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21.发明授权Thin film transistor, method of manufacturing the thin film transistor, and display device 失效薄膜晶体管，制造薄膜晶体管的方法和显示装置公开(公告)号：US07635619B2
公开(公告)日：2009-12-22
申请号：US11733925
申请日：2007-04-11
申请人： Hitoshi Nagata
发明人： Hitoshi Nagata
IPC分类号： H01L21/336
CPC分类号： H01L29/78615 , H01L27/13 , H01L29/78621 , H01L29/78624
摘要： A thin film transistor according to an embodiment of the present invention includes: a semiconductor layer formed on a substrate and having a first diffusion region, a channel region, and a second diffusion region; a gate electrode opposite to the semiconductor layer across a gate insulating film formed on the semiconductor layer; and a connecting conductive film formed on the semiconductor layer opposite to the gate insulating film and extending from the first diffusion region up to a predetermined position in the channel region to electrically connect between the first diffusion region and the channel region. The transistor further includes a laying conductive layer formed on the semiconductor layer opposite to the gate insulating film and electrically connected with the second diffusion region.
摘要翻译： 根据本发明实施例的薄膜晶体管包括：形成在衬底上并具有第一扩散区，沟道区和第二扩散区的半导体层; 形成在半导体层上的栅极绝缘膜上的与半导体层相对的栅电极; 以及连接导电膜，形成在与栅极绝缘膜相对的半导体层上并且从第一扩散区延伸到沟道区中的预定位置，以在第一扩散区和沟道区之间电连接。 晶体管还包括形成在与栅极绝缘膜相对的半导体层上并与第二扩散区电连接的敷设导电层。
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公开(公告)号：US07541646B2
公开(公告)日：2009-06-02
申请号：US11673773
申请日：2007-02-12
申请人： Hitoshi Nagata , Takao Sakamoto , Naoki Nakagawa
发明人： Hitoshi Nagata , Takao Sakamoto , Naoki Nakagawa
IPC分类号： H01L21/84
CPC分类号： H01L29/4908 , H01L27/1248 , H01L29/66757 , H01L29/78636
摘要： A thin film transistor device according to an embodiment of the invention includes: a thin film transistor having a silicon layer including a source region, a drain region, and a channel region, a gate insulating layer, and a gate electrode formed on an insulating substrate; an interlayer insulating layer covering the thin film transistor; a line electrically connected with the source region, the drain region, and the gate electrode through a contact hole formed in the interlayer insulating layer; a first upper insulating layer covering the line and the interlayer insulating layer and smoothing out stepped portions of the line and irregularities of a surface of the interlayer insulating layer; and a second upper insulating layer covering the first upper insulating layer, the second upper insulating layer having a hydrogen diffusion coefficient smaller than a hydrogen diffusion coefficient of the first upper insulating layer.
摘要翻译： 根据本发明实施例的薄膜晶体管器件包括：薄膜晶体管，其具有包括源极区，漏极区和沟道区的硅层，栅极绝缘层和形成在绝缘基板上的栅电极 ; 覆盖薄膜晶体管的层间绝缘层; 通过形成在所述层间绝缘层中的接触孔与所述源极区，所述漏极区和所述栅电极电连接的线; 覆盖所述线和所述层间绝缘层的第一上绝缘层，并平滑所述线的台阶部分和所述层间绝缘层的表面的不规则性; 以及覆盖所述第一上绝缘层的第二上绝缘层，所述第二上绝缘层的氢扩散系数小于所述第一上绝缘层的氢扩散系数。
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公开(公告)号：US5427876A
公开(公告)日：1995-06-27
申请号：US47464
申请日：1993-04-19
申请人： Junji Miyazaki , Hitoshi Nagata
发明人： Junji Miyazaki , Hitoshi Nagata
IPC分类号： G03F1/28 , G03F1/68 , G03F1/80 , H01L21/027 , G03F9/00
摘要： A mask pattern is transferred at a high resolution regardless of the configuration of a light shielding region. A plurality of light shielding members are disposed on a transparent substrate spaced from and parallel to each other. A main phase shifting film is formed in every other region between adjacent light shielding members on the transparent substrate in a direction along the arrangement of the light shielding members. At the periphery of the main phase shifting film, an auxiliary phase shifting film is disposed. Light through the main phase shifting film is 180 degrees out of phase from light through the transparent substrate while light through the auxiliary phase shifting film is 90 degrees out of phase from light through the transparent substrate. Due to the auxiliary phase shifting film, the intensity of transmitted light would not drop to zero at a border region between the main phase shifting film and the transparent substrate. Hence, the mask pattern is transferred at an enhanced transfer accuracy.
