公开(公告)号：US06586335B1

公开(公告)日：2003-07-01

申请号：US09645981

申请日：2000-10-11

申请人： Kazuyuki Sakata ,  Kazunori Inoue ,  Takeshi Morita ,  Hitoshi Nagata

发明人： Kazuyuki Sakata ,  Kazunori Inoue ,  Takeshi Morita ,  Hitoshi Nagata

IPC分类号： H01L2972

CPC分类号： H01L29/66765 ,  G02B6/0006 ,  H01L21/28008 ,  H01L21/32134 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908

摘要： A thin film transistor includes: a substrate, a gate electrode, an insulating film, a semiconductor film, a source electrode, a drain electrode, wherein in at least one electrode of the gate electrode, the source electrode and the drain electrode, end portion of the at least one electrode is tapered in such a manner that a thickness decreases in a direction toward end face of the at least one electrode, the at least one electrode being composed of one electrode material, and prescribed physical property of the at least one electrode being changed in a direction perpendicular to a surface of the at least one electrode, so that an etching rate of the at least one electrode is changed in the direction.

摘要翻译： 薄膜晶体管包括：基板，栅电极，绝缘膜，半导体膜，源电极，漏电极，其中在栅电极的至少一个电极中，源电极和漏极，端部 所述至少一个电极的厚度在朝向所述至少一个电极的端面的方向上减小，所述至少一个电极由一个电极材料构成，并且所述至少一个电极的规定的物理性质 电极在垂直于至少一个电极的表面的方向上变化，使得至少一个电极的蚀刻速率在该方向上改变。

公开(公告)号：US6133584A

公开(公告)日：2000-10-17

申请号：US992099

申请日：1997-12-17

申请人： Kazuyuki Sakata ,  Kazunori Inoue ,  Takeshi Morita ,  Hitoshi Nagata

发明人： Kazuyuki Sakata ,  Kazunori Inoue ,  Takeshi Morita ,  Hitoshi Nagata

IPC分类号： F21V8/00 ,  H01L21/28 ,  H01L21/306 ,  H01L21/336 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L29/00

CPC分类号： H01L29/66765 ,  G02B6/0006 ,  H01L21/28008 ,  H01L21/32134 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908

摘要： A thin film transistor includes a substrate, a gate electrode, an insulating film, a semiconductor film, a source electrode, a drain electrode, wherein in at least one electrode of the gate electrode, the source electrode and the drain electrode, end portion of the at least one electrode is tapered in such a manner that a thickness decreases in a direction toward end face of the at least one electrode, the at least one electrode being composed of one electrode material, and prescribed physical property of the at least one electrode being changed in a direction perpendicular to a surface of the at least one electrode, so that an etching rate of the at least one electrode is changed in the direction.

摘要翻译： 薄膜晶体管包括基板，栅电极，绝缘膜，半导体膜，源电极，漏电极，其中在栅电极的至少一个电极中，源电极和漏电极的端部 所述至少一个电极以使所述至少一个电极的端面朝向的方向减小的方式渐缩，所述至少一个电极由一个电极材料构成，并且所述至少一个电极的规定的物理性质 在垂直于至少一个电极的表面的方向上变化，使得至少一个电极的蚀刻速率在该方向上改变。

公开(公告)号：US06252247B1

公开(公告)日：2001-06-26

申请号：US09168091

申请日：1998-10-08

申请人： Kazuyuki Sakata ,  Kazunori Inoue ,  Toru Takeguchi ,  Nobuhiro Nakamura ,  Masaru Yamada

发明人： Kazuyuki Sakata ,  Kazunori Inoue ,  Toru Takeguchi ,  Nobuhiro Nakamura ,  Masaru Yamada

IPC分类号： H01L2702

CPC分类号： H01L29/66765 ,  G02F2001/136295 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908

摘要： A thin film transistor (TFT) device including a first electrode including at least one of a gate, a source and a drain formed on a transparent insulating substrate, an insulating film layer covering both the first electrode and the transparent insulating substrate, and a transparent film electrode formed on the insulating film layer. The first electrode includes a first layer made of pure Al or Al alloy and a second layer, formed by an impurity selected from one of N, O, Si and C, added to the Al or Al alloy. The second layer of the first electrode is provided at an interconnection between the transparent film electrode and the first layer of the first electrode.

