公开(公告)号：US20070085034A1

公开(公告)日：2007-04-19

申请号：US11251330

申请日：2005-10-14

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin ,  David Lu

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin ,  David Lu

IPC: G03F7/20

CPC classification number: G03F7/2041 ,  G03F7/70341 ,  G03F7/70941

Abstract: A method for immersion lithography includes providing a substrate coated with an imaging layer, dispensing a conductive immersion fluid between the substrate and an imaging lens of a lithography system, and performing an exposure process to the imaging layer using a radiation energy through the conductive immersion fluid.

Abstract translation: 一种用于浸没式光刻的方法包括提供涂覆有成像层的基底，在基底和光刻系统的成像透镜之间分配导电浸渍流体，以及使用辐射能量通过导电浸渍流体对成像层进行曝光处理 。

公开(公告)号：US20070004182A1

公开(公告)日：2007-01-04

申请号：US11280162

申请日：2005-11-16

Applicant: Ching-Yu Chang ,  Burn Lin

Inventor： Ching-Yu Chang ,  Burn Lin

IPC: H01L21/20 ,  H01L21/36

CPC classification number: G03F7/70925 ,  G03F7/70341 ,  G03F7/70916

Abstract: An immersion lithography system includes an immersion fluid holder for containing an immersion fluid. The system further includes a stage for positioning a resist-coated semiconductor wafer in the immersion fluid holder and a lens proximate to the immersion fluid holder and positionable for projecting an image through the immersion fluid and onto the resist-coated semiconductor wafer. The immersion fluid holder includes a coating configured to reduce contaminate adhesion from contaminates in the immersion fluid.

Abstract translation: 浸没式光刻系统包括用于容纳浸液的浸液流体保持器。 该系统还包括用于将浸渍液体保持器中的抗蚀剂涂覆的半导体晶片定位的台和靠近浸没流体保持器的透镜，并且可定位用于将图像投影通过浸没流体并且涂覆到抗蚀剂涂覆的半导体晶片上。 浸没流体保持器包括被配置为减少污染物从浸渍流体中的污染物粘附的涂层。

公开(公告)号：US20070093067A1

公开(公告)日：2007-04-26

申请号：US11256711

申请日：2005-10-24

Applicant: Ching-Yu Chang ,  Burn Lin

Inventor： Ching-Yu Chang ,  Burn Lin

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/67046 ,  H01L21/67051 ,  H01L21/6708

Abstract: A method of processing a semiconductor wafer can be used prior to an immersion lithography process. The method includes providing a layer of organic photoresist onto a surface of the semiconductor wafer and removing a portion of the photoresist from an outer edge of the wafer using an edge-bead removal process. The outer edge of the wafer is then cleaned using one or more processes, including a mechanical scrubber/cleaner, mega-sonic power, de-ionized water and/or chemical solution.

Abstract translation: 在浸没光刻工艺之前可以使用半导体晶片的处理方法。 该方法包括在半导体晶片的表面上提供一层有机光致抗蚀剂，并使用边缘珠去除工艺从晶片的外边缘去除一部分光致抗蚀剂。 然后使用一个或多个工艺（包括机械洗涤器/清洁器，超声功率，去离子水和/或化学溶液）清洁晶片的外边缘。

公开(公告)号：US20060141399A1

公开(公告)日：2006-06-29

申请号：US11025538

申请日：2004-12-29

Applicant: Ching-Yu Chang ,  Burn Lin ,  Chi-Wen Liu

Inventor： Ching-Yu Chang ,  Burn Lin ,  Chi-Wen Liu

IPC: G03F7/00

CPC classification number: G03F7/322

Abstract: A method of creating a resist image on a semiconductor substrate includes exposing a layer of photoresist on the semiconductor substrate and developing the exposed layer of photoresist using a first fluid including supercritical carbon dioxide and a base such as Tetra-Methyl Ammonium Hydroxide (TMAH). Additionally, the developed photoresist can be cleaned using a second fluid including supercritical carbon dioxide and a solvent such as methanol, ethanol, isopropanol, and xylene.

公开(公告)号：US20060172520A1

公开(公告)日：2006-08-03

申请号：US11050312

申请日：2005-02-03

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin

IPC: H01L21/4763 ,  H01L21/3205

CPC classification number: H01L21/76802 ,  H01L21/31144

Abstract: A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

Abstract translation: 一种用于形成半导体器件的方法包括在衬底上形成光致抗蚀剂层并图案化光致抗蚀剂层以形成光致抗蚀剂部分。 在不被光致抗蚀剂部分覆盖的区域中的衬底上形成第二层，并去除光致抗蚀剂部分。 在去除光致抗蚀剂部分之后，第二层用于修改基板以产生半导体器件的至少一部分。

公开(公告)号：US20080054191A1

公开(公告)日：2008-03-06

申请号：US11934512

申请日：2007-11-02

Applicant: Chin-Hsiang Lin ,  Burn Lin ,  Tsai-Sheng Gau

Inventor： Chin-Hsiang Lin ,  Burn Lin ,  Tsai-Sheng Gau

IPC: B05C11/00 ,  G21G5/00 ,  A61N5/00

CPC classification number: G03F7/7065 ,  G03F7/70383 ,  H01L22/22 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of wafer repairing comprises identifying locations and patterns of defective regions in a semiconductor wafer; communicating the locations and patterns of defective regions to a direct-writing tool; forming a photoresist layer on the semiconductor wafer; locally exposing the photoresist layer within the defective regions using an energy beam; developing the photoresist layer on the semiconductor wafer; and wafer-processing the semiconductor wafer under the photoresist layer after exposing and developing.

