公开(公告)号：US07732123B2

公开(公告)日：2010-06-08

申请号：US10995653

申请日：2004-11-23

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/2041 ,  G03F7/168 ,  H01L21/67051 ,  H01L21/67057

Abstract: A method comprises forming a photoresist on a substrate, rinsing the photoresist using a rinse liquid agitated with at least one megasonic source, exposing the photoresist to radiation while immersed in a liquid, and developing the photoresist.

Abstract translation: 一种方法包括在基底上形成光致抗蚀剂，使用用至少一个兆声源驱动的漂洗液冲洗光致抗蚀剂，在浸入液体中时将光致抗蚀剂暴露于辐射，并显影光致抗蚀剂。

公开(公告)号：US07579121B2

公开(公告)日：2009-08-25

申请号：US11245522

申请日：2005-10-07

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F1/00 ,  G03F1/14

CPC classification number: G03F1/36

Abstract: An optical proximity correction photomask comprises a transparent substrate, a main feature having a first transmitivity disposed on the transparent substrate and at least one assist feature having a second transmitivity disposed to each side of the main feature and on the transparent substrate, wherein the first transmitivity is not equal to the second transmitivity.

Abstract translation: 光学邻近校正光掩模包括透明基板，具有设置在透明基板上的第一透射率的主要特征以及设置在主要特征的每一侧和透明基板上的具有第二透射性的至少一个辅助特征，其中第一透射率 不等于第二个传输性。

公开(公告)号：US07566525B2

公开(公告)日：2009-07-28

申请号：US11152559

申请日：2005-06-14

Applicant: Chin-Hsiang Lin ,  Ching-Yu Chang

Inventor： Chin-Hsiang Lin ,  Ching-Yu Chang

IPC: G03F1/00 ,  H01L21/00

CPC classification number: G03F7/405

Abstract: A method is disclosed for forming a photoresist pattern with enhanced etch resistance on a semiconductor substrate. A photoresist pattern is first formed on the substrate. A silicon-containing polymer layer is deposited over the photoresist pattern on the substrate. A thermal treatment is performed to form a cross-linked anti-etch shielding layer between the photoresist pattern and the silicon-containing layer. Then, the remaining silicon containing layer is removed. A plasma treatment is performed in order to increase an etch resistance of the cross-linked anti-etch shielding layer and the photoresist pattern.

Abstract translation: 公开了用于在半导体衬底上形成具有增强的耐蚀刻性的光致抗蚀剂图案的方法。 首先在基板上形成光致抗蚀剂图案。 在基板上的光致抗蚀剂图案上沉积含硅聚合物层。 进行热处理以在光致抗蚀剂图案和含硅层之间形成交联的抗蚀刻屏蔽层。 然后，除去剩余的含硅层。 执行等离子体处理以增加交联的抗蚀刻屏蔽层和光刻胶图案的耐蚀刻性。

公开(公告)号：US20080158451A1

公开(公告)日：2008-07-03

申请号：US12004180

申请日：2007-12-20

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G02F1/13363 ,  G02F1/1333

CPC classification number: G02F1/1393 ,  G02F1/13363 ,  G02F1/133707 ,  G02F2001/133638 ,  G02F2413/04 ,  G02F2413/06

Abstract: Systems for displaying images are provided. A representative system comprises a dual domain electrical compensated birefringence liquid crystal display (ECB-LCD) panel. A pair of uniaxial 1/4λ compensation films is separately disposed on both outer surfaces of the dual domain ECB-LCD panel. A pair of uniaxial 1/2λ compensation films is separately disposed on outer surfaces of the pair of uniaxial 1/4λ compensation films. A pair of polarizers is separately disposed on both outer surfaces of the pair of the uniaxial 1/2λ optical compensation films.

