公开(公告)号：US20130307103A1

公开(公告)日：2013-11-21

申请号：US13475301

申请日：2012-05-18

申请人： Jeng-Shyan Lin ,  Feng-Chi Hung ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Szu-Ying Chen ,  Wen-De Wang ,  Tzu-Hsuan Hsu

发明人： Jeng-Shyan Lin ,  Feng-Chi Hung ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Szu-Ying Chen ,  Wen-De Wang ,  Tzu-Hsuan Hsu

IPC分类号： H01L31/0232 ,  H01L31/02

CPC分类号： H01L27/14687 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/1469 ,  H01L2224/48463

摘要： A device includes a Backside Illumination (BSI) image sensor chip, which includes an image sensor disposed on a front side of a first semiconductor substrate, and a first interconnect structure including a plurality of metal layers on the front side of the first semiconductor substrate. A device chip is bonded to the image sensor chip. The device chip includes an active device on a front side of a second semiconductor substrate, and a second interconnect structure including a plurality of metal layers on the front side of the second semiconductor substrate. A first via penetrates through the BSI image sensor chip to connect to a first metal pad in the second interconnect structure. A second via penetrates through a dielectric layer in the first interconnect structure to connect to a second metal pad in the first interconnect structure, wherein the first via and the second via are electrically connected.

摘要翻译： 一种装置包括背面照明（BSI）图像传感器芯片，其包括设置在第一半导体衬底的前侧上的图像传感器，以及包括在第一半导体衬底的前侧上的多个金属层的第一互连结构。 器件芯片被结合到图像传感器芯片。 器件芯片包括在第二半导体衬底的正面上的有源器件和在第二半导体衬底的正面上包括多个金属层的第二互连结构。 第一通孔穿过BSI图像传感器芯片以连接到第二互连结构中的第一金属焊盘。 第二通孔穿过第一互连结构中的电介质层，以连接到第一互连结构中的第二金属焊盘，其中第一通孔和第二通孔电连接。

公开(公告)号：US20130285180A1

公开(公告)日：2013-10-31

申请号：US13458812

申请日：2012-04-27

申请人： Tzu-Jui Wang ,  Szu-Ying Chen ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Ping-Yin Liu ,  Lan-Lin Chao

发明人： Tzu-Jui Wang ,  Szu-Ying Chen ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Ping-Yin Liu ,  Lan-Lin Chao

IPC分类号： H01L31/0232 ,  H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14683 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1469 ,  H01L2924/0002 ,  H01L2924/00

摘要： A backside illuminated image sensor comprises a photodiode and a first transistor located in a first chip, wherein the first transistor is electrically coupled to the photodiode. The backside illuminated image sensor further comprises a second transistor formed in a second chip and a plurality of logic circuits formed in a third chip, wherein the second chip is stacked on the first chip and the third chip is stacked on the second chip. The logic circuit, the second transistor and the first transistor are coupled to each other through a plurality of boding pads and through vias.

摘要翻译： 背面照明图像传感器包括光电二极管和位于第一芯片中的第一晶体管，其中第一晶体管电耦合到光电二极管。 背面照明图像传感器还包括形成在第二芯片中的第二晶体管和形成在第三芯片中的多个逻辑电路，其中第二芯片堆叠在第一芯片上，第三芯片堆叠在第二芯片上。 逻辑电路，第二晶体管和第一晶体管通过多个焊盘和通孔彼此耦合。

公开(公告)号：US20130284885A1

公开(公告)日：2013-10-31

申请号：US13457637

申请日：2012-04-27

申请人： Szu-Ying Chen ,  Ping-Yin Liu ,  Calvin Yi-Ping Chao ,  Tzu-Jui Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Lan-Lin Chao

发明人： Szu-Ying Chen ,  Ping-Yin Liu ,  Calvin Yi-Ping Chao ,  Tzu-Jui Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Lan-Lin Chao

IPC分类号： H01L27/146

CPC分类号： H01L27/1469 ,  H01L25/16 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a sensor device with an application specific integrated circuit (ASIC) are disclosed. According to an embodiment, a sensor device may be bonded together face-to-face with an ASIC without using a carrier wafer, where corresponding bond pads of the sensor are aligned with bond pads of the ASIC and bonded together, in a one-to-one fashion. A column of pixels of the sensor may share a bond bad connected by a shared inter-metal line. The bond pads may be of different sizes and configured in different rows to be disjoint from each other. Additional dummy pads may be added to increase the bonding between the sensor and the ASIC.