Abstract translation: 晶片修复的方法包括识别半导体晶片中的缺陷区域的位置和图案; 将缺陷区域的位置和图案传送到直写工具; 在半导体晶片上形成光致抗蚀剂层; 使用能量束将缺陷区域内的光致抗蚀剂层局部曝光; 在半导体晶片上显影光致抗蚀剂层; 并在曝光和显影之后将光致抗蚀剂层下方的半导体晶片进行晶片处理。

公开(公告)号：US20060148109A1

公开(公告)日：2006-07-06

申请号：US11029992

申请日：2005-01-05

Applicant: Chin-Hsiang Lin ,  Burn Lin ,  Tsai-Sheng Gau

Inventor： Chin-Hsiang Lin ,  Burn Lin ,  Tsai-Sheng Gau

IPC: H01L21/00 ,  G06K9/00

CPC classification number: G03F7/7065 ,  G03F7/70383 ,  H01L22/22 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of wafer repairing comprises identifying locations and patterns of defective regions in a semiconductor wafer; communicating the locations and patterns of defective regions to a direct-writing tool; forming a photoresist layer on the semiconductor wafer; locally exposing the photoresist layer within the defective regions using an energy beam; developing the photoresist layer on the semiconductor wafer; and wafer-processing the semiconductor wafer under the photoresist layer after exposing and developing.

Abstract translation: 晶片修复的方法包括识别半导体晶片中的缺陷区域的位置和图案; 将缺陷区域的位置和图案传送到直写工具; 在半导体晶片上形成光致抗蚀剂层; 使用能量束将缺陷区域内的光致抗蚀剂层局部曝光; 在半导体晶片上显影光致抗蚀剂层; 并在曝光和显影之后将光致抗蚀剂层下方的半导体晶片进行晶片处理。

公开(公告)号：US20060139603A1

公开(公告)日：2006-06-29

申请号：US11317974

申请日：2005-12-23

Applicant: Burn Lin

Inventor： Burn Lin

IPC: G03B27/54

CPC classification number: G03F7/70275 ,  G03F7/70208 ,  G03F7/70283

Abstract: An exposure system includes a mask stage module adapted for holding a first mask and a second mask, wherein the first mask is configured for illumination by a first beam to form a transformed first beam having a first pattern from the first mask and the second mask is configured for illumination by a second beam to form a transformed second beam having a second pattern from the second mask. The exposure system also includes a beam combiner configured to combine the transformed first and second beams to form a resultant beam, wherein the resultant beam is projected into a substrate coated with a photoresist layer.

Abstract translation: 曝光系统包括适于保持第一掩模和第二掩模的掩模台模块，其中第一掩模被配置为由第一光束照明以形成具有来自第一掩模的第一图案的变换的第一光束，而第二掩模是 被配置为由第二光束照明以形成具有来自第二掩模的第二图案的变换的第二光束。 曝光系统还包括光束组合器，其被配置为组合变换的第一和第二光束以形成合成光束，其中所得到的光束投射到涂覆有光致抗蚀剂层的基板中。

公开(公告)号：US20060083997A1

公开(公告)日：2006-04-20

申请号：US11248070

申请日：2005-10-12

Applicant: Burn Lin ,  Jeng-Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih ,  Hua-Tai Lin ,  Hung Hsieh

Inventor： Burn Lin ,  Jeng-Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih ,  Hua-Tai Lin ,  Hung Hsieh

IPC: A47G1/12 ,  G03F1/14 ,  G03F1/00

CPC classification number: G03F1/38

Abstract: Disclosed is a photomask comprising a transparent substrate, an absorption layer proximate to the transparent substrate, and a pellicle mounted proximate to the transparent substrate. The absorption layer has at least one opening formed therein for receiving a wavelength-reducing material (WRM). The wavelength-reducing material and the absorption layer form a generally planar surface.

Abstract translation: 公开了一种光掩模，其包括透明基板，靠近透明基板的吸收层和靠近透明基板安装的防护薄膜组件。 吸收层具有形成在其中的至少一个开口用于接收波长减小材料（WRM）。 波长减小材料和吸收层形成大致平坦的表面。

公开(公告)号：US20050164098A1

公开(公告)日：2005-07-28

申请号：US10765531

申请日：2004-01-27

Applicant: Burn Lin ,  Ping Yang ,  Hong Hsieh ,  Yao Ku ,  Chin-Hsiang Lin ,  Chiu Yoo

Inventor： Burn Lin ,  Ping Yang ,  Hong Hsieh ,  Yao Ku ,  Chin-Hsiang Lin ,  Chiu Yoo

IPC: G03C5/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/00

CPC classification number: G03F7/70425 ,  G03F1/72 ,  G03F1/76 ,  G03F1/84 ,  G03F7/70383 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7046 ,  G03F9/7049

Abstract: A method and system is disclosed for processing one or more oblique features on a mask or reticle substrate. After aligning the mask or reticle substrate with a predetermined reference system, an offset angle of a feature to be processed on the mask or reticle substrate with regard to either the horizontal or vertical reference direction of the predetermined reference system is determined. The mask or reticle substrate is rotated in a predetermined direction by the offset angle; and the feature on the mask or reticle substrate is processed using the predetermined reference system wherein the feature is processed in either the horizontal or vertical reference direction thereof.

Abstract translation: 公开了一种用于处理掩模或掩模版基板上的一个或多个倾斜特征的方法和系统。 在掩模或掩模版基板与预定的参考系统对准之后，确定相对于预定参考系的水平或垂直参考方向在掩模或掩模版基板上要处理的特征的偏移角。 掩模或掩模版基板沿预定方向旋转偏移角; 并且使用预定的参考系统处理掩模或掩模版基板上的特征，其中特征在水平或垂直参考方向上被处理。