公开(公告)号：US06979586B2

公开(公告)日：2005-12-27

申请号：US10872915

申请日：2004-06-21

申请人： Yimin Guo ,  Tai Min ,  Pokang Wang ,  Xi Zeng Shi

发明人： Yimin Guo ,  Tai Min ,  Pokang Wang ,  Xi Zeng Shi

IPC分类号： A61K31/404 ,  C07D209/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L21/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675

摘要： An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.

摘要翻译： 在正交字和位线之间形成MTJ元素。 位线是在高导电率层下包括高导电性层和软磁性层的复合线。 在操作期间，软磁性层集中了电流的磁场，并且由于其接近于自由层，它与MTJ中的自由层磁耦合。 该耦合为自由层磁化提供了热稳定性，并且易于切换，并且可以通过在形成期间通过在自由层中引起形状或晶体各向异性而进一步增强耦合。

公开(公告)号：US08217684B2

公开(公告)日：2012-07-10

申请号：US12925004

申请日：2010-10-12

申请人： Perng-Fei Yuh ,  Pokang Wang ,  Lejan Pu ,  Minh Tran ,  Chao-Hung Chang

发明人： Perng-Fei Yuh ,  Pokang Wang ,  Lejan Pu ,  Minh Tran ,  Chao-Hung Chang

IPC分类号： H03B1/00

CPC分类号： G05F3/26 ,  G11C11/16 ,  G11C29/021 ,  G11C29/028

摘要： Systems and methods for realizing current drivers without current or voltage feedback for devices that require accurate current drive with zero standby current has been disclosed. In a preferred embodiment of the invention this current driver is applied for write circuits for MRAMs. A fast and accurate reference current is generated by diode voltage divided by resistor without any feedback. The diode current is not fed back from the reference current. The diode current is generated from a regulated voltage. Temperature compensation of the write current is inherently built in the diode current reference. Fine-tuning of the temperature coefficient is achieved by mixing poly and diffusion resistors. A switch inserted in the current driver can turn on the driver fast and without a need for standby current. Leading boost in the current driver can fast charge the large coupling capacitance of word and bit lines and speed up write timing.

摘要翻译： 已经公开了用于实现没有电流或电压反馈的电流驱动器的系统和方法，用于需要具有零待机电流的精确电流驱动的装置。 在本发明的优选实施例中，该电流驱动器被应用于MRAM的写入电路。 通过二极管电压除以电阻而没有任何反馈产生快速准确的参考电流。 二极管电流不从参考电流反馈。 二极管电流由调节电压产生。 写入电流的温度补偿固有地内置在二极管电流参考中。 通过混合多聚电阻和扩散电阻来实现温度系数的微调。 插入当前驱动程序的开关可快速打开驱动器，无需待机电流。 当前驱动器的领先提升可以快速充电字和位线的大耦合电容，并加快写时序。

公开(公告)号：US20060211155A1

公开(公告)日：2006-09-21

申请号：US11438179

申请日：2006-05-22

申请人： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

发明人： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

IPC分类号： H01L21/00

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1659

摘要： An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. Because the lines require thinner depositions, there is no necessity of removing material by CMP during patterning and polishing. Therefore, there is a uniform spacing between the lines and the cell free layer.

摘要翻译： 在厚度小于100nm的高导电性材料的超薄正交字和位线之间形成MTJ MRAM单元。 该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。 因为这些线需要更薄的沉积，所以在图案化和抛光期间不需要通过CMP去除材料。 因此，线和无细胞层之间存在均匀的间隔。

公开(公告)号：US07067330B2

公开(公告)日：2006-06-27

申请号：US10892668

申请日：2004-07-16

申请人： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

发明人： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

IPC分类号： H01L21/00

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1659

摘要： An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.

公开(公告)号：US20060023492A1

公开(公告)日：2006-02-02

申请号：US10900943

申请日：2004-07-28

申请人： Tai Min ,  Yimin Guo ,  Pokang Wang

发明人： Tai Min ,  Yimin Guo ,  Pokang Wang

IPC分类号： G11C11/14

CPC分类号： G11C11/16

摘要： An MTJ is disclosed in which the free layer and reference layer have a vortex magnetization state that is formed with a clockwise or counterclockwise rotation. The MTJ has a low aspect ratio elliptical shape and the magnetic layers have a dopant that is one of C, N, B, Zr, Ta, Pt, Nb, or Hf to facilitate the flux closure configuration. The vortex magnetization is induced by applying a reverse magnetic field in a direction opposite to the remnant magnetization in a magnetic layer. An anti-ferromagnetic layer is set in an AFM phase after the vortex state is induced in the adjacent reference layer. Switching the vortex state in the free layer involves applying a first field in a first direction to break the vortex and then applying a smaller second field in a reverse direction to a critical point where a vortex of opposite spin is induced.

摘要翻译： 公开了一种MTJ，其中自由层和参考层具有形成有顺时针或逆时针旋转的涡流磁化状态。 MTJ具有低纵横比的椭圆形状，并且磁性层具有作为C，N，B，Zr，Ta，Pt，Nb或Hf之一的掺杂剂，以促进磁通闭合配置。 通过在与磁性层中的残余磁化相反的方向上施加反向磁场来感应涡流磁化。 在相邻参考层中引起涡流状态后，将反铁磁层设置在AFM相中。 在自由层中切换涡流状态包括在第一方向上施加第一场以破坏涡流，然后沿相反方向施加相对方向的较小的第二场，该临界点引起相反旋转的漩涡。

公开(公告)号：US20060014346A1

公开(公告)日：2006-01-19

申请号：US11001382

申请日：2004-12-01

申请人： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

发明人： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

IPC分类号： H01L21/336

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1659

摘要： An MTJ MRAM cell is formed between or below an intersection of ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.