摘要翻译： 公开了用于封装具有专用集成电路（ASIC）的背面照明（BSI）图像传感器或传感器装置的方法和装置。 根据实施例，传感器设备可以与ASIC面对面地结合在一起，而不使用载体晶片，其中传感器的相应接合焊盘与ASIC的接合焊盘对准并且结合在一起，以一对一 一个时尚。 传感器的像素列可以共享由共享的金属间线路连接不良的键。 接合焊盘可以具有不同的尺寸并且被配置成不同的行以彼此不相交。 可以添加附加的虚拟焊盘以增加传感器和ASIC之间的接合。

公开(公告)号：US20130277719A1

公开(公告)日：2013-10-24

申请号：US13474512

申请日：2012-05-17

申请人： Min-Feng Kao ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Tzu-Hsuan Hsu ,  Feng-Chi Hung

发明人： Min-Feng Kao ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Tzu-Hsuan Hsu ,  Feng-Chi Hung

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/2652 ,  H01L21/28114 ,  H01L21/76229 ,  H01L23/544 ,  H01L27/14609 ,  H01L27/1464 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device includes a semiconductor substrate, and a Device Isolation (DI) region extending from a top surface of the semiconductor substrate into the semiconductor substrate. A gate dielectric is disposed over an active region of the semiconductor substrate, wherein the gate dielectric extends over the DI region. A gate electrode is disposed over the gate dielectric, wherein a notch of the gate electrode overlaps a portion of the DI region.

摘要翻译： 一种器件包括半导体衬底和从半导体衬底的顶表面延伸到半导体衬底中的器件隔离（DI）区域。 栅极电介质设置在半导体衬底的有源区上，其中栅极电介质延伸超过DI区域。 栅电极设置在栅极电介质上，其中栅电极的凹口与DI区的一部分重叠。

公开(公告)号：US08455971B2

公开(公告)日：2013-06-04

申请号：US13026994

申请日：2011-02-14

申请人： Szu-Ying Chen ,  Pao-Tung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Szu-Ying Chen ,  Pao-Tung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/1461 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides an image sensor device and a method of forming the image sensor device. In an example, an image sensor device includes a substrate having a front surface and a back surface; a sensor element disposed at the front surface of the substrate, the sensor element being operable to sense radiation projected toward the back surface of the substrate; and a transparent conductive layer disposed over the back surface of the substrate, the transparent conductive layer at least partially overlying the sensor element. The transparent conductive layer is configured for being electrically coupled to a bottom portion of the sensor element.

摘要翻译： 本公开提供了一种图像传感器装置和形成图像传感器装置的方法。 在一个示例中，图像传感器装置包括具有前表面和后表面的基板; 设置在所述基板的前表面处的传感器元件，所述传感器元件可操作以感测朝向所述基板的后表面投射的辐射; 以及设置在所述基板的所述背面上方的透明导电层，所述透明导电层至少部分地覆盖所述传感器元件。 透明导电层被配置为电耦合到传感器元件的底部。

公开(公告)号：US08390089B2

公开(公告)日：2013-03-05

申请号：US12844642

申请日：2010-07-27

申请人： Szu-Ying Chen ,  Chun-Chieh Chuang ,  Jen-Cheng Liu ,  Dun-Nian Yaung

发明人： Szu-Ying Chen ,  Chun-Chieh Chuang ,  Jen-Cheng Liu ,  Dun-Nian Yaung

IPC分类号： H01L21/00

CPC分类号： H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

摘要： Provided is a back side illuminated image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the front side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a deep trench isolation feature that is disposed adjacent to the radiation-detection device. The image sensor device further includes a doped layer that at least partially surrounds the deep trench isolation feature in a conformal manner.

摘要翻译： 提供了背面照明图像传感器装置。 图像传感器装置包括具有与前侧相对的前侧和后侧的基板。 图像传感器还包括形成在基板中的放射线检测装置。 放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括与辐射检测装置相邻设置的深沟槽隔离特征。 图像传感器装置还包括以保形方式至少部分地围绕深沟槽隔离特征的掺杂层。

公开(公告)号：US20130032912A1

公开(公告)日：2013-02-07

申请号：US13198018

申请日：2011-08-04

申请人： Szu-Ying Chen ,  Tzu-Jui Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung

发明人： Szu-Ying Chen ,  Tzu-Jui Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/1463 ,  H01L21/76232 ,  H01L27/14643 ,  H01L27/14689

摘要： A circuit structure includes a semiconductor substrate having a top surface. A dielectric material extends from the top surface into the semiconductor substrate. A high-k dielectric layer is formed of a high-k dielectric material, wherein the high-k dielectric layer comprises a first portion on a sidewall of the dielectric material, and a second portion underlying the dielectric material.