摘要翻译： 无论遮光区域的构造如何，以高分辨率传送掩模图案。 多个遮光构件设置在彼此间隔开并且彼此平行的透明基板上。 在透明基板上的相邻的遮光部件之间的沿着遮光部件的配置的方向上的其他区域中形成有主相移膜。 在主相移膜的周围设有辅助移相膜。 通过主相移膜的光通过透明基板从光线相差180度，而通过辅助移相膜的光通过透明基板从光线相差90度。 由于辅助移相膜，透射光的强度在主相移膜和透明基板之间的边界区域不会下降到零。 因此，以增强的转印精度传送掩模图案。
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公开(公告)号：US5254418A
公开(公告)日：1993-10-19
申请号：US777189
申请日：1991-10-16
申请人： Kazuya Kamon , Junji Miyazaki , Hitoshi Nagata
发明人： Kazuya Kamon , Junji Miyazaki , Hitoshi Nagata
摘要： A method of manufacturing a photomask, according to the present invention, comprises the step of entirely forming an intermediate shifter on a transparent substrate, light shielding layers and a phase shifter such that the thickness of the intermediate shifter successively varies. In edge portion of the phase shifter, thus, the phase of light is continuosly shifted from 0 to 180 degree. As in result, light intensity at the edge portion does not decrease to zero but has a relatively large value, preventing a bridge to be formed.
摘要翻译： 根据本发明的制造光掩模的方法包括在透明基板，遮光层和移相器上完全形成中间移位器的步骤，使得中间移位器的厚度依次变化。 因此，在移相器的边缘部分，光的相位从0到180度连续地偏移。 结果，边缘部分的光强度不降低到零但具有相对较大的值，从而防止形成桥。
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公开(公告)号：US20080029767A1
公开(公告)日：2008-02-07
申请号：US11830474
申请日：2007-07-30
申请人： Hitoshi Nagata , Toru Takeguchi
发明人： Hitoshi Nagata , Toru Takeguchi
IPC分类号： H01L27/105 , H01L21/84
CPC分类号： G02F1/1368 , H01L27/124 , H01L27/1255 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908
摘要： A display device according to an embodiment of the present invention includes: a crystalline silicon layer formed on a substrate and including a source region, a drain region, and a channel region; a wiring layer including a signal line and formed to cover at least a predetermined portion on the source region and the drain region; a gate insulating layer formed on the crystalline silicon layer and the wiring layer; a gate electrode layer formed above the gate insulating layer and including a scanning line, a gate electrode corresponding to the channel region, and a capacitor electrode corresponding to a predetermined portion of the wiring layer; an interlayer insulating film formed on the gate electrode layer; and a pixel electrode layer formed on the interlayer insulating film, and including a pixel electrode connected to the drain region or the source region through a contact hole formed in the gate insulating layer and the interlayer insulating film.
摘要翻译： 根据本发明的实施例的显示装置包括：晶体硅层，形成在基板上，包括源极区，漏极区和沟道区; 布线层，包括信号线，形成为至少覆盖源极区域和漏极区域上的预定部分; 形成在所述晶体硅层和所述布线层上的栅极绝缘层; 形成在所述栅极绝缘层的上方并且包括扫描线的栅极电极层，与所述沟道区对应的栅电极以及与所述布线层的规定部分对应的电容电极; 形成在栅电极层上的层间绝缘膜; 以及形成在所述层间绝缘膜上的像素电极层，并且包括通过形成在所述栅极绝缘层和所述层间绝缘膜中的接触孔与所述漏极区域或所述源极区域连接的像素电极。
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公开(公告)号：US07100177B2
公开(公告)日：2006-08-29
申请号：US10663696
申请日：2003-09-17
申请人： Hitoshi Nagata , Yuji Morita
发明人： Hitoshi Nagata , Yuji Morita
IPC分类号： G11B17/04
CPC分类号： G11B17/0565 , G11B17/0283
摘要： A reproducing/recording apparatus including a first disk tray (11) for mounting a first disk thereon and a second disk tray (12) for mounting a second disk that is of a type different from the type of the firs disk thereon. The first disk tray (11) is adapted to be moved into and away from the apparatus through a single disk inlet/outlet port (10A) with the second disk tray (12) laid thereon. The reproducing/recording apparatus can be downsized even when it is adapted to reproduce information from and record information onto a number of disks of different types.
摘要翻译： 一种再现/记录装置，包括用于在其上安装第一盘的第一盘托盘（11）和用于安装不同于其上的第一盘类型的第二盘的第二盘托盘（12）。 第一盘托盘（11）适于通过与第二盘托盘（12）放置在其上的单个盘入口/出口端口（10A）移动和移离设备。 即使当再现信息并将信息记录到不同类型的多个盘上时，再现/记录装置也可以被缩小。
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27.发明授权Thin film transistor with tapered electrode structure and manufacturing method of the same 失效具有锥形电极结构的薄膜晶体管及其制造方法相同
公开(公告)号：US6133584A
公开(公告)日：2000-10-17
申请号：US992099
申请日：1997-12-17
IPC分类号： F21V8/00 , H01L21/28 , H01L21/306 , H01L21/336 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/49 , H01L29/786 , H01L29/00
CPC分类号： H01L29/66765 , G02B6/0006 , H01L21/28008 , H01L21/32134 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908
摘要： A thin film transistor includes a substrate, a gate electrode, an insulating film, a semiconductor film, a source electrode, a drain electrode, wherein in at least one electrode of the gate electrode, the source electrode and the drain electrode, end portion of the at least one electrode is tapered in such a manner that a thickness decreases in a direction toward end face of the at least one electrode, the at least one electrode being composed of one electrode material, and prescribed physical property of the at least one electrode being changed in a direction perpendicular to a surface of the at least one electrode, so that an etching rate of the at least one electrode is changed in the direction.