摘要翻译： 在厚度小于100nm的高导电性材料的超薄正交字和位线的交点之间或之下形成MTJ MRAM单元。 该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。 由于制造工艺消除了在图案化和抛光期间通过CMP去除材料的必要性，因此在线和无细胞层之间产生均匀的间隔，因此由于较薄的沉积，实际上简化了具有这种细线的电池的制造。

公开(公告)号：US20130176773A1

公开(公告)日：2013-07-11

申请号：US13345116

申请日：2012-01-06

申请人： Perng-Fei Yuh ,  Pokang Wang ,  Lejan Pu

发明人： Perng-Fei Yuh ,  Pokang Wang ,  Lejan Pu

IPC分类号： G11C11/02 ,  G11C7/06

CPC分类号： G11C7/06 ,  G11C11/1673 ,  G11C2207/063

摘要： A sense amplifier comprising a reference current developed from a programmed and a non-programmed reference cell is used to read a signal from a magnetic random access memory (MRAM) comprising magnetic tunnel junction (MTJ) cells. The average current is determined from reference cells in as few as one sense amplifier and as many as n sense amplifiers, and is an average current between the programmed reference cell and the non-programmed reference cell that approximates the mid point between the two states. The sense amplifier can be fully differential or a non differential sense amplifier.

摘要翻译： 包括从编程和非编程参考单元产生的参考电流的读出放大器用于从包括磁性隧道结（MTJ）单元的磁性随机存取存储器（MRAM）读取信号。 平均电流由少于1个读出放大器和多达n个读出放大器的参考单元确定，并且是编程参考单元和非编程参考单元之间的平均电流，其近似于两个状态之间的中点。 读出放大器可以是全差分或非差分读出放大器。

公开(公告)号：US08203389B1

公开(公告)日：2012-06-19

申请号：US12928194

申请日：2010-12-06

申请人： Yuchen Zhou ,  Kunliang Zhang ,  Pokang Wang ,  Joe Smyth

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Pokang Wang ,  Joe Smyth

IPC分类号： H03L7/26

CPC分类号： H03B15/006

摘要： A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.

摘要翻译： 公开了具有包括磁阻层（MRL）/间隔物/磁振荡层（MOL））构造的巨磁阻（GMR）结的自旋转移振荡器（STO）装置，以及包括感测层/结层/参考 层配置。 MOL和感测层通过导电间隔件静磁耦合和分离。 MRL具有垂直磁各向异性，而MOL和感测层的Mst（饱和磁化强度×厚度）值彼此在±50％以内。 当垂直于MOL的平面施加磁场并且高密度电流从导电间隔物流向MRL时，产生具有一定频率的MOL振荡状态。 因此，感测层以类似的RF频率振荡，并且当低密度电流流过MR传感器时，产生AC电压信号以确定可以通过调整所施加的场来改变的感测层频率。

公开(公告)号：US20120139649A1

公开(公告)日：2012-06-07

申请号：US12928194

申请日：2010-12-06

申请人： Yuchen Zhou ,  Kunliang Zhang ,  Pokang Wang ,  Joe Smyth

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Pokang Wang ,  Joe Smyth

IPC分类号： H03B28/00

CPC分类号： H03B15/006

摘要： A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.

摘要翻译： 公开了具有包括磁阻层（MRL）/间隔物/磁振荡层（MOL））构造的巨磁阻（GMR）结的自旋转移振荡器（STO）装置，以及包括感测层/结层/参考 层配置。 MOL和感测层通过导电间隔件静磁耦合和分离。 MRL具有垂直磁各向异性，而MOL和感测层的Mst（饱和磁化强度×厚度）值彼此在±50％以内。 当垂直于MOL的平面施加磁场并且高密度电流从导电间隔物流向MRL时，产生具有一定频率的MOL振荡状态。 因此，感测层以类似的RF频率振荡，并且当低密度电流流过MR传感器时，产生AC电压信号以确定可以通过调整所施加的场来改变的感测层频率。

公开(公告)号：US20120086476A1

公开(公告)日：2012-04-12

申请号：US12925004

申请日：2010-10-12

申请人： Perng-Fei Yuh ,  Pokang Wang ,  Lejan Pu ,  Minh Tran ,  Chao-Hung Chang

发明人： Perng-Fei Yuh ,  Pokang Wang ,  Lejan Pu ,  Minh Tran ,  Chao-Hung Chang

IPC分类号： H03K3/00

CPC分类号： G05F3/26 ,  G11C11/16 ,  G11C29/021 ,  G11C29/028

摘要： Systems and methods for realizing current drivers without current or voltage feedback for devices that require accurate current drive with zero standby current has been disclosed. In a preferred embodiment of the invention this current driver is applied for write circuits for MRAMs. A fast and accurate reference current is generated by diode voltage divided by resistor without any feedback. The diode current is not fed back from the reference current. The diode current is generated from a regulated voltage. Temperature compensation of the write current is inherently built in the diode current reference. Fine-tuning of the temperature coefficient is achieved by mixing poly and diffusion resistors. A switch inserted in the current driver can turn on the driver fast and without a need for standby current. Leading boost in the current driver can fast charge the large coupling capacitance of word and bit lines and speed up write timing.