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28 条记录 (耗时 0.074 秒)

    Needle Plate for Double-Needle Sewing Machine
    21.
    发明申请
    Needle Plate for Double-Needle Sewing Machine 失效
    双针缝纫机针板

    公开(公告)号：US20070095264A1

    公开(公告)日：2007-05-03

    申请号：US11553183

    申请日：2006-10-26

    申请人： Hyun Sung Kim

    发明人： Hyun Sung Kim

    IPC分类号： D05B75/00

    CPC分类号： D05B73/12

    摘要： Disclosed is a needle plate for a double-needle sewing machine. The needle plate includes a partition extending downward between the needle holes and provided with a thin plate insertion slit in an intermediate portion thereof, and a thin plate inserted into the thin plate insertion slit. Thus, the rigidity of a thin wall formed between the needle holes is reinforced by providing the partition and the thin plate inserted into the partition between the needle holes, so that stitches can be formed in parallel without breakage of the needle plate even when the interval between the needle holes is less than 2 mm.

    摘要翻译： 公开了一种双针缝纫机的针板。 针板包括在针孔之间向下延伸的隔板，并在其中间部分设置有薄板插入狭缝，以及插入薄板插入狭缝中的薄板。 因此，通过设置插入到针孔之间的隔板中的隔板和薄板来增强在针孔之间形成的薄壁的刚性，使得即使间隔时间也可以平行地形成线圈而不破坏针板 针孔之间小于2mm。

    Bowl-shaped structure, method for manufacturing same, and bowl array
    23.
    发明授权
    Bowl-shaped structure, method for manufacturing same, and bowl array 有权

    公开(公告)号：US09956740B2

    公开(公告)日：2018-05-01

    申请号：US14111468

    申请日：2012-04-10

    申请人： Kyung Byung Yoon ,  Hyun Sung Kim

    发明人： Kyung Byung Yoon ,  Hyun Sung Kim

    IPC分类号： C23C14/22 ,  B32B3/30 ,  B81C1/00 ,  C23C14/08

    CPC分类号： B32B3/30 ,  B81C1/00103 ,  B81C1/00373 ,  C23C14/083 ,  C23C14/22 ,  Y10T428/13

    摘要： The present invention provides a method for manufacturing a bowl-shaped structure, a bowl-shaped structure manufactured thereby, and a bowl array using the bowl-shaped structure, wherein the method for manufacturing the bowl-shaped structure comprises the following steps: putting into contact a first substrate, on which a particle alignment layer is formed, and a second substrate so as to transfer the particle alignment layer to the second substrate; forming a particle-thin film complex by coating the particle alignment layer that is transferred on the second substrate with a thin film formation substance; removing a portion of the thin film formation substance from the complex to expose particles, and then removing the exposed particles to form a template having a hole; and forming the bowl-shaped structure by coating a first substance on the surface of the hole of the template and then removing the template.

    SYNTHETIC GEL FOR CRYSTAL GROWTH INDUCING ONLY SECONDARY GROWTH FROM SURFACE OF SILICALITE-1 OR ZEOLITE BETA SEED CRYSTAL
    25.
    发明申请
    SYNTHETIC GEL FOR CRYSTAL GROWTH INDUCING ONLY SECONDARY GROWTH FROM SURFACE OF SILICALITE-1 OR ZEOLITE BETA SEED CRYSTAL 有权
    用于晶体生长的合成凝胶仅在硅酸盐-1或沸石BET表面晶体的表面仅产生二次生长

    公开(公告)号：US20150147268A1

    公开(公告)日：2015-05-28

    申请号：US14408144

    申请日：2012-06-15

    申请人： Kyung Byung Yoon ,  Cao Thanh Tung Pham ,  Hyun Sung Kim

    发明人： Kyung Byung Yoon ,  Cao Thanh Tung Pham ,  Hyun Sung Kim

    IPC分类号： C01B39/48

    CPC分类号： C01B39/48

    摘要： A synthetic gel for crystal growth, which induces only secondary growth from the surface of a silicalite-1 or zeolite beta seed crystal and cannot induce crystal nucleation in the synthetic gel for crystal growth or on the surface of the seed crystal. The synthetic gel contains fumed silica, tetraethylammonium hydroxide (TEAOH), [(NH4)2SiF6], KOH, and H2O, or contains tetraethylorthosilicate (TEOS), tetraethylammonium hydroxide (TEAOH), hydrogen fluoride, and H2O.