摘要翻译： 电路结构包括具有顶表面的半导体衬底。 电介质材料从顶表面延伸到半导体衬底中。 高k电介质层由高k电介质材料形成，其中高k电介质层包括电介质材料的侧壁上的第一部分和介电材料下面的第二部分。

公开(公告)号：US08283469B2

公开(公告)日：2012-10-09

申请号：US12730542

申请日：2010-03-24

申请人： Szu-Ying Chen ,  Heng-Wen Ting ,  Tri-Rung Yew ,  Jeng-Hua Wei

发明人： Szu-Ying Chen ,  Heng-Wen Ting ,  Tri-Rung Yew ,  Jeng-Hua Wei

IPC分类号： C07D471/02 ,  H01L29/12

CPC分类号： C07D471/04 ,  H01L51/0053 ,  H01L51/0541

摘要： The present invention discloses a soluble and air-stable perylene diimide (PDI) derivative to function as an N-type organic semiconductor material. In the PDI derivative of the present invention, the core thereof is substituted by electron withdrawing groups, and the side chains thereof are substituted by benzene functional groups, whereby are promoted the solubility and air-stability of the molecule. The PDI derivative of the present invention can be used to fabricate an organic semiconductor element via a soluble process at a low temperature and under an atmospheric environment.

摘要翻译： 本发明公开了用作N型有机半导体材料的可溶性和空气稳定的苝二酰亚胺（PDI）衍生物。 在本发明的PDI衍生物中，其核心被吸电子基团取代，其侧链被苯官能团取代，从而促进了分子的溶解度和空气稳定性。 本发明的PDI衍生物可用于在低温和大气环境下通过可溶性方法制造有机半导体元件。

公开(公告)号：US20110233526A1

公开(公告)日：2011-09-29

申请号：US12730542

申请日：2010-03-24

申请人： Szu-Ying Chen ,  Heng-Wen Ting ,  Tri-Rung Yew ,  Jeng-Hua Wei

发明人： Szu-Ying Chen ,  Heng-Wen Ting ,  Tri-Rung Yew ,  Jeng-Hua Wei

IPC分类号： H01L51/30 ,  C07D471/02

CPC分类号： C07D471/04 ,  H01L51/0053 ,  H01L51/0541

摘要： The present invention discloses a soluble and air-stable perylene diimide (PDI) derivative to function as an N-type organic semiconductor material. In the PDI derivative of the present invention, the core thereof is substituted by electron withdrawing groups, and the side chains thereof are substituted by benzene functional groups, whereby are promoted the solubility and air-stability of the molecule. The PDI derivative of the present invention can be used to fabricate an organic semiconductor element via a soluble process at a low temperature and under an atmospheric environment.

摘要翻译： 本发明公开了用作N型有机半导体材料的可溶性和空气稳定的苝二酰亚胺（PDI）衍生物。 在本发明的PDI衍生物中，其核心被吸电子基团取代，其侧链被苯官能团取代，从而促进了分子的溶解度和空气稳定性。 本发明的PDI衍生物可用于在低温和大气环境下通过可溶性方法制造有机半导体元件。

公开(公告)号：US09884271B2

公开(公告)日：2018-02-06

申请号：US14788793

申请日：2015-07-01

申请人： Szu-Ying Chen

发明人： Szu-Ying Chen

IPC分类号： B01D29/46 ,  B01D24/12 ,  B01D24/46

CPC分类号： B01D24/12 ,  B01D24/46 ,  B01D24/461 ,  B01D24/4631 ,  B01D24/4673 ,  B01D24/4694

摘要： A filter structure has a main body and a stirring member. The main body has a hollow containment space filled with a filtering material. A filtering mesh is disposed at a bottom side of the containment space. A first purifying opening is disposed at a top end of the main body. A second purifying opening is disposed at a lower sidewall position of the main body above the filtering mesh. A first cleaning opening and a second cleaning opening are disposed on the main body and respectively coupled to a first and second inner pipe. An outlet is disposed at a bottom of the main body. The stirring member has an upper cover corresponding to the first purifying opening of the main body. The upper cover further has a driving arm and a connecting rod, and the connecting rod has a plurality of stirring rods.