ,  Akio Hata ,  Yoshihisa Watanabe

    IPC: C08F2/06 ,  G11B5/702

    CPC classification number: G11B5/7023 ,  Y10S428/90 ,  Y10T428/31797

    Abstract: A resin used for magnetic recording media, comprising a vinyl chloride copolymer containing vinyl monomers with hydroxyl groups and vinyl monomers with quaternary ammonium salt groups as component units. The resin is made by a method which comprises polymerizing an organic solvent solution containing vinyl chloride, vinyl monomers with hydroxyl groups and vinyl monomers with quaternary ammonium salt groups in a reacting apparatus to thereby precipitate a vinyl chloride copolymer, the interior surface of said reacting apparatus, which comes into contact with said organic solvent solution being coated with a fluororesin.

    Abstract translation: 用于磁记录介质的树脂，其包含含有具有羟基的乙烯基单体的氯乙烯共聚物和具有季铵盐基团的乙烯基单体作为组分单元。 该树脂通过包括在反应设备中聚合含有氯乙烯的有机溶剂溶液，具有羟基的乙烯基单体和乙烯基单体与季铵盐基团以使氯乙烯共聚物沉淀出来的方法制成，所述反应设备的内表面 其与所述涂覆有氟树脂的有机溶剂溶液接触。

    Process for producing olefin polymers
    25.
    发明授权
    Process for producing olefin polymers 失效
    生产烯烃聚合物的方法

    公开(公告)号：US4237254A

    公开(公告)日：1980-12-02

    申请号：US899999

    申请日：1978-04-25

    Applicant: Sadao Kitagawa ,  Isao Okada ,  Teruo Saito ,  Shoichi Masukawa ,  Yoshihisa Watanabe ,  Makoto Imanari

    Inventor： Sadao Kitagawa ,  Isao Okada ,  Teruo Saito ,  Shoichi Masukawa ,  Yoshihisa Watanabe ,  Makoto Imanari

    IPC: C08F10/00 ,  C08F4/02 ,  C08F10/06

    CPC classification number: C08F10/00 ,  Y10S526/902 ,  Y10S526/906

    Abstract: A process for producing olefin polymers comprising contacting an ethylenically unsaturated monomer comprising at least one olefin monomer with a catalyst system comprising a combination of a catalyst component I and a catalyst component II as described hereunder:Catalyst component IA solid product obtained by contacting the following constituents (a), (b) and (c) or (a), (b), (c) and (d) together:(a) A solid reaction product of a magnesium compound containing a hydroxyl group attached to magnesium and an organoaluminum compound represented by the formula R.sub.n AlX.sub.3-n wherein R represents a hydrocarbon residue having from 1 to 20 carbon atoms, X represents a halogen atom and n represents a number of greater than zero but not greater than 1.5, i.e. 0

    Abstract translation: 一种制备烯烃聚合物的方法，包括使包含至少一种烯烃单体的烯属不饱和单体与包含催化剂组分I和催化剂组分II的组合的催化剂体系接触，如下所述：催化剂组分IA固体产物通过使下列组分 （a），（b）和（c）或（a），（b），（c）和（d））：（a）含有与镁结合的羟基的镁化合物与有机铝 由式RnAlX3-n表示的化合物，其中R表示具有1至20个碳原子的烃基，X表示卤素原子，n表示大于零但不大于1.5的数，即0

    Semiconductor memory write method
    28.
    发明授权
    Semiconductor memory write method 失效
    半导体存储器写入方式

    公开(公告)号：US08243512B2

    公开(公告)日：2012-08-14

    申请号：US12621913

    申请日：2009-11-19

    Applicant: Yoshihisa Watanabe

    Inventor： Yoshihisa Watanabe

    IPC: G11C16/04 ,  G11C7/10 ,  G11C7/00

    CPC classification number: G11C16/3454 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/3459 ,  G11C2211/5621

    Abstract: A semiconductor memory write method which, when writing data at a threshold voltage level in a memory cell, is configured to perform two write operations including a preliminary data write operation of writing temporary data at a threshold voltage level lower than that of the data at the threshold voltage level, and a final data write operation of additionally writing final data at the threshold voltage level, includes making at least one of a write time of the preliminary data write operation, a word-line waiting time of verify read, and a bit-line waiting time of verify read, shorter than that of the final data write operation.

    Abstract translation: 一种半导体存储器写入方法，当在存储器单元中以阈值电压电平写入数据时，被配置为执行两个写入操作，所述写入操作包括以比在该存储器单元的数据的阈值电压电平低的阈值电压写入临时数据的初步数据写入操作 以及在阈值电压电平附加地写入最终数据的最终数据写入操作包括进行初步数据写入操作的写入时间，验证读取的字线等待时间和位的至少一个 线路等待时间验证读取，比最终数据写入操作更短。

    SEMICONDUCTOR MEMORY DEVICE INCLUDING STACKED GATE INCLUDING CHARGE ACCUMULATION LAYER AND CONTROL GATE
    30.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE INCLUDING STACKED GATE INCLUDING CHARGE ACCUMULATION LAYER AND CONTROL GATE 审中-公开
    包括堆积门的半导体存储器件，包括充电累积层和控制栅

    公开(公告)号：US20100232229A1

    公开(公告)日：2010-09-16

    申请号：US12722052

    申请日：2010-03-11

    Applicant: Takeshi OGAWA ,  Yoshihisa Watanabe

    Inventor： Takeshi OGAWA ,  Yoshihisa Watanabe

    IPC: G11C16/06

    CPC classification number: G11C16/26 ,  G11C16/06 ,  G11C16/32 ,  G11C16/3418

    Abstract: A semiconductor memory device includes a memory cell, a bit line, a source line, a source line driver, a sense amplifier, a counter, a detector, a controller. The sense amplifier reads the data by sensing current flowing through the bit line. The counter counts ON memory cells and/or OFF memory cells. The detector detects whether the voltage of the source line has exceeded a reference voltage. The controller controls the number of times of data sensing by the sense amplifier in accordance with the detection result in the detector, and controls a driving force of the source line driver in accordance with the count in the counter.

    Abstract translation: 半导体存储器件包括存储单元，位线，源极线，源极线驱动器，读出放大器，计数器，检测器，控制器。 感测放大器通过检测流过位线的电流来读取数据。 计数器计数ON存储单元和/或OFF存储单元。 检测器检测源极线路的电压是否超过参考电压。 控制器根据检测器中的检测结果控制读出放大器的数据检测次数，并根据计数器中的计数来控制源极线驱动器的驱动力。

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