摘要翻译： 一种薄膜晶体管（TFT）装置，包括：第一电极，其包括形成在透明绝缘基板上的栅极，源极和漏极中的至少一个;覆盖第一电极和透明绝缘基板的绝缘膜层;以及透明 膜电极形成在绝缘膜层上。 第一电极包括由纯Al或Al合金制成的第一层和由添加到Al或Al合金中的选自N，O，Si和C中的一种的杂质形成的第二层。 第一电极的第二层设置在透明膜电极和第一电极的第一层之间的互连处。

公开(公告)号：US08546804B2

公开(公告)日：2013-10-01

申请号：US13232251

申请日：2011-09-14

申请人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

发明人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  G02F1/136

CPC分类号： H01L29/458 ,  H01L29/42384 ,  H01L29/66765

摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

摘要翻译： 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

公开(公告)号：US20120105298A1

公开(公告)日：2012-05-03

申请号：US13344274

申请日：2012-01-05

申请人： Kazunori Inoue ,  Takashi Matsuda ,  Michio Miura

发明人： Kazunori Inoue ,  Takashi Matsuda ,  Michio Miura

IPC分类号： H03H9/64 ,  H01Q1/50 ,  H03H9/72

CPC分类号： H03H9/02992 ,  H03H9/02952 ,  H03H9/6483 ,  H03H9/725

摘要： A configuration that reduces a parasitic capacitance between wires is achieved at a low cost. Disclosed is an acoustic wave filter provided with a piezoelectric substrate 1, resonators 2a and 2b that include a comb-shaped electrode formed on the piezoelectric substrate 1, a wiring portion 3 that is connected to the comb-shaped electrode, and a dielectric layer 4 formed to cover the comb-shaped electrode. The wiring portion 3 is provided with a lower layer wiring portion 3d that is disposed in the same layer as the comb-shaped electrode and an upper layer wiring portion 3e that is disposed on the lower layer wiring portion 3d. The upper layer wiring portion 3e includes a region that has a wider electrode width than the electrode width of the lower layer wiring portion 3d.

摘要翻译： 以低成本实现降低电线之间的寄生电容的结构。 公开了一种设置有压电基板1的谐波滤波器，包括形成在压电基板1上的梳状电极的谐振器2a和2b，连接到梳状电极的布线部分3和介电层4 形成为覆盖梳状电极。 布线部分3设置有与梳状电极相同的层中的下层布线部分3d和布置在下层布线部分3d上的上层布线部分3e。 上层布线部分3e包括具有比下层布线部分3d的电极宽度更宽的电极宽度的区域。

公开(公告)号：US07841064B2

公开(公告)日：2010-11-30

申请号：US11987173

申请日：2007-11-28

申请人： Shunichi Aikawa ,  Takumi Kooriike ,  Jyouji Kimura ,  Keiji Tsuda ,  Masayuki Kitajima ,  Kazunori Inoue ,  Takashi Matsuda

发明人： Shunichi Aikawa ,  Takumi Kooriike ,  Jyouji Kimura ,  Keiji Tsuda ,  Masayuki Kitajima ,  Kazunori Inoue ,  Takashi Matsuda

IPC分类号： H04R31/00

CPC分类号： H03H3/08 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/4908

摘要： A method of manufacturing an acoustic wave device includes forming a first sealing portion on a substrate having an acoustic wave element thereon so that a functional region, in which an acoustic wave oscillates, of the acoustic wave element acts as a first non-covered portion and a cutting region for individuating acts as a second non-covered portion, forming a second sealing portion on the first sealing portion so as to cover the first non-covered portion and the second non-covered portion, and cutting off the substrate and the second sealing portion so that the second non-covered portion is divided.

摘要翻译： 一种制造声波器件的方法包括在其上具有声波元件的衬底上形成第一密封部分，使得声波元件的声波振荡的功能区域用作第一非覆盖部分， 用于个体化作为第二非覆盖部分的切割区域，在所述第一密封部分上形成第二密封部分以覆盖所述第一非覆盖部分和所述第二未覆盖部分，并且切断所述基板，并且所述第二密封部分 密封部分，使得第二未覆盖部分被分割。

公开(公告)号：US20100148887A1

公开(公告)日：2010-06-17

申请号：US12711871

申请日：2010-02-24

申请人： Takashi MATSUDA ,  Kazunori Inoue ,  Michio Miura

发明人： Takashi MATSUDA ,  Kazunori Inoue ,  Michio Miura

IPC分类号： H03H9/205

CPC分类号： H03H9/6476 ,  H03H9/02992 ,  H03H9/6483

摘要： An elastic wave device includes resonators having a piezoelectric substrate, a resonation unit formed on the piezoelectric substrate, and reflectors formed on respective sides of the resonation unit on the piezoelectric substrate, and bumps formed on the piezoelectric substrate. The resonators are configured such that two or more split resonators are connected in parallel, and a bump is formed in a region sandwiched between reflectors of the split resonators.