Abstract translation: 提供显示图像的系统。 代表性的系统包括双域电补偿双折射液晶显示器（ECB-LCD）面板。 一对单轴1 /4λ补偿膜分别设置在双域ECB-LCD面板的两个外表面上。 一对单轴1 /2λ补偿膜分别设置在该对单轴1/4波导补偿膜的外表面上。 一对偏振器分别设置在该对单轴1/2波长光学补偿膜的两个外表面上。

公开(公告)号：US20070254244A1

公开(公告)日：2007-11-01

申请号：US11416264

申请日：2006-05-01

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/0035 ,  G03F7/095 ,  G03F7/0955 ,  G03F7/38

Abstract: The present invention includes a method of forming a resist structure comprising depositing a first photoresist material over a first layer. Selectively exposing portions of the first layer to light to provide exposed portions and unexposed portions in the first photoresist layer. Without developing the first photoresist layer, depositing a second photoresist layer over the first photoresist layer including both exposed portions and unexposed portions. The second photoresist layer being capable of crosslinking in the presence of an acid. Treating the first photoresist layer to cause an acid from only one of the exposed portions or unexposed portions of the first photoresist layer producing a plurality of crosslinked portions of the second photoresist layer. Thereafter, developing the second photoresist layer to remove uncrosslinked portions.

Abstract translation: 本发明包括形成抗蚀剂结构的方法，包括在第一层上沉积第一光致抗蚀剂材料。 将第一层的部分选择性地曝光以在第一光致抗蚀剂层中提供暴露部分和未曝光部分。 在不显影第一光致抗蚀剂层的情况下，在包括两个曝光部分和未曝光部分的第一光刻胶层上沉积第二光致抗蚀剂层。 第二光致抗蚀剂层能够在酸的存在下交联。 处理第一光致抗蚀剂层以仅产生来自第一光致抗蚀剂层的暴露部分中的一个或未曝光部分的酸，产生第二光致抗蚀剂层的多个交联部分。 此后，显影第二光致抗蚀剂层以去除未交联的部分。

公开(公告)号：US20070093067A1

公开(公告)日：2007-04-26

申请号：US11256711

申请日：2005-10-24

Applicant: Ching-Yu Chang ,  Burn Lin

Inventor： Ching-Yu Chang ,  Burn Lin

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/67046 ,  H01L21/67051 ,  H01L21/6708

Abstract: A method of processing a semiconductor wafer can be used prior to an immersion lithography process. The method includes providing a layer of organic photoresist onto a surface of the semiconductor wafer and removing a portion of the photoresist from an outer edge of the wafer using an edge-bead removal process. The outer edge of the wafer is then cleaned using one or more processes, including a mechanical scrubber/cleaner, mega-sonic power, de-ionized water and/or chemical solution.

Abstract translation: 在浸没光刻工艺之前可以使用半导体晶片的处理方法。 该方法包括在半导体晶片的表面上提供一层有机光致抗蚀剂，并使用边缘珠去除工艺从晶片的外边缘去除一部分光致抗蚀剂。 然后使用一个或多个工艺（包括机械洗涤器/清洁器，超声功率，去离子水和/或化学溶液）清洁晶片的外边缘。

公开(公告)号：US20070069399A1

公开(公告)日：2007-03-29

申请号：US11309166

申请日：2006-07-05

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: An overlay mark is provided. A first material layer is formed on a substrate, and then a first trench serving as a trench type outer mark is formed in the first material layer. The first trench is partially filled with the first deposition layer. A second material is formed over the first trench and the first deposition layer. A second trench is formed exposing the first deposition layer within the first trench. The second trench is partially filled with a second deposition layer forming a third trench. A third material layer is formed on the substrate to cover the second deposition layer and the second material layer. A step height is formed on the third deposition layer between the edge of the first trench and the center of the first trench. A raised feature serving as an inner mark is formed on the third deposition layer.