    摘要翻译： 用于晶体生长的合成凝胶，其仅从硅沸石-1或沸石β晶种的表面仅诱导二次生长，并且不能在用于晶体生长的合成凝胶中或晶种表面上诱导晶体成核。 合成凝胶含有热解二氧化硅，四乙基氢氧化铵（TEAOH），[（NH4）2SiF6]，KOH和H2O，或含有原硅酸四乙酯（TEOS），四乙基氢氧化铵（TEAOH），氟化氢和H 2 O.

    METHOD FOR JOINING SECOND-GENERATION HIGH-TEMPERATURE SUPERCONDUCTING WIRES BY MELTING DIFFUSION
    28.
    发明申请
    METHOD FOR JOINING SECOND-GENERATION HIGH-TEMPERATURE SUPERCONDUCTING WIRES BY MELTING DIFFUSION 审中-公开
    通过熔化扩散接合第二代高温超导线的方法

    公开(公告)号：US20100210468A1

    公开(公告)日：2010-08-19

    申请号：US12600282

    申请日：2009-08-04

    申请人： Haigun Lee ,  Jung-bing Song ,  Hyun Sung Kim ,  Na-young Kwon

    发明人： Haigun Lee ,  Jung-bing Song ,  Hyun Sung Kim ,  Na-young Kwon

    IPC分类号： H01L39/24

    CPC分类号： H01L39/02

    摘要： Provided is a method for joining two strands of second-generation high-temperature superconducting wire, each of which includes a substrate, a buffer layer, a superconducting layer and a stabilizer layer. The method comprises: partially removing each of the stabilizer layers to expose a portion of the superconducting layer; bringing the exposed portions of the superconducting layers into contact with each other and fixing the superconducting layers to each other; heating the strands of superconducting wire to the melting point of the superconducting layers to melt-diffuse the superconducting layers in contact with each other and to join the strands of superconducting wire together; and oxidizing the junction between the strands of superconducting wire in an oxygen atmosphere (‘oxygenation annealing’). The oxygenation annealing restores the superconducting properties of the superconducting wires lost during the melting diffusion. According to the method, the superconducting layers are brought into direct contact with each other without any mediating material therebetween, followed by melting diffusion. Accordingly, the method enables the fabrication of sufficiently long superconducting wires without any substantial contact resistance, compared to non-superconducting joining. Particularly, the oxygen partial pressure is adjusted to a pressure close to a vacuum during the melting diffusion to lower the eutectic melting point of the superconductors, so that the superconducting wires can be joined together while protecting the constituent layers (e.g., the stabilizer layers containing silver (Ag)) from melting.

    摘要翻译： 提供了一种用于连接第二代高温超导线的两股的方法，每条第二代高温超导线包括衬底，缓冲层，超导层和稳定层。 该方法包括：部分地去除每个稳定层以暴露一部分超导层; 使超导层的暴露部分彼此接触并将超导层彼此固定; 将超导线材的线材加热到超导层的熔点，以使超导层彼此接触地熔融扩散，并将超导线材的线束连接在一起; 并在氧气氛中氧化超导线束之间的接合点（“氧化退火”）。 氧合退火恢复了在熔化扩散期间损失的超导线的超导特性。 根据该方法，使超导体彼此直接接触，而在其间没有介质，随后熔融扩散。 因此，与非超导接合相比，该方法能够制造足够长的超导线，而没有任何显着的接触电阻。 特别地，在熔融扩散期间将氧分压调节至接近真空的压力，以降低超导体的共晶熔点，使得超导线可以在保护构成层的同时被接合在一起（例如，含有 银（Ag））熔化。