摘要翻译： 弹性波装置包括具有压电基板的谐振器，形成在压电基板上的谐振单元和形成在压电基板上的谐振单元的各侧上的反射器，以及形成在压电基板上的凸块。 谐振器被配置为使得两个或更多个分离谐振器并联连接，并且在夹在分离谐振器的反射器之间的区域中形成凸块。

公开(公告)号：US07721411B2

公开(公告)日：2010-05-25

申请号：US11987175

申请日：2007-11-28

申请人： Shunichi Aikawa ,  Jyouji Kimura ,  Keiji Tsuda ,  Kazunori Inoue ,  Takashi Matsuda

发明人： Shunichi Aikawa ,  Jyouji Kimura ,  Keiji Tsuda ,  Kazunori Inoue ,  Takashi Matsuda

IPC分类号： H04R31/00

CPC分类号： H03H3/08 ,  H03H9/1092 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49798

摘要： A method of manufacturing an acoustic wave device includes: forming a conductive pattern on a wafer made of a piezoelectric substrate having an acoustic wave element, the conductive pattern including a first conductive pattern being continuously formed on a cutting region for individuating the wafer, a second conductive pattern being formed on an electrode region where a plated electrode is to be formed and being connected to the acoustic wave element and a third conductive pattern connecting the first conductive pattern and the second pattern; forming an insulating layer on the wafer so as to have an opening on the second conductive pattern; forming the plated electrode on the second conductive pattern by providing an electrical current to the second conductive pattern via the first conductive pattern and the third conductive pattern; and cutting off and individuating the wafer along the cutting region.

摘要翻译： 一种制造声波器件的方法包括：在由具有声波元件的压电基片制成的晶片上形成导电图案，所述导电图案包括连续形成在用于个别晶片的切割区域上的第一导电图案，第二 导电图案形成在要形成镀覆电极的电极区域上，并连接到声波元件;连接第一导电图案和第二图案的第三导电图案; 在所述晶片上形成绝缘层，以在所述第二导电图案上具有开口; 通过经由第一导电图案和第三导电图案向第二导电图案提供电流，在第二导电图案上形成电镀电极; 并沿着切割区域切割和分离晶片。

公开(公告)号：US20100078816A1

公开(公告)日：2010-04-01

申请号：US12523550

申请日：2008-02-04

申请人： Takumi Nakahata ,  Kazunori Inoue ,  Koji Oda ,  Naoki Nakagawa ,  Nobuaki Ishiga

发明人： Takumi Nakahata ,  Kazunori Inoue ,  Koji Oda ,  Naoki Nakagawa ,  Nobuaki Ishiga

IPC分类号： H01L23/532 ,  H01L21/283

CPC分类号： G02F1/13439 ,  G02F1/133555 ,  G02F1/136227 ,  G02F2001/136295 ,  G02F2201/40 ,  G02F2202/06 ,  H01L27/124 ,  H01L29/458

摘要： A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.

摘要翻译： 显示装置包括形成在基板上的金属导电层，形成在基板上并与金属导电层接合的透明电极膜和隔离金属导电层和透明导电膜的层间绝缘膜。 金属导电层具有由铝或铝合金制成的较低铝层，由含有杂质的铝或铝合金制成的中间杂质含有层，形成在下铝层的大致整个上表面上，铝层由铝制成 或铝合金，并形成在中间杂质含有层上。 在层间绝缘膜和上部铝层中，接触孔穿过其中并局部暴露中间杂质含有层，并且透明电极膜与从接触孔露出的中间杂质含有层中的金属导电层接合。

公开(公告)号：US20080174207A1

公开(公告)日：2008-07-24

申请号：US12018460

申请日：2008-01-23

申请人： Keiji Tsuda ,  Jyouji Kimura ,  Shunichi Aikawa ,  Kazunori Inoue ,  Takashi Matsuda

发明人： Keiji Tsuda ,  Jyouji Kimura ,  Shunichi Aikawa ,  Kazunori Inoue ,  Takashi Matsuda

IPC分类号： H01L41/08

CPC分类号： H03H3/08 ,  H01L2224/11

摘要： An acoustic wave device includes an acoustic wave element formed on a substrate, a first seal portion provided on the substrate so as to form a cavity above the acoustic wave element, and a second seal portion provided on the first seal portion, the first seal portion having a step so that the first seal portion has a width on a first side and another width on a second side arranged so that the first side is closer than the second side to the substrate, and the width on the first side is greater than the another width on the second side.

摘要翻译： 声波装置包括形成在基板上的声波元件，设置在基板上以在声波元件上方形成空腔的第一密封部分和设置在第一密封部分上的第二密封部分，第一密封部分 具有使所述第一密封部在第一侧具有宽度，在所述第二侧具有第二侧的另一宽度，使得所述第一侧比所述基板的所述第二侧更靠近，所述第一侧的宽度大于所述第一侧的宽度 第二侧的另一个宽度。