Abstract translation: 提供重叠标记。 在基板上形成第一材料层，然后在第一材料层中形成用作沟槽型外标的第一沟槽。 第一沟槽部分地填充有第一沉积层。 在第一沟槽和第一沉积层上形成第二材料。 形成第二沟槽，使第一沉积层暴露在第一沟槽内。 第二沟槽部分地填充有形成第三沟槽的第二沉积层。 在基板上形成第三材料层以覆盖第二沉积层和第二材料层。 在第一沉积层的边缘和第一沟槽的中心之间的第三沉积层上形成台阶高度。 在第三沉积层上形成用作内标的凸起特征。

公开(公告)号：US20070003879A1

公开(公告)日：2007-01-04

申请号：US11337986

申请日：2006-01-24

Applicant: Ching-Yu Chang ,  C.C. Ke ,  Vincent Yu

Inventor： Ching-Yu Chang ,  C.C. Ke ,  Vincent Yu

IPC: G03F7/26

CPC classification number: G03F7/2041 ,  G03F7/162 ,  G03F7/168 ,  G03F7/70341 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6715

Abstract: A method of performing immersion lithography on a semiconductor wafer is provided. The method includes providing a layer of resist onto a surface of the semiconductor wafer. Next, an edge-bead removal process spins the wafer at a speed greater than 1000 revolutions per minute and dispenses solvent through a nozzle while the wafer is spinning. Then, the resist layer is exposed using an immersion lithography exposure system.

Abstract translation: 提供了在半导体晶片上进行浸渍光刻的方法。 该方法包括在半导体晶片的表面上提供一层抗蚀剂。 接下来，边缘珠去除过程以大于1000转/分钟的速度旋转晶片，并且在晶片旋转时通过喷嘴分配溶剂。 然后，使用浸没式光刻曝光系统曝光抗蚀剂层。

公开(公告)号：US20060141399A1

公开(公告)日：2006-06-29

申请号：US11025538

申请日：2004-12-29

Applicant: Ching-Yu Chang ,  Burn Lin ,  Chi-Wen Liu

Inventor： Ching-Yu Chang ,  Burn Lin ,  Chi-Wen Liu

IPC: G03F7/00

CPC classification number: G03F7/322

Abstract: A method of creating a resist image on a semiconductor substrate includes exposing a layer of photoresist on the semiconductor substrate and developing the exposed layer of photoresist using a first fluid including supercritical carbon dioxide and a base such as Tetra-Methyl Ammonium Hydroxide (TMAH). Additionally, the developed photoresist can be cleaned using a second fluid including supercritical carbon dioxide and a solvent such as methanol, ethanol, isopropanol, and xylene.

公开(公告)号：US20060115774A1

公开(公告)日：2006-06-01

申请号：US10999625

申请日：2004-11-30

Applicant: Yu-Hsi Wang ,  Shi-Che Wang ,  Hua-Tal Lin ,  Shang Ho Lin ,  Ching-Yu Chang ,  Chin-Hsiang Lin

Inventor： Yu-Hsi Wang ,  Shi-Che Wang ,  Hua-Tal Lin ,  Shang Ho Lin ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/00

CPC classification number: G03F7/405 ,  H01L21/02057

Abstract: A novel method for eliminating or reducing the accumulation of electrostatic charges on semiconductor wafers during spin-rinse-drying of the wafers is disclosed. The method includes rinsing a wafer; applying an ionic solution to the wafer; and spin-drying the wafer. During the spin-drying step, the ionic solution neutralizes electrostatic charges on the wafer as the wafer is rotated. This reduces the formation of defects in devices fabricated on the wafer, as well as prevents or reduces electrostatic interference with processing equipment during photolithographic and other fabrication processes.

Abstract translation: 公开了一种用于在晶片的旋转冲洗干燥期间消除或减少半导体晶片上的静电电荷累积的新颖方法。 该方法包括冲洗晶片; 将离子溶液施加到晶片上; 并旋转晶片。 在旋转干燥步骤期间，当晶片旋转时，离子溶液中和晶片上的静电电荷。 这减少了在晶片上制造的器件中的缺陷的形成，以及在光刻和其它制造工艺期间防止或减少与处理设备的静电干扰。