摘要翻译： 薄膜晶体管包括基板，栅电极，绝缘膜，半导体膜，源电极，漏电极，其中在栅电极的至少一个电极中，源电极和漏电极的端部 所述至少一个电极以使所述至少一个电极的端面朝向的方向减小的方式渐缩，所述至少一个电极由一个电极材料构成，并且所述至少一个电极的规定的物理性质 在垂直于至少一个电极的表面的方向上变化，使得至少一个电极的蚀刻速率在该方向上改变。
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公开(公告)号：US5996395A
公开(公告)日：1999-12-07
申请号：US984949
申请日：1997-12-04
IPC分类号： G01M13/02 , G01H13/00 , G01M17/007 , G01N3/56 , G01N19/02
摘要： A frictional dynamic characteristic measuring apparatus for measuring a pressing force and a frictional force acting between a friction material as a specimen and a slide portion which are in sliding contact, includes a sliding speed changing device for forcibly changing a sliding speed of the friction material and the slide portion, which is changing in a self-excited manner at a resonance frequency of a resonance system including the friction material and the slide portion, at the resonance frequency of the resonance system. This apparatus enables evaluation of a friction material which absorbs self-excited vibration in a torsional vibration system without the need of additional evaluation in an actual machine for use.
摘要翻译： 用于测量作为试样的摩擦材料和滑动接触的滑动部分之间的按压力和摩擦力的摩擦动力特性测量装置包括：用于强制地改变摩擦材料的滑动速度的滑动速度改变装置，以及 滑动部分以共振系统的共振频率以包含摩擦材料和滑动部分的共振系统的共振频率以自激方式变化。 该装置能够评估在扭转振动系统中吸收自激振动的摩擦材料，而不需要在实际使用的机器中进一步评估。
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公开(公告)号：US5426016A
公开(公告)日：1995-06-20
申请号：US87100
申请日：1993-07-07
IPC分类号： G03F7/038 , C08F30/00 , C08F30/04 , C08F30/10 , G03F7/039 , G03F7/26 , G03F7/42 , H01L21/027 , H01L21/30 , G03C5/00
摘要： The present invention is directed to a method of forming and removing a resist pattern, used in a semiconductor manufacture.In a first mode of the present invention, an upper resist layer containing germanium is selectively formed on a bottom resist layer and a resist pattern is formed with the upper resist layer as a mask. In a second mode of the present invention, a resist layer formed on a substrate is selectively exposed to introduce a germanium compound into the exposed portions and the above described resist layer is subjected to an anisotropic dry etching to remove the nonexposed portions of the resist layer, whereby forming a resist pattern. Accordingly, the fine pattern can be formed on the substrate in high accuracy by the use of the above described resist pattern. In addition, in the first and the second modes of the present invention, the resist pattern is removed by the use of an acid having an oxidizing power, so that the resist pattern can be easily removed from the substrate.
摘要翻译： 本发明涉及用于半导体制造中的形成和去除抗蚀剂图案的方法。 在本发明的第一模式中，在底部抗蚀剂层上选择性地形成含有锗的上抗蚀剂层，并且以上抗蚀剂层形成抗蚀剂图案作为掩模。 在本发明的第二模式中，选择性地暴露形成在基板上的抗蚀剂层，以将锗化合物引入到暴露部分中，并且对上述抗蚀剂层进行各向异性干蚀刻以除去抗蚀剂层的未涂覆部分 ，从而形成抗蚀剂图案。 因此，可以通过使用上述抗蚀剂图案以高精度在基板上形成精细图案。 此外，在本发明的第一和第二模式中，通过使用具有氧化能力的酸去除抗蚀剂图案，使得抗蚀剂图案可以容易地从基板去除。
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公开(公告)号：US5279911A
公开(公告)日：1994-01-18
申请号：US793319
申请日：1991-11-15
申请人： Kazuya Kamon , Hitoshi Nagata
发明人： Kazuya Kamon , Hitoshi Nagata
摘要： According to the inventive photomask, a light shielding pattern as well as a high reflection film are formed at one major surface side of a transparent substrate. Thus, a focal position in a resist film with respect to light directly passing through the high reflection film is separated from a focal position in the resist film with respect to light multiple-reflected by the high reflection film along the thickness direction of the resist film, whereby the depth of focus is enlarged as the result.
摘要翻译： 根据本发明的光掩模，在透明基板的一个主表面侧形成遮光图案以及高反射膜。 因此，相对于直接穿过高反射膜的光的抗蚀剂膜中的聚焦位置与抗蚀剂膜的厚度方向相对于高反射膜多次反射的光从抗蚀剂膜的焦点位置分离 结果，焦点的深度被扩大。
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